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1. 发明授权

US5739552A Semiconductor light emitting diode producing visible light 失效
标题翻译：半导体发光二极管产生可见光
公开(公告)号：US5739552A
公开(公告)日：1998-04-14
申请号：US547315
申请日：1995-10-24
申请人： Tatsuya Kimura , Zempei Kawazu
发明人： Tatsuya Kimura , Zempei Kawazu
IPC分类号： H01L25/075 , H01L27/15 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/00
CPC分类号： H01L33/20 , H01L25/0756 , H01L27/15 , H01L2924/0002 , H01L33/08 , H01L33/24
摘要： A method of fabricating a light emitting diode (LED) device producing visible light includes growing layers of an LED emitting blue light to form a blue LED; growing layers of an LED emitting green light to form a green LED; growing layers of an LED emitting red light to form a red LED; and uniting the three LEDs directly to each other by annealing. Therefore, an LED device that can emit light of all three colors from the same region of the LED device with variable light intensity is obtained.
摘要翻译：制造产生可见光的发光二极管（LED）器件的方法包括发射蓝光的LED的生长层以形成蓝色LED; 发展绿色LED的LED的生长层以形成绿色LED; 生长层的LED发出红光以形成红色LED; 并通过退火将三个LED直接连接在一起。因此，可以获得能够从具有可变光强度的LED装置的相同区域发射全部三种颜色的LED的LED装置。

2. 发明授权

US5539239A Semiconductor light emitting element with II-VI and III-V compounds 失效
标题翻译：具有II-VI和III-V化合物的半导体发光元件
公开(公告)号：US5539239A
公开(公告)日：1996-07-23
申请号：US390586
申请日：1995-02-17
申请人： Zempei Kawazu , Tatsuya Kimura
发明人： Zempei Kawazu , Tatsuya Kimura
IPC分类号： G11B7/125 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/28 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/327 , H01L33/00
CPC分类号： H01L33/26 , H01L33/0087 , H01S5/327
摘要： A semiconductor light emitting element includes a wide band gap energy II-VI semiconductor layer on a p type III-V semiconductor substrate and a III-V semiconductor buffer layer between the semiconductor substrate and the wide band gap energy II-VI semiconductor layer having a band gap energy intermediate those of the semiconductor substrate and the wide band gap energy II-VI semiconductor layer. Energy spikes in the valence band of the element are reduced and the injection efficiency of holes is increased so that a semiconductor light emitting element having a low operation voltage is produced.
摘要翻译：半导体发光元件包括在III型-V半导体衬底上的宽带隙能量II-VI半导体层和在半导体衬底和具有带状的宽带隙能量II-VI半导体层之间的III-V半导体缓冲层间隙能量与半导体衬底和宽带隙能量II-VI半导体层的间隙能量相反。元件的价带中的能量尖峰降低，并且空穴的注入效率增加，从而产生具有低工作电压的半导体发光元件。

3. 发明授权

US5582647A Material supplying apparatus 失效
标题翻译：供料装置
公开(公告)号：US5582647A
公开(公告)日：1996-12-10
申请号：US358465
申请日：1994-12-19
申请人： Manabu Kato , Takashi Motoda , Tatsuya Kimura , Kaoru Kadoiwa , Zempei Kawazu , Nariaki Fujii
发明人： Manabu Kato , Takashi Motoda , Tatsuya Kimura , Kaoru Kadoiwa , Zempei Kawazu , Nariaki Fujii
IPC分类号： C23C16/44 , C23C16/448 , C23C16/52 , H01L21/205 , A01K15/04
CPC分类号： C23C16/4482 , C23C16/52
摘要： A material supplying apparatus includes a container for storing a solution; an inlet pipe for introducing a carrier gas and an outlet pipe; electrodes disposed in the container over the depth direction of the container and forming a capacitor; and apparatus for calculating a residual amount of the solution in the container from the capacitance of the capacitor formed by the electrodes. The solution is used as the dielectric of the capacitor formed in the container and the capacitance varies according to the quantity of solution so that the residual amount of the solution and the time to replenish the solution are calculated in a simple structure having no moving parts.
摘要翻译：材料供给装置包括用于储存溶液的容器; 用于引入载气和出口管的入口管; 在容器的深度方向上设置在容器中并形成电容器的电极; 以及根据由电极形成的电容器的电容计算容器中的溶液残留量的装置。该溶液用作形成在容器中的电容器的电介质，并且电容根据溶液量而变化，使得溶液的剩余量和补充溶液的时间以不具有移动部件的简单结构计算。

4. 发明申请

US20080048352A1 Method for manufacturing extruded polystyrene resin foam 审中-公开
标题翻译：挤出聚苯乙烯树脂发泡体的制造方法
公开(公告)号：US20080048352A1
公开(公告)日：2008-02-28
申请号：US11976233
申请日：2007-10-23
申请人： Hisao Nakamura , Yoshihiko Kanda , Tatsuya Kimura
发明人： Hisao Nakamura , Yoshihiko Kanda , Tatsuya Kimura
IPC分类号： C08J9/14
CPC分类号： C08J9/143 , B29C48/022 , B29C48/07 , B29K2025/00 , B29K2105/04 , C08J9/141 , C08J2201/03 , C08J2325/06
摘要： A method to manufacture an extruded polystyrene resin foam includes the steps for heating and mixing a nucleating agent, a fire retardant, a polystyrene resin and a physical blowing agent except chlorofluorohydrocarbons together within an extruder to prepare a polystyrene resin melt; introducing the resin melt to a die having a cooling member therein and constructed so that a molten resin flow channel within the die is broad in a vertical direction but narrows abruptly near a die orifice ;and discharging the polystyrene resin melt from the die orifice into a guider attached to a top of the die and causing it to expand within the guider. The extruded foam has an apparent density of 0.015 to 0.06 g/cm3.
摘要翻译：制造挤出聚苯乙烯树脂发泡体的方法包括在挤出机内将成核剂，阻燃剂，聚苯乙烯树脂和除了氟氯烃外的物理发泡剂加热混合以制备聚苯乙烯树脂熔融物的步骤; 将树脂熔体引入到其中具有冷却构件的模具中，并且构造成使得模具内的熔融树脂流动通道在垂直方向上宽，但在模孔附近突然变窄;并且将聚苯乙烯树脂熔体从模孔排出到导杆附着在模具的顶部并使其在导向器内扩展。挤出的泡沫体的表观密度为0.015至0.06g / cm 3。

5. 发明授权

US5912475A Optical semiconductor device with InP 失效
标题翻译：带InP的光学半导体器件
公开(公告)号：US5912475A
公开(公告)日：1999-06-15
申请号：US767924
申请日：1996-12-17
申请人： Takushi Itagaki , Daisuke Suzuki , Tatsuya Kimura
发明人： Takushi Itagaki , Daisuke Suzuki , Tatsuya Kimura
IPC分类号： G02F1/025 , H01S5/00 , H01S5/0625 , H01L33/00
CPC分类号： H01S5/06258
摘要： An optical semiconductor device includes an n-type InP substrate having top and bottom surfaces; a stripe-shaped mesa structure including an n-type cladding layer, a multi quantum well layer, and a p-type first upper cladding layer disposed on the top surface of the substrate; a first layer of a semi-insulating material, an n-type InP hole blocking layer having a carrier concentration equal to or less than 4.times.10.sup.18 cm.sup.-3 and more than 1.times.10.sup.18 cm.sup.-3, and a second layer of the semi-insulating material disposed burying the mesa structure; a second p-type cladding layer and a p-type contact layer disposed on the mesa structure and on the second layer of the semi-insulating material, and p side electrodes spaced from each other in a stripe direction of the mesa structure, disposed on the p-type contact layer; and an n side electrode disposed on the bottom surface of the substrate. Therefore, an optical semiconductor device is available which has superior element isolation characteristics and broad modulation bandwidth, and enables the individual elements to operate with the utmost performance.
摘要翻译：光学半导体器件包括具有顶表面和底表面的n型InP衬底; 包括n型包覆层，多量子阱层和设置在衬底的顶表面上的p型第一上包层的条状台面结构; 半绝缘材料的第一层，载流子浓度等于或小于4×10 18 cm -3且大于1×10 18 cm -3的n型InP空穴阻挡层和设置在所述半绝缘材料上的第二层埋葬台面结构; 设置在半绝缘材料的台面结构和第二层上的第二p型覆层和p型接触层，以及在台面结构的条带方向上彼此隔开的p侧电极，设置在 p型接触层; 以及设置在基板的底面上的n侧电极。因此，可获得具有优异的元件隔离特性和宽调制带宽的光学半导体器件，并且能够使各个元件以最大的性能进行操作。

6. 发明授权

US5166082A BIMOS transistor devices having bipolar and MOS transistors formed in substrate thereof and process for the fabrication of the same 失效
标题翻译： BIMOS晶体管器件具有在其衬底中形成的双极型MOS晶体管和MOS晶体管，其制造方法
公开(公告)号：US5166082A
公开(公告)日：1992-11-24
申请号：US712713
申请日：1991-06-10
申请人： Takaharu Nakamura , Toshikazu Kuroda , Tatsuya Kimura
发明人： Takaharu Nakamura , Toshikazu Kuroda , Tatsuya Kimura
IPC分类号： H01L29/73 , H01L21/331 , H01L21/761 , H01L21/762 , H01L21/8249 , H01L27/06 , H01L29/732
CPC分类号： H01L21/8249 , H01L21/761 , H01L21/76221 , H01L27/0623 , Y10S148/008 , Y10S148/009
摘要： This invention provides devices each of which has at least one bipolar transistor and at least one MOS transistor, both formed on a substrate. This invention also provides their fabrication process. Each device is constructed of epitaxial layers of a first and second conductivity types, surfaces of said epitaxial layers being partly exposed, at least one MOS transistor formed in the epitaxial layer of the first conductivity type, and at least one bipolar transistor formed in the epitaxial layer of the second conductivity type. Its fabrication process comprises the steps of forming the epitaxial layer of the second conductivity type on the semiconductor substrate, forming the epitaxial layer of the first conductivity type on a part of the epitaxial layer of the second conductivity type, forming the bipolar transistor in the epitaxial layer of the second conductivity type and then forming the MOS transistor in the epitaxial layer of the first conductivity type.
摘要翻译：本发明提供了各自具有形成在基板上的至少一个双极晶体管和至少一个MOS晶体管的器件。本发明还提供了它们的制造方法。每个器件由第一和第二导电类型的外延层构成，所述外延层的表面部分暴露，形成在第一导电类型的外延层中的至少一个MOS晶体管和形成在外延层中的至少一个双极晶体管第二导电类型的层。其制造方法包括以下步骤：在半导体衬底上形成第二导电类型的外延层，在第二导电类型的外延层的一部分上形成第一导电类型的外延层，在外延层中形成双极晶体管层，然后在第一导电类型的外延层中形成MOS晶体管。

7. 发明授权

US4204745A Optical fiber 失效
标题翻译：光纤
公开(公告)号：US4204745A
公开(公告)日：1980-05-27
申请号：US914548
申请日：1978-06-12
申请人： Junichi Sakai , Tatsuya Kimura
发明人： Junichi Sakai , Tatsuya Kimura
IPC分类号： G02B6/00 , C03B37/018 , G02B6/028 , G02B5/14
CPC分类号： G02B6/0288 , C03B37/018 , C03B2203/26
摘要： In a graded index optical fiber whose refractive index distribution (n) at the radial length r is given by ##EQU1## where (n.sub.0) is the refractive index at the core axis, (a) is the core radius, .alpha. is a power exponent, n.sub.e is the refractive index of the cladding, and .DELTA.=(n.sub.0 -n.sub.e)/n.sub.0, said exponent .alpha. and the normalized frequency v (=(2.pi.an.sub.0 /.lambda.).sqroot.2.DELTA., .lambda. is the wavelength) are determined so that the group delay of the fundamental mode is equal to that of the first higher order mode. In particular, the value of .alpha. is determined in the range 3.2.ltoreq..alpha..ltoreq.6.0. Thus, the optical fiber with both a broad bandwidth and a large core diameter can be provided. A large core diameter optical fiber facilitates the connection or the splicing of two optical fibers.
摘要翻译：在径向长度为r的折射率分布（n）由给出的渐变折射率光纤中，其中（n0）是芯轴处的折射率，（a）是芯径，α是幂指数，ne是包层的折射率，并且DELTA =（n0-ne）/ n0，所述指数α和归一化频率v（=（2 pi an0 /λ）2ROOT 2 DELTA，λ是波长）被确定为基本模式的组延迟等于第一个高阶模式的组延迟。特别地，α的值在3.2≤3.0范围内确定。因此，可以提供宽带宽和大直径的光纤。大的芯径光纤有助于两根光纤的连接或拼接。

8. 发明授权

US4142200A Semiconductor photodiodes 失效
标题翻译：半导体光电二极管
公开(公告)号：US4142200A
公开(公告)日：1979-02-27
申请号：US734182
申请日：1976-10-20
申请人： Yoshihiko Mizushima , Kenji Kajiyama , Tatsuya Kimura , Hiroshi Kanbe
发明人： Yoshihiko Mizushima , Kenji Kajiyama , Tatsuya Kimura , Hiroshi Kanbe
IPC分类号： H01L31/107 , H01L27/14
CPC分类号： H01L31/107
摘要： The impurity concentration distribution of the layers of a multilayer junction diode is varied such that the concentration in a first region contiguous to the junction is low, in a second region is high, in a third region is low and in a last region gradually increases in the direction away from the junction.
摘要翻译：改变多层结二极管的层的杂质浓度分布，使得在第二区域中与第一区域邻接的第一区域中的浓度较低，第三区域中的浓度较低，并且最后区域中的浓度分布逐渐增加远离交界处的方向。

9. 发明授权

US08220249B2 Rocket nozzle and control method for combustion gas flow in rocket engine 有权
标题翻译：火箭发动机燃烧气体流量的火箭喷嘴和控制方法
公开(公告)号：US08220249B2
公开(公告)日：2012-07-17
申请号：US12200265
申请日：2008-08-28
申请人： Tatsuya Kimura , Yoshihiro Kawamata , Kenichi Niu
发明人： Tatsuya Kimura , Yoshihiro Kawamata , Kenichi Niu
IPC分类号： B64G1/40
CPC分类号： F02K1/38 , F02K9/48 , F02K9/58 , F02K9/82 , F02K9/972 , F05D2250/713
摘要： A rocket nozzle includes a dual-bell nozzle and a gas introducing section configured to introduce gas into space surrounded by the dual-bell nozzle. Combustion gas flows in the space. The dual-bell nozzle includes a first stage nozzle bell-shaped and surrounding an upstream portion of the space, and a second stage nozzle bell-shaped and surrounding a downstream portion of the space. The dual-bell nozzle has an inflection point between the first stage nozzle and the second stage nozzle. The gas introducing section includes a gas inlet provided to an inner wall surface of the first stage nozzle. The gas is introduced into the space from the gas inlet.
摘要翻译：火箭喷嘴包括双钟形喷嘴和构造成将气体引入由双钟形喷嘴包围的空间中的气体导入部。燃烧气体在空间中流动。双钟形喷嘴包括钟形状的第一级喷嘴并且围绕该空间的上游部分，以及第二级喷嘴钟形并围绕该空间的下游部分。双钟形喷嘴在第一级喷嘴和第二级喷嘴之间具有拐点。气体导入部包括设置在第一级喷嘴的内壁面的气体入口。气体从气体入口引入空间。

10. 发明授权

US07072835B2 Method and apparatus for speech recognition 有权
公开(公告)号：US07072835B2
公开(公告)日：2006-07-04
申请号：US10052145
申请日：2002-01-17
申请人： Tomohiro Konuma , Tsuyoshi Inoue , Mitsuru Endo , Natsuki Saito , Akira Ishida , Tatsuya Kimura
发明人： Tomohiro Konuma , Tsuyoshi Inoue , Mitsuru Endo , Natsuki Saito , Akira Ishida , Tatsuya Kimura
IPC分类号： G10L15/04
CPC分类号： G10L15/065 , G10L15/08 , G10L15/1815 , G10L2015/088
摘要： A method and apparatus for speech recognition of the present application has a process to collate, with an input utterance, an acoustic model corresponding to a hypothesis to be expressed by the connection of utterance segments, such as phonemes or syllables, and developed according to a length of an input utterance by an inter-word connection rule thereby obtaining a recognition score. Within a word of the hypothesis, the similar hypotheses high in utterance score within a predetermined threshold from the maximum value of the score are all held to a word end irrespectively of the number of hypotheses. Meanwhile, at a word end of the hypotheses, the hypotheses are narrowed to a predetermined number of upper ranking in the order of higher score.

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