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    • 5. 发明申请
    • BROADCAST RECEIVING APPARATUS, AND BROADCAST RECEIVING METHOD
    • 广播接收设备和广播接收方法
    • US20100231809A1
    • 2010-09-16
    • US12706898
    • 2010-02-17
    • Tatsuya SUZUKI
    • Tatsuya SUZUKI
    • H04N5/50
    • H04N5/50H04N21/4345
    • A broadcast receiving apparatus includes a channel scanner that detects presence or absence of receivable services for all channels in the reception bandwidth and that creates a first service list of receivable services, a service list storage that stores a broadcast area and at least one second service list associated with the broadcast area, and a service list integrator that integrates the first service list and the second service list so as to create an integrated service list. In a case where identical services have been registered on an identical physical channel in the first service list and the second service list, the service list integrator integrates the services into one piece of service information.
    • 广播接收装置包括:频道扫描器,用于检测接收带宽中所有信道的可接收服务的存在与否;以及创建可接收服务的第一服务列表;存储广播区域的服务列表存储和至少一个第二服务列表 与服务列表集成器集成第一服务列表和第二服务列表,以便创建综合服务列表。 在相同服务已经在第一服务列表和第二服务列表中的相同物理信道上注册的情况下,服务列表积分器将服务集成到一个服务信息中。
    • 6. 发明申请
    • SIMULATION METHOD, SIMULATION APPARATUS, AND COMPUTER-READABLE STORAGE MEDIUM
    • 模拟方法,模拟装置和计算机可读存储介质
    • US20120022677A1
    • 2012-01-26
    • US13249776
    • 2011-09-30
    • Tatsuya SUZUKI
    • Tatsuya SUZUKI
    • G06F17/50G06F17/00
    • B27M1/02B27D3/00B27G1/00B27M1/08G06F17/5009
    • A simulation apparatus includes a storing unit that stores therein information about a shape of a blank piece to be cut out from raw wood, information about a final shape of a wooden piece obtained by compressing the blank piece, and image data of a surface of the blank piece. The apparatus also includes detecting unit that detects a knot appearing on the surface of the blank piece by image recognition using the image data; a shape estimating unit that estimates a shape of the detected knot using shape information on the blank piece; and a determining unit that determines, in accordance with the shape of the estimated knot, a cutting location and a cutting shape of the blank piece in such a manner that the cutting location and shape include a part and a thickness of the knot is substantially the same as that of the compressed blank piece.
    • 模拟装置包括存储单元,其存储关于从原木切出的坯件的形状的信息,关于通过压缩坯件而获得的木制件的最终形状的信息,以及关于该坯件的表面的图像数据 空白片。 该装置还包括检测单元,其通过使用图像数据的图像识别来检测出现在空白片的表面上的结; 形状估计单元,使用所述坯件上的形状信息来估计检测到的结的形状; 以及确定单元,其根据估计结的形状,以切割位置和形状包括部分的方式确定坯件的切割位置和切割形状,并且结的厚度基本上是 与压缩空白片相同。
    • 7. 发明申请
    • METHOD OF MANUFACTURING COMPRESSED WOOD PRODUCT
    • 制造压缩木制品的方法
    • US20110220245A1
    • 2011-09-15
    • US13036666
    • 2011-02-28
    • Tatsuya SUZUKI
    • Tatsuya SUZUKI
    • B27M1/08
    • B27M1/02B27H1/00
    • A method of manufacturing a compressed wood product includes cutting out a blank piece from raw wood, the blank piece having a shape in which a circularly closed marginal part makes a first plane, only one space of two spaces divided by the first plane has an undulation that includes a plurality of convex vertices, a vertex of which height from the first plane is higher is located at a position closer to a geometrical center of the circularly closed marginal part among arbitrary two vertices of the plurality of convex vertices when being viewed on a second plane that passes the two vertices and is perpendicular to the first plane, the blank piece having a volume obtained by adding an amount by which a volume of the blank piece is decreased by compression; softening the blank piece cut out; and compressing the softened blank piece in a water-vapor atmosphere having temperature and pressure higher than those of atmospheric air to deform the blank piece into a shape substantially like a bowl.
    • 制造压缩木制品的方法包括从原木切割坯件,坯件具有圆形封闭边缘部分形成第一平面的形状,仅由第一平面划分的两个空间的一个空间具有起伏 其包括多个凸顶点,其中来自第一平面的高度的顶点较高,位于在多个凸顶点的任意两个顶点中的任意两个顶点中更靠近圆形封闭边缘部分的几何中心的位置,当在 通过两个顶点并垂直于第一平面的第二平面,所述坯件具有通过加上通过压缩而使空白块的体积减小的量而获得的体积; 软化裁剪的空白片; 并且在温度和压力高于大气的水蒸汽气氛中压缩软化的坯件,以将坯件变形成基本上像碗一样的形状。
    • 8. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
    • 半导体器件及制造半导体器件的方法
    • US20110215386A1
    • 2011-09-08
    • US13039047
    • 2011-03-02
    • Tatsuya SUZUKI
    • Tatsuya SUZUKI
    • H01L29/772H01L21/283
    • H01L21/283H01L29/772
    • Unintended full siliciding of a polysilicon gate electrode is prevented.The invention provides a method of manufacturing a semiconductor device, the method including: forming a stack structure by stacking a gate insulating film and a silicon layer in this order on a substrate; forming an offset spacer along the side surfaces of the stack structure, the offset spacer including a SiN film; cleaning an exposed region of an upper surface of the silicon layer with a chemical solution after the forming the offset spacer; forming a metal film after the cleaning, the metal film covering at least the exposed region; and performing siliciding through a heating process after the forming the metal film. The SiN film of the offset spacer is a SiN film formed by ALD at 450° C. equal to or higher, or a SiN film having a tensile/compressive stress of 1 Gpa or higher. The chemical solution is DHF having a ratio by weight of 1/100 or higher in HF/H2O or buffered hydrofluoric acid.
    • 防止了多晶硅栅电极的非预期全硅化。 本发明提供一种制造半导体器件的方法,该方法包括:通过在衬底上依次层叠栅极绝缘膜和硅层来形成堆叠结构; 沿所述堆叠结构的侧表面形成偏移间隔物,所述偏移间隔物包括SiN膜; 在形成偏移间隔物之后,用化学溶液清洗硅层的上表面的暴露区域; 在清洁之后形成金属膜,金属膜至少覆盖曝光区域; 并且在形成金属膜之后通过加热工艺进行硅化。 偏移间隔物的SiN膜是由等于或等于450℃的ALD形成的SiN膜,或拉伸/压缩应力为1Gpa以上的SiN膜。 化学溶液是在HF / H 2 O或缓冲氢氟酸中重量比为1/100或更高的DHF。
    • 10. 发明申请
    • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    • 制造半导体器件的方法
    • US20080206947A1
    • 2008-08-28
    • US11859573
    • 2007-09-21
    • Tatsuya SUZUKI
    • Tatsuya SUZUKI
    • H01L21/336H01L21/283H01L21/306
    • H01L29/6659H01L21/28035H01L29/4916H01L29/665H01L29/6653H01L29/66636
    • A method of manufacturing the semiconductor device is provided, which provides a prevention for a “dug” of a silicon substrate caused by the etching in regions except a region for forming a film during a removal of the film with a chemical solution. A method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming a first silicon oxide film on a surface of a silicon substrate or on a surface of a gate electrode when a silicon nitride film for a dummy side wall is etched off, to provide a protection for such surfaces, and then etching a portion of the silicon nitride film with a chemical solution, and then a second oxide film for supplementing a simultaneously-etched portion of the first silicon oxide film is formed, and eventually performing an etching for completely removing the silicon nitride film for the dummy side wall.
    • 提供一种制造半导体器件的方法,其提供了防止在用化学溶液去除膜期间除了用于形成膜的区域之外的区域中的蚀刻引起的硅衬底的“挖”。 根据本发明实施例的制造半导体器件的方法包括:当蚀刻掉用于虚拟侧壁的氮化硅膜时,在硅衬底的表面上或栅电极的表面上形成第一氧化硅膜 为了提供对这些表面的保护,然后用化学溶液蚀刻一部分氮化硅膜,然后形成用于补充第一氧化硅膜的同时蚀刻部分的第二氧化物膜,并且最终执行 用于完全去除用于虚拟侧壁的氮化硅膜的蚀刻。