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1. 发明授权

US4798393A Rider-controlled working machine with four-wheel steering system 失效
标题翻译：具有四轮转向系统的骑手控制作业机
公开(公告)号：US4798393A
公开(公告)日：1989-01-17
申请号：US63700
申请日：1987-06-12
申请人： Tatsuhiko Miura , Hiroshi Uno
发明人： Tatsuhiko Miura , Hiroshi Uno
IPC分类号： B62D7/15 , B62D3/02
CPC分类号： B62D7/1509 , Y10S180/90
摘要： A rider-controlled working machine having a four-wheel steering system including a steering link mechanism operatively interconnecting a steering wheel and front and rear wheels for steering the front and rear wheels simultaneously. The steering link mechanism includes a device for steering the rear wheels such that when the steering wheel is turned through a relatively large angle, the center of turning movement of the working machine is positioned between extensions of the axles of the front and rear wheels at the time the front and rear wheels are in a neutral steering position, and when the steering wheel is turned through a relatively small angle, the center of turning movement of the working machine is positioned between an extension of the transverse axis of an earth working unit coupled to the rear end of the working machine and the extensions of the axles of the rear wheels.
摘要翻译：一种具有四轮转向系统的驾驶员控制的工作机械，该四轮转向系统包括操作性连接方向盘和前后轮的转向连杆机构，用于同时转向前轮和后轮。转向连杆机构包括用于转向后轮的装置，使得当方向盘转过相对较大的角度时，工作机械的转动中心位于前轮和后轮的轴的延伸部之间时，前轮和后轮处于中立转向位置，并且当方向盘转过相对较小的角度时，工作机械的转动中心位于耦合的地球工作单元的横向轴线的延伸部分之间到工作机的后端和后轮的轴的延伸部分。

2. 发明授权

US4613009A Wheel supporting structure for riding type working vehicles 失效
标题翻译：骑行式工作车轮支撑结构
公开(公告)号：US4613009A
公开(公告)日：1986-09-23
申请号：US767861
申请日：1985-08-21
申请人： Kenji Nakamura , Tatsuhiko Miura
发明人： Kenji Nakamura , Tatsuhiko Miura
IPC分类号： B60G1/00 , B60K17/30 , B62D7/14 , B62D49/00 , B60G19/06 , B62D7/06
CPC分类号： B62D7/142 , B60G1/00 , B60K17/30 , B62D49/00
摘要： A wheel supporting structure (200, 300, 400) for riding type working vehicles (1) comprises a knuckle holder (80, 90) fixed to a body (2) of the vehicle and formed with a plurality of fixing holes, (83, 84, 85, 93, 94, 95) vertically spaced apart from each other, a knuckle (55, 73) for supporting a ground wheel (7, 8) of the vehicle, and an arm member (59, 77) vertically swingably pivoted at one end thereof on a portion of the vehicle body (2, 40) including the knuckle holder (80, 90) and pivotally connected at the other end thereof to the knuckle (55, 73), and the knuckle (55, 73) is selectively fixed by bolting (99, 309) to one of the fixing holes (83, 84, 85, 93, 94, 95).
摘要翻译：一种用于骑乘式工作车辆（1）的车轮支撑结构（200,300,400）包括固定到车辆主体（2）的转向节保持器（80,90），并形成有多个固定孔（83， 84,85,93,94,95），用于支撑所述车辆的研磨轮（7,8）的转向节（55,73）和垂直摆动地枢转的臂构件（59,77），所述转向节在其一端包括转向节保持器（80,90）的车体（2,40）的一部分上，并且在另一端枢转地连接到转向节（55,73），转向节（55,73）通过螺栓（99,309）选择性地固定到一个固定孔（83,84,85,93,94,95）中。

3. 发明授权

US08513094B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08513094B2
公开(公告)日：2013-08-20
申请号：US13470844
申请日：2012-05-14
申请人： Tatsuhiko Miura
发明人： Tatsuhiko Miura
IPC分类号： H01L21/46 , H01L21/30
CPC分类号： H01L21/68764 , C23C14/34 , C23C14/352 , H01L21/28512 , H01L21/6719 , H01L21/67748 , H01L21/68735 , H01L21/68771 , H01L21/68785 , H01L21/76855 , H01L29/456 , H01L29/66727 , H01L29/66734 , H01L29/7813
摘要： In the manufacturing steps of a power-type semiconductor device, after grinding the back surface of the semiconductor wafer, when a metal film is deposited by sputtering deposition over the back surface of the wafer in a preheated state, the wafer is contained in an annular susceptor, and processed. A radial vertical cross section of the annular shape of the susceptor has a first upper surface closer to a horizontal surface for holding a peripheral portion of the top surface of the semiconductor wafer against gravity, and a second upper surface continued to and located outside the first upper surface and closer to a vertical surface for holding a side surface of the semiconductor wafer against lateral displacement.
摘要翻译：在功率型半导体器件的制造步骤中，在研磨半导体晶片的背面之后，当通过在预热状态下通过溅射沉积在晶片的背面上沉积金属膜时，晶片被包含在环形感受器，并处理。基座的环形形状的径向垂直横截面具有靠近水平表面的第一上表面，用于保持半导体晶片的顶表面的周边部分免受重力，第二上表面继续并位于第一上表面并且更靠近垂直表面，用于保持半导体晶片的侧表面防止横向位移。

4. 发明授权

US09177813B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US09177813B2
公开(公告)日：2015-11-03
申请号：US12727337
申请日：2010-03-19
申请人： Tatsuhiko Miura
发明人： Tatsuhiko Miura
IPC分类号： H01L21/44 , H01L21/285 , C23C14/16 , H01L21/768 , H01L23/532 , H01L29/417 , H01L29/45 , H01L29/47 , H01L29/66 , H01L29/739 , H01L29/78 , H01L29/872 , H01L27/02 , H01L29/06 , H01L29/423
CPC分类号： H01L21/28568 , C23C14/165 , H01L21/28518 , H01L21/2855 , H01L21/76846 , H01L21/76876 , H01L21/76877 , H01L23/53223 , H01L27/0255 , H01L29/0696 , H01L29/41741 , H01L29/41766 , H01L29/42372 , H01L29/456 , H01L29/47 , H01L29/4966 , H01L29/66727 , H01L29/66734 , H01L29/7397 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： In MOSFET having SBD as a protection element, a TiW (alloy having tungsten as a main component) film is used as an aluminum-diffusion barrier metal film below an aluminum source electrode in order to secure properties of SBD. The present inventors have found that a tungsten-based barrier metal film is in the form of columnar grains having a lower barrier property than that of a titanium-based barrier metal film such as TiN so that aluminum spikes are generated relatively easily in a silicon substrate. In the present invention, when a tungsten-based barrier metal film is formed by sputtering as a barrier metal layer between an aluminum-based metal layer and a silicon-based semiconductor layer therebelow, the lower layer is formed by ionization sputtering while applying a bias to the wafer side and the upper layer is formed by sputtering without applying a bias to the wafer side.
摘要翻译：在具有SBD作为保护元件的MOSFET中，为了确保SBD的特性，使用TiW（具有钨作为主要成分的合金）膜作为铝源电极下方的铝扩散阻挡金属膜。本发明人已经发现，钨基阻挡金属膜是具有比钛基阻挡金属膜如TiN低的阻挡性的柱状晶体的形式，使得在硅衬底中相对容易地产生铝尖峰。在本发明中，当通过溅射形成钨基阻挡金属膜作为铝基金属层和其下的硅基半导体层之间的阻挡金属层时，通过电离溅射形成下层，同时施加偏压并且通过溅射形成上层，而不向晶片侧施加偏压。

5. 发明申请

US20090179261A1 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090179261A1
公开(公告)日：2009-07-16
申请号：US12351266
申请日：2009-01-09
申请人： Kazuya SEKIGUCHI , Yoshio Fukayama , Yuji Takahashi , Tomokuni Chino , Tsuyoshi Kachi , Katsuhiro Mitsui , Daisuke Ono , Tatsuhiko Miura
发明人： Kazuya SEKIGUCHI , Yoshio Fukayama , Yuji Takahashi , Tomokuni Chino , Tsuyoshi Kachi , Katsuhiro Mitsui , Daisuke Ono , Tatsuhiko Miura
IPC分类号： H01L29/78 , H01L21/441
CPC分类号： H01L29/7813 , H01L21/2855 , H01L21/67069 , H01L23/53223 , H01L29/456 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L2924/0002 , H01L2924/00
摘要： Provided is a manufacturing method of a semiconductor device wherein the generation of voids is prevented in aluminum-based electrodes or the like. The method is suitable for manufacturing a semiconductor device adapted for vehicles, which is required to have a high reliability. However, it is very difficult that power semiconductor devices such as power MOSFETs, in particular, trench gate type power MOS devices are formed without having any void since the thickness of aluminum-based electrodes thereof is as large as about 3500 to 5500 nm (2.5 μm or more). In the present invention, a method is provided wherein at the time of forming an aluminum-based electrode metal film positioned over a wafer and having a thickness of 2.5 μm or more over a highland/lowland-repeated region in a line and space form by sputtering, the temperature of the wafer is set to 400° C. or higher and lower than 500° C.
摘要翻译：提供一种半导体器件的制造方法，其中在铝基电极等中防止空隙的产生。该方法适用于制造适于车辆的半导体装置，其需要具有高的可靠性。然而，功率MOSFET特别是沟槽栅型功率MOS器件等功率半导体器件由于铝基电极的厚度大到3500〜5500nm（2.5 妈妈或更多）。在本发明中，提供了一种方法，其中在通过在线和空间形式的高原/低地重复区域上形成位于晶片上并具有2.5μm或更大的厚度的铝基电极金属膜时，由溅射时，将晶片的温度设定为400℃以上且低于500℃

6. 发明授权

US4258820A Sub-frame supporting apparatus for an automobile 失效
标题翻译：用于汽车的子框架支撑装置
公开(公告)号：US4258820A
公开(公告)日：1981-03-31
申请号：US70336
申请日：1979-08-27
申请人： Tatsuhiko Miura , Takefumi Toyoshima , Kazuo Kikuchi , Akio Masaki
发明人： Tatsuhiko Miura , Takefumi Toyoshima , Kazuo Kikuchi , Akio Masaki
IPC分类号： F16F15/08 , B60G99/00 , B62D21/00 , B62D21/11 , B62D27/04
CPC分类号： B60G99/004 , B62D21/11 , B60G2204/41 , B60G2204/44
摘要： A sub-frame supporting device in which a sub-frame adapted to support an engine, wheels and the like is supported from the body of a vehicle through an elastic support member. The supporting device comprises a pair of upper and lower holding plates oppositely disposed, a spacer pipe connecting the holding plates, a fastener for fastening the holding plates to a vehicle body and an elastic support member. A flange of the sub-frame is held between the elastic support member and a damper rib, and gaps are formed adjacent the upper and lower surfaces of the elastic support member. The rigidity of the elastic support member is set so as to be decreased with respect to vertical shearing force and increased with respect to lateral compressive force.
摘要翻译：一种副框架支撑装置，其中适于支撑发动机，车轮等的子框架通过弹性支撑构件从车辆的车身支撑。支撑装置包括一对相对设置的上保持板和下保持板，连接保持板的间隔管，用于将保持板紧固到车体的紧固件和弹性支撑构件。子框架的凸缘保持在弹性支撑构件和阻尼肋之间，并且在弹性支撑构件的上表面和下表面附近形成间隙。弹性支撑构件的刚性被设定为相对于垂直剪切力而减小，并且相对于横向压缩力而增加。

7. 发明授权

US08278210B2 Manufacturing method of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US08278210B2
公开(公告)日：2012-10-02
申请号：US12718175
申请日：2010-03-05
申请人： Tatsuhiko Miura
发明人： Tatsuhiko Miura
IPC分类号： H01L21/44
CPC分类号： H01L29/7813 , H01L21/2855 , H01L21/76808 , H01L21/76843 , H01L21/76877 , H01L29/41766 , H01L29/456 , H01L29/66348 , H01L29/66727 , H01L29/66734 , H01L29/7397
摘要： In a modern 0.15 μm power MOSFET, aluminum voids (voids formed in an aluminum-type electrode) are generated frequently in trench portions (source contact trenches) caused by the reduction of a cell pitch for refinement. It is considered to be attributable to the defects which are generated mainly due to a sudden increase of the aspect ratio from 0.84 in the previous generation to 2.8 in the current generation. Accordingly, concave portions of repetitive trenches having a high aspect ratio are filled with an aluminum-type metal by ionized sputtering throughout the processing, from the formation to the filling of an aluminum-type metal seed film.
摘要翻译：在现代的0.15μm功率MOSFET中，铝空隙（形成在铝型电极中的空隙）频繁地由于细胞间距的减小而引起的沟槽部分（源极接触沟槽）中产生细化。这被认为是由于主要是由于上一代的纵横比从上一代的0.84突然增加到当前的2.8的缺陷。因此，通过离子溅射在整个处理中从铝型金属种子膜的形成到填充，填充具有高纵横比的重复沟槽的凹部。

8. 发明授权

US08008193B2 Manufacturing method of semiconductor device and semiconductor manufacturing apparatus therefor 失效
标题翻译：半导体器件的制造方法及其半导体制造装置
公开(公告)号：US08008193B2
公开(公告)日：2011-08-30
申请号：US12436158
申请日：2009-05-06
申请人： Yoshihiro Kainuma , Tatsuhiko Miura , Takashi Sato , Katsuhiro Mitsui , Daisuke Ono
发明人： Yoshihiro Kainuma , Tatsuhiko Miura , Takashi Sato , Katsuhiro Mitsui , Daisuke Ono
IPC分类号： H01L21/44 , H01L21/3205
CPC分类号： H01L21/67748 , H01L21/67207 , H01L21/67742 , H01L24/03 , H01L24/05 , H01L2224/05624 , H01L2224/05655 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01021 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/1306 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/00014 , H01L2924/00
摘要： Provided is a manufacturing method for improving the reliability of a semiconductor device having a back electrode. After formation of semiconductor elements on the surface of a silicon substrate, the backside surface thereof, which is opposite to the element formation surface, is subjected to the following steps in a processing apparatus. After deposition of a first metal film over the backside surface of the silicon substrate in a first chamber, it is heat treated to form a metal silicide film. Then, a nickel film is deposited in a third chamber, followed by deposition of an antioxidant conductor film in a second chamber. Heat treatment for alloying the first metal film and the silicon substrate is performed at least prior to the deposition of the nickel film. The first chamber has therefore a mechanism for depositing the first metal film and a lamp heating mechanism.
摘要翻译：提供一种用于提高具有背面电极的半导体器件的可靠性的制造方法。在硅衬底的表面上形成半导体元件之后，在与元件形成表面相对的背面，在处理设备中进行以下步骤。在第一室中的硅衬底的背面上沉积第一金属膜之后，对其进行热处理以形成金属硅化物膜。然后，将镍膜沉积在第三室中，随后在第二室中沉积抗氧化剂导体膜。至少在沉积镍膜之前进行用于合金化第一金属膜和硅衬底的热处理。因此，第一室具有用于沉积第一金属膜和灯加热机构的机构。

9. 发明授权

US08198162B2 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08198162B2
公开(公告)日：2012-06-12
申请号：US12351266
申请日：2009-01-09
申请人： Kazuya Sekiguchi , Yoshio Fukayama , Yuji Takahashi , Tomokuni Chino , Tsuyoshi Kachi , Katsuhiro Mitsui , Daisuke Ono , Tatsuhiko Miura
发明人： Kazuya Sekiguchi , Yoshio Fukayama , Yuji Takahashi , Tomokuni Chino , Tsuyoshi Kachi , Katsuhiro Mitsui , Daisuke Ono , Tatsuhiko Miura
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L21/2855 , H01L21/67069 , H01L23/53223 , H01L29/456 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L2924/0002 , H01L2924/00
摘要： Provided is a manufacturing method of a semiconductor device wherein the generation of voids is prevented in aluminum-based electrodes or the like. The method is suitable for manufacturing a semiconductor device adapted for vehicles, which is required to have a high reliability. However, it is very difficult that power semiconductor devices such as power MOSFETs, in particular, trench gate type power MOS devices are formed without having any void since the thickness of aluminum-based electrodes thereof is as large as about 3500 to 5500 nm (2.5 μm or more). In the present invention, a method is provided wherein at the time of forming an aluminum-based electrode metal film positioned over a wafer and having a thickness of 2.5 μm or more over a highland/lowland-repeated region in a line and space form by sputtering, the temperature of the wafer is set to 400° C. or higher and lower than 500° C.
摘要翻译：提供一种半导体器件的制造方法，其中在铝基电极等中防止空隙的产生。该方法适用于制造适于车辆的半导体装置，其需要具有高的可靠性。然而，功率MOSFET特别是沟槽栅型功率MOS器件等功率半导体器件由于铝基电极的厚度大到3500〜5500nm（2.5 μm以上）。在本发明中，提供了一种方法，其中在形成位于晶片上方的铝基电极金属膜上，并且在线和空间形式的高地/低地重复区域中具有2.5μm或更大的厚度时，通过溅射时，将晶片的温度设定为400℃以上且低于500℃

10. 发明授权

US4151822A Apparatus for supporting an internal combustion engine 失效
标题翻译：用于支撑内燃机的装置
公开(公告)号：US4151822A
公开(公告)日：1979-05-01
申请号：US793372
申请日：1977-05-03
申请人： Tatsuhiko Miura , Hiroyuki Ito
发明人： Tatsuhiko Miura , Hiroyuki Ito
IPC分类号： F16F1/42 , B60K5/12 , F16F1/387 , F16M5/00 , F16F15/04
CPC分类号： F16F1/387 , B60K5/1291
摘要： The apparatus is employed to fixedly position an internal combustion engine upon a frame. The engine is normally provided with a pair of oppositely positioned arms which are affixed to the engine and project outwardly for connection to a frame. A supporting structure intermediate the engine and the frame is connected to the arms extending from the engine at a first point and to the frame at a second point. This supporting structure comprises a first and second spaced apart generally U-shaped members which have sloping parallel sides provided with a resilient mass therebetween. The first member is provided with a cover plate which is affixed thereto, and thereby forms a hollow chamber with the first member. Within this hollow chamber is disposed another resilient mass that in turn is enclosed by an abutment positioned thereabove. The second member is likewise provided with still another resilient mass which is positioned on a surface beneath the first member. The supporting structure defines the limit of travel of the engine due to external forces such as vibration.
摘要翻译：该装置用于将内燃机固定地定位在框架上。发动机通常设置有一对相对定位的臂，其被固定到发动机并向外突出以连接到框架。在发动机和框架之间的支撑结构连接到在第一点处从发动机延伸并在第二点处延伸到框架的臂。该支撑结构包括第一和第二间隔开的大致U形构件，其具有在其间设置有弹性质量的倾斜平行边。第一构件设置有固定在其上的盖板，从而与第一构件形成中空室。在该中空室内设置另一个弹性质量块，该弹性质量块又由位于其上方的邻接物封闭。第二构件同样设置有另一弹性质量块，其定位在第一构件下方的表面上。支撑结构限定了由于诸如振动之类的外力引起的发动机的行驶极限。

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