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1. 发明申请

US20080129851A1 SOLID-STATE IMAGING DEVICE AND IMAGING SYSTEM 有权
标题翻译：固态成像装置和成像系统
公开(公告)号：US20080129851A1
公开(公告)日：2008-06-05
申请号：US11946987
申请日：2007-11-29
申请人： Shigetaka KASUGA , Takumi YAMAGUCHI , Takahiko MURATA , Takayoshi YAMADA
发明人： Shigetaka KASUGA , Takumi YAMAGUCHI , Takahiko MURATA , Takayoshi YAMADA
IPC分类号： H04N5/335 , H04N5/217
CPC分类号： H04N5/335
摘要： A solid-state imaging device includes: a pixel unit which is composed of a plurality of pixel circuits arranged in a matrix, each pixel circuit outputting an analog signal by performing photoelectric conversion; an AD conversion circuit 15a provided for each of columns which sequentially converts a plurality of analog signals outputted from a plurality of ones of the pixel circuits in the column into a plurality of digital signals; a memory circuit 15b provided for each column which includes memories 32 and 33 and performs, in parallel, a process of storing each of the digital signals in one of the memories 32 and 33 and a process of outputting a digital signal stored in advance in the other; and data buses 17 connected to the memory circuit 15b in each column.
摘要翻译：固态成像装置包括：像素单元，其由以矩阵形式排列的多个像素电路组成，每个像素电路通过进行光电转换而输出模拟信号; 为从列中的多个像素电路输出的多个模拟信号依次变换为多个数字信号的各列设置的AD转换电路15a; 为包括存储器32和33的每列提供的存储器电路15b并行地执行将每个数字信号存储在存储器32和33中的一个中的处理以及预先存储的数字信号的处理另一个; 以及连接到每列的存储器电路15b的数据总线17。

2. 发明申请

US20070046801A1 XY ADDRESS TYPE SOLID-STATE IMAGING DEVICE 审中-公开
标题翻译： XY地址型固态成像装置
公开(公告)号：US20070046801A1
公开(公告)日：2007-03-01
申请号：US11463693
申请日：2006-08-10
申请人： Shigetaka KASUGA , Takumi YAMAGUCHI , Takahiko MURATA
发明人： Shigetaka KASUGA , Takumi YAMAGUCHI , Takahiko MURATA
IPC分类号： H04N5/335
CPC分类号： H04N5/357 , H04N5/374 , H04N5/376
摘要： A plurality of pixels that are arranged two-dimensionally, a horizontal scanning circuit and a vertical scanning circuit that output a signal for reading out an accumulated charge in the pixel, and a multiplexer circuit that supplies a control signal to elements constituting each of the pixels based on the signal outputted from the vertical scanning circuit are provided. The vertical scanning circuit is used singly to output a scanning signal for reading out the accumulated charge and a scanning signal for clearing the accumulated charge in the pixel, and the multiplexer circuit is used singly to supply an accumulated charge readout signal and an accumulated charge clearing signal as the control signal based on the scanning signal for reading out the accumulated charge and the scanning signal for clearing the accumulated charge. One vertical scanning circuit is used for both scanning for reading out an accumulated charge and scanning for clearing the accumulated charge, and one multiplexer is used for outputting both an accumulated charge readout signal and an accumulated charge clearing signal, thus allowing a reduction of a chip area and an improvement in an operation yield.
摘要翻译：二维排列的多个像素，输出用于读出像素中的累积电荷的信号的水平扫描电路和垂直扫描电路，以及将控制信号提供给构成每个像素的元素的多路复用电路基于从垂直扫描电路输出的信号。垂直扫描电路单独使用以输出用于读出累积电荷的扫描信号和用于清除像素中的累积电荷的扫描信号，并且多路复用器电路单独使用以提供累积电荷读出信号和累积电荷清除基于用于读出累积电荷的扫描信号和用于清除累积电荷的扫描信号作为控制信号的信号。一个垂直扫描电路用于扫描读出累积电荷并扫描以清除累积电荷，并且一个多路复用器用于输出累积电荷读出信号和累积电荷清除信号，从而允许减少芯片面积和运营收益率的提高。

3. 发明申请

US20060278948A1 SOLID-STATE IMAGE SENSOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：固态图像传感器及其制造方法
公开(公告)号：US20060278948A1
公开(公告)日：2006-12-14
申请号：US11422708
申请日：2006-06-07
申请人： Takumi YAMAGUCHI , Takahiko MURATA , Shigetaka KASUGA
发明人： Takumi YAMAGUCHI , Takahiko MURATA , Shigetaka KASUGA
IPC分类号： H01L31/00
CPC分类号： H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14685 , H01L27/14687
摘要： An object of the present invention is to provide a small solid-state image sensor which realizes significant improvement in sensitivity. The solid-state image sensor of the present invention includes a semiconductor substrate in which photoelectric conversion units are formed, a light-blocking film which is formed above the semiconductor substrate and has apertures formed so as to be positioned above respective photoelectric conversion units, and a high refractive index layer formed in the apertures. Here, each aperture has a smaller aperture width than a maximum wavelength in a wavelength of light in a vacuum converted from a wavelength of the light entering the photoelectric conversion unit through the apertures, and the high refractive index is made of a high refractive index material having a refractive index which allows transmission of light having the maximum wavelength through the aperture.
摘要翻译：本发明的目的是提供一种实现敏感度显着提高的小型固态图像传感器。本发明的固态图像传感器包括形成有光电转换单元的半导体衬底，形成在半导体衬底之上并具有形成为位于各个光电转换单元之上的孔的遮光膜，以及形成在孔中的高折射率层。这里，每个孔径在从通过孔进入光电转换单元的光的波长转换的真空中的光波长中的最大波长较小，高折射率由高折射率材料具有折射率，其允许通过孔径传输具有最大波长的光。

4. 发明申请

US20090079857A1 SOLID-STATE IMAGING DEVICE, RECEIVED-LIGHT INTENSITY MEASURING DEVICE, AND RECEIVED-LIGHT INTENSITY MEASURING METHOD 审中-公开
标题翻译：固态成像装置，接收光强度测量装置和接收光强度测量方法
公开(公告)号：US20090079857A1
公开(公告)日：2009-03-26
申请号：US12235839
申请日：2008-09-23
申请人： Yoshihisa KATO , Takahiko MURATA , Shigetaka KASUGA , Takayoshi YAMADA
发明人： Yoshihisa KATO , Takahiko MURATA , Shigetaka KASUGA , Takayoshi YAMADA
IPC分类号： H04N5/30 , G01J1/44
CPC分类号： G01J1/46 , H04N5/3742 , H04N5/378
摘要： The received-light intensity measuring device includes: a pixel circuit 1 including a photodiode (PD) that accumulates an amount of electric charges according to the intensity of received light, a floating diffusion (FD) that generates a signal voltage VCL according to an amount of retained electric charges, and a transfer switch that controls the transfer, to the FD, of the electric charges accumulated in the PD; a DAC 11 that generates a control voltage VTRAN varying in a ramp waveform and applies VTRAN to the gate of the transfer switch; a column AD conversion circuit 13 that obtains the digital value by quantizing a length of time from a first point in time set with reference to a period during which VTRAN is applied to a second point in time at which a specific fluctuation occurs in a temporal variation rate of the signal voltage VCL while VTRAN is being applied.
摘要翻译：接收光强度测量装置包括：像素电路1，其包括根据接收光的强度累积电荷量的光电二极管（PD）;根据接收光强度产生信号电压VCL的浮动扩散（FD）以及转移开关，其控制在PD中累积的电荷向FD的转移; DAC11，其产生以斜坡波形变化的控制电压VTRAN，并将VTRAN应用于转换开关的栅极; 列AD转换电路13，其通过将从参考VTRAN应用的周期的第一时间点的时间长度量化到在时间变化中发生特定波动的第二时间点来获得数字值 VTRAN被施加时信号电压VCL的速率。

5. 发明申请

US20090212985A1 SOLID-STATE IMAGING DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SIGNAL PROCESSING METHOD 有权
标题翻译：固态成像装置，半导体集成电路和信号处理方法
公开(公告)号：US20090212985A1
公开(公告)日：2009-08-27
申请号：US12388105
申请日：2009-02-18
申请人： Shigetaka KASUGA , Yoshihisa KATO , Takahiko MURATA , Takayoshi YAMADA
发明人： Shigetaka KASUGA , Yoshihisa KATO , Takahiko MURATA , Takayoshi YAMADA
IPC分类号： H03M1/12
CPC分类号： H04N5/378 , H04N5/3742
摘要： A solid-state imaging device includes: pixel circuits arranged in a matrix which perform photoelectric conversion on received light; and an AD conversion unit converting the resultant signal voltage of the photoelectric conversion. The AD conversion unit includes: a reference voltage generation unit generating plural reference voltages which are different from each other within a possible range for a signal voltage; a most significant bit conversion unit that identifies a voltage section including the signal voltage from among the voltage sections each having a corresponding one of the reference voltages as a base point and determines the identified result as the value of the most significant bit of the digital signal; and a least significant bit conversion unit that converts, into the least significant bit of the digital signal, the difference voltage between the signal voltage and the reference voltage as the base point of the identified voltage section.
摘要翻译：固态成像装置包括：以接收光进行光电转换的矩阵状的像素电路; 以及转换所得到的光电转换信号电压的AD转换单元。 AD转换单元包括：在信号电压的可能范围内产生彼此不同的多个参考电压的参考电压产生单元; 一个最高有效位转换单元，其识别包括每个具有对应的一个参考电压的电压部分中的信号电压的电压部分作为基点，并将所识别的结果确定为数字信号的最高有效位的值 ; 以及最低有效位转换单元，其将所述信号电压和所述参考电压之间的差电压转换为所述数字信号的最低有效位作为所识别的电压部分的基点。

6. 发明申请

US20120033117A1 SOLID-STATE IMAGING DEVICE AND DRIVING METHOD 有权
标题翻译：固态成像装置及驱动方法
公开(公告)号：US20120033117A1
公开(公告)日：2012-02-09
申请号：US13271466
申请日：2011-10-12
申请人： Takahiko MURATA , Takayoshi YAMADA , Yoshihisa KATO , Shigetaka KASUGA
发明人： Takahiko MURATA , Takayoshi YAMADA , Yoshihisa KATO , Shigetaka KASUGA
IPC分类号： H04N5/335 , H01L27/146
CPC分类号： H04N5/361 , H01L27/14643 , H04N5/3742 , H04N5/3745
摘要： A plurality of pixel circuits arranged in rows and columns, and each of which outputs an electric signal according to an amount of received light; a first column signal line provided for each of the columns, and for sequentially transferring the electric signals from said pixel circuits in a corresponding column; and a holding circuit provided for each of the pixel circuits in each column, and which holds the electric signal transferred through the column signal line in the corresponding column are provided. A holding circuit includes a first capacitor which holds a first electric signal of the corresponding pixel circuit in a reset state; and a second capacitor which holds a second electric signal after the corresponding pixel circuit receives light. A difference circuit calculates a difference between two electric signals held by the first capacitor and the second capacitor in a same holding circuit.
摘要翻译：多个以行和列排列的像素电路，每个像素电路根据接收的光量输出电信号; 为每个列提供的第一列信号线，并且用于从相应列中的所述像素电路顺序传送电信号; 并且提供为每列中的每个像素电路提供并保持通过相应列中的列信号线传送的电信号的保持电路。保持电路包括：第一电容器，其将相应像素电路的第一电信号保持在复位状态; 以及在相应的像素电路接收光之后保持第二电信号的第二电容器。差分电路在相同的保持电路中计算由第一电容器和第二电容器保持的两个电信号之间的差。

7. 发明申请

US20110109779A1 SOLID-STATE IMAGING DEVICE, ITS PRODUCTION METHOD, CAMERA WITH THE SOLID-STATE IMAGING DEVICE, AND LIGHT RECEIVING CHIP 有权
标题翻译：固态成像装置，其制造方法，具有固态成像装置的相机和接收芯片的光
公开(公告)号：US20110109779A1
公开(公告)日：2011-05-12
申请号：US12947423
申请日：2010-11-16
申请人： Takahiko MURATA , Shigetaka KASUGA , Takumi YAMAGUTI
发明人： Takahiko MURATA , Shigetaka KASUGA , Takumi YAMAGUTI
IPC分类号： H04N5/335
CPC分类号： H01L31/0203 , H01L27/14618 , H01L27/14632 , H01L27/14687 , H01L2224/13 , H01L2924/00011 , H01L2924/00014 , H01L2924/07811 , H01L2924/13091 , H04N5/2251 , H01L2924/00 , H01L2224/0401
摘要： Provided is a light-receiving chip whose transparent protection plate has an area equal to or smaller than an area of the light-receiving chip, and which does not require a base portion for mounting. Provision of the light-receiving chip contributes to reduction in size and weight of cameras. In addition, provision of a solid-state imaging apparatus having excellent productivity contributes to reduction in price of cameras. A solid-state imaging apparatus (10) having: a solid-state imaging device (11) (a light-receiving chip) provided with a plurality of light-receiving cells arranged either one dimensionally or two dimensionally on one main surface of a base substrate; and a transparent protection plate (12) provided to cover a light-receiving area (18) (the plurality of light-receiving cells), where an area of the transparent protection plate is equal to or smaller than an area of the light-receiving chip, and a space (20) is formed between the light-receiving cells and the transparent protection plate.
摘要翻译：提供一种透光保护板的面积等于或小于受光片的面积，并且不需要安装用基座的受光片。提供光接收芯片有助于减小相机的尺寸和重量。此外，提供具有优异生产率的固态成像装置有助于降低相机的价格。一种固态成像装置（10），其具有：固态成像装置（11）（受光芯片），其设置有在基板的一个主面上一维或二维地配置的多个受光单元基质; 以及透明保护板（12），设置成覆盖所述透光保护板的面积等于或小于所述受光区域（18）的光接收区域（多个光接收单元）并且在光接收单元和透明保护板之间形成有空间（20）。

8. 发明申请

US20090059047A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20090059047A1
公开(公告)日：2009-03-05
申请号：US12195584
申请日：2008-08-21
申请人： Takahiko MURATA , Yoshihisa KATO , Shigetaka KASUGA , Takayoshi YAMADA
发明人： Takahiko MURATA , Yoshihisa KATO , Shigetaka KASUGA , Takayoshi YAMADA
IPC分类号： H04N5/335
CPC分类号： H04N5/37452 , H04N5/35581 , H04N5/3559
摘要： Provided is a solid-state imaging device having pixel units that are two-dimensionally arranged, and including: a photodiode that generates an optical signal charge corresponding to an intensity and an exposure time of light; a MOS transistor that transfers the optical signal charge; an accumulating unit that generates a voltage corresponding to the signal charge through the MOS transistor; a storing unit that stores a voltage corresponding to an optical signal charge in the accumulating unit; and a voltage setting unit that sets a value of a voltage in the accumulating unit to a value corresponding to the voltage in the storing unit.
摘要翻译：提供一种具有二维排列的像素单元的固态成像装置，包括：产生对应于光的强度和曝光时间的光信号电荷的光电二极管; 传输光信号电荷的MOS晶体管; 累积单元，其产生对应于通过MOS晶体管的信号电荷的电压; 存储单元，其将与所述积累单元中的光信号电荷相对应的电压存储; 以及电压设定单元，其将所述累积单元中的电压值设定为与所述存储单元中的电压对应的值。

9. 发明申请

US20120098040A1 SOLID STATE IMAGING APPARATUS, METHOD FOR DRIVING THE SAME AND CAMERA USING THE SAME 有权
标题翻译：固态成像装置，用于驱动它们的方法和使用它的相机
公开(公告)号：US20120098040A1
公开(公告)日：2012-04-26
申请号：US13335537
申请日：2011-12-22
申请人： Mitsuyoshi MORI , Takumi YAMAGUCHI , Takahiko MURATA
发明人： Mitsuyoshi MORI , Takumi YAMAGUCHI , Takahiko MURATA
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14641 , H04N5/3741 , H04N5/37457
摘要： A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.
摘要翻译：固态成像装置包括：多个光电转换单元，每个光电转换单元包括排列成至少两行和两列的阵列的多个光电部分; 多个浮动扩散部分，各自通过多个传输晶体管中的每一个连接到每个所述光电转换单元的同一行中的每个光电部分中的每一个，并由所述光电部分共享; 多个读出线各自选择性地连接到所述传输晶体管中的至少两个; 以及多个像素放大器晶体管，每个检测并输出每个所述浮动扩散部分的电位。通过不同的浮动扩散部分读出各自连接到一条读出线并被转移晶体管读出的光电转换部分的电荷。

10. 发明申请

US20080284882A1 SOLID STATE IMAGING APPARATUS, METHOD FOR DRIVING THE SAME AND CAMERA USING THE SAME 有权
标题翻译：固态成像装置，用于驱动它们的方法和使用它的相机
公开(公告)号：US20080284882A1
公开(公告)日：2008-11-20
申请号：US12178250
申请日：2008-07-23
申请人： Mitsuyoshi MORI , Takumi YAMAGUCHI , Takahiko MURATA
发明人： Mitsuyoshi MORI , Takumi YAMAGUCHI , Takahiko MURATA
IPC分类号： H04N5/335
CPC分类号： H01L27/14609 , H01L27/14641 , H04N5/3741 , H04N5/37457
摘要： A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.
摘要翻译：固态成像装置包括：多个光电转换单元，每个光电转换单元包括排列成至少两行和两列的阵列的多个光电部分; 多个浮动扩散部分，各自通过多个传输晶体管中的每一个连接到每个所述光电转换单元的同一行中的每个光电部分中的每一个，并由所述光电部分共享; 多个读出线各自选择性地连接到所述传输晶体管中的至少两个; 以及多个像素放大器晶体管，每个检测并输出每个所述浮动扩散部分的电位。通过不同的浮动扩散部分读出各自连接到一条读出线并被转移晶体管读出的光电转换部分的电荷。

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