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1. 发明授权

US08581679B2 Switch with increased magnetic sensitivity 有权
标题翻译：切换灵敏度提高
公开(公告)号：US08581679B2
公开(公告)日：2013-11-12
申请号：US12713390
申请日：2010-02-26
申请人： Tang Min , Olivier Le Neel , Ravi Shankar
发明人： Tang Min , Olivier Le Neel , Ravi Shankar
IPC分类号： H01H51/22 , H01H57/00
CPC分类号： H01H1/0036
摘要： Switches that are actuated through exposure to a magnetic field are described. A mobile element of a switch includes one or more anchoring members that are in electrical contact with one of the conductive portions. The mobile element also has a beam that is attached to the one or more anchoring members. The beam can be attached to the one or more anchoring members by flexures. The beam has an end portion that is configured to move toward the other conductive portion when exposed to an external force, such as a magnetic field. Various configurations of anchoring members may significantly decrease initial upward beam deformation upon manufacture of the mobile element, resulting in an increased sensitivity upon exposure to a magnetic field. Methods for manufacturing switches that exhibit increased sensitivity to magnetic fields are also disclosed.
摘要翻译：描述通过暴露于磁场而被致动的开关。开关的移动元件包括与导电部分之一电接触的一个或多个锚定构件。移动元件还具有附接到一个或多个锚固构件的梁。梁可以通过弯曲连接到一个或多个锚固构件。梁具有端部，其被配置为当暴露于诸如磁场的外力时朝向另一导电部分移动。锚定构件的各种构造可以在制造移动元件时显着降低初始向上的梁变形，导致暴露于磁场时的灵敏度增加。还公开了对磁场具有增强的灵敏度的开关的制造方法。

2. 发明申请

US20110210808A1 SWITCH WITH INCREASED MAGNETIC SENSITIVITY 有权
标题翻译：开关具有提高的磁性灵敏度
公开(公告)号：US20110210808A1
公开(公告)日：2011-09-01
申请号：US12713390
申请日：2010-02-26
申请人： Tang Min , Olivier Le Neel , Ravi Shankar
发明人： Tang Min , Olivier Le Neel , Ravi Shankar
IPC分类号： H01H1/00 , H01H9/00 , H01H11/00
CPC分类号： H01H1/0036
摘要： Switches that are actuated through exposure to a magnetic field are described. Such switches include conductive portions that are electrically separate from one another when in an open switch configuration. A mobile element of a switch includes one or more anchoring members that are in electrical contact with one of the conductive portions. The mobile element also has a beam that is attached to the one or more anchoring members. The beam can be attached to the one or more anchoring members by flexures. In some cases, the beam includes a plurality of strips. The beam has an end portion that is configured to move toward the other conductive portion when exposed to an external force, such as a magnetic field. When the mobile element electrically contacts the other conductive portion of the substrate, an electrical pathway is established between the conductive portions, giving rise to a closed switch configuration. Various configurations of anchoring members may significantly decrease initial upward beam deformation upon manufacture of the mobile element, resulting in an increased sensitivity upon exposure to a magnetic field. Methods for manufacturing switches that exhibit increased sensitivity to magnetic fields are also disclosed. Switches described can be formed using semiconductor manufacturing techniques. Methods described also include forming a beam that is attached to one or more anchoring members where an end portion of the beam moves in a substantially downward direction upon exposure to a magnetic field of sufficient intensity.
摘要翻译：描述通过暴露于磁场而被致动的开关。这种开关包括当处于开路开关配置时彼此电分离的导电部分。开关的移动元件包括与导电部分之一电接触的一个或多个锚定构件。移动元件还具有附接到一个或多个锚固构件的梁。梁可以通过弯曲连接到一个或多个锚固构件。在一些情况下，梁包括多个条。梁具有端部，其被配置为当暴露于诸如磁场的外力时朝向另一导电部分移动。当移动元件电接触衬底的另一导电部分时，在导电部分之间建立电路径，产生闭合的开关构造。锚定构件的各种构造可以在制造移动元件时显着降低初始向上的梁变形，导致暴露于磁场时的灵敏度增加。还公开了对磁场具有增强的灵敏度的开关的制造方法。所描述的开关可以使用半导体制造技术形成。所描述的方法还包括形成连接到一个或多个锚固构件的梁，其中梁的端部在暴露于足够强度的磁场时沿基本上向下的方向移动。

3. 发明授权

US09019688B2 Capacitance trimming with an integrated heater 有权
标题翻译：电容调整与集成加热器
公开(公告)号：US09019688B2
公开(公告)日：2015-04-28
申请号：US13310466
申请日：2011-12-02
申请人： Olivier Le Neel , Ravi Shankar
发明人： Olivier Le Neel , Ravi Shankar
IPC分类号： H01G7/04 , H01L23/522 , H01L49/02 , H01L23/34 , H01G4/33 , H01L27/06
CPC分类号： H01G7/04 , H01G4/33 , H01L23/345 , H01L23/5223 , H01L23/5228 , H01L27/0688 , H01L28/40 , H01L28/55 , H01L2924/0002 , Y10T29/43 , H01L2924/00
摘要： The present disclosure is directed to a device and a method for achieving a precise capacitance of a capacitor. The method includes trimming a first capacitance of the capacitor to a second capacitance, the capacitor having a first conductive layer separated from a second conductive layer by a dielectric layer. Changing a first dielectric constant of the dielectric layer to a second dielectric constant, where the first dielectric constant corresponding to the first capacitance and the second dielectric constant corresponding to the second dielectric constant includes heating the dielectric layer above a threshold temperature for a time period. The heat is provided by either one of the plates of the capacitor or from a separate heater.
摘要翻译：本公开涉及一种用于实现电容器的精确电容的装置和方法。该方法包括将电容器的第一电容调整为第二电容，该电容器具有通过电介质层与第二导电层分离的第一导电层。将电介质层的第一介电常数改变到第二介电常数，其中对应于第一电容的第一介电常数和对应于第二介电常数的第二介电常数包括将电介质层加热到阈值温度一段时间。热量由电容器的任一个板或从单独的加热器提供。

4. 发明授权

US08451016B2 Device and method for testing magnetic switches at wafer-level stage of manufacture 有权
标题翻译：在晶圆级制造阶段测试磁性开关的装置和方法
公开(公告)号：US08451016B2
公开(公告)日：2013-05-28
申请号：US12650257
申请日：2009-12-30
申请人： Ravi Shankar , Olivier Le Neel
发明人： Ravi Shankar , Olivier Le Neel
IPC分类号： G01R31/20 , G01R31/00 , G01R1/073
CPC分类号： G01R1/07378 , G01R1/07342 , G01R31/31702 , G01R31/318511 , G01R31/3278
摘要： A testing mechanism for testing magnetically operated microelectromechanical system (MEMS) switches at a wafer level stage of manufacture includes an electromagnetic fixture configured to be received in a standard probe ring. The electromagnetic fixture is rotatable, relative to the probe ring, to permit adjustment of orientation of a generated magnetic field relative to the MEMS devices of a subject wafer. The testing mechanism also includes a probe card with probes positioned to contact test pads on the subject wafer. During operation, the probe card is positioned over the wafer to be tested, with the test probes in electrical contact with respective contact pads of the wafer, and the electromagnetic fixture is positioned above the probe card. An electrical potential is applied across the switches on the subject wafer, and the electromagnetic fixture is energized at selected levels of power and duration. Current flow across each switch is measured to determine one or more of: open circuit contact resistance, closed circuit contact resistance, response time, response to switching magnetic field, frequency response, current capacity, critical dimensions, critical angles of magnetic field orientation, etc. Wafer level testing enables rejection of non-compliant switches before the cutting and packaging levels of manufacture.
摘要翻译：用于在晶片级制造阶段测试磁操作微机电系统（MEMS）开关的测试机构包括被配置为接收在标准探针环中的电磁夹具。电磁夹具相对于探针环可旋转，以允许相对于目标晶片的MEMS器件调整产生的磁场的取向。测试机构还包括具有探针的探针卡，所述探针被定位成接触主体晶片上的测试焊盘。在操作期间，探针卡位于要测试的晶片上，测试探针与晶片的相应接触焊盘电接触，并且电磁夹具位于探针卡上方。在主体晶片上的开关上施加电势，并且电磁夹具以选定的功率和持续时间被激励。测量每个开关上的电流，以确定以下一个或多个：开路接触电阻，闭路接触电阻，响应时间，对开关磁场的响应，频率响应，电流容量，临界尺寸，磁场定向的临界角等晶圆级别测试在切割和封装制造水平之前能够拒绝不符合标准的开关。

5. 发明授权

US09448198B2 Microsensor with integrated temperature control 有权
标题翻译：具有集成温度控制的微传感器
公开(公告)号：US09448198B2
公开(公告)日：2016-09-20
申请号：US13176599
申请日：2011-07-05
申请人： Olivier Le Neel , Suman Cherian , Ravi Shankar
发明人： Olivier Le Neel , Suman Cherian , Ravi Shankar
IPC分类号： G01K1/00 , G01K13/00 , G01K17/00 , G01N25/00 , G01N27/327 , G01N33/49
CPC分类号： G01N27/3272 , G01N33/49
摘要： Microsensors that include an integrated thermal energy source and an integrated temperature sensor are capable of providing localized heating and temperature control of individual sensing regions within the microsensor. Localized temperature control allows analyte detection to be carried out at the same temperatures or substantially the same temperatures at which the sensor is calibrated. By carrying out the sensing near the calibration temperature, more accurate results can be obtained. In addition, the temperature of the sensing region can be controlled so that chemical reactions involving the analyte in the sensing region occur near their peak reaction rate. Carrying out the sensing near the peak reaction rate improves the sensitivity of the sensor which is important as sensor dimensions decrease and the magnitude of the generated signals decreases.
摘要翻译：包括集成热能源和集成温度传感器的微型传感器能够提供微传感器内各个感测区域的局部加热和温度控制。局部温度控制允许分析物检测在相同的温度或基本相同的温度下进行，在此温度下传感器被校准。通过在校准温度附近进行感测，可以获得更准确的结果。此外，可以控制感测区域的温度，使得涉及感测区域中的分析物的化学反应在峰值反应速率附近发生。在峰值反应速率附近进行感测提高了传感器的灵敏度，这在传感器尺寸减小并且产生的信号的幅度减小时是重要的。

6. 发明申请

US20120153358A1 INTEGRATED HEAT PILLAR FOR HOT REGION COOLING IN AN INTEGRATED CIRCUIT 有权
标题翻译：用于集成电路中热区域的集成热支架
公开(公告)号：US20120153358A1
公开(公告)日：2012-06-21
申请号：US12975194
申请日：2010-12-21
申请人： Ravi Shankar , Olivier Le Neel
发明人： Ravi Shankar , Olivier Le Neel
IPC分类号： H01L23/367 , H01L21/46
CPC分类号： H01L23/522 , H01L23/3677 , H01L2924/0002 , H01L2924/00
摘要： The thermal energy transfer techniques of the disclosed embodiments utilize passive thermal energy transfer techniques to reduce undesirable side effects of trapped thermal energy at the circuit level. The trapped thermal energy may be transferred through the circuit with thermally conductive structures or elements that may be produced as part of a standard integrated circuit process. The localized and passive removal of thermal energy achieved at the circuit level rather just at the package level is both more effective and more efficient.
摘要翻译：所公开的实施例的热能传递技术利用无源热能传递技术来减少在电路级别被捕获的热能的不期望的副作用。捕获的热能可以通过具有导热结构或可以作为标准集成电路工艺的一部分产生的元件的电路传输。在电路级别实现的热能的局部和被动去除，而不仅仅是在封装级别更有效和更有效。

7. 发明申请

US20110156712A1 DEVICE AND METHOD FOR TESTING MAGNETIC SWITCHES AT WAFER-LEVEL STAGE OF MANUFACTURE 有权
标题翻译：用于在制造水平阶段测试磁性开关的装置和方法
公开(公告)号：US20110156712A1
公开(公告)日：2011-06-30
申请号：US12650257
申请日：2009-12-30
申请人： Ravi Shankar , Olivier Le Neel
发明人： Ravi Shankar , Olivier Le Neel
IPC分类号： G01R31/327 , G01R33/12
CPC分类号： G01R1/07378 , G01R1/07342 , G01R31/31702 , G01R31/318511 , G01R31/3278
摘要： A testing mechanism for testing magnetically operated microelectromechanical system (MEMS) switches at a wafer level stage of manufacture includes an electromagnetic fixture configured to be received in a standard probe ring. The electromagnetic fixture is rotatable, relative to the probe ring, to permit adjustment of orientation of a generated magnetic field relative to the MEMS devices of a subject wafer. The testing mechanism also includes a probe card with probes positioned to contact test pads on the subject wafer. During operation, the probe card is positioned over the wafer to be tested, with the test probes in electrical contact with respective contact pads of the wafer, and the electromagnetic fixture is positioned above the probe card. An electrical potential is applied across the switches on the subject wafer, and the electromagnetic fixture is energized at selected levels of power and duration. Current flow across each switch is measured to determine one or more of: open circuit contact resistance, closed circuit contact resistance, response time, response to switching magnetic field, frequency response, current capacity, critical dimensions, critical angles of magnetic field orientation, etc. Wafer level testing enables rejection of non-compliant switches before the cutting and packaging levels of manufacture.
摘要翻译：用于在晶片级制造阶段测试磁操作微机电系统（MEMS）开关的测试机构包括被配置为接收在标准探针环中的电磁夹具。电磁夹具相对于探针环可旋转，以允许相对于目标晶片的MEMS器件调整产生的磁场的取向。测试机构还包括具有探针的探针卡，所述探针被定位成接触主体晶片上的测试焊盘。在操作期间，探针卡位于要测试的晶片上，测试探针与晶片的相应接触焊盘电接触，并且电磁夹具位于探针卡上方。在主体晶片上的开关上施加电势，并且电磁夹具以选定的功率和持续时间被激励。测量每个开关上的电流，以确定以下一个或多个：开路接触电阻，闭路接触电阻，响应时间，对开关磁场的响应，频率响应，电流容量，临界尺寸，磁场定向的临界角等晶圆级测试在切割和封装制造水平之前能够拒绝不符合标准的开关。

8. 发明授权

US08927909B2 Closed loop temperature controlled circuit to improve device stability 有权
公开(公告)号：US08927909B2
公开(公告)日：2015-01-06
申请号：US12902005
申请日：2010-10-11
申请人： Olivier Le Neel , Fuchao Wang , Ravi Shankar
发明人： Olivier Le Neel , Fuchao Wang , Ravi Shankar
IPC分类号： H05B1/02 , H05B3/12 , H05B3/34
CPC分类号： H05B3/0014 , H01L23/34 , H01L23/345 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2924/15311 , H05B1/0227 , H05B3/02 , H05B3/06 , H05B3/12 , H05B3/34 , H01L2924/00014 , H01L2924/00
摘要： An integrated circuit is provided having an active circuit. A heating element is adjacent to the active circuit and configured to heat the active circuit. A temperature sensor is also adjacent to the active circuit and configured to measure a temperature of the active circuit. A temperature controller is coupled to the active circuit and configured to receive a temperature signal from the temperature sensor. The temperature controller operates the heating element to heat the active circuit to maintain the temperature of the active circuit in a selected temperature range.

9. 发明授权

US08680673B2 Integrated heat pillar for hot region cooling in an integrated circuit 有权
标题翻译：集成电路中用于热区域冷却的集成热柱
公开(公告)号：US08680673B2
公开(公告)日：2014-03-25
申请号：US12975194
申请日：2010-12-21
申请人： Ravi Shankar , Olivier Le Neel
发明人： Ravi Shankar , Olivier Le Neel
IPC分类号： H01L23/34
CPC分类号： H01L23/522 , H01L23/3677 , H01L2924/0002 , H01L2924/00
摘要： The thermal energy transfer techniques of the disclosed embodiments utilize passive thermal energy transfer techniques to reduce undesirable side effects of trapped thermal energy at the circuit level. The trapped thermal energy may be transferred through the circuit with thermally conductive structures or elements that may be produced as part of a standard integrated circuit process. The localized and passive removal of thermal energy achieved at the circuit level rather just at the package level is both more effective and more efficient.
摘要翻译：所公开的实施例的热能传递技术利用无源热能传递技术来减少在电路级别被捕获的热能的不期望的副作用。捕获的热能可以通过具有导热结构或可以作为标准集成电路工艺的一部分产生的元件的电路传输。在电路级别实现的热能的局部和被动去除，而不仅仅是在封装级别更有效和更有效。

10. 发明授权

US08598681B2 Temperature switch with resistive sensor 有权
标题翻译：温度开关带电阻式传感器
公开(公告)号：US08598681B2
公开(公告)日：2013-12-03
申请号：US13341286
申请日：2011-12-30
申请人： Olivier Le Neel , Ravi Shankar
发明人： Olivier Le Neel , Ravi Shankar
IPC分类号： H01L29/00 , H01L21/20
CPC分类号： G01K7/20 , G01K3/005
摘要： The present disclosure is directed to a device and a method for forming a precision temperature sensor switch with a Wheatstone bridge configuration of four resistors and a comparator. When the temperature sensor detects a temperature above a threshold, the switch will change states. The four resistors in the Wheatstone bridge have the same resistance, with three of the resistors having a low temperature coefficient of resistance and the fourth resistor having a high temperature coefficient of resistance. As the temperature increases, the resistance of the fourth resistor will change. The change in resistance of the fourth resistor will change a voltage across the bridge. The voltage across the bridge is coupled to the comparator and compares the voltage with the threshold temperature, such that when the threshold temperature is exceeded, the comparator switches the output off.
摘要翻译：本公开涉及用于形成具有四个电阻器和比较器的惠斯登电桥配置的精密温度传感器开关的装置和方法。当温度传感器检测到温度高于阈值时，开关将改变状态。惠斯通电桥中的四个电阻具有相同的电阻，其中三个电阻具有低的电阻温度系数，第四电阻具有高的电阻温度系数。随着温度的升高，第四个电阻的电阻将发生变化。第四个电阻器的电阻变化会改变跨桥的电压。桥上的电压耦合到比较器并将电压与阈值温度进行比较，使得当超过阈值温度时，比较器关闭输出。

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