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1. 发明申请

US20120108077A1 SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：基板加工设备和半导体器件制造方法
公开(公告)号：US20120108077A1
公开(公告)日：2012-05-03
申请号：US13231984
申请日：2011-09-14
申请人： Yukinao KAGA , Tatsuyuki SAITO , Masanori SAKAI , Takashi YOKOGAWA
发明人： Yukinao KAGA , Tatsuyuki SAITO , Masanori SAKAI , Takashi YOKOGAWA
IPC分类号： H01L21/316 , H01L21/314 , C23C16/34 , C23C16/458 , C23C16/52 , H01L21/318 , C23C16/455
CPC分类号： C23C16/34 , C23C16/45546 , C23C16/4584 , C23C16/56 , H01L21/28556 , H01L21/28562
摘要： Disclosed is a substrate processing apparatus that includes: a substrate supporting member that supports a substrate; a processing chamber capable of housing the substrate supporting member; a rotating mechanism that rotates the substrate supporting member; a carrying mechanism that carries out the substrate supporting member from the processing chamber; a material gas supply system that supplies material gas into the processing chamber; a nitrogen-containing-gas supply system that supplies nitrogen containing gas into the processing chamber; and a controller that controls the material gas supply system, the nitrogen-containing-gas supply system, the carrying mechanism, and the rotating mechanism, after forming a nitride film on the substrate by using the material gas and the nitrogen containing gas, to carry out the substrate supporting member that supports the substrate while being rotated from the processing chamber.
摘要翻译：公开了一种基板处理装置，其包括：支撑基板的基板支撑部件; 能够容纳基板支撑构件的处理室; 使所述基板支撑部件旋转的旋转机构; 从所述处理室执行所述基板支撑构件的承载机构; 将原料气体供给到处理室内的原料气体供给系统; 含氮气体供给系统，其向所述处理室供给含氮气体; 以及通过使用原料气体和含氮气体在基板上形成氮化膜之后，控制原料气体供给系统，含氮气体供给系统，搬运机构和旋转机构的控制器，在从处理室旋转的同时支撑基板的基板支撑构件。

2. 发明申请

US20110186984A1 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：US20110186984A1
公开(公告)日：2011-08-04
申请号：US13014419
申请日：2011-01-26
申请人： Tatsuyuki SAITO , Masanori SAKAI , Yukinao KAGA , Takashi YOKOGAWA
发明人： Tatsuyuki SAITO , Masanori SAKAI , Yukinao KAGA , Takashi YOKOGAWA
IPC分类号： H01L23/482 , H01L21/00 , C23C16/455 , H01L21/3205
CPC分类号： C23C16/455 , C23C16/301 , C23C16/303 , C23C16/45578 , C23C16/52 , H01L21/00 , H01L21/02186 , H01L21/3205 , H01L23/482 , H01L2924/0002 , H01L2924/00
摘要： Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device which are able to form a conductive film, which is dense, includes a low concentration of source-derived impurities and has low resistivity, at a higher film-forming rate. The substrate processing apparatus includes a processing chamber configured to stack and accommodate a plurality of substrates; a first processing gas supply system configured to supply a first processing gas into the processing chamber; a second processing gas supply system configured to supply a second processing gas into the processing chamber; and a control unit configured to control the first processing gas supply system and the second processing gas supply system. Here, at least one of the first processing gas supply system and the second processing gas supply system includes two nozzles which are vertically arranged in a stacking direction of the substrates and have different shapes, and the control unit is configured to supply at least one of the first processing gas and the second processing gas into the processing chamber through the two nozzles having different shapes when films are formed on the substrates by supplying the first processing gas and the second processing gas into the processing chamber at pulses having different film-forming rates.
摘要翻译：本发明提供一种能够形成导电膜的基板处理装置和半导体装置的制造方法，所述半导体装置在较高的成膜速率下能够形成致密的导电膜，其包含低浓度源源杂质并具有低电阻率。基板处理装置包括：处理室，被配置为堆叠并容纳多个基板; 第一处理气体供应系统，被配置为将第一处理气体供应到所述处理室中; 第二处理气体供应系统，被配置为将第二处理气体供应到所述处理室中; 以及控制单元，被配置为控制第一处理气体供应系统和第二处理气体供应系统。这里，第一处理气体供给系统和第二处理气体供给系统中的至少一个包括沿基板的堆叠方向垂直配置的两个喷嘴，并且具有不同的形状，并且控制单元被配置为提供至少一个当通过在具有不同成膜速率的脉冲下将第一处理气体和第二处理气体供应到处理室中时，通过具有不同形状的两个喷嘴将第一处理气体和第二处理气体输送到处理室中，。

3. 发明申请

US20110183519A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：US20110183519A1
公开(公告)日：2011-07-28
申请号：US13012320
申请日：2011-01-24
申请人： Yukinao KAGA , Tatsuyuki SAITO , Masanori SAKAI , Takashi YOKOGAWA
发明人： Yukinao KAGA , Tatsuyuki SAITO , Masanori SAKAI , Takashi YOKOGAWA
IPC分类号： H01L21/3205 , C23C16/52 , C23C16/455
CPC分类号： H01L21/32051 , C23C16/34 , C23C16/45523 , C23C16/45574 , H01L21/28556 , H01L21/28562
摘要： A method of manufacturing a semiconductor device and a substrate processing apparatus capable of providing a TiN film that is higher in quality than a TiN film formed by a conventional CVD method at a higher film-forming rate, that is, with a higher productivity than a TiN film formed by an ALD method. The method includes steps of: (a) loading a substrate into a processing chamber; (b) forming a predetermined film on the substrate by simultaneously supplying the first processing gas and the second processing gas into the processing chamber; (c) stopping the supply of the first processing gas and the second processing gas and removing the first processing gas and the second processing gas remaining in the processing chamber; (d) modifying the film formed on the substrate by supplying the second processing gas into the processing chamber after the step (c); and (e) unloading the substrate from the processing chamber, wherein, in the step (b), a time period for supplying the second processing gas into the processing chamber is longer than a time period for supplying the first processing gas into the processing chamber.
摘要翻译：一种制造半导体器件的方法和基板处理设备，其能够提供比通过常规CVD方法形成的TiN膜更高成膜速率的TiN膜，其生产率高于 TiN膜通过ALD法形成。该方法包括以下步骤：（a）将衬底装载到处理室中; （b）通过同时将第一处理气体和第二处理气体供应到处理室中在基板上形成预定的膜; （c）停止供应第一处理气体和第二处理气体，并除去残留在处理室中的第一处理气体和第二处理气体; （d）在步骤（c）之后，通过将第二处理气体供应到处理室来改变在基板上形成的膜; 以及（e）从所述处理室卸载所述基板，其中在所述步骤（b）中，用于将所述第二处理气体供应到所述处理室中的时间段比用于将所述第一处理气体供应到所述处理室。

4. 发明申请

US20110031593A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法，衬底处理装置和半导体器件
公开(公告)号：US20110031593A1
公开(公告)日：2011-02-10
申请号：US12849398
申请日：2010-08-03
申请人： Tatsuyuki SAITO , Masanori SAKAI , Yukinao KAGA , Takashi Yokogawa
发明人： Tatsuyuki SAITO , Masanori SAKAI , Yukinao KAGA , Takashi Yokogawa
IPC分类号： H01L23/58 , H01L21/469 , H01L21/443
CPC分类号： H01L21/0228 , C23C16/34 , C23C16/45523 , C23C16/45544 , C23C16/45563 , C23C16/52 , H01L21/02104 , H01L21/02172 , H01L21/02225 , H01L21/02263 , H01L21/02271 , H01L21/28506
摘要： There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.
摘要翻译：提供了制造半导体器件，衬底处理设备和半导体器件的方法。该方法允许快速形成导电膜，其由于其致密的结构而具有从源极渗透的低浓度的杂质和低电阻率。该方法通过同时将两种或更多种源提供到处理室中以在放置在处理室中的基板上形成膜来执行。该方法包括：以第一供应流量将至少一种源提供到处理室中来执行第一源供应过程; 以及通过以与第一供给流量不同的第二供给流量将至少一种源提供到处理室来执行第二源供给处理。

5. 发明申请

US20110059600A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, CLEANING METHOD, AND SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20110059600A1
公开(公告)日：2011-03-10
申请号：US12862180
申请日：2010-08-24
申请人： Masanori SAKAI , Yukinao KAGA , Takashi YOKOGAWA , Tatsuyuki SAITO
发明人： Masanori SAKAI , Yukinao KAGA , Takashi YOKOGAWA , Tatsuyuki SAITO
IPC分类号： H01L21/443 , B08B5/00
CPC分类号： B08B7/00 , C23C16/4404 , C23C16/4405 , H01L21/28562 , H01L21/67028
摘要： It is possible to efficiently remove deposited materials such as a conductive film or insulting film adhered to parts such as the inner wall of a processing chamber and a substrate supporting tool disposed in the processing chamber. There is provided a method of manufacturing a semiconductor device. The method comprises: loading a substrate into a processing chamber; forming a conductive film or an insulating film on the substrate by supplying a plurality of source gases into the processing chamber; unloading the substrate from the processing chamber; and modifying a conductive film or an insulating film adhered to the processing chamber by supplying a modifying gas into the processing chamber. After performing a cycle of the loading, the forming, the unloading, and the modifying processes a plurality of times, the modified conductive film or the modified insulating film adhered to the processing chamber is removed from the processing chamber by supplying a cleaning gas into the processing chamber.

6. 发明公开

US20240133026A1 METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20240133026A1
公开(公告)日：2024-04-25
申请号：US18481715
申请日：2023-10-04
申请人： Koei KURIBAYASHI , Kento NOMURA , Yukinao KAGA
发明人： Koei KURIBAYASHI , Kento NOMURA , Yukinao KAGA
IPC分类号： C23C16/08 , H01L21/285
CPC分类号： C23C16/08 , H01L21/28568
摘要： According to one embodiment of the present disclosure, there is provided a technique that includes (a) supplying a second-metal-containing gas to a substrate including a first metal film and an insulating film to form a first film containing a second metal on the first metal film; and (b) supplying the second-metal-containing gas to the substrate to form a second film containing the second metal on the first film and the insulating film.

7. 发明申请

US20110230057A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件的方法，加工基板的方法和基板处理装置
公开(公告)号：US20110230057A1
公开(公告)日：2011-09-22
申请号：US13047367
申请日：2011-03-14
申请人： Yushin TAKASAWA , Yoshiro HIROSE , Tsukasa KAMAKURA , Yukinao KAGA
发明人： Yushin TAKASAWA , Yoshiro HIROSE , Tsukasa KAMAKURA , Yukinao KAGA
IPC分类号： H01L21/31 , C23C16/36 , C23C16/44 , C23C16/52
CPC分类号： H01L21/0228 , C23C16/36 , C23C16/45531 , H01L21/02167
摘要： An excellent type of a film is realized by modifying conventional types of films. A carbonitride film of a predetermined thickness is formed on a substrate by performing, a predetermined number of times, a cycle including the steps of: supplying a source gas into a process vessel accommodating the substrate under a condition where a CVD reaction is caused, and forming a first layer including an element on the substrate; supplying a carbon-containing gas into the process vessel to form a layer including carbon on the first layer, and forming a second layer including the element and the carbon; supplying the source gas into the process vessel under a condition where a CVD reaction is caused to additionally form a layer including the element on the second layer, and forming a third layer including the element and the carbon; and supplying a nitrogen-containing gas into the process vessel to nitride the third layer, and forming a carbonitride layer serving as a fourth layer including the element, the carbon, and nitrogen.
摘要翻译：通过改变常规类型的膜来实现优异的膜类型。通过执行预定次数的循环，在基板上形成预定厚度的碳氮化物膜，该循环包括以下步骤：在发生CVD反应的条件下将源气体供应到容纳基板的处理容器中，以及在所述基板上形成包括元件的第一层; 将含碳气体供应到所述处理容器中以在所述第一层上形成包含碳的层，以及形成包含所述元素和所述碳的第二层; 在引起CVD反应的条件下将源气体供给到处理容器中，在第二层上另外形成包含该元素的层，形成包含该元素和碳的第三层; 并向所述处理容器中供给含氮气体以氮化所述第三层，以及形成用作包含所述元素，所述碳和氮的第四层的碳氮化物层。

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