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    • 1. 发明授权
    • Transmission of musical tone information
    • 传播音乐信息
    • US06525253B1
    • 2003-02-25
    • US09337958
    • 1999-06-22
    • Takeshi KikuchiYuji Koike
    • Takeshi KikuchiYuji Koike
    • G10H700
    • G10H1/0066G10H2240/295G10H2240/305G10H2240/315
    • A musical tone information transmitting apparatus that can efficiently transmit musical tone information comprises: a device for inputting musical tone information; a plurality of processing units which jointly process the musical tone information from said input means in distributed processing; a packet generator for measuring an amount of said musical tone information distributedly processed by the plurality of processing units at a predetermined cycle, for extracting and packetizing a predetermined amount of the musical tone information into a first packet when the amount of the musical tone information is greater than the predetermined amount and for further packetizing next musical tone information after said predetermined cycle is lapsed from the time corresponding to the last musical tone information of said first packet; and a device for transmitting said packets generated by said packet generator.
    • 能够有效地发送乐音信息的乐音信息发送装置包括:用于输入乐音信息的装置; 多个处理单元,其以分布式处理联合地处理来自所述输入装置的乐音信息; 分组发生器,用于以预定周期测量由所述多个处理单元分配处理的所述乐音信息的量,用于当所述乐音信息的量为音乐信息的数量时将预定量的所述乐音信息提取和分组为第一分组 大于预定量,并且在从与所述第一分组的最后乐曲信息相对应的时间过去所述预定周期之后进一步分组下一个音调信息; 以及用于发送由所述分组生成器生成的所述分组的装置。
    • 5. 发明申请
    • METHOD FOR GLYCOSYLATING AND SEPARATING PLANT FIBER MATERIAL
    • 用于糖化和分离植物纤维材料的方法
    • US20110105744A1
    • 2011-05-05
    • US12995809
    • 2009-06-02
    • Shinichi TakeshimaTakeshi Kikuchi
    • Shinichi TakeshimaTakeshi Kikuchi
    • C07H1/08
    • C13K1/02
    • The invention relates to a method for hydrolyzing a plant fiber material and producing and separating a saccharide including glucose. The method of the invention includes a hydrolysis process of using a cluster acid catalyst in a pseudo-molten state to hydrolyze cellulose contained in the plant fiber material and produce glucose. In the hydrolysis process, the cluster acid catalyst and a first amount of the plant fiber material that increases a viscosity of the cluster acid catalyst in a pseudo-molten state when added to the cluster acid catalyst in a pseudo-molten state are heated and mixed, and a second amount of the plant fiber material is then further added when the decrease in viscosity of the heated mixture occurs.
    • 本发明涉及水解植物纤维材料并生产和分离包括葡萄糖的糖类的方法。 本发明的方法包括使用假熔融状态的簇酸催化剂水解纤维素中所含的纤维素并产生葡萄糖的水解方法。 在水解过程中,将加入到熔融状态的聚氨酯催化剂中的模拟熔融状态下的聚氨酯酸催化剂的粘度增加的簇酸催化剂和第一量的植物纤维材料加热混合 然后当加热的混合物的粘度降低时,进一步添加第二量的植物纤维材料。
    • 6. 发明申请
    • Nonvolatile semiconductor memory and method of manufacturing the same
    • 非易失性半导体存储器及其制造方法
    • US20090090962A1
    • 2009-04-09
    • US12285167
    • 2008-09-30
    • Takeshi Kikuchi
    • Takeshi Kikuchi
    • H01L29/792
    • H01L29/792H01L27/11568H01L29/66545H01L29/6656
    • A nonvolatile semiconductor memory device includes: a semiconductor substrate; a first gate electrode formed on the semiconductor substrate through a gate insulating film; a second gate electrode formed in a side direction of the first gate electrode and electrically insulated from the first gate electrode; and an insulating film formed at least between the semiconductor substrate and the second gate electrode to trap electric charge, as an electric charge trapping film. The first gate electrode comprises a lower portion contacting the gate insulating film and an upper portion above the lower portion of the first gate electrode, and a distance between the upper portion of the first gate electrode and the second gate electrode is longer than a distance between the lower portion of the first gate electrode and the second gate electrode.
    • 非易失性半导体存储器件包括:半导体衬底; 通过栅极绝缘膜形成在所述半导体衬底上的第一栅电极; 第二栅电极,形成在所述第一栅电极的侧方并与所述第一栅极电绝缘; 以及至少形成在半导体衬底和第二栅电极之间以将电荷捕获作为电荷捕获膜的绝缘膜。 第一栅电极包括接触栅极绝缘膜的下部和在第一栅电极的下部上方的上部,并且第一栅电极的上部与第二栅电极之间的距离长于 第一栅电极和第二栅电极的下部。
    • 7. 发明申请
    • Medical Catheter Tube and Method of Producing the Same
    • 医疗导管及其制造方法
    • US20090012500A1
    • 2009-01-08
    • US11816094
    • 2006-02-06
    • Takahiro MurataTsuyoshi MihayashiAtsushi OgawaTakeshi Kikuchi
    • Takahiro MurataTsuyoshi MihayashiAtsushi OgawaTakeshi Kikuchi
    • A61M25/00
    • A61M25/0012A61M25/001A61M25/0084A61M25/10A61M37/00
    • The medical catheter tube of the present invention integrally has an inner layer tube; reinforcement material layers formed by placing element wires on the inner layer tube; a marker; and an outer layer tube. The element wires, which are first and the other element wires, for forming the reinforcement material layers are synthetic resin element wires and/or metallic element wires, the first element wires are placed in the axis direction of the catheter to form the first reinforcement material layer, and the other element wires are wound in a coil form on the first reinforcement material layer, in the circumferential direction of the catheter, to cover the first reinforcement material layer. The marker is flexible to deformation. Because of the presence of the reinforcement material layer and the outer layer tube, flexural rigidity from a base section to a head section is reduced in a stepped or continuous manner.
    • 本发明的医疗导管一体地具有内层管, 通过将元件线放置在内层管上形成的增强材料层; 一个标记 和外层管。 用于形成加强材料层的作为第一和另外的元件线的元件线是合成树脂元件线和/或金属元件线,第一元件线放置在导管的轴线方向上以形成第一增强材料 层,并且其它元件线在导管的圆周方向上以线圈形式缠绕在第一增强材料层上,以覆盖第一增强材料层。 标记灵活变形。 由于增强材料层和外层管的存在,从基部到头部的弯曲刚度以阶梯式或连续的方式减小。
    • 10. 发明授权
    • Nonvolatile semiconductor memory and method of manufacturing the same
    • 非易失性半导体存储器及其制造方法
    • US08114742B2
    • 2012-02-14
    • US13067141
    • 2011-05-11
    • Takeshi Kikuchi
    • Takeshi Kikuchi
    • H01L21/8247
    • H01L29/792H01L27/11568H01L29/66545H01L29/6656
    • A method of forming a nonvolatile memory device which includes forming a first gate electrode on a gate insulating film formed on a semiconductor substrate. The first gate electrode having a lower portion formed on the gate insulating film and an upper portion having a gate length less than that of the lower portion formed on the lower portion. A spacer is formed contacting surfaces of the upper and lower portions, wherein a length of the spacer and the upper portion equals the length of the lower portion. An electric charge trapping film covers a portion of the semiconductor substrate, a surface of the lower portion, and a surface of the spacer. A second gate electrode is then formed in a side direction of the first gate electrode and electrically insulated from the first gate electrode by the electric charge trapping film. The second gate electrode has a distance between the upper portion of the first gate electrode thai is greater than a distance between the lower portion and is separated from the upper portion of the first gate electrode by the electric charge trapping film and the spacer.
    • 一种形成非易失性存储器件的方法,包括在形成在半导体衬底上的栅极绝缘膜上形成第一栅电极。 所述第一栅电极具有形成在所述栅极绝缘膜上的下部,所述第一栅电极的栅极长度小于形成在所述下部的下部的栅极长度。 形成间隔件,接触上部和下部的表面,其中间隔件和上部的长度等于下部的长度。 电荷捕获膜覆盖半导体衬底的一部分,下部的表面和间隔物的表面。 然后在第一栅电极的侧面方向上形成第二栅电极,并通过电荷捕获膜与第一栅极电绝缘。 第二栅极电极具有大于第一栅极电极的上部之间的距离,并且通过电荷捕获膜和间隔物与第一栅电极的上部分离。