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1. 发明申请

US20080253132A1 DISPLAY UNIT 失效
标题翻译：显示单元
公开(公告)号：US20080253132A1
公开(公告)日：2008-10-16
申请号：US11680787
申请日：2007-03-01
申请人： Tetsuo Urabe , Yuichi Iwase , Koichi Tsukihara , Yoichi Tomo , Toshihiro Fukuda
发明人： Tetsuo Urabe , Yuichi Iwase , Koichi Tsukihara , Yoichi Tomo , Toshihiro Fukuda
IPC分类号： F21V8/00
CPC分类号： G02B6/0018 , G02B17/006 , G02F1/133504 , H04M1/22 , H04W52/027 , Y02D70/122
摘要： A display unit which the view angle is limited and the front luminance is improved is provided. The display unit includes a display device, and a light guiding part which is provided to face the display device, has an incident face on the side opposing to the display device, an emitting face on the opposite side of the display device, and a reflective face on the side face, and has a cross section expanding from the incident face to the emitting face.
摘要翻译：提供了视角被限制并且改善了前方亮度的显示单元。显示单元包括显示装置和设置为面向显示装置的导光部，在与显示装置相对的一侧具有入射面，在显示装置的相对侧具有发光面，反射面对侧面，并且具有从入射面向发射面扩展的横截面。

2. 发明申请

US20120262943A1 DISPLAY UNIT 审中-公开
标题翻译：显示单元
公开(公告)号：US20120262943A1
公开(公告)日：2012-10-18
申请号：US13529526
申请日：2012-06-21
申请人： Tetsuo Urabe , Yuichi Iwase , Koichi Tsukihara , Yoichi Tomo , Toshihiro Fukuda
发明人： Tetsuo Urabe , Yuichi Iwase , Koichi Tsukihara , Yoichi Tomo , Toshihiro Fukuda
IPC分类号： F21V13/02
CPC分类号： G02B6/0018 , G02B17/006 , G02F1/133504 , H04M1/22 , H04W52/027 , Y02D70/122
摘要： A display unit in which the view angle is limited and the front luminance is improved. The display unit includes a display device, and a light guiding part which is provided to face the display device. The light guiding part, has an incident face facing the display device, an emitting face, a reflective surface on a side thereof, and a cross section expanding from the incident face to the emitting face.
摘要翻译：显示单元，其中视角被限制并且正面亮度得到改善。显示单元包括显示装置和设置成面向显示装置的导光部。导光部具有面向显示装置的入射面，发光面，其一侧的反射面以及从入射面向发射面扩展的截面。

3. 发明授权

US08226256B2 Display unit 失效
标题翻译：显示单元
公开(公告)号：US08226256B2
公开(公告)日：2012-07-24
申请号：US11680787
申请日：2007-03-01
申请人： Tetsuo Urabe , Yuichi Iwase , Koichi Tsukihara , Yoichi Tomo , Toshihiro Fukuda
发明人： Tetsuo Urabe , Yuichi Iwase , Koichi Tsukihara , Yoichi Tomo , Toshihiro Fukuda
IPC分类号： G09F13/04
CPC分类号： G02B6/0018 , G02B17/006 , G02F1/133504 , H04M1/22 , H04W52/027 , Y02D70/122
摘要： A display unit which the view angle is limited and the front luminance is improved is provided. The display unit includes a display device, and a light guiding part which is provided to face the display device, has an incident face on the side opposing to the display device, an emitting face on the opposite side of the display device, and a reflective face on the side face, and has a cross section expanding from the incident face to the emitting face.
摘要翻译：提供了视角被限制并且改善了前方亮度的显示单元。显示单元包括显示装置和设置为面向显示装置的导光部，在与显示装置相对的一侧具有入射面，在显示装置的相对侧具有发光面，反射面对侧面，并且具有从入射面向发射面扩展的横截面。

4. 发明授权

US08193008B2 Method of forming semiconductor thin film and semiconductor thin film inspection apparatus 失效
标题翻译：形成半导体薄膜的方法和半导体薄膜检测装置
公开(公告)号：US08193008B2
公开(公告)日：2012-06-05
申请号：US12468969
申请日：2009-05-20
申请人： Nobuhiko Umezu , Koichi Tsukihara , Hirohisa Amago , Go Matsunobu , Katsuya Shirai
发明人： Nobuhiko Umezu , Koichi Tsukihara , Hirohisa Amago , Go Matsunobu , Katsuya Shirai
IPC分类号： H01L21/66
CPC分类号： G01N21/956 , G01N2021/9513 , H01L21/02532 , H01L21/02675 , H01L22/12 , H01L27/1285 , H01L29/66765 , H01L29/78678
摘要： A method of forming a semiconductor thin film includes the steps of: forming an amorphous semiconductor thin film on a substrate; forming a crystalline semiconductor thin film partially in each element region by applying laser light to the amorphous semiconductor thin film to selectively perform a heating process on the amorphous semiconductor thin film, thereby crystallizing the amorphous semiconductor thin film in a region irradiated with the laser light; and inspecting the crystallinity degree of the crystalline semiconductor thin film. The step of inspecting includes the steps of determining a contrast between the luminance of a crystallized region and the luminance of a non-crystallized region by applying light to the crystalline semiconductor thin film and the amorphous semiconductor thin film, and performing screening of the crystalline semiconductor thin film on the basis of the determined contrast.
摘要翻译：一种形成半导体薄膜的方法包括以下步骤：在衬底上形成非晶半导体薄膜; 通过对所述非晶半导体薄膜施加激光以选择性地对所述非晶半导体薄膜进行加热处理，从而在每个元件区域中部分地形成晶体半导体薄膜，从而使所述非晶半导体薄膜在被所述激光照射的区域中结晶。并检查结晶半导体薄膜的结晶度。检查步骤包括以下步骤：通过向结晶半导体薄膜和非晶半导体薄膜施加光来确定结晶区域的亮度与非结晶区域的亮度之间的对比度，并且执行晶体半导体薄膜在确定的对比的基础上。

5. 发明申请

US20090291511A1 METHOD OF FORMING SEMICONDUCTOR THIN FILM AND SEMICONDUCTOR THIN FILM INSPECTION APPARATUS 失效
标题翻译：形成半导体薄膜和半导体薄膜检查装置的方法
公开(公告)号：US20090291511A1
公开(公告)日：2009-11-26
申请号：US12468969
申请日：2009-05-20
申请人： Nobuhiko Umezu , Koichi Tsukihara , Hirohisa Amago , Go Matsunobu , Katsuya Shirai
发明人： Nobuhiko Umezu , Koichi Tsukihara , Hirohisa Amago , Go Matsunobu , Katsuya Shirai
IPC分类号： H01L21/66 , H01L21/20 , G01N21/59
CPC分类号： G01N21/956 , G01N2021/9513 , H01L21/02532 , H01L21/02675 , H01L22/12 , H01L27/1285 , H01L29/66765 , H01L29/78678
摘要： A method of forming a semiconductor thin film includes the steps of: forming an amorphous semiconductor thin film on a substrate; forming a crystalline semiconductor thin film partially in each element region by applying laser light to the amorphous semiconductor thin film to selectively perform a heating process on the amorphous semiconductor thin film, thereby crystallizing the amorphous semiconductor thin film in a region irradiated with the laser light; and inspecting the crystallinity degree of the crystalline semiconductor thin film. The step of inspecting includes the steps of determining a contrast between the luminance of a crystallized region and the luminance of a non-crystallized region by applying light to the crystalline semiconductor thin film and the amorphous semiconductor thin film, and performing screening of the crystalline semiconductor thin film on the basis of the determined contrast.
摘要翻译：一种形成半导体薄膜的方法包括以下步骤：在衬底上形成非晶半导体薄膜; 通过对所述非晶半导体薄膜施加激光以选择性地对所述非晶半导体薄膜进行加热处理，从而在每个元件区域中部分地形成晶体半导体薄膜，从而使所述非晶半导体薄膜在被所述激光照射的区域中结晶。并检查结晶半导体薄膜的结晶度。检查步骤包括以下步骤：通过向结晶半导体薄膜和非晶半导体薄膜施加光来确定结晶区域的亮度与非结晶区域的亮度之间的对比度，并且执行晶体半导体薄膜在确定的对比的基础上。

6. 发明授权

US08592713B2 Irradiating apparatus, semiconductor device manufacturing apparatus, semiconductor device manufacturing method, and display device manufacturing method 失效
标题翻译：照射装置，半导体装置制造装置，半导体装置的制造方法以及显示装置的制造方法
公开(公告)号：US08592713B2
公开(公告)日：2013-11-26
申请号：US12115922
申请日：2008-05-06
申请人： Koichi Tsukihara
发明人： Koichi Tsukihara
IPC分类号： H01L21/268 , G02B26/10 , B23K26/073
CPC分类号： B23K26/067 , B23K26/0648 , B23K26/0665 , B23K26/0676 , B23K26/0853 , B23K2101/40 , G02F1/1303 , G02F2202/104 , H01L21/02675 , H01S5/005 , H01S5/4012 , H01S5/4025
摘要： An irradiating apparatus for irradiating an irradiation object with beam light emitted from a semiconductor laser, wherein letting w be a radius of a beam for irradiating the irradiation object, Δ be a rate of individual difference in angle of divergence of the semiconductor laser, and λ be beam wavelength of the semiconductor laser, a focal position of an irradiating optical system interposed between the semiconductor laser and the irradiation object is defocused such that a distance z between the focal position and the irradiation object is z = π · w 2 λ · 1 - Δ 2 ( 1 - Δ 2 ) 2 + 1 . [ Equation ⁢ ⁢ 1 ]
摘要翻译：一种照射装置，用于用从半导体激光器发射的光束照射照射物体，其中使w为用于照射被照射物体的光束的半径，Delta为半导体激光器的发散角度的独立差异率和λ 作为半导体激光器的光束波长，插入在半导体激光器和照射物体之间的照射光学系统的焦点位置被散焦，使得焦点位置和照射对象之间的距离z为z = pi·w 2λ·1 - Delta 2（1 - Delta 2）2 + 1。 [等式1]

7. 发明授权

US08451536B2 Irradiation apparatus and manufacturing method for semiconductor device 失效
标题翻译：半导体装置的照射装置及其制造方法
公开(公告)号：US08451536B2
公开(公告)日：2013-05-28
申请号：US12792327
申请日：2010-06-02
申请人： Koichi Tsukihara
发明人： Koichi Tsukihara
IPC分类号： G02B27/10
CPC分类号： B23K26/0738 , B23K26/0608 , B23K26/0665 , B23K26/0676 , H01L21/02532 , H01L21/02678 , H01L21/268
摘要： Disclosed herein is an irradiation apparatus including: laser light source; a polarization splitting section configured to split laser light emitted from the laser light source into first linearly polarized light and second linearly polarized light different in polarization direction; a light beam dividing section configured to divide the first or second linearly polarized light into a plurality of light beams; a quarter-wave plate array composed of a plurality of first quarter-wave plates for converting some of the light beams into right circularly polarized light and a plurality of second quarter-wave plates for converting the other of the light beams into left circularly polarized light, the first quarter-wave plates and the second quarter-wave plates being alternately arranged in a first direction perpendicular to an optical axis; and a projection optical system for condensing the right circularly polarized light and the left circularly polarized light toward a work surface to be irradiated.
摘要翻译：本发明公开了一种照射装置，包括：激光光源; 偏振分束部，被配置为将从激光光源发射的激光分为第一直线偏振光和偏振方向不同的第二线偏振光; 光束分割部，被配置为将所述第一或第二直线偏振光分割为多个光束; 由用于将一些光束转换成右圆偏振光的多个第一四分之一波片组成的四分之一波片阵列和用于将另一个光束转换成左圆偏振光的多个第二四分之一波片第一四分之一波片和第二四分之一波片在垂直于光轴的第一方向交替布置; 以及用于将正圆偏振光和左圆偏振光朝向要照射的工作表面聚光的投影光学系统。

8. 发明授权

US07154673B2 Light irradiator 失效
标题翻译：光照射器
公开(公告)号：US07154673B2
公开(公告)日：2006-12-26
申请号：US10533946
申请日：2003-10-24
申请人： Koichi Tsukihara , Koichi Tatsuki
发明人： Koichi Tsukihara , Koichi Tatsuki
IPC分类号： G02B27/10
CPC分类号： B23K26/0608 , B23K26/0604 , H01L21/268
摘要： A light illuminating apparatus used for a laser annealing apparatus includes a first light splitting unit (16) and a second light splitting unit (20) for splitting a sole laser beam into n laser beams, and a synthesis unit (21) for synthesizing an m'th laser beam, radiated from the first light splitting unit (16), and an m'th laser beam radiated from the second light splitting unit (20), to each other, where m is an integer not less than 1 and not larger than n. The first light splitting unit (16) and the second light splitting unit (20) are formed by the same optical components and are arrayed inverted with respect to each other.
摘要翻译：用于激光退火装置的光照射装置包括：第一分光单元（16）和用于将唯一激光束分割为n个激光束的第二分光单元（20），以及合成单元（21），用于合成m 从第一分光单元（16）辐射的第一激光束和从第二分光单元（20）辐射的第m个激光束彼此相对，其中m是不小于1且不大于比n。第一分光单元（16）和第二分光单元（20）由相同的光学部件形成，并相对于彼此反转。

9. 发明申请

US20050270650A1 Light irradiator 失效
标题翻译：光照射器
公开(公告)号：US20050270650A1
公开(公告)日：2005-12-08
申请号：US10533946
申请日：2003-10-24
申请人： Koichi Tsukihara , Koichi Tatsuki
发明人： Koichi Tsukihara , Koichi Tatsuki
IPC分类号： H01L21/268 , B23K26/06 , G02B27/10
CPC分类号： B23K26/0608 , B23K26/0604 , H01L21/268
摘要： A light illuminating apparatus used for a laser annealing apparatus includes a first light splitting unit (16) and a second light splitting unit (20) for splitting a sole laser beam into n laser beams, and a synthesis unit (21) for synthesizing an m'th laser beam, radiated from the first light splitting unit (16), and an m'th laser beam radiated from the second light splitting unit (20), to each other, where m is an integer not less than 1 and not larger than n. The first light splitting unit (16) and the second light splitting unit (20) are formed by the same optical components and are arrayed inverted with respect to each other.
摘要翻译：用于激光退火装置的光照射装置包括：第一分光单元（16）和用于将唯一激光束分割为n个激光束的第二分光单元（20），以及合成单元（21），用于合成m 从第一分光单元（16）辐射的第一激光束和从第二分光单元（20）辐射的第m个激光束彼此相对，其中m是不小于1且不大于比n。第一分光单元（16）和第二分光单元（20）由相同的光学部件形成，并相对于彼此反转。

10. 发明授权

US08518756B2 Method for crystallizing thin film, method for manufacturing thin film semiconductor device, method for manufacturing electronic apparatus, and method for manufacturing display device 失效
标题翻译：薄膜结晶方法，薄膜半导体器件的制造方法，电子设备的制造方法以及显示装置的制造方法
公开(公告)号：US08518756B2
公开(公告)日：2013-08-27
申请号：US13441556
申请日：2012-04-06
申请人： Nobuhiko Umezu , Koichi Tsukihara , Goh Matsunobu , Yoshio Inagaki , Koichi Tatsuki , Shin Hotta , Katsuya Shirai
发明人： Nobuhiko Umezu , Koichi Tsukihara , Goh Matsunobu , Yoshio Inagaki , Koichi Tatsuki , Shin Hotta , Katsuya Shirai
IPC分类号： H01L21/00
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02683 , H01L27/1281 , H01L27/1285
摘要： A method for crystallizing a thin film A gate insulating film formed on a substrate so as to cover a gate electrode. A light absorption layer is formed thereon through a buffer layer. Energy lines Lh are applied to the light absorption layer from a continuous-wave laser such as a semiconductor laser. This anneals only a surface side of the light absorption layer Lh and produces a crystalline silicon film obtained by crystallizing the amorphous silicon film using heat generated by thermal conversion of the energy lines Lh at the light absorption layer and heat of the annealing reaction.
摘要翻译：一种使薄膜结晶的方法在基板上形成的覆盖栅电极的栅极绝缘膜。通过缓冲层在其上形成光吸收层。能量线Lh由诸如半导体激光器的连续波激光器施加到光吸收层。这仅退光到光吸收层Lh的表面侧，并且产生通过使用在光吸收层处的能量线Lh的热转化和退火反应的热而产生的热而使非晶硅膜结晶而获得的结晶硅膜。

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