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    • 7. 发明申请
    • Circuits for Improving Linearity of Metal Oxide Semiconductor (MOS) Transistors
    • 用于改善金属氧化物半导体(MOS)晶体管的线性度的电路
    • US20140084982A1
    • 2014-03-27
    • US13627396
    • 2012-09-26
    • TEXAS INSTRUMENTS INCORPORATED
    • Shagun DusadVisvesvaraya Pentakota
    • H03L5/00
    • H03K17/16H03F1/32H03F3/45179H03F2203/45394H03F2203/45684H03F2203/45702H03K17/165
    • Various embodiments of circuits configured to improve second order harmonic distortion of Metal Oxide Semiconductor (MOS) transistors operating in linear region are provided. In one embodiment, a circuit includes an averaging circuit configured to average signals at a drain and a source of a MOS transistor and provide the averaged signal to a gate of the MOS transistor, and one or more current sources coupled with the gate; the circuit is configured to vary voltage at the gate so as to vary a resistance of the MOS transistor. The averaging circuit comprises a first MOS circuit coupled between the drain and the gate, a first capacitor coupled in parallel to the first MOS circuit between the drain and the gate, a second MOS circuit coupled between the source and the gate, and a second capacitor coupled in parallel to the second MOS circuit between the source and the gate.
    • 提供了构造成改善以线性区域工作的金属氧化物半导体(MOS)晶体管的二阶谐波失真的电路的各种实施例。 在一个实施例中,电路包括平均电路,其被配置为平均MOS晶体管的漏极和源极处的信号,并将平均信号提供给MOS晶体管的栅极以及与栅极耦合的一个或多个电流源; 电路被配置为改变栅极处的电压,以便改变MOS晶体管的电阻。 平均电路包括耦合在漏极和栅极之间的第一MOS电路,与漏极和栅极之间的第一MOS电路并联耦合的第一电容器,耦合在源极和栅极之间的第二MOS电路和第二电容器 在源极和栅极之间并联耦合到第二MOS电路。