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1. 发明申请

US20150017587A1 COMPOSITION FOR FORMING FINE RESIST PATTERN AND PATTERN FORMING METHOD USING SAME 有权
标题翻译：用于形成精细图案的组合物和使用其的图案形成方法
公开(公告)号：US20150017587A1
公开(公告)日：2015-01-15
申请号：US14344943
申请日：2012-10-10
申请人： Tetsuo Okayasu , Takashi Sekito , Mashiro Ishii
发明人： Tetsuo Okayasu , Takashi Sekito , Mashiro Ishii
IPC分类号： G03F7/40 , G03F7/11
CPC分类号： G03F7/405 , C08F220/56 , C08F226/02 , G03F7/0392 , G03F7/11 , G03F7/325 , G03F7/40 , H01L21/0273
摘要： [Object] To provide a composition enabling to form a fine negative photoresist pattern free from troubles, such as, surface roughness, bridge defects, and resolution failure; and also to provide a pattern formation method using that composition.[Means to Solve the Problem] A fine pattern-forming composition is used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition. The fine pattern-forming composition comprises a polymer comprising a repeating unit having a structure of the following formula (A), (B) or (C): and a solvent. This composition is cast on a negative resist pattern obtained by development with an organic solvent developer, and then heated to form a fine pattern.
摘要翻译：本发明提供一种能够形成没有诸如表面粗糙度，桥接缺陷和分辨率故障等麻烦的细的负性光致抗蚀剂图案的组合物。并且还提供使用该组合物的图案形成方法。解决问题的方法利用化学放大型抗蚀剂组合物在形成负性抗蚀剂图案的过程中，通过对所述图案进行增肥来使抗微细图案形成用组合物小型化。精细图案形成组合物包含含有具有下式（A），（B）或（C）结构的重复单元的聚合物和溶剂。将该组合物浇铸在通过用有机溶剂显影剂显影获得的负型抗蚀剂图案上，然后加热形成精细图案。

2. 发明授权

US09448485B2 Composition for forming fine resist pattern and pattern forming method using same 有权
标题翻译：用于形成精细抗蚀剂图案的组合物和使用其的图案形成方法
公开(公告)号：US09448485B2
公开(公告)日：2016-09-20
申请号：US14344943
申请日：2012-10-10
申请人： Tetsuo Okayasu , Takashi Sekito , Masahiro Ishii
发明人： Tetsuo Okayasu , Takashi Sekito , Masahiro Ishii
IPC分类号： G03F7/40 , H01L21/027 , G03F7/32 , G03F7/11 , G03F7/039 , C08F220/56 , C08F226/02
CPC分类号： G03F7/405 , C08F220/56 , C08F226/02 , G03F7/0392 , G03F7/11 , G03F7/325 , G03F7/40 , H01L21/0273
摘要： [Object] To provide a composition enabling to form a fine negative photoresist pattern free from troubles, such as, surface roughness, bridge defects, and resolution failure; and also to provide a pattern formation method using that composition.[Means to Solve the Problem] A fine pattern-forming composition is used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition. The fine pattern-forming composition comprises a polymer comprising a repeating unit having a structure of the following formula (A), (B) or (C): and a solvent. This composition is cast on a negative resist pattern obtained by development with an organic solvent developer, and then heated to form a fine pattern.

3. 发明授权

US07799513B2 Process for preventing development defect and composition for use in the same 有权
标题翻译：用于预防发展缺陷和组合物的方法
公开(公告)号：US07799513B2
公开(公告)日：2010-09-21
申请号：US10518105
申请日：2003-06-10
申请人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
发明人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
IPC分类号： G03F7/00
CPC分类号： G03F7/11 , G03F7/168
摘要： The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 Å to 600 Å, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.
摘要翻译：（1）C4〜C15全氟烷基羧酸，C4〜C10全氟烷基磺酸和全氟己二酸的铵盐，四烷基铵盐或C1〜C4烷醇胺盐的预防显影缺陷用组合物，或（2）氟化烷基季铵无机酸的盐，其中所述表面活性剂以相对于酸与碱的比例为1:1-1:3的比例形成在直径为8英寸或更大的基材上的化学放大的光致抗蚀剂涂层上。在施加用于防止上述显影缺陷的组合物之前和/或之后烘烤化学放大的光致抗蚀剂涂层。然后，将具有显影缺陷防止组合物涂层的烘烤涂层曝光，曝光后烘烤和显影。通过该方法，与不使用用于防止显影缺陷的组合物的情况相比，显影处理后的光致抗蚀剂的膜厚减少量进一步大于100埃至600埃，并且显影缺陷在直径为8英寸以上的基板减少，并且可以形成具有良好横截面形状的抗蚀剂图案而不具有T形顶端形式等。

4. 发明授权

US07745093B2 Water soluble resin composition and method for pattern formation using the same 有权
标题翻译：水溶性树脂组合物及其形成方法
公开(公告)号：US07745093B2
公开(公告)日：2010-06-29
申请号：US11547707
申请日：2005-04-08
申请人： Takeshi Nishibe , Sung Eun Hong , Yusuke Takano , Tetsuo Okayasu
发明人： Takeshi Nishibe , Sung Eun Hong , Yusuke Takano , Tetsuo Okayasu
IPC分类号： G03F7/40 , G03F7/11
CPC分类号： G03F7/40 , H01L21/0273 , Y10S430/106 , Y10S430/11 , Y10S430/115 , Y10S430/162 , Y10S430/165
摘要： In the present invention, in a water soluble resin composition for use in a method for pattern formation in which a covering layer is provided on a resist pattern formed of a radiation-sensitive resin composition capable of coping with ArF exposure to increase the width of the resist pattern and thus to realize effective formation of higher density trench or hole pattern, the size reduction level of the resist pattern layer can be further increased as compared with that in the prior art technique, and, in addition, the size reduction level dependency of the coarse-and-fine resist pattern can be reduced. A method for pattern formation using the water soluble resin composition is also provided. The water soluble resin composition which is usable for the method for pattern formation applicable to ArF excimer laser irradiation comprises a water soluble resin, an acid generating agent capable of generating an acid upon heating, a surfactant, a crosslinking agent, and a water-containing solvent.
摘要翻译：在本发明中，在用于图案形成方法的水溶性树脂组合物中，其中在由能够应对ArF曝光的辐射敏感性树脂组合物形成的抗蚀剂图案上设置覆盖层以增加其宽度抗蚀剂图案，从而实现有效形成更高密度的沟槽或孔图案，与现有技术相比，抗蚀剂图案层的尺寸减小水平可以进一步提高，另外，尺寸缩小级依赖性可以减少粗细和抗蚀剂图案。还提供了使用水溶性树脂组合物的图案形成方法。可用于适用于ArF准分子激光照射的图案形成方法的水溶性树脂组合物包括水溶性树脂，加热时能产生酸的酸产生剂，表面活性剂，交联剂和含水的溶剂。

5. 发明申请

US20080193880A1 Water Soluble Resin Composition and Method for Pattern Formation Using the Same 有权
标题翻译：水溶性树脂组合物及其形成方法
公开(公告)号：US20080193880A1
公开(公告)日：2008-08-14
申请号：US11547707
申请日：2005-04-08
申请人： Takeshi Nishibe , Sung Eun Hong , Yusuke Takano , Tetsuo Okayasu
发明人： Takeshi Nishibe , Sung Eun Hong , Yusuke Takano , Tetsuo Okayasu
IPC分类号： G03F7/004
CPC分类号： G03F7/40 , H01L21/0273 , Y10S430/106 , Y10S430/11 , Y10S430/115 , Y10S430/162 , Y10S430/165
摘要： In the present invention, in a water soluble resin composition for use in a method for pattern formation in which a covering layer is provided on a resist pattern formed of a radiation-sensitive resin composition capable of coping with ArF exposure to increase the width of the resist pattern and thus to realize effective formation of higher density trench or hole pattern, the size reduction level of the resist pattern layer can be further increased as compared with that in the prior art technique, and, in addition, the size reduction level dependency of the coarse-and-fine resist pattern can be reduced. A method for pattern formation using the water soluble resin composition is also provided. The water soluble resin composition which is usable for the method for pattern formation applicable to ArF excimer laser irradiation comprises a water soluble resin, an acid generating agent capable of generating an acid upon heating, a surfactant, a crosslinking agent, and a water-containing solvent.
摘要翻译：在本发明中，在用于图案形成方法的水溶性树脂组合物中，其中在由能够应对ArF曝光的辐射敏感性树脂组合物形成的抗蚀剂图案上设置覆盖层以增加其宽度抗蚀剂图案，从而实现有效形成更高密度的沟槽或孔图案，与现有技术相比，抗蚀剂图案层的尺寸减小水平可以进一步提高，另外，尺寸缩小级依赖性可以减少粗细和抗蚀剂图案。还提供了使用水溶性树脂组合物的图案形成方法。可用于适用于ArF准分子激光照射的图案形成方法的水溶性树脂组合物包括水溶性树脂，加热时能产生酸的酸产生剂，表面活性剂，交联剂和含水的溶剂。

6. 发明申请

US20050221236A1 Process for preventing development defect and composition for use in the same 有权
标题翻译：用于预防发展缺陷和组合物的方法
公开(公告)号：US20050221236A1
公开(公告)日：2005-10-06
申请号：US10518105
申请日：2003-06-10
申请人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
发明人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
IPC分类号： G03F7/11 , G03F7/16 , G03F7/38 , H01L21/027 , G03F7/40
CPC分类号： G03F7/11 , G03F7/168
摘要： The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 Å to 600 Å, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.
摘要翻译：用于防止含有（1）C 4的铵盐，四烷基铵盐或C 1〜C 4烷醇胺盐的显影缺陷的组合物的全氟烷基羧酸，C 4〜C 10全氟烷基磺酸和全氟己二酸，或（2）氟代烷基季铵盐无机酸，其中所述表面活性剂以相对于酸与碱的比例为1:1:1:3的比例形成在直径为8英寸或更大的基材上的化学放大的光致抗蚀剂涂层上。在施加用于防止上述显影缺陷的组合物之前和/或之后烘烤化学放大的光致抗蚀剂涂层。然后，将具有显影缺陷防止组合物涂层的烘烤涂层曝光，曝光后烘烤和显影。通过该方法，与不使用用于防止显影缺陷的组合物的情况相比，显影处理后的光致抗蚀剂的膜厚减少量进一步大于100埃至600埃，并且显影缺陷在直径为8英寸以上的基板减少，并且可以形成具有良好横截面形状的抗蚀剂图案而不具有T形顶端形式等。

7. 发明申请

US20100324330A1 Process for Preventing Development Defect and Composition for Use in the Same 审中-公开
标题翻译：防止发展缺陷和组合使用的过程
公开(公告)号：US20100324330A1
公开(公告)日：2010-12-23
申请号：US12853640
申请日：2010-08-10
申请人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
发明人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
IPC分类号： C07C309/02 , C07C53/21 , C07C55/14
CPC分类号： G03F7/11 , G03F7/168
摘要： The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 Å to 600 Å, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.
摘要翻译：（1）C4〜C15全氟烷基羧酸，C4〜C10全氟烷基磺酸和全氟己二酸的铵盐，四烷基铵盐或C1〜C4链烷醇胺盐，或（2）氟化烷基季铵无机酸的盐，其中所述表面活性剂以相对于酸与碱的比例为1:1-1:3的比例形成在直径为8英寸或更大的基材上的化学放大的光致抗蚀剂涂层上。在施加用于防止上述显影缺陷的组合物之前和/或之后烘烤化学放大的光致抗蚀剂涂层。然后，将具有显影缺陷防止组合物涂层的烘烤涂层曝光，曝光后烘烤和显影。通过该方法，与不使用用于防止显影缺陷的组合物的情况相比，显影处理后的光致抗蚀剂的膜厚减少量进一步大于100埃至600埃，并且显影缺陷在直径为8英寸以上的基板减少，并且可以形成具有良好横截面形状的抗蚀剂图案而不具有T形顶端形式等。

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