专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08394569B2 Resist composition for immersion lithography and method for forming resist pattern 有权
标题翻译：浸渍光刻用抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08394569B2
公开(公告)日：2013-03-12
申请号：US12278376
申请日：2007-02-05
申请人： Makiko Irie , Takeshi Iwai
发明人： Makiko Irie , Takeshi Iwai
IPC分类号： G03F7/028 , G03F7/033 , G03F7/038 , G03F7/26
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/2041
摘要： A resist composition for immersion lithography of the present invention includes a resin component (A) which exhibits changed alkali solubility under the action of acid; and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a resin (A1) containing a fluorine atom and no acid-dissociable group, and a resin (A2) containing a structural unit (a′) derived from an acrylic acid and no fluorine atom.
摘要翻译：本发明的浸渍光刻用抗蚀剂组合物包括在酸作用下表现出碱溶性变化的树脂成分（A）以及在曝光时产生酸的酸发生剂成分（B），其中，所述树脂成分（A）含有含有氟原子且不具有酸解离性基团的树脂（A1）和含有结构单元（a）的树脂（A2） '）衍生自丙烯酸而不是氟原子。

2. 发明申请

US20090117490A1 POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN 有权
标题翻译：用于浸润光刻的正极性组合物和形成耐蚀图案的方法
公开(公告)号：US20090117490A1
公开(公告)日：2009-05-07
申请号：US12300760
申请日：2007-04-23
申请人： Kotaro Endo , Makiko Irie , Takeshi Iwai , Yoshiyuki Utsumi , Yasuhiro Yoshii , Tsuyoshi Nakamura
发明人： Kotaro Endo , Makiko Irie , Takeshi Iwai , Yoshiyuki Utsumi , Yasuhiro Yoshii , Tsuyoshi Nakamura
IPC分类号： G03F7/027 , G03F7/26
CPC分类号： G03F7/0395 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A positive resist composition for immersion lithography of the present invention includes a resin component (A) which exhibits increased alkali solubility under the action of acid; and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a cyclic main chain resin (A1) containing a fluorine atom and no acid-dissociable group, and a resin (A2) containing a structural unit (a) derived from an acrylic acid and no fluorine atom.
摘要翻译：本发明的浸渍光刻用正型抗蚀剂组合物包括在酸作用下表现出增加的碱溶性的树脂组分（A）以及在曝光时产生酸的酸发生剂成分（B），其中，所述树脂成分（A）含有含有氟原子且不具有酸解离性基团的环状主链状树脂（A1）和含有结构式单元（a）衍生自丙烯酸而不含氟原子。

3. 发明申请

US20090317741A1 COMPOUND, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 审中-公开
标题翻译：化合物，酸产生剂，抗蚀剂组合物和形成耐力图案的方法
公开(公告)号：US20090317741A1
公开(公告)日：2009-12-24
申请号：US12373287
申请日：2007-07-03
申请人： Takeshi Iwai , Makiko Irie
发明人： Takeshi Iwai , Makiko Irie
IPC分类号： G03F7/20 , C07D333/52 , G03F7/004
CPC分类号： G03F7/0045 , C07D333/76 , G03F7/0397
摘要： There is provided a resist composition which includes a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid, and an acid generator component (B) which generates an acid upon exposure, wherein the acid generator component (B) comprises an acid generator composed of a compound represented by the general formula (b1-2) shown below:(wherein, R41, R42, and R43 each independently represents an alkyl group, an acetyl group, an alkoxy group, a carboxy group, or a hydroxyalkyl group; n1 represents an integer of 0 to 3; n2 and n3 each independently represents an integer of 0 to 3; not all of n1, n2, and n3 are simultaneously 0; and X− represents an anion).
摘要翻译：提供了一种抗蚀剂组合物，其包含在酸性作用下在碱性显影液中表现出改变的溶解性的基础组分（A）和暴露时产生酸的酸产生剂组分（B），其中酸产生剂组分）包含由下述通式（b1-2）表示的化合物组成的酸发生剂：（其中，R41，R42和R43各自独立地表示烷基，乙酰基，烷氧基，羧基，或羟基烷基; n1表示0〜3的整数，n2和n3各自独立地表示0〜3的整数，n1，n2，n3全部不为全部，X表示阴离子）。

4. 发明申请

US20090269701A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：正电阻组合物和形成电阻图案的方法
公开(公告)号：US20090269701A1
公开(公告)日：2009-10-29
申请号：US12427547
申请日：2009-04-21
申请人： Makiko Irie , Takeshi Iwai
发明人： Makiko Irie , Takeshi Iwai
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0397
摘要： A positive resist composition including a resin component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the resin component (A) including a structural unit (a0) represented by general formula (a0) (wherein R represents a hydrogen atom, a lower alkyl group of 1 to 5 carbon atoms or a halogenated lower alkyl group of 1 to 5 carbon atoms; Q represents a divalent linking group containing a nitrogen atom or an oxygen atom; R6 represents a lower alkyl group of 1 to 5 carbon atoms or an alkoxy group of 1 to 5 carbon atoms; p represents an integer of 1 to 3; and q represents an integer of 0 to 2) and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group exclusive of groups that exhibit aromaticity.
摘要翻译：一种正型抗蚀剂组合物，包括在酸作用下在碱性显影液中显示出增加的溶解性的树脂组分（A）和暴露时产生酸的酸产生剂组分（B），所述树脂组分（A）包括结构单元 a0）（其中R表示氢原子，1〜5个碳原子的低级烷基或1〜5个碳原子的卤代低级烷基）; Q表示含有氮原子的二价连接基团或氧原子; R 6表示碳原子数1〜5的低级烷基或碳原子数1〜5的烷氧基，p表示1〜3的整数，q表示0〜2的整数），结构式单元（a1）衍生自含有酸解离的溶解抑制基团的丙烯酸酯，不包括具有芳香性的基团。

5. 发明授权

US07799507B2 Positive resist composition for immersion lithography and method for forming resist pattern 有权
标题翻译：用于浸渍光刻的正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07799507B2
公开(公告)日：2010-09-21
申请号：US12300760
申请日：2007-04-23
申请人： Kotaro Endo , Makiko Irie , Takeshi Iwai , Yoshiyuki Utsumi , Yasuhiro Yoshii , Tsuyoshi Nakamura
发明人： Kotaro Endo , Makiko Irie , Takeshi Iwai , Yoshiyuki Utsumi , Yasuhiro Yoshii , Tsuyoshi Nakamura
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0395 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A positive resist composition for immersion lithography of the present invention includes a resin component (A) which exhibits increased alkali solubility under the action of acid; and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a cyclic main chain resin (A1) containing a fluorine atom and no acid-dissociable group, and a resin (A2) containing a structural unit (a) derived from an acrylic acid and no fluorine atom.
摘要翻译：本发明的浸渍光刻用正型抗蚀剂组合物包括在酸作用下表现出增加的碱溶性的树脂组分（A）以及在曝光时产生酸的酸发生剂成分（B），其中，所述树脂成分（A）含有含有氟原子且不具有酸解离性基团的环状主链状树脂（A1）和含有结构式单元（a）衍生自丙烯酸而不含氟原子。

6. 发明申请

US20100167178A1 Oxime sulfonates and the use thereof as latent acids 审中-公开
标题翻译：肟磺酸盐及其作为潜酸的用途
公开(公告)号：US20100167178A1
公开(公告)日：2010-07-01
申请号：US12308279
申请日：2007-06-15
申请人： Hitoshi Yamato , Toshikage Asakura , Yuichi Nishimae , Takeshi Iwai , Makiko Irie , Kazuhiko Nakayama
发明人： Hitoshi Yamato , Toshikage Asakura , Yuichi Nishimae , Takeshi Iwai , Makiko Irie , Kazuhiko Nakayama
IPC分类号： C07C69/52 , C08F24/00 , C08F228/02 , G03C1/04 , C08F2/46 , G03F5/00 , G03F7/00
CPC分类号： G03F7/0045 , C07C309/00 , C07C2603/18 , C08F20/36 , G03F7/0046 , G03F7/0397
摘要： Compounds of the formula (I), (II) or (III), wherein R1 is for example C1-C18alkylsulfonyl, C1-C10haloalkylsulfonyl, camphorylsulfonyl, phenyl-C1-C3alkylsulfonyl, phenylsulfonyl, naphthylsulfonyl, anthrylsulfonyl, phenanthrylsulfonyl or heteroarylsulfonyl, R′1 is for example phenylenedisulfonyl, R2 is for example CN, C1-C10haloalkyl or C1-C10haloalkyl which is substituted by (IV); Ar1 is for example phenyl optionally substituted by a group of formula (IV); Ar′1 is for example phenylene which optionally is substituted by a group of formula (IV); A1, A2 and A3 independently of each other are for example hydrogen, halogen, CN, or C1-C18alkyl; D2 is for example a direct bond, O, (CO)O, (CO)S, SO2, OSO2 or C1-C18alkylene; or A3 and D2 together form C3-C30cycloalkenyl; or A2 and D2 together with the carbon of the ethylenically unsaturated double bond to which they are attached form C3-C30cycloalkyl; D3 and D4 for example independently of each other are a direct bond, O, S, C1-C18alkylene or C3-C30cycloalkylene provided that at least one of the radicals R2, Ar1 or Ar′1 comprises a group of the formula (IV); are suitable as photolatent acid donors and for the preparation of corresponding polymers to be employed in chemically amplified photoresists.
摘要翻译：式（I），（II）或（III）的化合物，其中R 1是例如C 1 -C 18烷基磺酰基，C 1 -C 10卤代烷基磺酰基，樟脑磺酰基，苯基-C 1 -C 3烷基磺酰基，苯基磺酰基，萘基磺酰基，蒽基磺酰基，菲基磺酰基或杂芳基磺酰基，R'1 是例如亚苯基二磺酰基，R 2是例如CN，被C 1 -C 10卤代烷基或被（IV）取代的C 1 -C 10卤代烷基; Ar 1是例如任选被式（Ⅳ）基团取代的苯基; Ar 1是例如任选被式（IV）的基团取代的亚苯基; A1，A2和A3彼此独立地是例如氢，卤素，CN或C 1 -C 18烷基; D2例如是直接键合O，（CO）O，（CO）S，SO 2，OSO 2或C 1 -C 18亚烷基; 或A3和D2一起形成C 3 -C 30环烯基; 或A2和D2与它们所连接的烯属不饱和双键的碳一起形成C 3 -C 30环烷基; D3和D4彼此独立地是直接键合O，S，C 1 -C 18亚烷基或C 3 -C 30环烷基，条件是基团R 2，Ar 1或Ar'1中的至少一个包含式（Ⅳ）基团。适合作为光潜酸供体，并用于制备用于化学放大光致抗蚀剂的相应聚合物。

7. 发明申请

US20090042132A1 RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN 有权
标题翻译：用于浸入光刻的耐蚀组合物和形成耐蚀图案的方法
公开(公告)号：US20090042132A1
公开(公告)日：2009-02-12
申请号：US12278376
申请日：2007-02-05
申请人： Makiko Irie , Takeshi Iwai
发明人： Makiko Irie , Takeshi Iwai
IPC分类号： G03C1/675 , G03C1/73 , G03F7/20
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/2041
摘要： A resist composition for immersion lithography of the present invention includes a resin component (A) which exhibits changed alkali solubility under the action of acid; and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a resin (A1) containing a fluorine atom and no acid-dissociable group, and a resin (A2) containing a structural unit (a′) derived from an acrylic acid and no fluorine atom.
摘要翻译：本发明的浸渍光刻用抗蚀剂组合物包括在酸作用下表现出碱溶性变化的树脂成分（A）以及在曝光时产生酸的酸发生剂成分（B），其中，所述树脂成分（A）含有含有氟原子且不具有酸解离性基团的树脂（A1）和含有结构单元（a）的树脂（A2） '）衍生自丙烯酸而不是氟原子。

8. 发明申请

US20100081080A1 POLYMER COMPOUND, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：聚合物化合物，耐蚀组合物和形成耐力图案的方法
公开(公告)号：US20100081080A1
公开(公告)日：2010-04-01
申请号：US12449547
申请日：2008-02-06
申请人： Jun Iwashita , Sho Abe , Makiko Irie , Takeshi Iwai
发明人： Jun Iwashita , Sho Abe , Makiko Irie , Takeshi Iwai
IPC分类号： G03F7/20 , C08F32/08 , C08F24/00 , G03F7/004
CPC分类号： C08F220/28 , C08F220/34 , C08F220/38 , G03F7/0382 , G03F7/0397 , Y10S430/111
摘要： A polymer compound including a structural unit (a0) represented by general formula (a0-1) shown below: wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms; R2 and R3 each independently represents a hydrogen atom, an alkyl group or an alkoxy group, or R2 and R3 may be bonded together to form an alkylene group that may include an oxygen atom or sulfur atom at an arbitrary position, —O— or —S—; R4 and R5 each independently represents a hydrogen atom, an alkyl group that may include an oxygen atom at an arbitrary position, a cycloalkyl group that may include an oxygen atom at an arbitrary position or an alkoxycarbonyl group.
摘要翻译：包含如下所示的由通式（a0-1）表示的结构单元（a0）的高分子化合物：其中R1表示氢原子，1〜5个碳原子的烷基或1〜5个碳原子的氟化烷基; R 2和R 3各自独立地表示氢原子，烷基或烷氧基，或者R 2和R 3可以键合在一起形成任意位置上可以包含氧原子或硫原子的亚烷基，-O-或 - S- R 4和R 5各自独立地表示氢原子，可以包含任意位置的氧原子的烷基，可以包含任意位置的氧原子的环烷基或烷氧基羰基。

9. 发明申请

US20070298615A1 PATTERN FORMING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES 审中-公开
标题翻译：图案形成方法和制造半导体器件的方法
公开(公告)号：US20070298615A1
公开(公告)日：2007-12-27
申请号：US11668679
申请日：2007-01-30
申请人： Nobuyuki Matsuzawa , Atsuhiro Ando , Eriko Matsui , Yuko Yamaguchi , Katsuhisa Kugimiya , Tetsuya Tatsumi , Salam Kazi , Takeshi Iwai , Makiko Irie
发明人： Nobuyuki Matsuzawa , Atsuhiro Ando , Eriko Matsui , Yuko Yamaguchi , Katsuhisa Kugimiya , Tetsuya Tatsumi , Salam Kazi , Takeshi Iwai , Makiko Irie
IPC分类号： H01L21/311
CPC分类号： H01L21/0273 , G03F7/40 , H01L21/28123 , H01L21/32139
摘要： A pattern forming method is provided. The pattern forming method includes a first step of forming a resist pattern including a lactone group-containing skeleton above an etched layer provided on a substrate; a second step of performing plasma processing using a hydrogen-containing gas to lower a glass transition temperature or a softening point of the resist pattern; and a third step of transferring the resist pattern after the plasma processing to the etched layer by etching, and forming the pattern of the etched layer.
摘要翻译：提供了图案形成方法。图案形成方法包括：在设置在基板上的蚀刻层的上方形成含有含内酯基的骨架的抗蚀剂图案的第一工序; 使用含氢气体进行等离子体处理以降低玻璃化转变温度或抗蚀剂图案的软化点的第二步骤; 以及通过蚀刻将等离子体处理后的抗蚀剂图案转印到蚀刻层的第三步骤，以及形成蚀刻层的图案。

10. 发明授权

US08263307B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08263307B2
公开(公告)日：2012-09-11
申请号：US12427547
申请日：2009-04-21
申请人： Makiko Irie , Takeshi Iwai
发明人： Makiko Irie , Takeshi Iwai
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0397
摘要： A positive resist composition including a resin component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the resin component (A) including a structural unit (a0) represented by general formula (a0) (wherein R represents a hydrogen atom, a lower alkyl group of 1 to 5 carbon atoms or a halogenated lower alkyl group of 1 to 5 carbon atoms; Q represents a divalent linking group containing a nitrogen atom or an oxygen atom; R6 represents a lower alkyl group of 1 to 5 carbon atoms or an alkoxy group of 1 to 5 carbon atoms; p represents an integer of 1 to 3; and q represents an integer of 0 to 2) and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group exclusive of groups that exhibit aromaticity.
摘要翻译：一种正型抗蚀剂组合物，包括在酸作用下在碱性显影液中显示出增加的溶解性的树脂组分（A）和暴露时产生酸的酸产生剂组分（B），所述树脂组分（A）包括结构单元 a0）（其中R表示氢原子，1〜5个碳原子的低级烷基或1〜5个碳原子的卤代低级烷基）; Q表示含有氮原子的二价连接基团或氧原子; R 6表示碳原子数1〜5的低级烷基或碳原子数1〜5的烷氧基，p表示1〜3的整数，q表示0〜2的整数），结构式单元（a1）衍生自含有酸解离的溶解抑制基团的丙烯酸酯，不包括具有芳香性的基团。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式