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1. 发明授权

US4810482A Process for producing silanes 失效
标题翻译：硅烷生产工艺
公开(公告)号：US4810482A
公开(公告)日：1989-03-07
申请号：US644722
申请日：1984-08-16
申请人： Tetsuya Iwao , Yoshiaki Toyoda , Kazuo Wakimura , Nobuhiro Kitano , Masao Tanaka
发明人： Tetsuya Iwao , Yoshiaki Toyoda , Kazuo Wakimura , Nobuhiro Kitano , Masao Tanaka
IPC分类号： C01B33/04
CPC分类号： C01B33/04 , C01B33/043
摘要： There is disclosed a process for producing silanes by reducing polyhalosilane with a mixture of alkyl aluminum hydride and trialkyl aluminum, in which a treatment for reducing the content of trialkyl aluminum in the mixture is lowered to 10 mol. % or less of alkyl aluminum hydride prior to the reduction reaction.As to methods for reducing the content of trialkyl aluminum in the mixture, there are provided, for example, distillation, recrystallization, separation by complex formation, pyrolysis of trialkyl aluminum and decomposition by hydrogenation of trialkyl aluminum.
摘要翻译： PCT No.PCT / JP83 / 00449 Sec。 371日期1984年8月16日 102（e）日期1984年8月16日PCT提交1983年12月21日PCT公布。出版物WO84 / 02517 日本公报1984年7月5日。公开了一种通过用氢化烷基铝和三烷基铝的混合物还原多卤代硅烷来制备硅烷的方法，其中用于将混合物中三烷基铝含量降低至10mol的处理。在还原反应之前为氢或更少的氢化铝。关于降低混合物中三烷基铝的含量的方法，例如提供蒸馏，重结晶，通过络合物形成分离，三烷基铝的热解和三烷基铝的氢化分解。

2. 发明授权

US4555583A Preparation process for glyoxal 失效
标题翻译：乙二醛的制备方法
公开(公告)号：US4555583A
公开(公告)日：1985-11-26
申请号：US597067
申请日：1984-03-28
申请人： Yoshiaki Toyoda , Kazuo Wakimura , Tadaharu Hase , Nobumasa Arashiba
发明人： Yoshiaki Toyoda , Kazuo Wakimura , Tadaharu Hase , Nobumasa Arashiba
IPC分类号： C07C45/38 , C07C45/29
CPC分类号： C07C45/38
摘要： Glyoxal may be produced with a high yield by bringing a gas, which has been formed by diluting ethylene glycol and molecular oxygen with an inert gas, into contact at a high temperature with a silver catalyst in the simultaneous presence of phosphorus or a phosphorus compound so as to effect the gas phase oxidation of the ethylene glycol.In the above process, it is possible to suppress the formation of glycolaldehyde, a reaction intermediate, and also to enhance the stability of the reaction by using silver powder having particle sizes of 1.times.10.sup.-3 mm or smaller as at least part of the silver catalyst.
摘要翻译： PCT No.PCT / JP83 / 00283 Sec。 371日期1984年3月28日 102（e）日期1984年3月28日PCT提交1983年8月30日PCT公布。公开号WO84 / 00955 1984年3月15日.Glyoxal可以通过将通过用惰性气体稀释乙二醇和分子氧而形成的气体在同时存在的情况下在高温下与银催化剂接触而产生高产率的磷或磷化合物，以实现乙二醇的气相氧化。在上述方法中，可以通过使用粒径为1×10 -3 mm以下的银粉末作为银催化剂的至少一部分来抑制乙二醇的形成，反应中间体，以及提高反应的稳定性。

3. 发明授权

US09142463B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09142463B2
公开(公告)日：2015-09-22
申请号：US13516102
申请日：2011-01-28
申请人： Yuichi Harada , Tatsuya Naito , Yoshiaki Toyoda
发明人： Yuichi Harada , Tatsuya Naito , Yoshiaki Toyoda
IPC分类号： H01L23/62 , H01L21/84 , H01L27/02 , H01L27/06 , H01L27/12 , H01L29/739 , H01L29/78 , H01L29/861
CPC分类号： H01L21/84 , H01L27/0255 , H01L27/0259 , H01L27/0629 , H01L27/0635 , H01L27/1203 , H01L29/7395 , H01L29/78 , H01L29/861 , H01L2224/48463 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： By connecting a protection diode (71) wherein p-anode layers (21) and n-cathode layers (22) are alternately formed in a polysilicon layer, and p-n junctions (74) that are in a reverse blocking state when there is a forward bias are alternately short circuited with a metal film (53), to a power semiconductor element (IGBT (72)), it is possible to achieve a balance between a high breakdown capability and a smaller chip area, a rise of breakdown voltage is suppressed even when a clamping voltage is repeatedly applied, and furthermore, it is possible to prevent destruction caused by a negative surge voltage input into a gate terminal (G).
摘要翻译：通过连接其中在多晶硅层中交替形成p阳极层（21）和n-阴极层（22）的保护二极管（71）和当存在向前的方向时处于反向阻塞状态的pn结（74）偏置与金属膜（53）交替地短路到功率半导体元件（IGBT（72）），可以实现高击穿能力和较小芯片面积之间的平衡，抑制击穿电压的上升即使重复施加钳位电压，此外，可以防止由输入到栅极端子（G）的负浪涌电压引起的破坏。

4. 发明授权

US07777518B2 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US07777518B2
公开(公告)日：2010-08-17
申请号：US12471720
申请日：2009-05-26
申请人： Yoshiaki Toyoda , Kenichi Ishii , Morio Iwamizu
发明人： Yoshiaki Toyoda , Kenichi Ishii , Morio Iwamizu
IPC分类号： H03K17/16 , H03K19/003
CPC分类号： H03K17/0828 , H03K17/06 , H03K2017/066
摘要： A buffer circuit is provided between a gate terminal of a pull-down transistor and a threshold circuit receiving a gate signal as an input signal. A voltage applied to an output terminal of a power semiconductor element from an external battery power supply is supplied to the buffer circuit through a resistive element. The buffer circuit converts the level of an on-signal output from the threshold circuit into a voltage higher than the threshold of the pull-down transistor, so that the pull-down transistor operates surely to turn off the power semiconductor element even when the level of the gate signal is low. Thus, there is provided a semiconductor integrated circuit device having a power semiconductor element which can be turned off by sure operation of a pull-down semiconductor element.
摘要翻译：在下拉晶体管的栅极端子和接收栅极信号的阈值电路之间设置缓冲电路作为输入信号。从外部电池电源向功率半导体元件的输出端施加的电压通过电阻元件供给缓冲电路。缓冲电路将来自阈值电路的导通信号输出的电平转换成高于下拉晶体管的阈值的电压，使得下拉晶体管可靠地工作以关闭功率半导体元件，即使当电平的门信号为低电平。因此，提供了具有功率半导体元件的半导体集成电路器件，该功率半导体元件可以通过下拉半导体元件的可靠操作而被关断。

5. 发明申请

US20140008718A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20140008718A1
公开(公告)日：2014-01-09
申请号：US13980046
申请日：2012-03-15
申请人： Yoshiaki Toyoda
发明人： Yoshiaki Toyoda
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L21/823412 , H01L21/823418 , H01L21/823456 , H01L21/823487 , H01L27/088 , H01L29/0615 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/4236 , H01L29/66666 , H01L29/7397 , H01L29/7803 , H01L29/7811 , H01L29/7827
摘要： A semiconductor device includes a vertical trench gate element portion and a lateral n-channel element portion for control which includes a well diffusion region, and a junction edge termination region which surrounds the vertical trench gate element portion and the lateral n-channel element portion for control. The junction edge termination region includes an oxide layer, a sustain region in contact with a trench provided at the end, and a diffusion region in contact with the sustain region. The diffusion region is deeper than the base region and has low concentration. The sustain region is shallower than the diffusion region and has high concentration. The well diffusion region is deeper than the base region and the sustain region and has low concentration. The breakdown voltage of the junction edge termination region and the well diffusion region is higher than that of the vertical trench gate element portion.
摘要翻译：半导体器件包括垂直沟槽栅极元件部分和用于控制的横向n沟道元件部分，其包括阱扩散区域和围绕垂直沟槽栅极元件部分和横向n沟道元件部分的连接边缘终止区域，用于控制。接合边缘终止区域包括氧化物层，与设置在端部处的沟槽接触的维持区域和与维持区域接触的扩散区域。扩散区域比基极区域深，浓度低。维持区比扩散区浅，浓度高。阱扩散区域比基极区域和维持区域深，并且浓度低。接合边缘终端区域和阱扩散区域的击穿电压高于垂直沟槽栅极元件部分的击穿电压。

6. 发明授权

US09209296B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09209296B2
公开(公告)日：2015-12-08
申请号：US13980046
申请日：2012-03-15
申请人： Yoshiaki Toyoda
发明人： Yoshiaki Toyoda
IPC分类号： H01L29/78 , H01L21/8234 , H01L27/088 , H01L29/06 , H01L29/10 , H01L29/739 , H01L29/40
CPC分类号： H01L29/7813 , H01L21/823412 , H01L21/823418 , H01L21/823456 , H01L21/823487 , H01L27/088 , H01L29/0615 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/4236 , H01L29/66666 , H01L29/7397 , H01L29/7803 , H01L29/7811 , H01L29/7827
摘要： A semiconductor device includes a vertical trench gate element portion and a lateral n-channel element portion for control which includes a well diffusion region, and a junction edge termination region which surrounds the vertical trench gate element portion and the lateral n-channel element portion for control. The junction edge termination region includes an oxide layer, a sustain region in contact with a trench provided at the end, and a diffusion region in contact with the sustain region. The diffusion region is deeper than the base region and has low concentration. The sustain region is shallower than the diffusion region and has high concentration. The well diffusion region is deeper than the base region and the sustain region and has low concentration. The breakdown voltage of the junction edge termination region and the well diffusion region is higher than that of the vertical trench gate element portion.
摘要翻译：半导体器件包括垂直沟槽栅极元件部分和用于控制的横向n沟道元件部分，其包括阱扩散区域和围绕垂直沟槽栅极元件部分和横向n沟道元件部分的连接边缘终止区域，用于控制。接合边缘终止区域包括氧化物层，与设置在端部处的沟槽接触的维持区域和与维持区域接触的扩散区域。扩散区域比基极区域深，浓度低。维持区比扩散区浅，浓度高。阱扩散区域比基极区域和维持区域深，并且浓度低。接合边缘终端区域和阱扩散区域的击穿电压高于垂直沟槽栅极元件部分的击穿电压。

7. 发明申请

US20120299108A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120299108A1
公开(公告)日：2012-11-29
申请号：US13516102
申请日：2011-01-28
申请人： Yuichi Harada , Tatsuya Naito , Yoshiaki Toyoda
发明人： Yuichi Harada , Tatsuya Naito , Yoshiaki Toyoda
IPC分类号： H01L27/088
CPC分类号： H01L21/84 , H01L27/0255 , H01L27/0259 , H01L27/0629 , H01L27/0635 , H01L27/1203 , H01L29/7395 , H01L29/78 , H01L29/861 , H01L2224/48463 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： By connecting a protection diode (71) wherein p-anode layers (21) and n-cathode layers (22) are alternately formed in a polysilicon layer, and p-n junctions (74) that are in a reverse blocking state when there is a forward bias are alternately short circuited with a metal film (53), to a power semiconductor element (IGBT (72)), it is possible to achieve a balance between a high breakdown capability and a smaller chip area, a rise of breakdown voltage is suppressed even when a clamping voltage is repeatedly applied, and furthermore, it is possible to prevent destruction caused by a negative surge voltage input into a gate terminal (G).
摘要翻译：通过连接其中在多晶硅层中交替形成p阳极层（21）和n-阴极层（22）的保护二极管（71）和当存在向前的方向时处于反向阻塞状态的pn结（74）偏置与金属膜（53）交替地短路到功率半导体元件（IGBT（72）），可以实现高击穿能力和较小芯片面积之间的平衡，抑制击穿电压的上升即使重复施加钳位电压，此外，可以防止由输入到栅极端子（G）的负浪涌电压引起的破坏。

8. 发明授权

US4425255A Regeneration method of catalysts 失效
标题翻译：催化剂再生方法
公开(公告)号：US4425255A
公开(公告)日：1984-01-10
申请号：US380738
申请日：1982-05-13
申请人： Yoshiaki Toyoda , Yoshihiro Ikeda , Nobumasa Arashiba
发明人： Yoshiaki Toyoda , Yoshihiro Ikeda , Nobumasa Arashiba
IPC分类号： B01J38/12 , B01J23/92 , B01J27/28 , C07B61/00 , C07C67/00 , C07C253/00 , C07C253/26 , C07C255/08 , B01J20/02 , B01J20/16
CPC分类号： B01J23/92
摘要： A method for regenerating a catalyst containing molybdenum as an active component comprising subjecting a catalyst, which has been deactivated through the use for a reaction, with or without a molybdenum source added thereto, to a heat treatment in a reducing gas atmosphere under specific temperature conditions and then subjecting same to a further heat treatment in a gaseous atmosphere containing molecular oxygen and at specific temperature conditions.
摘要翻译： PCT No.PCT / JP81 / 00238 Sec。 371日期1982年5月13日 102（e）日期1982年5月13日PCT提交1981年9月18日PCT公布。第WO82 / 00961号公报日期：1982年4月1日。一种用于再生含有钼作为活性成分的催化剂的方法，包括使已加入或不添加钼源的催化剂在已加入或不加入钼的催化剂中进行热处理在特定温度条件下还原气氛，然后在含有分子氧气体和特定温度条件下进行进一步的热处理。

9. 发明授权

US09013161B2 Load drive circuit 有权
标题翻译：负载驱动电路
公开(公告)号：US09013161B2
公开(公告)日：2015-04-21
申请号：US14238759
申请日：2012-08-21
申请人： Minoru Nishio , Takatoshi Oe , Yoshiaki Toyoda
发明人： Minoru Nishio , Takatoshi Oe , Yoshiaki Toyoda
IPC分类号： H02M1/32 , H03K17/18 , G01R31/40 , H02H3/24
CPC分类号： G01R31/40 , H02H3/243 , H02M1/32 , H03K17/18 , H03K2217/0063
摘要： An open load and a supply fault are differentiated between and detected with a simple configuration. A switching element (Q1) connected between the positive electrode of a direct current power supply and an output terminal (9) is caused to carry out a switching operation, thereby driving a load (7) connected to the output terminal (9). A load trouble detection circuit (21) that detects an opening of the load (7) or a supply fault when the voltage of the output terminal (9) is higher than the value of a first threshold voltage, and a supply fault detection circuit (25) that detects a failure of supply to the power supply of the load (7) when the voltage of the output terminal (9) is higher than the value of a second threshold value voltage subtracted from the power supply voltage when the switching element (Q1) is in an off-state, are included.
摘要翻译：开放负载和供电故障在简单配置之间进行区分并检测。连接在直流电源的正极和输出端子（9）之间的开关元件（Q1）进行开关动作，驱动与输出端子（9）连接的负载（7）。以及负载故障检测电路（21），其检测所述负载（7）的开路或当所述输出端子（9）的电压高于第一阈值电压时的电源故障，以及电源故障检测电路 25），当所述开关元件（9）的输出端子（9）的电压高于从所述电源电压减去的第二阈值电压的值时，检测到对所述负载（7）的电源的供给的故障， Q1）处于关闭状态，包括在内。

10. 发明申请

US20140253078A1 LOAD DRIVE CIRCUIT 有权
标题翻译：负载驱动电路
公开(公告)号：US20140253078A1
公开(公告)日：2014-09-11
申请号：US14238759
申请日：2012-08-21
申请人： Minoru Nishio , Takatoshi Oe , Yoshiaki Toyoda
发明人： Minoru Nishio , Takatoshi Oe , Yoshiaki Toyoda
IPC分类号： G01R31/40 , H02M1/32
CPC分类号： G01R31/40 , H02H3/243 , H02M1/32 , H03K17/18 , H03K2217/0063
摘要： An open load and a supply fault are differentiated between and detected with a simple configuration. A switching element (Q1) connected between the positive electrode of a direct current power supply and an output terminal (9) is caused to carry out a switching operation, thereby driving a load (7) connected to the output terminal (9). A load trouble detection circuit (21) that detects an opening of the load (7) or a supply fault when the voltage of the output terminal (9) is higher than the value of a first threshold voltage, and a supply fault detection circuit (25) that detects a failure of supply to the power supply of the load (7) when the voltage of the output terminal (9) is higher than the value of a second threshold value voltage subtracted from the power supply voltage when the switching element (Q1) is in an off-state, are included.
摘要翻译：开放负载和供电故障在简单配置之间进行区分并检测。连接在直流电源的正极和输出端子（9）之间的开关元件（Q1）进行开关动作，驱动与输出端子（9）连接的负载（7）。以及负载故障检测电路（21），其检测所述负载（7）的开路或当所述输出端子（9）的电压高于第一阈值电压时的电源故障，以及电源故障检测电路 25），当所述开关元件（9）的输出端子（9）的电压高于从所述电源电压减去的第二阈值电压的值时，检测到对所述负载（7）的电源的供给的故障， Q1）处于关闭状态，包括在内。

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