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1. 发明授权

US6127675A Linear illumination device 失效
公开(公告)号：US6127675A
公开(公告)日：2000-10-03
申请号：US238394
申请日：1999-01-27
申请人： Tetsuroh Nakamura , Kouki Hongou , Eiichiro Tanaka , Shinji Fujiwara , Takahiko Murata , Yuka Kajita
发明人： Tetsuroh Nakamura , Kouki Hongou , Eiichiro Tanaka , Shinji Fujiwara , Takahiko Murata , Yuka Kajita
IPC分类号： H04N1/028 , H04N1/031 , G02B6/08 , H04N1/04
CPC分类号： H04N1/02835 , H04N1/02815 , H04N1/02885 , H04N1/0289 , H04N1/0311 , H04N1/0312 , H04N1/0316 , Y10S362/80
摘要： A linear illumination device of the present invention includes: a guide made of a light transmitting material extending in a first direction, having a side face and at least one end face; at least one light emitter for allowing light to enter interior of the guide from the at least one end face of the guide; and a light diffusing section formed on part of the side face of the guide, for diffusing the light incident thereon, wherein at least part of the light entering the interior of the guide goes out from part of the side face of the guide facing the light diffusing section, thereby providing substantially linear illumination light along the first direction.

2. 发明授权

US06268600B1 Linear illumination device 失效
标题翻译：线性照明装置
公开(公告)号：US06268600B1
公开(公告)日：2001-07-31
申请号：US09344075
申请日：1999-06-25
申请人： Tetsuroh Nakamura , Kouki Hongou , Eiichiro Tanaka , Shinji Fujiwara , Takahiko Murata , Yuka Kajita
发明人： Tetsuroh Nakamura , Kouki Hongou , Eiichiro Tanaka , Shinji Fujiwara , Takahiko Murata , Yuka Kajita
IPC分类号： G02B600
CPC分类号： G02B6/0001 , G02B6/0061 , H04N1/02835 , H04N1/0289 , Y10S362/806
摘要： A linear illumination device of the present invention includes: a guide made of a light transmitting material extending in a first direction, having a side face and at least one end face; at least one light emitter for allowing light to enter interior of the guide from the at least one end face of the guide; and a light diffusing section formed on part of the side face of the guide, for diffusing the light incident thereon by refraction, wherein at least part of the light entering the interior of the guide goes out from part of the side face of the guide facing the light diffusing section, thereby providing substantially linear illumination light along the first direction.
摘要翻译：本发明的线性照明装置包括：由沿第一方向延伸的透光材料制成的导向件，具有侧面和至少一个端面; 至少一个光发射器，用于允许光从所述引导件的所述至少一个端面进入所述引导件的内部; 以及形成在引导件的侧面的一部分上的光扩散部分，用于通过折射扩散入射到其上的光，其中进入引导件内部的光的至少一部分从引导面的侧面的一部分光扩散部分，从而沿着第一方向提供基本上线性的照明光。

3. 发明授权

US5969343A Linear illumination device 失效
公开(公告)号：US5969343A
公开(公告)日：1999-10-19
申请号：US608744
申请日：1996-02-29
申请人： Tetsuroh Nakamura , Kouki Hongou , Eiichiro Tanaka , Shinji Fujiwara , Takahiko Murata , Yuka Kajita
发明人： Tetsuroh Nakamura , Kouki Hongou , Eiichiro Tanaka , Shinji Fujiwara , Takahiko Murata , Yuka Kajita
IPC分类号： H04N1/028 , H04N1/031 , G02B6/08 , H04N1/04
CPC分类号： H04N1/02835 , H04N1/02815 , H04N1/02885 , H04N1/0289 , H04N1/0311 , H04N1/0312 , H04N1/0316 , Y10S362/80
摘要： A linear illumination device of the present invention includes: a guide made of a light transmitting material extending in a first direction, having a side face and at least one end face; at least one light emitter for allowing light to enter interior of the guide from the at least one end face of the guide; and a light diffusing section formed on part of the side face of the guide, for diffusing the light incident thereon, wherein at least part of the light entering the interior of the guide goes out from part of the side face of the guide facing the light diffusing section, thereby providing substantially linear illumination light along the first direction.

4. 发明授权

US6072171A Linear illumination device 失效
标题翻译：线性照明装置
公开(公告)号：US6072171A
公开(公告)日：2000-06-06
申请号：US965755
申请日：1997-11-10
申请人： Tetsuroh Nakamura , Kouki Hongou , Eiichiro Tanaka , Shinji Fujiwara , Takahiko Murata , Yuka Kajita
发明人： Tetsuroh Nakamura , Kouki Hongou , Eiichiro Tanaka , Shinji Fujiwara , Takahiko Murata , Yuka Kajita
IPC分类号： H04N1/028 , H04N1/031 , G02B6/08 , H04N1/04
CPC分类号： H04N1/02835 , H04N1/02815 , H04N1/02885 , H04N1/0289 , H04N1/0311 , H04N1/0312 , H04N1/0316 , Y10S362/80
摘要： A linear illumination device of the present invention includes: a guide made of a light transmitting material extending in a first direction, having a side face and at least one end face; at least one light emitter for allowing light to enter interior of the guide from the at least one end face of the guide; and a light diffusing section formed on part of the side face of the guide, for diffusing the light incident thereon, wherein at least part of the light entering the interior of the guide goes out from part of the side face of the guide facing the light diffusing section, thereby providing substantially linear illumination light along the first direction.
摘要翻译：本发明的线性照明装置包括：由沿第一方向延伸的透光材料制成的导向件，具有侧面和至少一个端面; 至少一个光发射器，用于允许光从所述引导件的所述至少一个端面进入所述引导件的内部; 以及形成在所述引导件的侧面的一部分上的光漫射部分，用于使入射到其上的光扩散，其中进入所述引导件内部的光的至少一部分从所述引导件的面向所述光的所述侧面的部分出来从而沿第一方向提供基本上线性的照明光。

5. 发明授权

US5835142A Direct contact type image sensor and its production method 失效
标题翻译：直接接触式图像传感器及其制作方法
公开(公告)号：US5835142A
公开(公告)日：1998-11-10
申请号：US487971
申请日：1995-06-07
申请人： Tetsuro Nakamura , Masahiro Nakagawa , Eiichiro Tanaka , Shinji Fujiwara
发明人： Tetsuro Nakamura , Masahiro Nakagawa , Eiichiro Tanaka , Shinji Fujiwara
IPC分类号： H04N1/031 , H04N5/225
CPC分类号： H04N1/0312 , H04N1/0311 , H04N1/0316
摘要： A direct contact type image sensor includes an optical fiber array plate including a transparent substrate and an optical fiber array and having a lower face brought into close contact with an original document. A semiconductor image sensor chip including a photosensor array is mounted on an upper face of the optical fiber array plate by transparent photo-setting and insulating resin. A circuit conductive layer is formed on an upper face of the transparent substrate, and a bump electrode is formed on a lower face of the semiconductor image sensor chip so as to be brought into contact with the circuit conductive layer. A light source is provided for illuminating the original document. The optical fiber array plate is formed, on the upper face, with a slit for allowing light from the light source to pass therethrough. A first light shielding layer is provided at other portions of the lower face of the optical fiber array plate than that corresponding to the optical fiber array, and a second light shielding layer is provided at other portions of the upper face of the optical fiber array plate than those corresponding to the optical fiber array and the slit.
摘要翻译：直接接触型图像传感器包括具有透明基板和光纤阵列的光纤阵列板，并且具有与原稿紧密接触的下表面。包括光电传感器阵列的半导体图像传感器芯片通过透明光固定和绝缘树脂安装在光纤阵列板的上表面上。在透明基板的上表面上形成电路导电层，并且在半导体图像传感器芯片的下表面上形成凸起电极以与电路导电层接触。提供用于照亮原稿的光源。光纤阵列板在上表面上形成有用于使来自光源的光通过的狭缝。在光纤阵列板的下表面的与光纤阵列相对的另一部分设置有第一遮光层，第二遮光层设置在光纤阵列板的上表面的其他部分比对应于光纤阵列和狭缝的那些。

6. 发明授权

US5556809A Direct-contact type image sensor device, an image sensor unit, and methods for producing the same 失效
标题翻译：直接接触型图像传感器装置，图像传感器单元及其制造方法
公开(公告)号：US5556809A
公开(公告)日：1996-09-17
申请号：US351020
申请日：1994-12-07
申请人： Masahiro Nakagawa , Tetsuro Nakamura , Shinji Fujiwara , Eiichiro Tanaka
发明人： Masahiro Nakagawa , Tetsuro Nakamura , Shinji Fujiwara , Eiichiro Tanaka
IPC分类号： H04N1/031 , H01L21/60
CPC分类号： H04N1/0316 , H04N1/0313
摘要： A direct-contact type image sensor device according to the present invention includes: a light-transmitting substrate having an upper surface and a lower surface; a patterned conductor layer formed over the upper surface of the light-transmitting substrate; e transparent electrically conductive layer formed on the lower surface of the light-transmitting substrate; an image sensor chip mounted face-down on the upper surface of the light-transmitting substrate, with an insulating resin layer being interposed between the image sensor chip and the upper surface of the light-transmitting substrate, the image sensor chip being mounted by a flip-chip-bonding method, a light-interrupting layer provided between the patterned conductor layer and the upper surface of the light-transmitting substrate; and a light-interrupting portion for interrupting a portion of a light beam, the light beam being radiated on an original through the light-transmitting substrate by a light source disposed above the light-transmitting substrate. The image sensor chip and the light-interrupting portion serve as an optical throttle for the light beam.
摘要翻译：根据本发明的直接接触型图像传感器装置包括：具有上表面和下表面的透光基底; 形成在所述透光基板的上表面上的图案化导体层; 透明导电层，形成在透光基板的下表面上; 图像传感器芯片，其面向下安装在透光基板的上表面上，绝缘树脂层插入在图像传感器芯片和透光基板的上表面之间，图像传感器芯片由倒装芯片接合方法，设置在图案化导体层和透光基板的上表面之间的遮光层; 以及用于中断光束的一部分的遮光部，通过透光基板通过设置在透光基板上方的光源将光束照射在原稿上。图像传感器芯片和遮光部分用作光束的光学节流阀。

7. 发明授权

US5477047A Direct-contact type image sensor device, an image sensor unit, and methods for producing the same 失效
标题翻译：直接接触型图像传感器装置，图像传感器单元及其制造方法
公开(公告)号：US5477047A
公开(公告)日：1995-12-19
申请号：US141328
申请日：1993-10-21
申请人： Masahiro Nakagawa , Tetsuro Nakamura , Shinji Fujiwara , Eiichiro Tanaka
发明人： Masahiro Nakagawa , Tetsuro Nakamura , Shinji Fujiwara , Eiichiro Tanaka
IPC分类号： H04N1/031 , H01J40/14
CPC分类号： H04N1/0316 , H04N1/0313
摘要： A direct-contact type image sensor device according to the present invention includes: a light-transmitting substrate having an upper surface and a lower surface; a patterned conductor layer formed over the upper surface of the light-transmitting substrate; a transparent electrically conductive layer formed on the lower surface of the light-transmitting substrate; an image sensor chip mounted face-down on the upper surface of the light-transmitting substrate, with an insulating resin layer being interposed between the image sensor chip and the upper surface of the light-transmitting substrate, the image sensor chip being mounted by a flip-chip-bonding method, a light-interrupting layer provided between the patterned conductor layer and the upper surface of the light-transmitting substrate; and a light-interrupting portion for interrupting a portion of a light beam, the light beam being radiated on an original through the light-transmitting substrate by a light source disposed above the light-transmitting substrate. The image sensor chip and the light-interrupting portion serve as an optical throttle for the light beam.
摘要翻译：根据本发明的直接接触型图像传感器装置包括：具有上表面和下表面的透光基底; 形成在所述透光基板的上表面上的图案化导体层; 形成在所述透光基板的下表面上的透明导电层; 图像传感器芯片，其面向下安装在透光基板的上表面上，绝缘树脂层插入在图像传感器芯片和透光基板的上表面之间，图像传感器芯片由倒装芯片接合方法，设置在图案化导体层和透光基板的上表面之间的遮光层; 以及用于中断光束的一部分的遮光部，通过透光基板通过设置在透光基板上方的光源将光束照射在原稿上。图像传感器芯片和遮光部分用作光束的光学节流阀。

8. 发明授权

US5408121A Semiconductor device, an image sensor device, and methods for producing the same 失效
标题翻译：半导体装置，图像传感器装置及其制造方法
公开(公告)号：US5408121A
公开(公告)日：1995-04-18
申请号：US131125
申请日：1993-10-04
申请人： Tetsuro Nakamura , Eiichiro Tanaka , Shinji Fujiwara , Masahiro Nakagawa
发明人： Tetsuro Nakamura , Eiichiro Tanaka , Shinji Fujiwara , Masahiro Nakagawa
IPC分类号： H01L21/56 , H01L21/60 , H01L31/0203 , H01L27/14 , H01L31/00
CPC分类号： H01L31/0203 , H01L21/563 , H01L24/81 , H01L2224/13111 , H01L2224/13144 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83224 , H01L2224/83874 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01065 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , Y10T29/49128 , Y10T29/49144
摘要： A semiconductor device according to the present invention includes: a light-transmitting substrate having a first surface and a second surface; a circuit conductor layer formed on the first surface of the light-transmitting substrate; a semiconductor chip having electrodes formed on a surface thereof, the semiconductor device being mounted face-down on the first surface of the light-transmitting substrate; a photo-thermal cross-linkable insulating resin layer for fixing the semiconductor chip on the light-transmitting substrate; a plated metal layer formed on at least a portion of the circuit conductor layer, the electrodes of the semiconductor chip being connected to the circuit conductor layer through the plated metal layer; an alloy layer formed in an abutting portion between each plated metal layer and the circuit conductor layer; and a second alloy layer formed in an abutting portion between each electrode and each plated metal layer, the alloy layers being formed by melting and recoagulating the plated metal layer upon the circuit conductor layer.
摘要翻译：根据本发明的半导体器件包括：具有第一表面和第二表面的透光衬底; 形成在所述透光性基板的第一面上的电路导体层; 具有形成在其表面上的电极的半导体芯片，所述半导体器件面朝下安装在所述透光衬底的第一表面上; 用于将所述半导体芯片固定在所述透光基板上的光热交联绝缘树脂层; 形成在所述电路导体层的至少一部分上的电镀金属层，所述半导体芯片的电极通过所述电镀金属层与所述电路导体层连接; 在每个镀覆的金属层和电路导体层之间的邻接部分中形成的合金层; 以及在每个电极和每个电镀金属层之间的邻接部分中形成的第二合金层，通过在电路导体层上熔化和重新填充镀覆的金属层来形成合金层。

9. 发明授权

US5405809A Semiconductor device, an image sensor device, and methods for producing the same 失效
公开(公告)号：US5405809A
公开(公告)日：1995-04-11
申请号：US264530
申请日：1994-06-23
申请人： Tetsuro Nakamura , Eiichiro Tanaka , Shinji Fujiwara , Masahiro Nakagawa
发明人： Tetsuro Nakamura , Eiichiro Tanaka , Shinji Fujiwara , Masahiro Nakagawa
IPC分类号： H01L21/56 , H01L21/60 , H01L31/0203
CPC分类号： H01L31/0203 , H01L21/563 , H01L24/81 , H01L2224/13111 , H01L2224/13144 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83224 , H01L2224/83874 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01065 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , Y10T29/49128 , Y10T29/49144
摘要： A semiconductor device according to the present invention includes: a light-transmitting substrate having a first surface and a second surface; a circuit conductor layer formed on the first surface of the light-transmitting substrate; a semiconductor chip having electrodes formed on a surface thereof, the semiconductor device being mounted face-down on the first surface of the light-transmitting substrate; a photo-thermal cross-linkable insulating resin layer for fixing the semiconductor chip on the light-transmitting substrate; a plated metal layer formed on at least a portion of the circuit conductor layer, the electrodes of the semiconductor chip being connected to the circuit conductor layer through the plated metal layer; an alloy layer formed in an abutting portion between each plated metal layer and the circuit conductor layer; and a second alloy layer formed in an abutting portion between each electrode and each plated metal layer, the alloy layers being formed by melting and recoagulating the plated metal layer upon the circuit conductor layer.

10. 发明授权

US4722880A Photoconductor having amorphous silicon hydride 失效
标题翻译：具有非晶硅氢化物的光电导体
公开(公告)号：US4722880A
公开(公告)日：1988-02-02
申请号：US783233
申请日：1985-10-02
申请人： Etsuya Takeda , Eiichiro Tanaka , Shinji Fujiwara
发明人： Etsuya Takeda , Eiichiro Tanaka , Shinji Fujiwara
IPC分类号： G03G5/08 , G03G5/04 , G03G5/082 , G03G5/085
CPC分类号： G03G5/08228 , G03G5/08242
摘要： A photoconductor which comprises, on a conductive substrate, a photoconductive layer of amorphous silicon hydride to which a first impurity consisting essentially of an element of Group Va or Group VIa of the Periodic Table is added. The contents of the first impurity and hydrogen in the amorphous silicon hydride layer vary in section from one side toward the other side of said layer.
摘要翻译：一种光电导体，其在导电基板上包括基本上由元素周期表第Va族或第VIa族元素组成的第一杂质的非晶硅氢化物的光电导层。非晶硅氢化物层中的第一杂质和氢的含量从所述层的一侧向另一侧的截面变化。

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