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1. 发明授权

US06380479B2 Photovoltaic element and method for manufacture thereof 有权
标题翻译：光伏元件及其制造方法
公开(公告)号：US06380479B2
公开(公告)日：2002-04-30
申请号：US09813296
申请日：2001-03-21
申请人： Takuo Nakai , Hiroyuki Taniguchi , Teruhiko Ienaga , Yasuo Kadonaga
发明人： Takuo Nakai , Hiroyuki Taniguchi , Teruhiko Ienaga , Yasuo Kadonaga
IPC分类号： H01L2500
CPC分类号： H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/0747 , Y02E10/50
摘要： A photovoltaic element which directly converts an optical energy such as solar light into an electric energy. After many uneven sections are formed on the surface of an n-type crystalline silicon substrate (1), the surface of the substrate (1) is isotropically etched. Then the bottoms (b) of the recessed sections are rounded and a p-type amorphous silicon layer (3) is formed on the surface of the substrate (1) through an intrinsic amorphous silicon layer (2). The shape of the surface of the substrate (1) after isotropic etching is such that the bottoms of the recessed sections are slightly rounded and therefore the amorphous silicon layer can be deposited in a uniform thickness.
摘要翻译：将诸如太阳光的光能直接转换成电能的光电元件。在n型晶体硅衬底（1）的表面上形成许多不平坦部分之后，对基片（1）的表面进行各向同性蚀刻。然后，凹部的底部（b）是圆形的，并且通过本征非晶硅层（2）在衬底（1）的表面上形成p型非晶硅层（3）。各向同性蚀刻后的基板（1）的表面的形状使得凹部的底部略微变圆，因此可以以均匀的厚度沉积非晶硅层。

2. 发明授权

US06207890B1 Photovoltaic element and method for manufacture thereof 有权
标题翻译：光伏元件及其制造方法
公开(公告)号：US06207890B1
公开(公告)日：2001-03-27
申请号：US09355311
申请日：1999-07-29
申请人： Takuo Nakai , Hiroyuki Taniguchi , Teruhiko Ienaga , Yasuo Kadonaga
发明人： Takuo Nakai , Hiroyuki Taniguchi , Teruhiko Ienaga , Yasuo Kadonaga
IPC分类号： H01L2500
CPC分类号： H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/0747 , Y02E10/50
摘要： A photovoltaic element which directly converts an optical energy such as solar light into an electric energy. After many uneven sections are formed on the surface of an n-type crystalline silicon substrate (1), the surface of the substrate (1) is isotropically etched. Then the bottoms (b) of the recessed sections are rounded and a p-type amorphous silicon layer (3) is formed on the surface of the substrate (1) through an intrinsic amorphous silicon layer (2). The shape of the surface of the substrate (1) after isotropic etching is such that the bottoms of the recessed sections are slightly rounded and therefore the amorphous silicon layer can be deposited in a uniform thickness.
摘要翻译：将诸如太阳光的光能直接转换成电能的光电元件。在n型晶体硅衬底（1）的表面上形成许多不平坦部分之后，对基片（1）的表面进行各向同性蚀刻。然后，凹部的底部（b）是圆形的，并且通过本征非晶硅层（2）在衬底（1）的表面上形成p型非晶硅层（3）。各向同性蚀刻后的基板（1）的表面的形状使得凹部的底部略微变圆，因此可以以均匀的厚度沉积非晶硅层。

3. 发明授权

US06670542B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06670542B2
公开(公告)日：2003-12-30
申请号：US09747956
申请日：2000-12-27
申请人： Hitoshi Sakata , Yasuo Kadonaga
发明人： Hitoshi Sakata , Yasuo Kadonaga
IPC分类号： H01L3100
CPC分类号： H01L31/0745 , H01L31/0236 , H01L31/02363 , H01L31/0747 , H01L31/202 , H01L31/204 , Y02E10/50 , Y02P70/521
摘要： This invention provides a photovoltaic semiconductor device of high efficiency capable of maintaining good interface characteristics of an amorphous semiconductor layer and a transparent electrode by eliminating damage caused by plasma of a plasma doping layer formed by doping impurity to the i-type amorphous semiconductor layer. The i-type amorphous semiconductor layer substantially not containing impurity for reducing electric resistance on a textured surface of an n-type single crystalline substrate. Then, the plasma doping layer is formed by exposing the n-type single crystalline substrate with the amorphous semiconductor layer formed thereon in an atmosphere of excited gas containing p-type impurity and diffusing the impurity to the amorphous semiconductor layer. A p-type amorphous semiconductor thin film layer containing p-type impurity is formed on the plasma doping layer by chemical vapor deposition and a transparent electrode 5 is formed on the p-type amorphous semiconductor thin film.
摘要翻译：本发明提供一种能够通过消除由掺杂杂质形成的等离子体掺杂层对i型非晶半导体层造成的损伤而能够保持非晶半导体层和透明电极良好的界面特性的高效率的光电半导体器件。基本上不含有用于降低n型单晶衬底的纹理表面上的电阻的杂质的i型非晶半导体层。然后，通过在包含p型杂质的激发气体的气氛中使形成在其上的非晶半导体层露出n型单晶衬底并将杂质扩散到非晶半导体层来形成等离子体掺杂层。通过化学气相沉积在等离子体掺杂层上形成含有p型杂质的p型非晶半导体薄膜层，在p型非晶半导体薄膜上形成透明电极5。

4. 发明申请

US20080230114A1 SOLAR CELL MODULE 审中-公开
标题翻译：太阳能电池模块
公开(公告)号：US20080230114A1
公开(公告)日：2008-09-25
申请号：US12045866
申请日：2008-03-11
申请人： Shihomi Nakatani , Yasuo Kadonaga , Yousuke Ishii , Masaru Hikosaka , Shingo Okamoto
发明人： Shihomi Nakatani , Yasuo Kadonaga , Yousuke Ishii , Masaru Hikosaka , Shingo Okamoto
IPC分类号： H01L31/00
CPC分类号： H01L31/1876 , H01L31/048 , Y02E10/50
摘要： Disclosed is a solar cell module that reduces entering of moisture into a solar cell module from a side surface SF thereof, and has high moisture-resistant properties. The disclosed solar cell module is a solar cell module in which solar cells 13a to 13d are sealed by a sealing member 21 between a transparent front surface protective member 11 and a back surface protective member 12, wherein the sealing member 21 includes at least a first sealing member 14 and a second sealing member 15, the first sealing member and the second sealing member are different in type, and the sealing member 21 exposed to a side surface SF of the solar cell module is the first sealing member 14.
摘要翻译：公开了一种太阳能电池模块，其从其侧面SF减少进入太阳能电池组件的水分，并且具有高耐湿性。所公开的太阳能电池模块是太阳能电池模块，其中太阳能电池13a至13d由透明前表面保护构件11和背面保护构件12之间的密封构件21密封，其中密封构件21至少包括第一密封构件14和第二密封构件15，第一密封构件和第二密封构件的类型不同，暴露于太阳能电池组件的侧表面SF的密封构件21是第一密封构件14。

5. 发明申请

US20080210288A1 SOLAR CELL UNIT AND SOLAR CELL MODULE 审中-公开
标题翻译：太阳能电池单元和太阳能电池模块
公开(公告)号：US20080210288A1
公开(公告)日：2008-09-04
申请号：US12039907
申请日：2008-02-29
申请人： Shihomi Nakatani , Takaaki Nakajima , Yasuo Kadonaga , Kunimoto Ninomiya
发明人： Shihomi Nakatani , Takaaki Nakajima , Yasuo Kadonaga , Kunimoto Ninomiya
IPC分类号： H01L31/042
CPC分类号： H01L31/0504 , Y02E10/50
摘要： A solar cell unit includes first and second solar cells (C1, C2), a first wiring member, a second wiring member, and a third wiring member. The first solar cell (C1) and the second solar cell (C2) each having a first principle surface and a second principle surface opposite the first principle surface, a polarity of the second principle surface being different from a polarity of the first principle surface. The first wiring member electrically connects electrodes, formed on surfaces pointing at a first direction, of the first solar cell (C1) and the second solar cell (C2). The second wiring member is electrically connected to an electrode, formed on a surface pointing at a second direction, of the first solar cell (C1). The third wiring member is electrically connected to an electrode, formed on a surface pointing at the second direction, of the second solar cell (C2).
摘要翻译：太阳能电池单元包括第一和第二太阳能电池（C 1，C 2），第一布线构件，第二布线构件和第三布线构件。第一太阳能电池（C 1）和第二太阳能电池（C 2）各自具有与第一原理表面相对的第一主表面和第二原理表面，第二主表面的极性与第一原理的极性不同表面。第一布线构件电连接形成在第一太阳能电池（C 1）和第二太阳能电池（C 2）的第一方向的表面上的电极。第二布线构件电连接到形成在第一太阳能电池（C 1）的指向第二方向的表面上的电极。第三配线构件电连接到形成在第二太阳能电池（C 2）的指向第二方向的表面上的电极。

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