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    • 5. 发明授权
    • Method of preparing bismuth oxide superconducting wire
    • 制备氧化铋超导线的方法
    • US06536096B2
    • 2003-03-25
    • US08167581
    • 1993-12-15
    • Kenichi SatoNobuhiro ShibutaHidehito MukaiTakeshi HikataMunetsugu UeyamaTakeshi Kato
    • Kenichi SatoNobuhiro ShibutaHidehito MukaiTakeshi HikataMunetsugu UeyamaTakeshi Kato
    • H01L3924
    • H01L39/248C04B35/4521C04B35/4525Y10T29/49014
    • Powder of not more than 1 &mgr;m in mean particle diameter is prepared to contain a mixture of superconducting phases mainly composed of 2212 phases of Bi—Sr—Ca—Cu or (Bi, Pb)—Sr—Ca—Cu and non-superconducting phases which is obtained by calcining and pulverizing raw material powder at least once, this powder is heat treated at a high temperature and thereafter coated with a metal to prepare a round wire by deformation processing, thereafter a tape type or flat type wire is prepared by deformation processing, then the wire is heat treated under conditions for allowing phase transformation of the 2212 phases of main superconducting phases to 2223 phases with facilitation of grain growth, thereafter the as-formed 2223 phases are highly densified by deformation processing or pressurization, and the wire is again heat treated so that the 2223 phases are strongly bonded with each other and the non-superconducting phases are finely dispersed. Thus, a bismuth oxide superconducting wire having a high critical current density is obtained.
    • 制备平均粒径不超过1um的粉末,其含有主要由2212相的Bi-Sr-Ca-Cu或(Bi,Pb)-Sr-Ca-Cu和非超导相的超导相的混合物 其通过将原料粉末煅烧和粉碎至少一次而获得,该粉末在高温下进行热处理,然后用金属涂覆以通过变形处理制备圆形线,然后通过变形来制备带状或扁平型线 然后在使主要超导相的2212相相变到2223相的条件下进行热处理,促进晶粒生长,此后形成的2223相通过变形加工或加压而高度致密化,并且导线 再次热处理使得2223相彼此牢固地结合,并且非超导相被细分散。 因此,获得具有高临界电流密度的氧化铋超导线。
    • 8. 发明授权
    • Oscillator
    • 振荡器
    • US08653900B2
    • 2014-02-18
    • US12921668
    • 2009-03-13
    • Kenichi SatoTomoaki Yamamoto
    • Kenichi SatoTomoaki Yamamoto
    • H03B5/36
    • H03B5/36H03K5/003
    • There is provided an oscillator using a high-frequency crystal resonator which can satisfy the drive level needed for the crystal resonator and expand a variable frequency range. An oscillator having an oscillation circuit CC for oscillating the resonator SS is provided with a limiter circuit LM1 as a load of the resonator SS which is inductive and is a load circuit for limiting an oscillation amplitude. According to this configuration, the action of the limiter circuit LM1 allows satisfaction of the drive level needed for the crystal resonator and expansion of the variable frequency range.
    • 提供了使用能够满足晶体谐振器所需的驱动电平并扩大可变频率范围的高频晶体谐振器的振荡器。 具有用于振荡谐振器SS的振荡电路CC的振荡器设置有限制电路LM1作为感应式谐振器SS的负载,并且是用于限制振荡幅度的负载电路。 根据该结构,限幅电路LM1的作用使得满足晶体谐振器所需的驱动电平和扩大可变频率范围。
    • 9. 发明申请
    • PHOTODIODE ARRAY
    • 光斑阵列
    • US20130270666A1
    • 2013-10-17
    • US13881949
    • 2011-10-24
    • Kenichi SatoKazuhisa YamamuraShinji Ohsuka
    • Kenichi SatoKazuhisa YamamuraShinji Ohsuka
    • H01L27/144
    • H01L27/1446H01L27/146H01L27/14643H01L31/02027
    • This photodiode array 10 includes quenching resistors 7 which are connected in series to respective avalanche photodiodes APDs, a peripheral wiring WL which surrounds a region in which the plurality of avalanche photodiodes APDs are formed, and a plurality of relay wirings 8 which are electrically connected to the peripheral wiring WL, so as to respectively connect at least two places of the peripheral wiring WL. One of an anode and a cathode of each avalanche photodiode APD is electrically connected to any one of the relay wirings 8 via the quenching resistor 7, and the other of the anode and the cathode of each avalanche photodiode APD is electrically connected to another electrode 6 provided on a semiconductor substrate.
    • 该光电二极管阵列10包括与相应的雪崩光电二极管APD串联连接的淬火电阻器7,围绕形成有多个雪崩光电二极管APD的区域的外围布线WL,以及多个继电器布线8, 周边布线WL,以分别连接外围布线WL的至少两个位置。 每个雪崩光电二极管APD的阳极和阴极之一经由淬火电阻7与继电器布线8中的任何一个电连接,并且每个雪崩光电二极管APD的阳极和阴极中的另一个电连接到另一个电极6 设置在半导体基板上。