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1. 发明申请

US20130228771A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR ITS PRODUCTION 审中-公开
标题翻译：半导体结构及其生产方法
公开(公告)号：US20130228771A1
公开(公告)日：2013-09-05
申请号：US13988392
申请日：2011-12-19
申请人： Tero Mustonen , Roger Pretot , Tomi Hassinen
发明人： Tero Mustonen , Roger Pretot , Tomi Hassinen
IPC分类号： H01L51/05
CPC分类号： H01L51/057 , C09B57/004 , C09B69/109 , H01L51/0036 , H01L51/0043 , H01L51/0508
摘要： The present invention relates to a semiconductor structure and a method for its production, the semiconductor structure comprising at least one conductor region 9 and at least two semiconductor regions (30,40), which semiconductor regions are partly separated by the at least one conductor region. The at least one conductor region comprises openings (22) extending between the semiconductor regions which are partly separated by the respective conductor region. The semiconductor regions comprise at least one organic semiconductor material having a specific HOMO energy level, in particular a DPP polymer. The conductor region comprises a conductive material having a specific work function, said combination of specific energy level and work function allowing for a simple preparation of the conductive region. The invention further relates to a method for providing such a semiconductor structure.
摘要翻译：半导体结构及其制造方法技术领域本发明涉及半导体结构及其制造方法，所述半导体结构包括至少一个导体区域9和至少两个半导体区域（30,40），所述半导体区域被所述至少一个导体区域。至少一个导体区域包括在由相应的导体区域部分分开的半导体区域之间延伸的开口（22）。半导体区域包括至少一种具有特定HOMO能级的有机半导体材料，特别是DPP聚合物。导体区域包括具有特定功函数的导电材料，比能量水平和功函数的组合允许简单地制备导电区域。本发明还涉及一种用于提供这种半导体结构的方法。

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