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1. 发明授权

US07660099B2 Case molded capacitor 有权
标题翻译：表壳电容器
公开(公告)号：US07660099B2
公开(公告)日：2010-02-09
申请号：US11856361
申请日：2007-09-17
申请人： Takeshi Imamura , Toshiharu Saito , Satoshi Hosokawa , Toshihisa Miura , Yoshinari Nagata
发明人： Takeshi Imamura , Toshiharu Saito , Satoshi Hosokawa , Toshihisa Miura , Yoshinari Nagata
IPC分类号： H01G4/32 , H01G4/015
CPC分类号： H01G4/224 , H01G2/106 , H01G9/008 , Y02T10/7022
摘要： A case molded capacitor has a metallized film capacitor, a pair of bus bars, a resin-made internal case, molding resin, a metal external case, and a buffer material layer. The bus bars are each connected to respective one of electrodes of the metallized film capacitor. The internal case contains the metallized film capacitor. The metallized film capacitor is submerged with molding resin in the internal case so as to expose parts of the bus bars. The external case contains the internal case and both cases are connected at a connecting part. A buffer material layer is put in a gap made at least at a part between the internal case and the external case.
摘要翻译：壳体电容器具有金属化膜电容器，一对母线，树脂制内部壳体，模制树脂，金属外壳和缓冲材料层。汇流条各自连接到金属化薄膜电容器的相应电极之一。内部壳体包含金属化薄膜电容器。金属化膜电容器在内部壳体中浸入模制树脂，以暴露母线的部分。外壳包含内部外壳，两个外壳均连接在连接部分。将缓冲材料层放置在至少在内部壳体和外部壳体之间的部分处形成的间隙中。

2. 发明申请

US20080068775A1 CASE MOLDED CAPACITOR 有权
标题翻译：壳模电容器
公开(公告)号：US20080068775A1
公开(公告)日：2008-03-20
申请号：US11856361
申请日：2007-09-17
申请人： Takeshi Imamura , Toshiharu Saito , Satoshi Hosokawa , Toshihisa Miura , Yoshinari Nagata
发明人： Takeshi Imamura , Toshiharu Saito , Satoshi Hosokawa , Toshihisa Miura , Yoshinari Nagata
IPC分类号： H01G4/00
CPC分类号： H01G4/224 , H01G2/106 , H01G9/008 , Y02T10/7022
摘要： A case molded capacitor has a metallized film capacitor, a pair of bus bars, a resin-made internal case, molding resin, a metal external case, and a buffer material layer. The bus bars are each connected to respective one of electrodes of the metallized film capacitor. The internal case contains the metallized film capacitor. The metallized film capacitor is submerged with molding resin in the internal case so as to expose parts of the bus bars. The external case contains the internal case and both cases are connected at a connecting part. A buffer material layer is put in a gap made at least at a part between the internal case and the external case.
摘要翻译：壳体电容器具有金属化膜电容器，一对母线，树脂制内部壳体，模制树脂，金属外壳和缓冲材料层。汇流条各自连接到金属化薄膜电容器的相应电极之一。内部壳体包含金属化薄膜电容器。金属化膜电容器在内部壳体中浸入模制树脂，以暴露母线的部分。外壳包含内部外壳，两个外壳均连接在连接部分。将缓冲材料层放置在至少在内部壳体和外部壳体之间的部分处形成的间隙中。

3. 发明授权

US07911765B2 Metalized film capacitor, case mold type capacitor using the same, inverter circuit, and vehicle drive motor drive circuit 有权
标题翻译：金属化薄膜电容器，使用其的外壳型电容器，变频器电路和车辆驱动电机驱动电路
公开(公告)号：US07911765B2
公开(公告)日：2011-03-22
申请号：US11908524
申请日：2006-04-07
申请人： Hiroki Takeoka , Toshiharu Saito , Toshihisa Miura , Takeshi Imamura , Yoshinari Nagata
发明人： Hiroki Takeoka , Toshiharu Saito , Toshihisa Miura , Takeshi Imamura , Yoshinari Nagata
IPC分类号： H01G4/08 , H01G4/005 , H01G4/32
CPC分类号： H01G4/30 , H01G4/01 , H01G4/015 , H01G4/145 , H01G4/18 , H01G4/232 , H01G4/32 , Y02T10/7022
摘要： A metalized film capacitor capable of exhibiting stable performance in a wide temperature range is provided. The metalized film capacitor has an elliptical cross sectional shape having a major axis of 60 mm or above. In this capacitor, offset for shifting in the width direction of a pair of metalized film is set to 1.2 mm or above. Since the bonding state between metal vapor-deposited electrode and metal sprayed electrode formed on the end surface is stable, a stable contact between metal sprayed electrode and dielectric film is maintained, thereby preferably maintaining tan σand exhibiting excellent performance even if the use temperature range is increased and the thermal stress is increased.
摘要翻译：提供能够在宽温度范围内表现出稳定性能的金属化薄膜电容器。金属化薄膜电容器具有长轴为60mm以上的椭圆形截面形状。在该电容器中，将一对金属化膜的宽度方向的偏移偏移设定为1.2mm以上。由于形成在端面的金属蒸镀电极与金属喷镀电极之间的接合状态稳定，所以能够保持金属喷涂电极和电介质膜之间的稳定的接触，从而优选保持tan＆sgr;并且即使使用温度范围增加，热应力增加。

4. 发明申请

US20080310075A1 Metalized Film Capacitor, Case Mold Type Capacitor Using the Same, Inverter Circuit, and Vehicle Drive Motor Drive Circuit 有权
标题翻译：金属化薄膜电容器，使用其的壳模型电容器，逆变器电路和车辆驱动电机驱动电路
公开(公告)号：US20080310075A1
公开(公告)日：2008-12-18
申请号：US11908524
申请日：2006-04-07
申请人： Hiroki Takeoka , Toshiharu Saito , Toshihisa Miura , Takeshi Imamura , Yoshinari Nagata
发明人： Hiroki Takeoka , Toshiharu Saito , Toshihisa Miura , Takeshi Imamura , Yoshinari Nagata
IPC分类号： H01G4/32
CPC分类号： H01G4/30 , H01G4/01 , H01G4/015 , H01G4/145 , H01G4/18 , H01G4/232 , H01G4/32 , Y02T10/7022
摘要： A metalized film capacitor capable of exhibiting stable performance in a wide temperature range is provided. The metalized film capacitor has an elliptical cross sectional shape having a major axis of 60 mm or above. In this capacitor, offset for shifting in the width direction of a pair of metalized film is set to 1.2 mm or above. Since the bonding state between metal vapor-deposited electrode and metal sprayed electrode formed on the end surface is stable, a stable contact between metal sprayed electrode and dielectric film is maintained, thereby preferably maintaining tan σ and exhibiting excellent performance even if the use temperature range is increased and the thermal stress is increased.
摘要翻译：提供能够在宽温度范围内表现出稳定性能的金属化薄膜电容器。金属化薄膜电容器具有长轴为60mm以上的椭圆形截面形状。在该电容器中，将一对金属化膜的宽度方向的偏移偏移设定为1.2mm以上。由于形成在端面上的金属蒸镀电极与金属喷镀电极之间的接合状态稳定，所以能够保持金属喷涂电极和电介质膜之间的稳定的接触，从而优选保持tanδ并且即使使用温度范围增加了热应力。

5. 发明授权

US08670223B2 Case mold type capacitor 有权
标题翻译：表壳式电容器
公开(公告)号：US08670223B2
公开(公告)日：2014-03-11
申请号：US13880916
申请日：2011-12-22
申请人： Takeshi Imamura , Yoshinari Nagata , Toshiharu Saito
发明人： Takeshi Imamura , Yoshinari Nagata , Toshiharu Saito
IPC分类号： H01G4/38 , H01G4/08
CPC分类号： H01G4/224 , H01G2/04 , H01G4/228 , H01G4/38 , Y02T10/7022
摘要： A case mold type capacitor is formed of multiple metalized film capacitors connected together in parallel and rigidly accommodated with molding resin within a case. The multiple metalized film capacitors are divided into a first block and a second block, and P-poles of each block confront each other, and N-poles thereof also confront each other. Bus-bars including a connection terminal for external connection at an end are connected to respective P-poles and N-poles of each block. The bus-bars connected to the P-poles are coupled together, and the bus-bars connected to the N-poles are coupled together. Each one of the bus-bars includes a section located on the opening side of the case with respect to the blocks. The bus-bars connected to the P-poles overlap in part, and the bus-bars connected to the N-poles also overlap in part.
摘要翻译：壳体型电容器由并联连接在一起的多个金属化薄膜电容器形成，并且与模制树脂刚性地容纳在壳体内。多个金属化膜电容器被分成第一块和第二块，并且每个块的P极彼此相对，并且其N极也彼此相对。包括端部用于外部连接的连接端子的母线连接到每个块的相应的P极和N极。连接到P极的母线连接在一起，连接到N极的汇流条连接在一起。母线中的每一个包括相对于块的位于壳体的开口侧的部分。与P极连接的母线部分重叠，连接到N极的母线也部分重叠。

6. 发明申请

US20130222967A1 CASE MOLD TYPE CAPACITOR 有权
标题翻译： CASE模具型电容器
公开(公告)号：US20130222967A1
公开(公告)日：2013-08-29
申请号：US13880916
申请日：2011-12-22
申请人： Takeshi Imamura , Yoshinari Nagata , Toshiharu Saito
发明人： Takeshi Imamura , Yoshinari Nagata , Toshiharu Saito
IPC分类号： H01G4/224
CPC分类号： H01G4/224 , H01G2/04 , H01G4/228 , H01G4/38 , Y02T10/7022
摘要： A case mold type capacitor is formed of multiple metalized film capacitors connected together in parallel and rigidly accommodated with molding resin within a case. The multiple metalized film capacitors are divided into a first block and a second block, and P-poles of each block confront each other, and N-poles thereof also confront each other. Bus-bars including a connection terminal for external connection at an end are connected to respective P-poles and N-poles of each block. The bus-bars connected to the P-poles are coupled together, and the bus-bars connected to the N-poles are coupled together. Each one of the bus-bars includes a section located on the opening side of the case with respect to the blocks. The bus-bars connected to the P-poles overlap in part, and the bus-bars connected to the N-poles also overlap in part.
摘要翻译：壳体型电容器由并联连接在一起的多个金属化薄膜电容器形成，并且与模制树脂刚性地容纳在壳体内。多个金属化膜电容器被分成第一块和第二块，并且每个块的P极彼此相对，并且其N极也彼此相对。包括端部用于外部连接的连接端子的母线连接到每个块的相应的P极和N极。连接到P极的母线连接在一起，连接到N极的汇流条连接在一起。母线中的每一个包括相对于块的位于壳体的开口侧的部分。与P极连接的母线部分重叠，连接到N极的母线也部分重叠。

7. 发明授权

US08692312B2 Semiconductor memory device and method of manufacturing the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US08692312B2
公开(公告)日：2014-04-08
申请号：US13428506
申请日：2012-03-23
申请人： Yoshiaki Fukuzumi , Masaru Kito , Takeshi Imamura
发明人： Yoshiaki Fukuzumi , Masaru Kito , Takeshi Imamura
IPC分类号： H01L29/792
CPC分类号： H01L29/7926 , H01L27/11575 , H01L27/11582 , H01L29/66833
摘要： According to one embodiment, a method of manufacturing a semiconductor memory device is provided. In the method, a laminated body in which a first silicon layer, a first sacrificial layer, a second silicon layer, and a second sacrificial layer are laminated in turn is formed. A first insulating film is formed on the laminated body. A trench is formed in the laminated body and the first insulating film. A third sacrificial layer is formed into the trench. The third sacrificial layer is etched by wet etching to be retreated from a top surface of the third sacrificial layer, thereby etching end faces of the first sacrificial layer and the second sacrificial layer.
摘要翻译：根据一个实施例，提供一种制造半导体存储器件的方法。在该方法中，形成依次层叠有第一硅层，第一牺牲层，第二硅层和第二牺牲层的层叠体。第一绝缘膜形成在层叠体上。在层叠体和第一绝缘膜中形成沟槽。第三牺牲层形成在沟槽中。通过湿蚀刻蚀刻第三牺牲层以从第三牺牲层的顶表面撤回，从而蚀刻第一牺牲层和第二牺牲层的端面。

8. 发明授权

US08598643B2 Nonvolatile semiconductor memory device and method of manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08598643B2
公开(公告)日：2013-12-03
申请号：US13235425
申请日：2011-09-18
申请人： Kaori Kawasaki , Yoshiaki Fukuzumi , Masaru Kito , Tomoko Fujiwara , Takeshi Imamura , Ryouhei Kirisawa , Hideaki Aochi
发明人： Kaori Kawasaki , Yoshiaki Fukuzumi , Masaru Kito , Tomoko Fujiwara , Takeshi Imamura , Ryouhei Kirisawa , Hideaki Aochi
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/11582 , H01L27/1157 , H01L29/7926
摘要： According to one embodiment, a nonvolatile semiconductor memory device comprises a first conductive layer, a second conductive layer, a first inter-electrode insulating film, and a third conductive layer stacked above the first conductive layer, a memory film, a semiconductor layer, an insulating member, and a silicide layer. The memory film and the semiconductor layer is formed on the inner surface of through hole provided in the second conductive layer, the first inter-electrode insulating film, and the third conductive layer. The insulating member is buried in a slit dividing the second conductive layer, the first inter-electrode insulating film, and the third conductive layer. The silicide layer is formed on surfaces of the second conductive layer and the third conductive layer in the slit. The distance between the second conductive layer and the third conductive layer along the inner surface of the slit is longer than that of along the stacking direction.
摘要翻译：根据一个实施例，非易失性半导体存储器件包括第一导电层，第二导电层，第一电极间绝缘膜和堆叠在第一导电层上方的第三导电层，存储膜，半导体层，绝缘构件和硅化物层。存储膜和半导体层形成在设置在第二导电层，第一电极间绝缘膜和第三导电层中的通孔的内表面上。绝缘构件埋设在分割第二导电层，第一电极间绝缘膜和第三导电层的狭缝中。硅化物层形成在狭缝中的第二导电层和第三导电层的表面上。沿着狭缝的内表面，第二导电层和第三导电层之间的距离比层叠方向长。

9. 发明授权

US08131787B2 Information, transformation and reverse transformation processing 失效
标题翻译：信息，转型和逆向转换处理
公开(公告)号：US08131787B2
公开(公告)日：2012-03-06
申请号：US12123991
申请日：2008-05-20
申请人： Takeshi Imamura , Kent Tamura , Satoshi Makino , Toshiro Takase
发明人： Takeshi Imamura , Kent Tamura , Satoshi Makino , Toshiro Takase
IPC分类号： G06F7/00 , G06F17/30
CPC分类号： G06F17/227 , Y10S707/99942
摘要： A transformation processing system input data including a data record area for storing target date and a transformation processing identification information record area for storing transformation processing identification information about transformation processing executed upon the target data. The transformation processing system includes: a reverse transformation information recording unit which records a target data pointer indicating the data record area in transformed data, a transformation processing identification information pointer indicating the transformation processing identification information record area, and reverse transformation processing identification information about reverse transformation processing; a target data transformation unit which transforms the target data and records it in the data record area; and a transformation processing identification information recording unit which adds the transformation processing identification information about the transformation processing executed by the target data transformation unit to the transformation processing identification information record area in the input data.
摘要翻译：变换处理系统输入数据，包括用于存储目标日期的数据记录区域和用于存储关于在目标数据上执行的变换处理的变换处理识别信息的变换处理识别信息记录区域。变换处理系统包括：逆变换信息记录单元，其在变换数据中记录指示数据记录区的目标数据指针，指示变换处理识别信息记录区的变换处理识别信息指针，以及反转变换处理识别信息转换处理; 目标数据变换单元，其转换目标数据并将其记录在数据记录区域中; 以及变换处理识别信息记录单元，其将关于由目标数据变换单元执行的变换处理的变换处理识别信息添加到输入数据中的变换处理识别信息记录区域。

10. 发明授权

US07919263B2 Organic material-immobiling structure and method for production of the same, and peptide and DNA therefor 失效
标题翻译：有机材料固定结构及其生产方法，以及肽和DNA
公开(公告)号：US07919263B2
公开(公告)日：2011-04-05
申请号：US10548442
申请日：2004-08-18
申请人： Hidenori Shiotsuka , Takeshi Imamura , Tsuyoshi Nomoto , Miki Ogawa
发明人： Hidenori Shiotsuka , Takeshi Imamura , Tsuyoshi Nomoto , Miki Ogawa
IPC分类号： G01N31/00 , G01N33/53
CPC分类号： C07K17/14 , C07K7/08 , C07K17/08 , C12N11/14 , G01N33/54353 , G01N33/552
摘要： The invention provides an organic material-immobilizing structure employing new immobilization means, characterized in that at least a part of the surface of the substrate is comprised of one or more members containing silicon oxide, the organic material is bound to the surface of the substrate through a binding domain bound to the organic material and containing an amino acid sequence capable of binding to silicon oxide, selected from the group consisting of amino acid sequences of SEQ ID NOS: 1 and 2: Val-Ser-Pro-Met-Arg-Ser-Ala-Thr-Thr-His-Thr-Val; and Ile-Pro-Met-His-Val-His-His-Lys-His-Pro-His-Val, and derivatives thereof.
摘要翻译：本发明提供一种使用新的固定装置的有机材料固定结构，其特征在于，基底表面的至少一部分由含有氧化硅的一种或多种构件组成，有机材料通过与有机材料结合并含有能够结合氧化硅的氨基酸序列的结合结构域，其选自SEQ ID NO：1和2的氨基酸序列：Val-Ser-Pro-Met-Arg-Ser -Ala-Thr-Thr-His-Thr-Val; 和Ile-Pro-Met-His-Val-His-His-Lys-His-Pro-His-Val及其衍生物。

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