专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08317896B2 Method of recycling useful metal 有权
标题翻译：回收有用金属的方法
公开(公告)号：US08317896B2
公开(公告)日：2012-11-27
申请号：US12812154
申请日：2008-12-25
申请人： Tetsuya Homma , Tomoyuki Ubusawa , Tomoyuki Furuyama , Akihiro Morikaku , Kumpei Tanaka
发明人： Tetsuya Homma , Tomoyuki Ubusawa , Tomoyuki Furuyama , Akihiro Morikaku , Kumpei Tanaka
IPC分类号： C22B7/00 , B22F9/04
CPC分类号： C22B7/007 , C22B3/10 , C22B3/22 , C22B58/00 , C25C1/00 , C25C5/04 , G02F1/1343 , G02F2203/68 , H01J9/52 , Y02P10/234 , Y02P10/236 , Y02W30/828
摘要： A method of recycling useful metals is provided. The method enables useful metals including indium, zinc, yttrium, europium, lanthanum, terbium, gadolinium, antimony, lead, copper, tin, and silver to be recovered from wastes, such as wasted flat panel displays, and recycled economically with small energy consumption. The method of recycling useful metals includes: a step in which wastes comprising various flat panel displays, e.g., liquid-crystal display panels, are crushed/powdered; a step in which the resultant particles are dissolved in an aqueous hydrofluoric acid solution; and a step in which various metal oxides and various metal fluorides which remain undissolved are filtered off and the aqueous hydrofluoric acid solution containing various metal ions is electrolyzed to deposit and recover metals for transparent-electrode oxides, such as indium and zinc, and other useful metals.
摘要翻译：提供了回收有用金属的方法。该方法能够从诸如浪费的平板显示器等废弃物中回收有用的金属，包括铟，锌，钇，铕，镧，铽，钆，锑，铋，钆，锑，铅，铜，锡和银，。回收有用金属的方法包括：将包括各种平板显示器（例如液晶显示面板）的废物粉碎/粉碎的步骤; 将所得颗粒溶解在氢氟酸水溶液中的步骤; 将各种金属氧化物和保持未溶解的各种金属氟化物过滤并将含有各种金属离子的氢氟酸水溶液电解沉积并回收诸如铟和锌的透明电极氧化物的金属和其它有用的步骤金属。

2. 发明申请

US20110017020A1 METHOD OF RECYCLING USEFUL METAL 有权
标题翻译：回收有用金属的方法
公开(公告)号：US20110017020A1
公开(公告)日：2011-01-27
申请号：US12812154
申请日：2008-12-25
申请人： Tetsuya Homma , Tomoyuki Ubusawa , Tomoyuki Furuyama , Akihiro Morikaku , Kumpei Tanaka
发明人： Tetsuya Homma , Tomoyuki Ubusawa , Tomoyuki Furuyama , Akihiro Morikaku , Kumpei Tanaka
IPC分类号： C22B1/00
CPC分类号： C22B7/007 , C22B3/10 , C22B3/22 , C22B58/00 , C25C1/00 , C25C5/04 , G02F1/1343 , G02F2203/68 , H01J9/52 , Y02P10/234 , Y02P10/236 , Y02W30/828
摘要： A method of recycling useful metals is provided. The method enables useful metals including indium, zinc, yttrium, europium, lanthanum, terbium, gadolinium, antimony, lead, copper, tin, and silver to be recovered from wastes, such as wasted flat panel displays, and recycled economically with small energy consumption. The method of recycling useful metals includes: a step in which wastes comprising various flat panel displays, e.g., liquid-crystal display panels, are crushed/powdered; a step in which the resultant particles are dissolved in an aqueous hydrofluoric acid solution; and a step in which various metal oxides and various metal fluorides which remain undissolved are filtered off and the aqueous hydrofluoric acid solution containing various metal ions is electrolyzed to deposit and recover metals for transparent-electrode oxides, such as indium and zinc, and other useful metals.
摘要翻译：提供了回收有用金属的方法。该方法能够从诸如浪费的平板显示器等废弃物中回收有用的金属，包括铟，锌，钇，铕，镧，铽，钆，锑，铋，钆，锑，铅，铜，锡和银，。回收有用金属的方法包括：将包括各种平板显示器（例如液晶显示面板）的废物粉碎/粉碎的步骤; 将所得颗粒溶解在氢氟酸水溶液中的步骤; 将各种金属氧化物和保持未溶解的各种金属氟化物过滤并将含有各种金属离子的氢氟酸水溶液电解沉积并回收诸如铟和锌的透明电极氧化物的金属和其它有用的步骤金属。

3. 发明授权

US5468682A Method of manufacturing semiconductor device using the abrasive 失效
标题翻译：使用研磨剂制造半导体器件的方法
公开(公告)号：US5468682A
公开(公告)日：1995-11-21
申请号：US355008
申请日：1994-12-13
申请人： Tetsuya Homma
发明人： Tetsuya Homma
IPC分类号： C09K3/14 , C01B33/18 , H01L21/304 , H01L21/3105 , H01L21/768 , H01L21/463
CPC分类号： H01L21/31053
摘要： Disclosed herein is abrasives consisting of fine particles of fluorinated silicon oxide which do not contain alkali metal and methods of thier manufacture, and high yield and high reliability methods of manufacturing semiconductor devices by the use of these abrasives. The abrasive comprises a solution in which fine particles of fluorinated silicon oxide are dispersed is formed by addition of boric acid to an aqueous solution of hydrosilicofluoric acid or addition of pure water to an alcohol solution of alkoxyfluorosilane. By the use of these abrasives, a layer insulating film for multi-layer wiring can be flattened.
摘要翻译：本文公开了由不含碱金属的氟化氧化硅微粒和其制造方法组成的研磨剂，以及通过使用这些研磨剂制造半导体器件的高产率和高可靠性方法。研磨剂包括通过将硼酸加入到氢氟酸的水溶液中或者将纯水加入到烷氧基氟硅烷的醇溶液中而形成分散有氟化氧化硅微粒的溶液。通过使用这些研磨剂，可以使用于多层布线的层绝缘膜变平。

4. 发明授权

US5288518A Chemical vapor deposition method for forming fluorine containing silicon oxide film 失效
标题翻译：用于形成含氟氧化硅膜的化学气相沉积方法
公开(公告)号：US5288518A
公开(公告)日：1994-02-22
申请号：US894584
申请日：1992-06-05
申请人： Tetsuya Homma
发明人： Tetsuya Homma
IPC分类号： H01L21/316 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/50
CPC分类号： C23C16/45514 , C23C16/401 , C23C16/45561 , C23C16/45595
摘要： A chemical vapor deposition method for forming a fluorine-containing silicon oxide film comprises introducing a gaseous mixture of alkoxysilane or its polymers as a source gas with fluoroalkoxysilane added thereto into a reaction chamber and performing decomposition of the gaseous mixture to deposit the fluorine-containing silicon oxide film onto a substrate. During the formation of the fluorine-containing silicon oxide film, at least one of compounds containing phosphorus or boron such as organic phosphorus compounds and organic boron compounds may be evaporated and introduced into said gaseous mixture, thereby adding at least one of phosphorus and boron to said fluorine-containing silicon oxide film. The fluorine-containing oxide film may be formed by effecting the decomposition of the gaseous mixture in the presence of ozone gas, or under ultraviolet radiation, or gas plasma.
摘要翻译：用于形成含氟氧化硅膜的化学气相沉积方法包括将作为源气体的烷氧基硅烷或其聚合物的气体混合物与添加了氟烷氧基硅烷的反应室引入反应室，并进行气态混合物的分解以沉积含氟硅氧化膜到基板上。在形成含氟氧化硅膜期间，可以将至少一种含有磷或硼的化合物如有机磷化合物和有机硼化合物蒸发并引入所述气态混合物中，从而将至少一种磷和硼添加到所述含氟氧化硅膜。含氟氧化物膜可以通过在臭氧气体的存在下或在紫外线下或气体等离子体下进行气体混合物的分解来形成。

5. 发明授权

US5521424A Semiconductor device having a silicon oxide film containing fluorine atoms 失效
标题翻译：具有含有氟原子的氧化硅膜的半导体装置
公开(公告)号：US5521424A
公开(公告)日：1996-05-28
申请号：US361536
申请日：1994-12-22
申请人： Kazuyoshi Ueno , Tetsuya Homma
发明人： Kazuyoshi Ueno , Tetsuya Homma
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/316 , H01L21/336 , H01L21/768 , H01L23/522 , H01L23/532 , H01L29/78 , H01L23/58
CPC分类号： H01L21/02131 , H01L21/02164 , H01L21/022 , H01L21/02211 , H01L21/02271 , H01L21/31629 , H01L23/5329 , H01L2924/0002
摘要： The semiconductor device has a multilayer structure wherein a substantially pure silicon dioxide film containing substantially no fluorine atom and a silicon dioxide film containing fluorine atoms are sequentially laminated on a substrate. Etching rate of a silicon dioxide film depends on a fluorine concentration in the film, so that a suitable etch selectivity of the silicon dioxide film containing fluorine atoms from the substantially pure silicon dioxide film can be obtained to form an oxide trench used for a trench interconnection and a via-hole used for a via-plug. The oxide film containing fluorine atoms has as good a quality as the silicon dioxide film not containing impurities has, thereby obtaining a superior characteristic of the semiconductor device. Addition of fluorine atoms reduces a specific permittivity to thereby obtain a higher speed.
摘要翻译：半导体器件具有多层结构，其中基本上不含氟原子的基本上纯的二氧化硅膜和含有氟原子的二氧化硅膜依次层压在基板上。二氧化硅膜的蚀刻速率取决于膜中的氟浓度，从而可以获得从基本上纯的二氧化硅膜中含有氟原子的二氧化硅膜的合适蚀刻选择性，以形成用于沟槽互连的氧化物沟槽以及用于通孔的通孔。含有氟原子的氧化物膜的质量与不含杂质的二氧化硅膜具有良好的质量，从而获得了优异的半导体器件的特性。氟原子的添加降低了比介电常数，从而获得更高的速度。

6. 发明授权

US5444023A Method of fabricating a semiconductor device having a multilayer wiring structure and using a fluorine compound-containing gas 失效
标题翻译：制造具有多层布线结构并使用含氟化合物的气体的半导体器件的方法
公开(公告)号：US5444023A
公开(公告)日：1995-08-22
申请号：US179718
申请日：1994-01-11
申请人： Tetsuya Homma
发明人： Tetsuya Homma
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/316 , H01L21/318 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76829 , H01L21/76826
摘要： A spin coated insulating film is coated selectively between wirings by treating the surface of a wiring layer with a fluorine compound gas plasma. The spin on glass film is made compact by exposing it to fluoroalkoxysilane vapor to accelerate condensation and polymerization of the spin coated materials. A silicon oxide film is formed by plasma excited CVD to form a flat interlayer insulating film. A fine mutilayer wiring structure can be readily formed by employing the above mentioned planarizing method of the interlayer insulating film.
摘要翻译：通过用氟化合物气体等离子体处理布线层的表面，在布线之间选择性地涂布旋涂绝缘膜。通过将其旋涂在氟代烷氧基硅烷蒸气上以加速旋涂层的冷凝和聚合，从而使玻璃膜上的旋涂变得紧凑。通过等离子体激发CVD形成氧化硅膜以形成平坦的层间绝缘膜。通过采用上述层间绝缘膜的平面化方法可以容易地形成精细的三层布线结构。

7. 发明授权

US5215787A Method of forming silicon oxide film containing fluorine 失效
标题翻译：形成含氟硅氧烷膜的方法
公开(公告)号：US5215787A
公开(公告)日：1993-06-01
申请号：US820254
申请日：1992-01-14
申请人： Tetsuya Homma
发明人： Tetsuya Homma
IPC分类号： H01L21/283 , C23C16/40 , H01L21/314 , H01L21/316 , H01L21/768 , H01L23/522
CPC分类号： H01L21/02271 , C23C16/401 , H01L21/02131 , H01L21/31625 , H01L21/76801
摘要： It is an object of the present invention to provide an excellent silicon oxide film formed at a temperature of 200.degree. C. or less, a method of forming the silicon oxide film, and a selective growing method. According to the present invention, by using a vapor containing alkoxyfluorosilane as a main component, a silicon oxide film containing fluorine is formed at a temperature of 200.degree. C. or less in a reaction chamber having a predetermined temperature and a predetermined pressure. In addition, an organic film such as a photoresist film is used as a mask to selectively form the silicon oxide film. Although the silicon oxide film containing fluorine and formed on the basis of the present invention is formed at a very low temperature of 30.degree. C., this silicon oxide film has a water content smaller than that of a silicon oxide film formed at a temperature of 250.degree. C. in a conventional method. In addition, the film properties of the silicon oxide film according to the present invention are better than those of the silicon oxide film formed in the conventional method. Furthermore, a two-layered aluminum wiring structure can be easily formed by the selective growing method.

8. 发明授权

US5840631A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5840631A
公开(公告)日：1998-11-24
申请号：US562991
申请日：1995-11-27
申请人： Akira Kubo , Tetsuya Homma , Koji Kishimoto
发明人： Akira Kubo , Tetsuya Homma , Koji Kishimoto
IPC分类号： C23C16/40 , H01L21/205 , H01L21/316 , H01L21/768 , H01L23/522 , H01L21/443
CPC分类号： H01L21/02164 , C23C16/401 , H01L21/02216 , H01L21/02271 , H01L21/02277 , H01L21/31612 , H01L21/76801 , H01L2924/0002
摘要： A method of manufacturing a semiconductor device includes the following steps. A lower wiring layer is formed on a semiconductor substrate through an insulating film. A compound gas having a catalysis for promoting formation of silicon oxide is added in an atmosphere using a main component gas consisting of ozone, water vapor, and one of alkoxysilane and organosiloxane as a source gas to form a silicon oxide film by a chemical vapor deposition (CVD) method directly on a surface of the semiconductor substrate on which the lower wiring layer is formed. An upper wiring layer is formed on the silicon oxide film.
摘要翻译：一种制造半导体器件的方法包括以下步骤。通过绝缘膜在半导体衬底上形成下布线层。在气氛中使用由臭氧，水蒸气和烷氧基硅烷和有机硅氧烷之一组成的主要成分气体作为源气体，在气氛中加入具有促进氧化硅形成的催化剂的复合气体，通过化学气相沉积法形成氧化硅膜（CVD）方法直接在其上形成下布线层的半导体衬底的表面上。在氧化硅膜上形成上部布线层。

9. 发明授权

US5744378A Method for fabricating a semiconductor device having multilevel interconnections 失效
标题翻译：制造具有多层互连的半导体器件的方法
公开(公告)号：US5744378A
公开(公告)日：1998-04-28
申请号：US755198
申请日：1996-11-25
申请人： Tetsuya Homma
发明人： Tetsuya Homma
IPC分类号： C23C16/34 , C23C16/40 , C23C16/50 , C23C16/511 , H01L21/314 , H01L21/318 , H01L21/768 , H01L23/522 , H01L21/28
CPC分类号： H01L21/3145 , H01L21/76801
摘要： At least one of an interlayer insulating film is formed by fluorine contained silicon oxynitride which is obtained by chemical deposition growth process using fluoroalkoxysilane gas, nitrogen gas contained gas, and oxygen gas contained gas. The at least one-film is formed at a temperature of lower than 200.degree. C. As a result, reliability of a semiconductor device to be fabricated as described above is enhanced.
摘要翻译：通过使用氟代烷氧基硅烷气体，含氮气体和含氧气体的化学沉积生长工艺获得的含氟氮氧化硅形成层间绝缘膜中的至少一个。在低于200℃的温度下形成至少一层膜。因此，如上所述制造的半导体器件的可靠性提高。

10. 发明授权

US5506177A Fabrication process for multilevel interconnections in a semiconductor device 失效
标题翻译：半导体器件中多电平互连的制造工艺
公开(公告)号：US5506177A
公开(公告)日：1996-04-09
申请号：US394943
申请日：1995-02-24
申请人： Koji Kishimoto , Tetsuya Homma
发明人： Koji Kishimoto , Tetsuya Homma
IPC分类号： H01L23/522 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76801 , H01L21/76828 , H01L21/76834
摘要： After forming lower level wiring and plasma oxide layer, SOG film is applied by applying a solution containing hydrogen silsesquioxane as primary component under rotation. Pre-baking of the SOG film is performed by a first heat treatment and causes reflow thereof by a second heat treatment at a temperature higher than the first heat treatment. Subsequently, another plasma oxide layer is formed. By this, in an interlayer insulation layer including SOG film, occurrence of crack and so forth can be prevented and water resistance can be improved.
摘要翻译：在形成下层布线和等离子体氧化物层之后，通过施加含有氢倍半硅氧烷作为主要组分的溶液来施加SOG膜。 SOG膜的预烘烤通过第一热处理进行，并且在比第一热处理高的温度下通过第二热处理使其回流。随后，形成另一等离子体氧化物层。由此，在包含SOG膜的层间绝缘层中，可以防止发生裂纹等，并且可以提高耐水性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式