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    • 7. 发明申请
    • Boosting Switching regulator
    • 升压开关稳压器
    • US20080203986A1
    • 2008-08-28
    • US12012719
    • 2008-02-05
    • Takeshi Nakatani
    • Takeshi Nakatani
    • G05F1/44
    • H02M3/156H02M2003/078
    • When a boosting operation stops, it is ensured that a boosting switching regulator does not output an output voltage. When a high signal is applied to the gate of a PMOS transistor Q1 to turn off the transistor Q1, a higher voltage of an input voltage VDD and an output voltage VOUT is supplied to a buffer 171 as a supply voltage, and the higher voltage is applied to the gate of the transistor Q1 by the buffer 171. As a result, the transistor Q1 can be surely turned off. Hence, when the boosting operation by the boosting switching regulator stops, the transistor Q1 that outputs the output voltage VOUT can be surely turned off. Also because the voltage based on the input voltage VDD is applied to the back gate of the transistor Q1 by the switch 3, the parasitic bipolar transistor caused by the transistor Q1 is not turned on.
    • 当升压操作停止时,确保升压开关稳压器不输出输出电压。 当高信号被施加到PMOS晶体管Q 1的栅极以截止晶体管Q1时,输入电压VDD和输出电压VOUT的较高电压被提供给作为电源电压的缓冲器171,并且较高 缓冲器171对晶体管Q 1的栅极施加电压。 结果,可以确实地关闭晶体管Q 1。 因此,当升压开关调节器的升压操作停止时,输出电压VOUT的晶体管Q 1可以被确定地关断。 此外,由于通过开关3将基于输入电压VDD的电压施加到晶体管Q 1的背栅极,所以由晶体管Q 1引起的寄生双极晶体管不导通。