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1. 发明授权

US06903645B2 Surface mounting type planar magnetic device and production method thereof 失效
标题翻译：表面安装型平面磁性装置及其制造方法
公开(公告)号：US06903645B2
公开(公告)日：2005-06-07
申请号：US10791706
申请日：2004-03-04
申请人： Tetsuhiko Mizoguchi , Tetsuo Inoue , Shigeru Yatabe , Yasutaka Fukuda , Yoshihito Tachi
发明人： Tetsuhiko Mizoguchi , Tetsuo Inoue , Shigeru Yatabe , Yasutaka Fukuda , Yoshihito Tachi
IPC分类号： H01F27/28 , H01F10/20 , H01F17/00 , H01F17/04 , H01F27/29 , H01F37/00 , H01F5/00
CPC分类号： H01F27/292 , H01F17/0006 , H01F17/04 , Y10T428/12431 , Y10T428/32
摘要： This invention provides a surface mounting type planar magnetic device comprised of upper ferrite magnetic film, lower ferrite magnetic film and a planar coil interposed therebetween. For applying surface mount technology, an opening is formed in the upper ferrite magnetic film above a coil terminal portion and then, an external electrode conductive with the coil terminal portion through the opening is formed on the upper ferrite magnetic film. Further, this surface mounting type planar magnetic device is of a thin structure and can be mounted on the surface of a printed board. Its power loss is small, its inductance is large, its frequency characteristic is excellent, the disparity of the characteristic is small and its reliability is excellent.
摘要翻译：本发明提供一种表面安装型平面磁性装置，其包括上部铁氧体磁性膜，下部铁氧体磁性膜和插入其间的平面线圈。为了施加表面贴装技术，在线圈端子部分上方的上部铁氧体磁性膜形成开口，然后在上部铁氧体磁性膜上形成有通过开口的线圈端子部分导电的外部电极。此外，这种表面安装型平面磁性装置具有薄的结构，并且可以安装在印刷电路板的表面上。其功率损耗小，电感大，频率特性优良，特性差异小，可靠性好。

2. 发明授权

US06831543B2 Surface mounting type planar magnetic device and production method thereof 失效
标题翻译：表面安装型平面磁性装置及其制造方法
公开(公告)号：US06831543B2
公开(公告)日：2004-12-14
申请号：US09790625
申请日：2001-02-23
申请人： Tetsuhiko Mizoguchi , Tetsuo Inoue , Shigeru Yatabe , Yasutaka Fukuda , Yoshihito Tachi
发明人： Tetsuhiko Mizoguchi , Tetsuo Inoue , Shigeru Yatabe , Yasutaka Fukuda , Yoshihito Tachi
IPC分类号： H01F500
CPC分类号： H01F27/292 , H01F17/0006 , H01F17/04 , Y10T428/12431 , Y10T428/32
摘要： A surface mounting type planar magnetic device comprised of upper ferrite magnetic film, lower ferrite magnetic film and a planar coil interposed therebetween. For applying surface mount technology, an opening is formed in the upper ferrite magnetic film above a coil terminal portion and then, an external electrode conductive with the coil terminal portion through the opening is formed on the upper ferrite magnetic film. Further, this surface mounting type planar magnetic device is of a thin structure and can be mounted on the surface of a printed board. Its power loss is small, its inductance is large, its frequency characteristic is excellent, the disparity of the characteristic is small and its reliability is excellent.
摘要翻译：一种表面安装型平面磁性装置，包括上部铁氧体磁性膜，下部铁氧体磁性膜和插入其间的平面线圈。为了施加表面贴装技术，在线圈端子部分上方的上部铁氧体磁性膜形成开口，然后在上部铁氧体磁性膜上形成有通过开口的线圈端子部分导电的外部电极。此外，这种表面安装型平面磁性装置具有薄的结构，并且可以安装在印刷电路板的表面上。其功率损耗小，电感大，频率特性优良，特性差异小，可靠性好。

3. 发明授权

US06383626B1 Magnetic ferrite film for magnetic devices 失效
标题翻译：用于磁性器件的磁性铁氧体膜
公开(公告)号：US06383626B1
公开(公告)日：2002-05-07
申请号：US09548344
申请日：2000-04-12
申请人： Yasutaka Fukuda , Yoshihito Tachi
发明人： Yasutaka Fukuda , Yoshihito Tachi
IPC分类号： G11B566
CPC分类号： H01F1/0027 , H01F41/16 , Y10S428/90 , Y10T428/26 , Y10T428/265
摘要： A magnetic ferrite paste is applied onto an Si substrate, and then sintered to form thereon a magnetic ferrite film having a mean composition that comprises from 40 to 50 mol % of Fe2O3, from 15 to 35 mol % of ZnO, from 0 to 20 mol % of CuO, and from 0 to 10 mol % of Bi2O3 with NiO and inevitable impurities as the balance. The magnetic ferrite film thus formed on an Si substrate is for magnetic devices, and it forms a region not containing CuO or having a CuO content of at most 5 mol % around its interface directly adjacent to the surface of the Si substrate. The adhesiveness of the magnetic ferrite film to the underlying Si substrate is high, and the reliability of the magnetic device having the magnetic film is therefore high.
摘要翻译：将磁性铁氧体浆料施加到Si基板上，然后烧结形成平均组成为Fe 2 O 3 40〜50摩尔％，ZnO为15〜35摩尔％，0〜20摩尔的磁性铁氧体膜％的CuO和0〜10mol％的Bi2O3与NiO和不可避免的杂质作为平衡。由此形成在Si基板上的磁性铁氧体膜用于磁性器件，并且在与Si衬底的表面直接相邻的界面周围形成不含有CuO或具有至多5mol％的CuO含量的区域。磁性铁氧体膜与下面的Si衬底的粘合性高，因此具有磁性膜的磁性器件的可靠性高。

4. 发明授权

US06756238B2 Domain controlled piezoelectric single crystal and fabrication method therefor 有权
标题翻译：域控压电单晶及其制造方法
公开(公告)号：US06756238B2
公开(公告)日：2004-06-29
申请号：US10246400
申请日：2002-09-19
申请人： Toshio Ogawa , Mitsuyoshi Matsushita , Yoshihito Tachi
发明人： Toshio Ogawa , Mitsuyoshi Matsushita , Yoshihito Tachi
IPC分类号： H01L2100
CPC分类号： H01L41/257 , H01L41/1875
摘要： A domain controlled piezoelectnc single crystal is disclosed which uses a lateral vibration mode for an electromechanical coupling factor k31 not less than 70% and a piezoelectric constant −d31 not less than 1200 pC/N, with an electromechanical coupling factor k33 in the longitudinal vibration mode not less than 80% and a piezoelectric constant d33 not less than 800 pC/N. Also, a piezoelectric single crystal is disclosed which uses a high-performance longitudinal vibration mode with k31 not more than 30%. A fabrication method applies a DC electric field of 400 V/mm to 1500 V/mm for a maximum of two hours in a temperature range of 20° C. to 200° C. as polarization conditions in the thickness direction of the piezoelectric single crystal. The method can include cooling, or heating and cooling between temperature boundaries of rhombohedral and tetragonal crystals or between tetragonal and cubic crystals or within a cubic crystal temperature range.
摘要翻译：公开了一种领域控制的压电单体，其使用侧向振动模式用于不小于70％的机电耦合系数k31和不小于1200pC / N的压电常数-d31，纵向振动模式中的机电耦合系数k33 不小于80％，压电常数d33不低于800pC / N。此外，公开了使用k31不高于30％的高性能纵向振动模式的压电单晶。制造方法在20℃至200℃的温度范围内将400V / mm至1500V / mm的DC电场最大化为2小时，作为压电单晶的厚度方向的极化条件。该方法可以包括在菱方体晶体和四方晶体的温度边界之间或四方晶体和立方晶体之间或在立方晶体温度范围内的冷却或加热和冷却。

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