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1. 发明申请

US20080067431A1 PATTERN WRITING APPARATUS USING CHARGED PARTICLE BEAM, AND PROGRAM-RECORDED READABLE RECORDING MEDIUM 有权
标题翻译：使用充电颗粒光束的图案书写装置和程序记录的可读记录介质
公开(公告)号：US20080067431A1
公开(公告)日：2008-03-20
申请号：US11840761
申请日：2007-08-17
申请人： Tomoyuki Horiuchi , Takeshi Kurohori
发明人： Tomoyuki Horiuchi , Takeshi Kurohori
IPC分类号： G21K5/04
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/78 , H01J37/3174 , Y10S430/143
摘要： A charged particle beam pattern writing apparatus includes an input part for inputting a predetermined command, a check part for checking a state of a predetermined function used for pattern writing using a charged particle beam, based on the predetermined command, and an output part for outputting the state of the predetermined function which has been checked.
摘要翻译：带电粒子束图案写入装置包括用于输入预定命令的输入部分，用于根据预定命令用于使用带电粒子束检查用于图案写入的预定功能的状态的检查部分和用于输出的输出部分已经检查的预定功能的状态。

2. 发明授权

US07605383B2 Pattern writing apparatus using charged particle beam, and program-recorded readable recording medium 有权
标题翻译：使用带电粒子束的图案写入装置，以及程序记录的可读记录介质
公开(公告)号：US07605383B2
公开(公告)日：2009-10-20
申请号：US11840761
申请日：2007-08-17
申请人： Tomoyuki Horiuchi , Takeshi Kurohori
发明人： Tomoyuki Horiuchi , Takeshi Kurohori
IPC分类号： G21K5/00 , G03F9/00 , G06F19/00
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/78 , H01J37/3174 , Y10S430/143
摘要： A charged particle beam pattern writing apparatus includes an input part for inputting a predetermined command, a check part for checking a state of a predetermined function used for pattern writing using a charged particle beam, based on the predetermined command, and an output part for outputting the state of the predetermined function which has been checked.
摘要翻译：带电粒子束图案写入装置包括用于输入预定命令的输入部分，用于根据预定命令用于使用带电粒子束检查用于图案写入的预定功能的状态的检查部分和用于输出的输出部分已经检查的预定功能的状态。

3. 发明授权

US07705327B2 Beam shot position correction coefficient computation/updating technique for ultrafine pattern fabrication using variable shaped beam lithography 有权
标题翻译：使用可变形光束光刻的超微图案制造的光束位置校正系数计算/更新技术
公开(公告)号：US07705327B2
公开(公告)日：2010-04-27
申请号：US11850904
申请日：2007-09-06
申请人： Tomoyuki Horiuchi , Noriaki Nakayamada , Junichi Suzuki , Takeshi Kurohori
发明人： Tomoyuki Horiuchi , Noriaki Nakayamada , Junichi Suzuki , Takeshi Kurohori
IPC分类号： H01J37/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/20292 , H01J2237/3045
摘要： A charged-particle beam lithography apparatus includes a charged-particle beam irradiation unit, a deflector which deflects the charged particle beam, a stage which disposes thereon a workpiece for pattern writing and a plurality of marks being regularly laid out in an entire area substantially equal to a pattern writing region of the workpiece, a measurement unit for measuring positions of the marks on the stage through scanning of the charged-particle beam by the deflector, a coefficient calculation unit which uses an approximation equation for correction of a position deviation occurring due to a hardware configuration of the apparatus to perform the fitting of a position deviation amount of each mark by a coordinate system of the apparatus to thereby calculate more than one coefficient of the fitting-applied approximation equation, and a storage unit which performs overwrite-storing whenever the coefficient calculation unit calculates the coefficient.
摘要翻译：带电粒子束光刻设备包括带电粒子束照射单元，使带电粒子束偏转的偏转器，在其上放置用于图案书写的工件的阶段，以及在基本相等的整个区域中定期布置的多个标记涉及到工件的图案写入区域的测量单元，用于通过偏转器扫描带电粒子束来测量台架上的标记位置的测量单元，使用近似方程校正出现的位置偏差的系数计算单元涉及一种装置的硬件结构，用于通过装置的坐标系进行每个标记的位置偏移量的拟合，从而计算拟合拟合近似方程的多于一个系数;以及存储单元，其执行重写存储每当系数计算单元计算系数时。

4. 发明授权

US08461555B2 Charged particle beam writing method and charged particle beam writing apparatus 有权
标题翻译：带电粒子束写入方法和带电粒子束写入装置
公开(公告)号：US08461555B2
公开(公告)日：2013-06-11
申请号：US12706207
申请日：2010-02-16
申请人： Takeshi Kurohori
发明人： Takeshi Kurohori
IPC分类号： G03F7/20 , G21K5/04
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： Based on the pattern writing data input to an input unit 20, a control computer 19 divides a predetermined region on which writing is effected by an electron beam 54 into smaller regions each consisting of one or the same number of frames and determines the areal density of a pattern to be written on each smaller region. A drift compensation time interval determining unit 32 then determines the amount of change in pattern areal density between each two adjacent smaller regions, and groups the smaller regions in the predetermined region into region groups depending on whether or not the amount of change is greater than a predetermined value. A time profile for compensating for the drift of the electron beam 54 is then determined for each region group.
摘要翻译：基于输入到输入单元20的写入数据的图案，控制计算机19将由电子束54进行写入的预定区域划分成由一个或相同数量的帧组成的较小区域，并且确定面密度在每个较小的区域写入一个模式。然后，漂移补偿时间间隔确定单元32确定每两个相邻较小区域之间的图案面密度的变化量，并且根据变化量是否大于一组，将预定区域中的较小区域组合成区域组预定值。然后针对每个区域组确定用于补偿电子束54的漂移的时间曲线。

5. 发明申请

US20080078947A1 BEAM SHOT POSITION CORRECTION COEFFICIENT COMPUTATION/UPDATING TECHNIQUE FOR ULTRAFINE PATTERN FABRICATION USING VARIABLE SHAPED BEAM LITHOGRAPHY 有权
标题翻译：波束拍摄位置校正系统计算/更新技术，用于使用可变形波束光刻的超声波图案制作
公开(公告)号：US20080078947A1
公开(公告)日：2008-04-03
申请号：US11850904
申请日：2007-09-06
申请人： Tomoyuki HORIUCHI , Noriaki Nakayamada , Junichi Suzuki , Takeshi Kurohori
发明人： Tomoyuki HORIUCHI , Noriaki Nakayamada , Junichi Suzuki , Takeshi Kurohori
IPC分类号： H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/20292 , H01J2237/3045
摘要： A charged-particle beam lithography apparatus includes a charged-particle beam irradiation unit, a deflector which deflects the charged particle beam, a stage which disposes thereon a workpiece for pattern writing and a plurality of marks being regularly laid out in an entire area substantially equal to a pattern writing region of the workpiece, a measurement unit for measuring positions of the marks on the stage through scanning of the charged-particle beam by the deflector, a coefficient calculation unit which uses an approximation equation for correction of a position deviation occurring due to a hardware configuration of the apparatus to perform the fitting of a position deviation amount of each mark by a coordinate system of the apparatus to thereby calculate more than one coefficient of the fitting-applied approximation equation, and a storage unit which performs overwrite-storing whenever the coefficient calculation unit calculates the coefficient.
摘要翻译：带电粒子束光刻设备包括带电粒子束照射单元，使带电粒子束偏转的偏转器，在其上放置用于图案书写的工件的阶段，以及在基本相等的整个区域中定期布置的多个标记涉及到工件的图案写入区域的测量单元，用于通过偏转器扫描带电粒子束来测量台架上的标记位置的测量单元，使用近似方程校正出现的位置偏差的系数计算单元涉及一种装置的硬件结构，用于通过装置的坐标系进行每个标记的位置偏移量的拟合，从而计算拟合拟合近似方程的多于一个系数;以及存储单元，其执行重写存储每当系数计算单元计算系数时。

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