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1. 发明申请

US20110171755A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE HAVING MEMORY ELEMENT WITH PROTECTIVE FILM 有权
标题翻译：具有保护膜的记忆元件的半导体器件的制造方法
公开(公告)号：US20110171755A1
公开(公告)日：2011-07-14
申请号：US13069982
申请日：2011-03-23
申请人： Tatsunori MURATA , Mikio Tsujiuchi , Ryoji Matsuda
发明人： Tatsunori MURATA , Mikio Tsujiuchi , Ryoji Matsuda
IPC分类号： H01L21/02
CPC分类号： H01L27/228 , G11C11/16
摘要： To provide a manufacturing method of a semiconductor device capable of forming, as a protective film of an MTJ element, a silicon nitride film having good insulation properties without deteriorating the properties of the MTJ element. The method of the invention includes steps of forming a silicon nitride film over the entire surface including an MTJ element portion (MTJ element and an upper electrode) while using a parallel plate plasma CVD apparatus as a film forming apparatus and a film forming gas not containing NH3 but composed of SiH4/N2/helium (He). The film forming temperature is set at from 200 to 350° C. More ideally, a flow rate ratio of He to SiH4 is set at from 100 to 125.
摘要翻译：为了提供能够形成具有良好绝缘性能的氮化硅膜作为MTJ元件的保护膜的半导体器件的制造方法，而不会劣化MTJ元件的性能。本发明的方法包括以下步骤：在使用平板等离子体CVD装置作为成膜装置的同时，在包括MTJ元件部分（MTJ元件和上电极）的整个表面上形成氮化硅膜，以及不含 NH3，但由SiH4 / N2 /氦（He）组成。成膜温度设定在200〜350℃。更理想的是，将He与SiH4的流量比设定为100〜125。

2. 发明申请

US20090269860A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20090269860A1
公开(公告)日：2009-10-29
申请号：US12411665
申请日：2009-03-26
申请人： Tatsunori MURATA , Mikio Tsujiuchi , Ryoji Matsuda
发明人： Tatsunori MURATA , Mikio Tsujiuchi , Ryoji Matsuda
IPC分类号： H01L43/12
CPC分类号： H01L27/228 , G11C11/16
摘要： To provide a manufacturing method of a semiconductor device capable of forming, as a protective film of an MTJ element, a silicon nitride film having good insulation properties without deteriorating the properties of the MTJ element. The method of the invention includes steps of forming a silicon nitride film over the entire surface including an MTJ element portion (MTJ element and an upper electrode) while using a parallel plate plasma CVD apparatus as a film forming apparatus and a film forming gas not containing NH3 but composed of SiH4/N2/helium (He). The film forming temperature is set at from 200 to 350° C. More ideally, a flow rate ratio of He to SiH4 is set at from 100 to 125.
摘要翻译：为了提供能够形成具有良好绝缘性能的氮化硅膜作为MTJ元件的保护膜的半导体器件的制造方法，而不会劣化MTJ元件的性质。本发明的方法包括以下步骤：在使用平板等离子体CVD装置作为成膜装置的同时，在包括MTJ元件部分（MTJ元件和上电极）的整个表面上形成氮化硅膜，以及不含 NH3，但由SiH4 / N2 /氦（He）组成。成膜温度设定在200〜350℃。更理想的是，将He与SiH4的流量比设定为100〜125。

3. 发明申请

US20100270634A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100270634A1
公开(公告)日：2010-10-28
申请号：US12832505
申请日：2010-07-08
申请人： Tatsunori MURATA , Mikio Tsujiuchi
发明人： Tatsunori MURATA , Mikio Tsujiuchi
IPC分类号： H01L29/82
CPC分类号： H01L27/224 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F41/302 , H01F41/307 , H01L43/08 , H01L43/12
摘要： The present invention makes it possible to obtain: a semiconductor device capable of forming a highly reliable upper wire without a harmful influence on the properties of the magnetic material for an MTJ device; and the manufacturing method thereof. Plasma treatment is applied with reducible NH3 or H2 as pretreatment. Thereafter, a tensile stress silicon nitride film to impose tensile stress on an MTJ device is formed over a clad layer and over an interlayer dielectric film where the clad layer is not formed. Successively, a compressive stress silicon nitride film to impose compressive stress on the MTJ device is formed over the tensile stress silicon nitride film. The conditions for forming the tensile stress silicon nitride film and the compressive stress silicon nitride film are as follows: a parallel plate type plasma CVD apparatus is used; the RF power is set in the range of 0.03 to 0.4 W/cm2; and the film forming temperature is set in the range of 200° C. to 350° C.
摘要翻译：本发明使得可以获得：能够形成高可靠性上线的半导体器件，而对MTJ器件的磁性材料的性能没有有害影响; 及其制造方法。使用可还原NH3或H2作为预处理进行等离子体处理。此后，在覆层和覆盖层未形成的层间电介质膜上形成在MTJ器件上施加拉伸应力的拉伸应力氮化硅膜。接着，在拉伸应力氮化硅膜上形成在MTJ装置上施加压应力的压应力氮化硅膜。用于形成拉伸应力氮化硅膜和压缩应力氮化硅膜的条件如下：使用平行板型等离子体CVD装置; RF功率设定在0.03〜0.4W / cm 2的范围内; 成膜温度设定在200〜350℃的范围。

4. 发明申请

US20090294881A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090294881A1
公开(公告)日：2009-12-03
申请号：US12424982
申请日：2009-04-16
申请人： Tatsunori MURATA , Mikio Tsujiuchi
发明人： Tatsunori MURATA , Mikio Tsujiuchi
IPC分类号： H01L29/82 , H01L43/12
CPC分类号： H01L27/224 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F41/302 , H01F41/307 , H01L43/08 , H01L43/12
摘要： The present invention makes it possible to obtain: a semiconductor device capable of forming a highly reliable upper wire without a harmful influence on the properties of the magnetic material for an MTJ device; and the manufacturing method thereof. Plasma treatment is applied with reducible NH3 or H2 as pretreatment. Thereafter, a tensile stress silicon nitride film to impose tensile stress on an MTJ device is formed over a clad layer and over an interlayer dielectric film where the clad layer is not formed. Successively, a compressive stress silicon nitride film to impose compressive stress on the MTJ device is formed over the tensile stress silicon nitride film. The conditions for forming the tensile stress silicon nitride film and the compressive stress silicon nitride film are as follows: a parallel plate type plasma CVD apparatus is used; the RF power is set in the range of 0.03 to 0.4 W/cm2; and the film forming temperature is set in the range of 200° C. to 350° C.
摘要翻译：本发明使得可以获得：能够形成高可靠性的上线而不会对MTJ装置的磁性材料的性质产生有害影响的半导体器件; 及其制造方法。使用可还原NH3或H2作为预处理进行等离子体处理。此后，在覆层和覆盖层未形成的层间电介质膜上形成在MTJ器件上施加拉伸应力的拉伸应力氮化硅膜。接着，在拉伸应力氮化硅膜上形成在MTJ装置上施加压应力的压应力氮化硅膜。用于形成拉伸应力氮化硅膜和压缩应力氮化硅膜的条件如下：使用平行板型等离子体CVD装置; RF功率设定在0.03〜0.4W / cm 2的范围内; 成膜温度设定在200〜350℃的范围。

5. 发明申请

US20080014760A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080014760A1
公开(公告)日：2008-01-17
申请号：US11765703
申请日：2007-06-20
申请人： Tatsunori MURATA , Koyu Asai , Hiroaki Iuchi
发明人： Tatsunori MURATA , Koyu Asai , Hiroaki Iuchi
IPC分类号： H01L21/469 , H01L29/788
CPC分类号： H01L27/115 , H01L21/28273 , H01L21/7682 , H01L21/76834 , H01L27/11521 , H01L27/14627 , H01L27/14632 , H01L27/14643 , H01L27/14689 , H01L29/42324
摘要： When microfabrication is done, a reliable semiconductor device is offered.A semiconductor device has a semiconductor substrate which has a main front surface, a plurality of convex patterns formed on the main front surface of a semiconductor substrate so that each might have a floating gate and a control gate, a first insulating film formed so that the upper surface and the side surface of each of a plurality of convex patterns might be covered, and so that width might become large rather than the portion which covers the lower part side surface of a convex pattern in the portion which covers an upper part side surface, and a second insulating film that covers the upper surface and the side surface of the first insulating film so that the cavity between the adjacent convex patterns may be occluded. The position occluded by the second insulating film of a cavity is a position higher than the upper surface of a floating gate, and is a position lower than the upper surface of a control gate.
摘要翻译：当进行微细加工时，提供可靠的半导体器件。半导体器件具有半导体衬底，该半导体衬底具有主前表面，多个凸形图案形成在半导体衬底的主表面上，以便可以具有浮置栅极和控制栅极，第一绝缘膜形成为使得可以覆盖多个凸形图案中的每一个的上表面和侧表面，并且使得宽度可能变大，而不是覆盖覆盖上部侧表面的部分中的凸形图案的下部侧表面的部分以及覆盖第一绝缘膜的上表面和侧表面的第二绝缘膜，使得相邻凸形图案之间的空腔可能被遮挡。由空腔的第二绝缘膜封闭的位置是比浮动栅极的上表面高的位置，并且是比控制栅极的上表面低的位置。

6. 发明申请

US20110003445A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20110003445A1
公开(公告)日：2011-01-06
申请号：US12827125
申请日：2010-06-30
申请人： Tatsunori MURATA , Yoshihiro Miyagawa
发明人： Tatsunori MURATA , Yoshihiro Miyagawa
IPC分类号： H01L21/8238
CPC分类号： H01L21/28247 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/823807 , H01L21/823864 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： A manufacturing method of a semiconductor device is provided which can uniformly form a good and thin silicon oxide film or the like at a relatively low temperature. In step 1, a semiconductor substrate is exposed to monosilane (SiH4). Then, in step 2, the remaining monosilane (SiH4) is emitted. In step 3, the semiconductor substrate is exposed to nitrous oxide plasma. A desired silicon oxide film is formed by repeating one cycle including steps 1 to 3 until a necessary thickness of the film is obtained.
摘要翻译：提供半导体器件的制造方法，其可以在相对低的温度下均匀地形成良好和薄的氧化硅膜等。在步骤1中，将半导体衬底暴露于单硅烷（SiH 4）。然后，在步骤2中，发射剩余的甲硅烷（SiH 4）。在步骤3中，将半导体衬底暴露于一氧化二氮等离子体。通过重复包括步骤1至3的一个循环来形成期望的氧化硅膜，直到获得所需的膜厚度。

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