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1. 发明授权

US08482003B2 Image display unit 有权
标题翻译：图像显示单元
公开(公告)号：US08482003B2
公开(公告)日：2013-07-09
申请号：US11874955
申请日：2007-10-19
申请人： Mieko Matsumura , Yoshiaki Toyota , Takeshi Sato , Mutsuko Hatano
发明人： Mieko Matsumura , Yoshiaki Toyota , Takeshi Sato , Mutsuko Hatano
IPC分类号： H01L31/00
CPC分类号： H01L29/4908 , G09G3/3233 , G09G2300/0842 , G09G2300/0861 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L29/41733 , H01L51/56
摘要： An image display unit is provided for which it is possible to reduce the number of ion plantation and photolithographic processes required to manufacture the device. A gate electrode GT is a laminated structure of a thin bottom layer metal film GMB and a top layer metal film GMT. A top electrode of a storage capacitor Cst is formed of the bottom layer metal film GMB and ion implantation for the top electrode is performed at the same time as the ion implantation of source-drain electrodes. The gate electrode of a PMOSTFT of the device is also formed with the bottom layer metal GMB, and the ion implantation for threshold adjustment is performed by using the same resist.
摘要翻译：提供了一种图像显示单元，可以减少制造装置所需的离子种植和光刻工艺的数量。栅电极GT是薄底层金属膜GMB和顶层金属膜GMT的层叠结构。存储电容器Cst的顶部电极由底层金属膜GMB形成，并且与源极 - 漏极电极的离子注入同时进行用于顶部电极的离子注入。器件的PMOSTFT的栅极也由底层金属GMB形成，并且通过使用相同的抗蚀剂来执行用于阈值调整的离子注入。

2. 发明授权

US07550772B2 Image display device and manufacturing method thereof 有权
标题翻译：图像显示装置及其制造方法
公开(公告)号：US07550772B2
公开(公告)日：2009-06-23
申请号：US11741272
申请日：2007-04-27
申请人： Yoshiaki Toyota , Takeshi Sato , Mieko Matsumura
发明人： Yoshiaki Toyota , Takeshi Sato , Mieko Matsumura
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L27/1288 , H01L27/124 , H01L27/1255 , H01L27/326 , H01L27/3276 , H01L29/4908 , H01L2227/323
摘要： An image display device of reduced cost is provided. A plurality of gate lines, a plurality of signal lines formed to cross the gate lines in a matrix fashion, and a plurality of thin-film transistors are formed on an insulating substrate, and the plurality of gate lines are laminated electrodes. The plurality of thin-film transistors are configured of transistors of two types of an n-channel conductivity type and a p-channel conductivity type. Gate electrodes of thin-film transistors of one type are laminated electrodes of the same configuration as the gate lines, and gate electrodes of thin-film transistors of the other type are configured of electrodes of the same layer as bottom electrodes of the gate lines.
摘要翻译：提供了一种降低成本的图像显示装置。多个栅极线，以矩阵方式与栅极线交叉的多个信号线和多个薄膜晶体管形成在绝缘基板上，并且多个栅极线是叠层电极。多个薄膜晶体管由n沟道导电型和p沟道导电型两种晶体管构成。一种类型的薄膜晶体管的栅电极是与栅极线相同结构的层叠电极，另一种类型的薄膜晶体管的栅电极由与栅极线的底电极相同的层的电极构成。

3. 发明申请

US20080169469A1 Display device 有权
标题翻译：显示设备
公开(公告)号：US20080169469A1
公开(公告)日：2008-07-17
申请号：US12003462
申请日：2007-12-26
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
IPC分类号： H01L29/04
CPC分类号： H01L27/127 , H01L27/12 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.
摘要翻译：提供了一种用于提高像素的开口率的显示装置。在显示装置中，透明氧化物层，绝缘膜和导电层依次层叠在基板上的像素区域上，导电层具有与栅极信号线连接的薄膜晶体管的栅电极，透明氧化物层的除了栅电极正下方的沟道区域以外的透明氧化物层的区域被转换为导电区域，源极信号线，连接到源极信号线的薄膜晶体管的源极区域部分像素电极和连接到像素电极的薄膜晶体管的漏区部分由导电区域形成。

4. 发明申请

US20080119018A1 Image display unit and method for manufacturing the same 审中-公开
标题翻译：图像显示单元及其制造方法
公开(公告)号：US20080119018A1
公开(公告)日：2008-05-22
申请号：US11979515
申请日：2007-11-05
申请人： Yoshiaki Toyota , Takeshi Sato , Hajime Akimoto
发明人： Yoshiaki Toyota , Takeshi Sato , Hajime Akimoto
IPC分类号： H01L21/84
CPC分类号： H01L27/1288 , H01L27/124 , H01L27/1255 , H01L29/4908
摘要： The present invention provides an image display unit and a method for manufacturing the same, in which the number of photolithographic processes can be reduced in the manufacture of an active substrate, and the manufacturing cost can be decreased. In a bottom gate type TFT substrate, a transparent conductive film 16 in the same layer as a pixel electrode 3 is used as a bottom layer, said pixel electrode 3 having said gate electrode 4 on main surface of an insulating substrate 1, and a laminated electrode film with a metal film 26 superimposed on a top layer thereof, and said pixel electrode 3 is used as the transparent conductive film 16.
摘要翻译：本发明提供一种图像显示单元及其制造方法，其中在有源基板的制造中可以减少光刻工艺的数量，并且可以降低制造成本。在底栅型TFT基板中，与像素电极3同层的透明导电膜16用作底层，所述像素电极3在绝缘基板1的主表面上具有所述栅电极4，层叠电极膜，其上叠置有金属膜26，并且所述像素电极3用作透明导电膜16。

5. 发明授权

US07924355B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US07924355B2
公开(公告)日：2011-04-12
申请号：US12153508
申请日：2008-05-20
申请人： Mieko Matsumura , Toshio Miyazawa , Takeshi Sato , Yoshiaki Toyota
发明人： Mieko Matsumura , Toshio Miyazawa , Takeshi Sato , Yoshiaki Toyota
IPC分类号： G02F1/1343 , G02F1/1335 , G02F1/13 , H01L33/08
CPC分类号： G02F1/134363 , G02F1/13439 , G02F1/136213
摘要： Three layers are formed on a TFT substrate SUB 100. The three layers include a first transparent electrode PSL1 131, a second transparent electrode CSL 127 and a third transparent electrode PSL2 132, all of which are laminated in parallel to the substrate surface. Two auxiliary capacitances to a liquid crystal capacitance are formed between the first transparent electrode PSL1 131 and the second transparent electrode CSL 127 and between the second transparent electrode CSL 127 and the third transparent electrode PSL2 132.
摘要翻译：三层形成在TFT基板SUB100上。三层包括第一透明电极PSL1 131，第二透明电极CSL 127和第三透明电极PSL2 132，它们均与基板表面平行地层叠。在第一透明电极PSL1 131和第二透明电极CSL 127之间以及第二透明电极CSL 127和第三透明电极PSL2 132之间形成液晶电容的两个辅助电容。

6. 发明申请

US20090104737A1 METHOD FOR MANUFACTURING TFT SUBSTRATE 有权
标题翻译：制造TFT基板的方法
公开(公告)号：US20090104737A1
公开(公告)日：2009-04-23
申请号：US12251486
申请日：2008-10-15
申请人： Takeshi Sato , Yoshiaki Toyota
发明人： Takeshi Sato , Yoshiaki Toyota
IPC分类号： H01L21/84
CPC分类号： H01L27/1288 , H01L27/1255 , H01L29/4908
摘要： To provide a method for manufacturing a TFT substrate in which a channel length can be stably formed while the number of masks is reduced, and a method for manufacturing a TFT substrate which can individually control impurity concentrations for channels of an n-type TFT and a p-type TFT without increasing the number of masks. A method for manufacturing a TFT substrate includes processing a gate of the n-type TFT, a gate of the p-type TFT, and an upper capacitor electrode by using a half-tone mask instead of some of normal masks to reduce the number of masks, and changing impurity concentrations of semiconductor films located in regions which become a channel of the n-type TFT, a source and a drain of the n-type TFT, a channel of the p-type TFT, a source and a drain of the p-type TFT, and an lower capacitor electrode, by using a pattern of the half-tone mask and a normal mask.
摘要翻译：为了提供一种制造可以稳定地形成通道长度并减少掩模数量的TFT基板的方法，以及可单独地控制n型TFT和 p型TFT，而不增加掩模数量。一种TFT基板的制造方法，其特征在于，使用半色调掩模而不是一般的掩模来对n型TFT的栅极，p型TFT的栅极和上层电容电极进行处理，以减少掩模和改变位于成为n型TFT的沟道的区域中的半导体膜的杂质浓度，n型TFT的源极和漏极，p型TFT的沟道，源极和漏极 p型TFT和下电容器电极，通过使用半色调掩模和正常掩模的图案。

7. 发明申请

US20080316385A1 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US20080316385A1
公开(公告)日：2008-12-25
申请号：US12153508
申请日：2008-05-20
申请人： Mieko Matsumura , Toshio Miyazawa , Takeshi Sato , Yoshiaki Toyota
发明人： Mieko Matsumura , Toshio Miyazawa , Takeshi Sato , Yoshiaki Toyota
IPC分类号： G02F1/1343 , G02F1/133
CPC分类号： G02F1/134363 , G02F1/13439 , G02F1/136213
摘要： Three layers are formed on a TFT substrate SUB 100. The three layers include a first transparent electrode PSL1 131, a second transparent electrode CSL 127 and a third transparent electrode PSL2 132, all of which are laminated in parallel to the substrate surface. Two auxiliary capacitances to a liquid crystal capacitance are formed between the first transparent electrode PSL1 131 and the second transparent electrode CSL 127 and between the second transparent electrode CSL 127 and the third transparent electrode PSL2 132.
摘要翻译：三层形成在TFT基板SUB100上。三层包括第一透明电极PSL1 131，第二透明电极CSL 127和第三透明电极PSL2 132，它们均与基板表面平行地层叠。在第一透明电极PSL1 131和第二透明电极CSL 127之间以及第二透明电极CSL 127和第三透明电极PSL2 132之间形成液晶电容的两个辅助电容。

8. 发明申请

US20070252145A1 IMAGE DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：图像显示装置及其制造方法
公开(公告)号：US20070252145A1
公开(公告)日：2007-11-01
申请号：US11741272
申请日：2007-04-27
申请人： Yoshiaki Toyota , Takeshi Sato , Mieko Matsumura
发明人： Yoshiaki Toyota , Takeshi Sato , Mieko Matsumura
IPC分类号： H01L29/04
CPC分类号： H01L27/1288 , H01L27/124 , H01L27/1255 , H01L27/326 , H01L27/3276 , H01L29/4908 , H01L2227/323
摘要： An image display device of reduced cost is provided. A plurality of gate lines, a plurality of signal lines formed to cross the gate lines in a matrix fashion, and a plurality of thin-film transistors are formed on an insulating substrate, and the plurality of gate lines are laminated electrodes. The plurality of thin-film transistors are configured of transistors of two types of an n-channel conductivity type and a p-channel conductivity type. Gate electrodes of thin-film transistors of one type are laminated electrodes of the same configuration as the gate lines, and gate electrodes of thin-film transistors of the other type are configured of electrodes of the same layer as bottom electrodes of the gate lines.
摘要翻译：提供了一种降低成本的图像显示装置。多个栅极线，以矩阵方式与栅极线交叉的多个信号线和多个薄膜晶体管形成在绝缘基板上，并且多个栅极线是叠层电极。多个薄膜晶体管由n沟道导电型和p沟道导电型两种晶体管构成。一种类型的薄膜晶体管的栅电极是与栅极线相同结构的层叠电极，另一种类型的薄膜晶体管的栅电极由与栅极线的底电极相同的层的电极构成。

9. 发明授权

US07642141B2 Manufacturing method for display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US07642141B2
公开(公告)日：2010-01-05
申请号：US12155204
申请日：2008-05-30
申请人： Yoshiaki Toyota , Takeshi Sato
发明人： Yoshiaki Toyota , Takeshi Sato
IPC分类号： H01L21/786
CPC分类号： H01L27/1251 , H01L27/1214 , H01L27/1288
摘要： A manufacturing method for a display device having a first conductive type thin film transistor and a second conductive type thin film transistor, comprising the steps of: in formation regions for a first conductive type thin film transistor and a second conductive type thin film transistor forming a semiconductor layer, a first insulating film covering the semiconductor layer and a gate electrode disposed on the first insulating film so as to intersect the semiconductor layer, on substrate having first conductive type impurity regions on both outer sides of a channel region of the semiconductor layer below the gate electrode forming a second insulating film, in the second insulating film and the first insulating film forming a contact hole for a drain electrode and a source electrode, in the formation region for the second conductive type thin film transistor forming electrodes and a second conductive type impurity region.
摘要翻译：一种具有第一导电型薄膜晶体管和第二导电型薄膜晶体管的显示装置的制造方法，包括以下步骤：在第一导电型薄膜晶体管和第二导电型薄膜晶体管的形成区域中形成半导体层的半导体层的沟道区域的两个外侧的具有第一导电型杂质区域的基板上，覆盖半导体层的第一绝缘膜和设置在第一绝缘膜上的栅电极，以与半导体层相交; 所述栅电极在所述第二绝缘膜和所述第一绝缘膜中形成第二绝缘膜，所述第一绝缘膜在所述第二导电型薄膜晶体管形成电极的形成区域中形成用于漏极和源电极的接触孔，并且所述第二导电型杂质区。

10. 发明授权

US08242505B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08242505B2
公开(公告)日：2012-08-14
申请号：US12003462
申请日：2007-12-26
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L27/127 , H01L27/12 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.
摘要翻译：提供了一种用于提高像素的开口率的显示装置。在显示装置中，透明氧化物层，绝缘膜和导电层依次层叠在基板上的像素区域上，导电层具有与栅极信号线连接的薄膜晶体管的栅电极，透明氧化物层的除了栅电极正下方的沟道区域以外的透明氧化物层的区域被转换为导电区域，源极信号线，连接到源极信号线的薄膜晶体管的源极区域部分像素电极和连接到像素电极的薄膜晶体管的漏区部分由导电区域形成。

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