专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06359639B1 Thermal head driving integrated circuit 有权
标题翻译：热敏头驱动集成电路
公开(公告)号：US06359639B1
公开(公告)日：2002-03-19
申请号：US09428901
申请日：1999-10-28
申请人： Tatsuya Kitta , Yoshihide Kanakubo , Yasuhiro Moya , Kazutoshi Ishii , Sumitaka Gotou
发明人： Tatsuya Kitta , Yoshihide Kanakubo , Yasuhiro Moya , Kazutoshi Ishii , Sumitaka Gotou
IPC分类号： B41J2345
CPC分类号： B41J2/355
摘要： A thermal head driving integrated circuit capable of preventing the lowering of data transfer speed, and in which the number of bonding pads can be reduced as well as current consumption has a driver circuit in which at least two shift registers are series-arranged in front and rear stages to sequentially transfer print data in a serial signal manner to be read out in a batch mode to drive a plurality of heating resistive elements. A switch circuit is interposed between an output terminal of the front-staged shift register and an input terminal of the rear-staged shift register to selectively connect and disconnect the two shift registers.
摘要翻译：能够防止数据传送速度降低的热敏头驱动集成电路，其中可以减少接合焊盘的数量以及电流消耗，具有驱动电路，其中至少两个移位寄存器串联排列在前面，后级以串行信号方式顺序传送打印数据，以便以分批模式读出以驱动多个加热电阻元件。开关电路插在前级移位寄存器的输出端子和后级移位寄存器的输入端子之间，以选择性地连接和断开两个移位寄存器。

2. 发明授权

US6107128A Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US6107128A
公开(公告)日：2000-08-22
申请号：US324693
申请日：1999-06-02
申请人： Kazutoshi Ishii , Sumitaka Gotou , Yasuhiro Moya , Tatsuya Kitta , Yoshihide Kanakubo
发明人： Kazutoshi Ishii , Sumitaka Gotou , Yasuhiro Moya , Tatsuya Kitta , Yoshihide Kanakubo
IPC分类号： H01L29/78 , H01L21/8238 , H01L27/092
CPC分类号： H01L27/0925 , H01L21/823857
摘要： Since a field effect MOS transistor can be formed with a reduced number of manufacturing processes, a semiconductor integrated circuit device can be materialized at a low cost. A semiconductor device has a structure in which a gate electrode is provided in the vicinity of the surface of a semiconductor substrate through a gate insulating film, a second conductive type heavily doped impurity region is provided in a region adjacent to a part of the gate electrode through a part of the gate insulating film and a part of a thick oxide film, another second conductive type heavily doped impurity region is provided in a region adjacent to an opposite part of the gate electrode opposing the part of the gate electrode through the part of the gate insulating film and a part of another thick oxide film, and a first conductive type heavily doped impurity region for device isolation is provided so as to surround the gate electrode and the second conductive type heavily doped impurity regions.
摘要翻译：由于能够以较少数量的制造工艺形成场效应MOS晶体管，所以能够以低成本实现半导体集成电路器件。半导体器件具有其中通过栅极绝缘膜在半导体衬底的表面附近设置栅电极的结构，在与栅电极的一部分相邻的区域中设置第二导电型重掺杂杂质区通过栅极绝缘膜的一部分和厚氧化物膜的一部分，另一个第二导电型重掺杂杂质区设置在与栅电极的与栅电极的一部分相对的相对部分附近的区域中，设置栅绝缘膜和另一厚氧化膜的一部分，以及用于器件隔离的第一导电型重掺杂杂质区域，以围绕栅电极和第二导电型重掺杂杂质区。

3. 发明授权

US6134136A Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US6134136A
公开(公告)日：2000-10-17
申请号：US236896
申请日：1999-01-26
申请人： Kazutoshi Ishii , Sumitaka Gotou , Yasuhiro Moya , Yoshihide Kanakubo , Tatuya Kitta
发明人： Kazutoshi Ishii , Sumitaka Gotou , Yasuhiro Moya , Yoshihide Kanakubo , Tatuya Kitta
IPC分类号： B41J2/345 , G11C5/00 , H01L21/822 , H01L27/04 , G11C5/02
CPC分类号： G09G3/3685 , B41J2/3359 , G09G2330/04 , H01L2924/0002
摘要： Reducing the chip area while improving the manufacturing efficiency as well as reducing costs in a semiconductor integrated circuit device such as a thermal head driver IC. A plurality of terminal electrodes were provided within an external data input/output circuit with an input terminal and output terminal being electrically connected to each other. In addition, an input/output protection circuit was provided to a respective one of such plurality of terminal electrodes with the input terminal and output terminal electrically connected together.
摘要翻译：在提高制造效率的同时降低芯片面积并降低诸如热敏头驱动器IC的半导体集成电路器件的成本。多个端子电极设置在外部数据输入/输出电路内，输入端子和输出端子彼此电连接。此外，输入/输出保护电路被提供给这些多个端子电极中的相应一个，输入端子和输出端子电连接在一起。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式