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    • 3. 发明授权
    • Photoelectric-conversion apparatus and image-pickup system
    • 光电转换装置和摄像系统
    • US07411170B2
    • 2008-08-12
    • US11835009
    • 2007-08-07
    • Mineo ShimotsusaShigeru NishimuraShunsuke Takimoto
    • Mineo ShimotsusaShigeru NishimuraShunsuke Takimoto
    • H01L27/00H01L31/062
    • H01L27/14603H01L27/14609H01L27/14641
    • A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.
    • 光电转换装置包括光电转换区域,其中多个光电转换元件被配置为将入射光转换成电荷,多个浮动扩散区域,多个转移MOS晶体管,被配置为转移电荷 提供到浮置扩散区域的光电转换元件,以及被配置为将基于所传送的电荷产生的信号读取并发送到输出线的多个放大MOS晶体管。 在光电转换元件的光接收表面上设置防反射膜。 放大MOS晶体管的栅极通过在单个接触孔中提供一个导体而电连接到一个浮动扩散区域,并且防反射膜覆盖除了接触孔的基部之外的光电转换区域。
    • 4. 发明申请
    • PHOTOELECTRIC-CONVERSION APPARATUS AND IMAGE-PICKUP SYSTEM
    • 光电转换装置和图像拾取系统
    • US20080054165A1
    • 2008-03-06
    • US11835009
    • 2007-08-07
    • Mineo ShimotsusaShigeru NishimuraShunsuke Takimoto
    • Mineo ShimotsusaShigeru NishimuraShunsuke Takimoto
    • G01J1/44H01L31/062
    • H01L27/14603H01L27/14609H01L27/14641
    • A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.
    • 光电转换装置包括光电转换区域,其中多个光电转换元件被配置为将入射光转换成电荷,多个浮动扩散区域,多个转移MOS晶体管,被配置为转移电荷 提供到浮置扩散区域的光电转换元件,以及被配置为将基于所传送的电荷产生的信号读取并发送到输出线的多个放大MOS晶体管。 在光电转换元件的光接收表面上设置防反射膜。 放大MOS晶体管的栅极通过在单个接触孔中提供一个导体而电连接到一个浮动扩散区域,并且防反射膜覆盖除了接触孔的基部之外的光电转换区域。
    • 5. 发明授权
    • Photoelectric-conversion apparatus and image-pickup system
    • 光电转换装置和摄像系统
    • US07592578B2
    • 2009-09-22
    • US12168245
    • 2008-07-07
    • Mineo ShimotsusaShigeru NishimuraShunsuke Takimoto
    • Mineo ShimotsusaShigeru NishimuraShunsuke Takimoto
    • H01L27/00H01L31/062
    • H01L27/14603H01L27/14609H01L27/14641
    • A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.
    • 光电转换装置包括光电转换区域,其中多个光电转换元件被配置为将入射光转换成电荷,多个浮动扩散区域,多个转移MOS晶体管,被配置为转移电荷 提供到浮置扩散区域的光电转换元件,以及被配置为将基于所传送的电荷产生的信号读取并发送到输出线的多个放大MOS晶体管。 在光电转换元件的光接收表面上设置防反射膜。 放大MOS晶体管的栅极通过在单个接触孔中提供一个导体而电连接到一个浮动扩散区域,并且防反射膜覆盖除了接触孔的基部之外的光电转换区域。
    • 6. 发明申请
    • PHOTOELECTRIC-CONVERSION APPARATUS AND IMAGE-PICKUP SYSTEM
    • 光电转换装置和图像拾取系统
    • US20090011532A1
    • 2009-01-08
    • US12168245
    • 2008-07-07
    • Mineo ShimotsusaShigeru NishimuraShunsuke Takimoto
    • Mineo ShimotsusaShigeru NishimuraShunsuke Takimoto
    • H01L31/113
    • H01L27/14603H01L27/14609H01L27/14641
    • A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.
    • 光电转换装置包括光电转换区域,其中多个光电转换元件被配置为将入射光转换成电荷,多个浮动扩散区域,多个转移MOS晶体管,被配置为转移电荷 提供到浮置扩散区域的光电转换元件,以及被配置为将基于所传送的电荷产生的信号读取并发送到输出线的多个放大MOS晶体管。 在光电转换元件的光接收表面上设置防反射膜。 放大MOS晶体管的栅极通过在单个接触孔中提供一个导体而电连接到一个浮动扩散区域,并且防反射膜覆盖除了接触孔的基部之外的光电转换区域。