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1. 发明授权

US07365037B2 Quartz glass having excellent resistance against plasma corrosion and method for producing the same 有权
标题翻译：具有优异的等离子体腐蚀性的石英玻璃及其制造方法
公开(公告)号：US07365037B2
公开(公告)日：2008-04-29
申请号：US11076944
申请日：2005-03-11
申请人： Tatsuhiro Sato , Nobumasa Yoshida , Mamoru Endo
发明人： Tatsuhiro Sato , Nobumasa Yoshida , Mamoru Endo
IPC分类号： C03C3/04 , C03C3/095 , C03B20/00
CPC分类号： C03C3/06 , C03B19/01 , C03B19/06 , C03B19/066 , C03B19/09 , C03B19/1438 , C03B19/1453 , C03B20/00 , C03B2201/36 , C03C2201/36 , C03C2203/10 , C03C2203/22 , C03C2203/40
摘要： As a jig material to use under plasma reaction for producing semiconductors the present invention provides a quartz glass having resistance against plasma corrosion, particularly corrosion resistance against fluorine-based plasma gases, and which is usable without causing anomalies to silicon wafers; the present invention furthermore provides a quartz glass jig, and a method for producing the same. A quartz glass containing 0.1 to 20 wt % in total of two or more types of metallic elements, said metallic elements comprising at least one type of metallic element selected from Group 3B of the periodic table as a first metallic element and at least one type of metallic element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids as a second metallic element, provided that the maximum concentration of each of the second metallic elements is 1.0 wt % or less.
摘要翻译：作为用于制造半导体的等离子体反应的夹具材料，本发明提供了具有耐等离子体腐蚀性，特别是耐氟基等离子体气体的耐腐蚀性的石英玻璃，其可以在不引起硅晶片异常的情况下使用; 本发明还提供一种石英玻璃夹具及其制造方法。含有0.1〜20重量％的两种以上金属元素的石英玻璃，所述金属元素包含选自元素周期表第3B族的至少一种金属元素作为第一金属元素和至少一种金属元素选自Mg，Ca，Sr，Ba，Sc，Y，Ti，Zr，Hf，镧系元素和锕系元素作为第二金属元素，条件是每个第二金属元素的最大浓度为1.0 wt％以下。

2. 发明授权

US07661277B2 Quartz glass having excellent resistance against plasma corrosion and method for producing the same 有权
标题翻译：具有优异的等离子体腐蚀性的石英玻璃及其制造方法
公开(公告)号：US07661277B2
公开(公告)日：2010-02-16
申请号：US12003353
申请日：2007-12-21
申请人： Tatsuhiro Sato , Nobumasa Yoshida , Mamoru Endo
发明人： Tatsuhiro Sato , Nobumasa Yoshida , Mamoru Endo
IPC分类号： C03B19/00 , C03B20/00 , C03C3/00 , C03C3/06 , B32B17/06 , B32B18/00
CPC分类号： C03C3/06 , C03B19/01 , C03B19/06 , C03B19/066 , C03B19/09 , C03B19/1438 , C03B19/1453 , C03B20/00 , C03B2201/36 , C03C2201/36 , C03C2203/10 , C03C2203/22 , C03C2203/40
摘要： As a jig material to use under plasma reaction for producing semiconductors, the present invention provides a quartz glass having resistance against plasma corrosion, particularly corrosion resistance against fluorine-based plasma gases, and which is usable without causing anomalies to silicon wafers; the present invention furthermore provides a quartz glass jig, and a method for producing the same. A quartz glass containing 0.1 to 20 wt % in total of two or more types of metallic elements, said metallic elements comprising at least one type of metallic element selected from Group 3B of the periodic table as a first metallic element and at least one type of metallic element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids as a second metallic element, provided that the maximum concentration of each of the second metallic elements is 1.0 wt % or less.
摘要翻译：作为制造半导体的等离子体反应中使用的夹具材料，本发明提供一种具有耐等离子体腐蚀性，特别是耐氟等离子体气体的耐腐蚀性的石英玻璃，可以在不引起硅晶片异常的情况下使用; 本发明还提供一种石英玻璃夹具及其制造方法。含有0.1〜20重量％的两种以上金属元素的石英玻璃，所述金属元素包含选自元素周期表第3B族的至少一种金属元素作为第一金属元素和至少一种金属元素选自Mg，Ca，Sr，Ba，Sc，Y，Ti，Zr，Hf，镧系元素和锕系元素作为第二金属元素，条件是每个第二金属元素的最大浓度为1.0 wt％以下。

3. 发明申请

US20080113174A1 Quartz glass having excellent resistance against plasma corrosion and method for producing the same 有权
标题翻译：具有优异的等离子体腐蚀性的石英玻璃及其制造方法
公开(公告)号：US20080113174A1
公开(公告)日：2008-05-15
申请号：US12003353
申请日：2007-12-21
申请人： Tatsuhiro Sato , Nobumasa Yoshida , Mamoru Endo
发明人： Tatsuhiro Sato , Nobumasa Yoshida , Mamoru Endo
IPC分类号： C03B19/00 , B32B18/00 , C03C3/06
CPC分类号： C03C3/06 , C03B19/01 , C03B19/06 , C03B19/066 , C03B19/09 , C03B19/1438 , C03B19/1453 , C03B20/00 , C03B2201/36 , C03C2201/36 , C03C2203/10 , C03C2203/22 , C03C2203/40
摘要： As a jig material to use under plasma reaction for producing semiconductors, the present invention provides a quartz glass having resistance against plasma corrosion, particularly corrosion resistance against fluorine-based plasma gases, and which is usable without causing anomalies to silicon wafers; the present invention furthermore provides a quartz glass jig, and a method for producing the same. A quartz glass containing 0.1 to 20 wt % in total of two or more types of metallic elements, said metallic elements comprising at least one type of metallic element selected from Group 3B of the periodic table as a first metallic element and at least one type of metallic element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids as a second metallic element, provided that the maximum concentration of each of the second metallic elements is 1.0 wt % or less.
摘要翻译：作为制造半导体的等离子体反应中使用的夹具材料，本发明提供一种具有耐等离子体腐蚀性，特别是耐氟等离子体气体的耐腐蚀性的石英玻璃，可以在不引起硅晶片异常的情况下使用; 本发明还提供一种石英玻璃夹具及其制造方法。含有0.1〜20重量％的两种以上金属元素的石英玻璃，所述金属元素包含选自元素周期表第3B族的至少一种金属元素作为第一金属元素和至少一种金属元素选自Mg，Ca，Sr，Ba，Sc，Y，Ti，Zr，Hf，镧系元素和锕系元素作为第二金属元素，条件是每个第二金属元素的最大浓度为1.0 wt％以下。

4. 发明申请

US20050272588A1 Quartz glass having excellent resistance against plasma corrosion and method for producing the same 有权
标题翻译：具有优异的等离子体腐蚀性的石英玻璃及其制造方法
公开(公告)号：US20050272588A1
公开(公告)日：2005-12-08
申请号：US11076944
申请日：2005-03-11
申请人： Tatsuhiro Sato , Nobumasa Yoshida , Mamoru Endo
发明人： Tatsuhiro Sato , Nobumasa Yoshida , Mamoru Endo
IPC分类号： C03B19/01 , C03B19/06 , C03B19/09 , C03B19/14 , C03C3/06
CPC分类号： C03C3/06 , C03B19/01 , C03B19/06 , C03B19/066 , C03B19/09 , C03B19/1438 , C03B19/1453 , C03B20/00 , C03B2201/36 , C03C2201/36 , C03C2203/10 , C03C2203/22 , C03C2203/40
摘要： As a jig material to use under plasma reaction for producing semiconductors the present invention provides a quartz glass having resistance against plasma corrosion, particularly corrosion resistance against fluorine-based plasma gases, and which is usable without causing anomalies to silicon wafers; the present invention furthermore provides a quartz glass jig, and a method for producing the same. A quartz glass containing 0.1 to 20 wt % in total of two or more types of metallic elements, said metallic elements comprising at least one type of metallic element selected from Group 3B of the periodic table as a first metallic element and at least one type of metallic element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids as a second metallic element, provided that the maximum concentration of each of the second metallic elements is 1.0 wt % or less.
摘要翻译：作为用于制造半导体的等离子体反应的夹具材料，本发明提供了具有耐等离子体腐蚀性，特别是耐氟基等离子体气体的耐腐蚀性的石英玻璃，其可以在不引起硅晶片异常的情况下使用; 本发明还提供一种石英玻璃夹具及其制造方法。含有0.1〜20重量％的两种以上金属元素的石英玻璃，所述金属元素包含选自元素周期表第3B族的至少一种金属元素作为第一金属元素和至少一种金属元素选自Mg，Ca，Sr，Ba，Sc，Y，Ti，Zr，Hf，镧系元素和锕系元素作为第二金属元素，条件是每个第二金属元素的最大浓度为1.0 wt％以下。

5. 发明授权

US5876473A Method of producing cristobalite containing silica glass 失效
标题翻译：生产含方石英的石英玻璃的方法
公开(公告)号：US5876473A
公开(公告)日：1999-03-02
申请号：US727552
申请日：1996-10-25
申请人： Kyoichi Inaki , Tohru Segawa , Nobumasa Yoshida , Mamoru Endo
发明人： Kyoichi Inaki , Tohru Segawa , Nobumasa Yoshida , Mamoru Endo
IPC分类号： C03B20/00 , C03B32/02 , C03C3/06 , C03C14/00 , C03B5/00 , C03C10/14
CPC分类号： C03C14/004 , C03B20/00 , C03B32/02 , C03C3/06 , C03C2201/02 , C03C2201/80 , C03C2214/20 , C03C2214/30
摘要： Cristobalite-containing silica glass is provided wherein .alpha.-cristobalite in the shape of a small sphere or a small, round-edged or sharp-edged, three-dimensional region is dispersed in the silica glass matrix. The diameter of each .alpha.-cristobalite sphere or region is, in the range of 0.1 um to 1000 um, and the content of the .alpha.-cristobalite is at least 10 wt. %. The cristobalite-containing silica glass is produced by heating a mixture of two kinds or more of crystalline silicon dioxide powder with melting points different from each other by 20.degree. C. or more. The mixture contains silicon dioxide having the highest melting point in the range of 10 wt. % to 80 Wt. % and is heated at temperatures ranging from the lowest melting point to a temperature lower than the highest melting point.
摘要翻译： PCT No.PCT / EP96 / 00794 Sec。 371日期1996年10月25日第 102（e）日期1996年10月25日PCT 1996年2月27日PCT公布。公开号WO96 / 26908 日本1996年9月6日提供了含方石英的二氧化硅玻璃，其中将小球形或小圆形边缘或锐边三维区域形成的α-方英石分散在石英玻璃基质中。每个α-方解石球体或区域的直径在0.1μm至1000μm的范围内，并且α-方英石的含量为至少10wt。％。通过将两种以上的结晶二氧化硅粉末的熔点彼此不同的混合物加热20℃以上来制造含方石英的石英玻璃。该混合物含有熔点最高在10wt。％范围内的二氧化硅。至80 Wt。并且在从最低熔点到低于最高熔点的温度的温度下加热。

6. 发明授权

US06458703B2 Method for manufacturing semiconductor devices with allevration of thermal stress generation in conductive coating 失效
标题翻译：用于制造导电涂层中产生热应力的半导体器件的方法
公开(公告)号：US06458703B2
公开(公告)日：2002-10-01
申请号：US09389515
申请日：1999-09-03
申请人： Mamoru Endo , Junichi Takeuchi , Michio Asahina , Eiji Suzuki , Kazuki Matsumoto
发明人： Mamoru Endo , Junichi Takeuchi , Michio Asahina , Eiji Suzuki , Kazuki Matsumoto
IPC分类号： H01L2144
CPC分类号： H01L21/76856 , H01L21/28518 , H01L21/76828 , H01L21/76843 , H01L21/76877
摘要： A method for manufacturing a semiconductor device that fills contact holes with conductive material such as aluminum or an aluminum alloy. A semiconductor device is manufactured by the process of forming an opening such as a contact hole in an interlayer dielectric film formed on a semiconductor substrate having a device element formed thereon. A first film and a second film made of conductive material such as aluminum or an alloy containing aluminum are formed on the interlayer dielectric film and the opening. The second film is then gradually cooled.
摘要翻译：一种半导体器件的制造方法，其用诸如铝或铝合金的导电材料填充接触孔。通过在其上形成有器件元件的半导体衬底上形成的层间电介质膜中形成诸如接触孔的开口的方法来制造半导体器件。在层间电介质膜和开口上形成由铝或含有铝的合金的导电材料制成的第一膜和第二膜。然后第二个膜逐渐冷却。

7. 发明授权

US5204877A Spread spectrum modulating device 失效
标题翻译：扩频调制装置
公开(公告)号：US5204877A
公开(公告)日：1993-04-20
申请号：US829731
申请日：1992-01-31
申请人： Mamoru Endo , Yoshitaka Uchida
发明人： Mamoru Endo , Yoshitaka Uchida
IPC分类号： H04J13/00 , H04J13/10 , H04L5/02
CPC分类号： H04L5/02 , H04B1/707 , H04J13/0074
摘要： In a spread spectrum modulating device according to the present invention transmission data are converted into parallel data by a serial-parallel converting circuit, which are held by a latch circuit and assign upper digit addresses.Lower digit addresses in the memory are assigned by a counter.Parallel data outputted by the memory are converted into analogue signals by a D/A converter, which analogue signals are multiplied by a carrier by a multiplier to obtain a spread spectrum signal.Owing to the construction described above, a simple and small scale construction can be realized for the spread spectrum modulating device.
摘要翻译：在根据本发明的扩频调制装置中，发送数据由串并联转换电路转换成并行数据，并由锁存电路保持并分配高位数地址。存储器中的低位地址由计数器分配。由存储器输出的并行数据由D / A转换器转换为模拟信号，模拟信号由乘法器乘以载波以获得扩频信号。由于上述结构，可以对扩频调制装置实现简单小规模的结构。

8. 发明授权

US5073898A Communication device 失效
标题翻译：通讯设备
公开(公告)号：US5073898A
公开(公告)日：1991-12-17
申请号：US472089
申请日：1990-01-30
申请人： Mamoru Endo , Masahiro Hamatsu
发明人： Mamoru Endo , Masahiro Hamatsu
IPC分类号： H03H9/72 , H03D1/00 , H03D3/06 , H03D3/34 , H04B1/69 , H04J13/00
CPC分类号： H04B1/709 , H04B1/70712
摘要： A signal processing circuit utilizes a convolver correlating a reference carrier signal with a received signal. The correlator output is detected and then demodulated to output the signal information originally present on the carrier. For a conventional AM signal the reference carrier signal is applied at a frequency offset from the AM center frequency. When the carrier is an FM signal, the reference signal is applied at a frequency equal to the center frequency of the FM signal. Similar procedures are followed for a spread-modulated AM signal, and the reference signal is modulated with a suitably timed-reverse replica of the pseudo-noise code. A similar procedure is used to process spread-spectrum frequency shift keyed FM signals.
摘要翻译：信号处理电路利用将参考载波信号与接收信号相关联的卷积器。检测相关器输出，然后进行解调，输出载波上最初存在的信号信息。对于常规AM信号，参考载波信号以与AM中心频率偏移的频率施加。当载波是FM信号时，以等于FM信号的中心频率的频率施加参考信号。对于扩展调制的AM信号，遵循类似的过程，并且使用伪噪声码的合适的定时反向复制品对参考信号进行调制。类似的过程用于处理扩频频移键控FM信号。

9. 发明授权

US5408608A Distributed data base control center having a plurality of information tables for facilitating a direct communication among terminal units of a network 失效
标题翻译：分布式数据库控制中心具有多个信息表，用于促进网络的终端单元之间的直接通信
公开(公告)号：US5408608A
公开(公告)日：1995-04-18
申请号：US678338
申请日：1991-05-08
申请人： Tadamitsu Ryu , Yoshio Mogi , Takanori Fukatsu , Gen Kakehi , Masahiko Murakawa , Mamoru Endo , Mitsuhiko Yamagata , Katsuo Sato , Akira Hashimoto , Hiroshi Araki , Yasumasa Takahashi
发明人： Tadamitsu Ryu , Yoshio Mogi , Takanori Fukatsu , Gen Kakehi , Masahiko Murakawa , Mamoru Endo , Mitsuhiko Yamagata , Katsuo Sato , Akira Hashimoto , Hiroshi Araki , Yasumasa Takahashi
IPC分类号： G06F17/30 , G06F13/14
CPC分类号： G06F17/30575 , Y10S707/959 , Y10S707/966
摘要： A distributed data base system is formed by terminal units connected in a public network or a private network. Each terminal unit stores respectively the real data and a temporary center for storing the one or a plurality of control information among various pieces of control information, such as contents corresponding to each real data, keyword or command assigned to data. Moreover, check information set up for acquiring security is provided as the one of the terminal unit. A terminal unit utilizing data obtains identification information of terminal units storing relevant real data by inputting contents, commands or keywords by accessing the center and reading or extracting the necessary real data through the network from a terminal unit having real data based on such identification information but is capable of restricting users (terminal units) which are allowed to read the open data in accordance with the degree of importance of the data.This center, when it is assigned to the one terminal unit forming a distributed data base system, executes the control by gathering necessary control information from each terminal unit. This center having control information may be realized by the one terminal unit, but a center may also be provided individually corresponding to the items of information to be controlled. Moreover, the center may be established in one terminal unit and the center may be changed to the other terminal unit from the one terminal unit.
摘要翻译： PCT No.PCT / JP90 / 01161 Sec。 371日期1991年5月8日 102（e）日期1991年5月8日PCT 1990年9月11日PCT PCT。公开号WO91 / 04532 日期：1991年04月4日。分布式数据库系统由连接在公共网络或私有网络中的终端单元组成。每个终端单元分别存储各种控制信息中的一个或多个控制信息的临时中心，例如与分配给数据的每个实际数据，关键字或命令对应的内容。此外，提供用于获取安全性的检查信息作为终端单元之一。利用数据的终端单元通过访问中心输入内容，命令或关键字并通过网络从具有基于这样的识别信息的实际数据的终端单元读取或提取必要的实际数据来获得存储相关实际数据的识别信息，但是能够根据数据的重要性限制被允许读取开放数据的用户（终端单元）。该中心当分配给形成分布式数据库系统的一个终端单元时，通过从每个终端单元收集必要的控制信息来执行控制。具有控制信息的中心可以由一个终端单元实现，但是也可以分别对应于要控制的信息项提供中心。此外，中心可以建立在一个终端单元中，并且中心可以从一个终端单元改变为另一个终端单元。

10. 发明授权

US5291515A Spread spectrum communication device 失效
标题翻译：扩频通信设备
公开(公告)号：US5291515A
公开(公告)日：1994-03-01
申请号：US713462
申请日：1991-06-11
申请人： Yoshitaka Uchida , Mamoru Endo , Masahiro Hamatsu , Shigeo Akazawa
发明人： Yoshitaka Uchida , Mamoru Endo , Masahiro Hamatsu , Shigeo Akazawa
IPC分类号： H04B1/69 , H04B1/709 , H04J13/00 , H04L7/04 , H04L27/30
CPC分类号： H04L7/043 , H04B1/69 , H04B1/709 , H04J13/0074
摘要： On the transmitter side, data to be transmitted are converted into a plurality of parallel data sets by a serial-parallel converter 101 and spread spectrum modulation is effected by means of PN code generators 105 and selectors 102. Each of the modulated outputs is delayed by a delaying circuit 103 with reference to a sounder channel and the phase thereof. The output thus delayed and the output of the sounder channel are added by an adder 104 to be multiplexed and transmitted.On the receiver side, correlation between a received signal and a reference signal is formed by a correlator 201 to obtain a correlation pulse from the correlation output thus obtained. Data demodulation is effected by means of a sounder detecting circuit 209, a sampling pulse generating circuit 210 and an information detecting circuit 211, starting from this correlation pulse.According to the structure described above, in SS communication, data demodulation can be effected with a high efficiency by using a single correlator.
摘要翻译：在发射机侧，由串并行转换器101将要发送的数据转换成多个并行数据集，并通过PN码发生器105和选择器102进行扩频调制。每个调制输出被延迟参考发声器通道的延迟电路103及其相位。输出如此延迟，并且发声器通道的输出由加法器104相加以进行复用和发送。在接收机侧，由相关器201形成接收信号与参考信号之间的相关，以从这样获得的相关输出中获得相关脉冲。通过发声器检测电路209，采样脉冲发生电路210和信息检测电路211，从该相关脉冲开始进行数据解调。根据上述结构，在SS通信中，可以通过使用单个相关器以高效率进行数据解调。

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