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1. 发明申请

US20090227115A1 ETCHING SOLUTION FOR SUBSTRATE 审中-公开
标题翻译：蚀刻解决方案
公开(公告)号：US20090227115A1
公开(公告)日：2009-09-10
申请号：US12301549
申请日：2007-05-22
申请人： Takehisa Kato , Masahiko Kakizawa , Ichiro Hayashida
发明人： Takehisa Kato , Masahiko Kakizawa , Ichiro Hayashida
IPC分类号： H01L21/306 , C09K13/02
CPC分类号： H01L21/30604 , H01L21/02019
摘要： Disclosed are an etching solution for a substrate and a substrate-etching method, which can prevent the contamination of a substrate, particularly a semiconductor substrate, with metal impurities. The etching solution comprises a dicarboxylic acid represented by the general formula (1) or a salt thereof and 20% (W/W) or more of an alkali metal hydroxide. The substrate-etching method comprises the step of etching a substrate with said etching solution. (wherein T1 and T2 independently represent a hydrogen atom, a hydroxyl group, a carboxyl group or an alkyl group having 1 to 3 carbon atoms, or T1 and T1 together form a bond; and R1 to R4 independently represent a hydrogen atom, a hydroxyl group, a carboxyl group or an alkyl group having 1 to 3 carbon atoms, provided that, when T1 and T2 do not together form a bond, any two of T1, T2 and R1 to R4 represent a carboxyl group, and any one of the remainder represents a hydroxyl group, and the others independently represent a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and when T1 and T2 together form a bond, any two of R1 to R4 represent a carboxyl group, and the others independently represent a hydrogen atom or an alkyl group having 1 to 3 carbon atoms.)
摘要翻译：公开了一种用于基板的蚀刻溶液和基板蚀刻方法，其可以防止具有金属杂质的基板，特别是半导体基板的污染。蚀刻溶液包含由通式（1）表示的二羧酸或其盐和20％（W / W）以上的碱金属氢氧化物。基板蚀刻方法包括用所述蚀刻溶液蚀刻基板的步骤。（其中T1和T2独立地表示氢原子，羟基，羧基或具有1至3个碳原子的烷基，或者T1和T1一起形成键;并且R 1至R 4独立地表示氢原子，羟基基团，羧基或具有1至3个碳原子的烷基，条件是当T1和T2不一起形成键时，T1，T2和R1至R4中的任何两个表示羧基，并且任何一个余数表示羟基，其余表示氢原子或碳原子数为1〜3的烷基，当T1和T2一起形成键时，R 1〜R 4中的任意2个表示羧基，其余各自独立地表示表示氢原子或碳原子数1〜3的烷基）

2. 发明授权

US06310019B1 Cleaning agent for a semi-conductor substrate 失效
标题翻译：半导体基板用清洁剂
公开(公告)号：US06310019B1
公开(公告)日：2001-10-30
申请号：US09610657
申请日：2000-07-05
申请人： Masahiko Kakizawa , Ken-ichi Umekita , Ichiro Hayashida
发明人： Masahiko Kakizawa , Ken-ichi Umekita , Ichiro Hayashida
IPC分类号： C11D1835
CPC分类号： H01L21/02074 , C11D1/62 , C11D1/72 , C11D1/722 , C11D1/835 , C11D11/0047
摘要： This invention relates to a cleaning agent for a semi-conductor substrate, particularly, one having copper wirings on its surface, comprising a nonionic surfactant and a method for cleaning the same. The said cleaning agent and the method have made it possible to control a speed of etching on silicone oxide so as to remove impurities adsorbed on copper wirings and silicone oxide on a surface of a semi-conductor substrate having copper wirings on its surface, such as copper oxides and particles, without causing corrosion or oxidation of copper wirings nor causing roughness on the surface.
摘要翻译：本发明涉及一种用于半导体衬底的清洁剂，特别是其表面上具有铜布线的清洁剂，其包含非离子表面活性剂及其清洁方法。所述清洁剂和该方法使得可以控制氧化硅上的蚀刻速度，从而去除其表面上具有铜布线的半导体基板的表面上吸附在铜布线和氧化硅上的杂质，例如铜氧化物和颗粒，不会导致铜布线的腐蚀或氧化，也不会导致表面粗糙。

3. 发明授权

US06716803B2 Cleaning agent for a semi-conductor substrate 失效
标题翻译：半导体基板用清洁剂
公开(公告)号：US06716803B2
公开(公告)日：2004-04-06
申请号：US09923962
申请日：2001-08-08
申请人： Masahiko Kakizawa , Ken-ichi Umekita , Ichiro Hayashida
发明人： Masahiko Kakizawa , Ken-ichi Umekita , Ichiro Hayashida
IPC分类号： H01L21461
CPC分类号： H01L21/02074 , C11D1/62 , C11D1/72 , C11D1/722 , C11D1/835 , C11D11/0047
摘要： This invention relates to a cleaning agent for a semi-conductor substrate, particularly, one having copper wirings on its surface, comprising a nonionic surfactant and a method for cleaning the same. The said cleaning agent and the method have made it possible to control a speed of etching on silicone oxide so as to remove impurities adsorbed on copper wirings and silicone oxide on a surface of a semi-conductor substrate having copper wirings on its surface, such as copper oxides and particles, without causing corrosion or oxidation of copper wirings nor causing roughness on the surface.
摘要翻译：本发明涉及一种用于半导体衬底的清洁剂，特别是其表面上具有铜布线的清洁剂，其包含非离子表面活性剂及其清洁方法。所述清洁剂和方法使得可以控制在氧化硅上蚀刻的速度，以便除去铜表面上铜线布线的半导体衬底表面上的铜布线和氧化硅上的杂质，例如铜氧化物和颗粒，而不会引起铜线的腐蚀或氧化，也不会造成表面粗糙。

4. 发明授权

US6143705A Cleaning agent 失效
公开(公告)号：US6143705A
公开(公告)日：2000-11-07
申请号：US868891
申请日：1997-06-04
申请人： Masahiko Kakizawa , Osamu Ichikawa , Ichiro Hayashida
发明人： Masahiko Kakizawa , Osamu Ichikawa , Ichiro Hayashida
IPC分类号： C11D7/26 , C11D7/32 , C11D11/00 , H01L21/306 , C11D9/04 , C11D15/00
CPC分类号： H01L21/02052 , C11D11/0047 , C11D7/264 , C11D7/265 , C11D7/3209 , C11D7/3218 , C11D7/3245
摘要： Removing particles and metallic contaminants without corrosing the metallized wirings and without giving adverse effect of planarization on the semiconductor substrate surface can be effectively achieved by use of a cleaning agent which comprises an organic acid having at least one carboxyl group and a complexing agent having chelating ability.

5. 发明授权

US07375066B2 Semiconductor wafer cleaning agent and cleaning method 有权
标题翻译：半导体晶圆清洗剂及清洗方法
公开(公告)号：US07375066B2
公开(公告)日：2008-05-20
申请号：US10203659
申请日：2001-03-19
申请人： Masahiko Kakizawa , Mayumi Kimura , Hironori Mizuta , Ichiro Hayashida
发明人： Masahiko Kakizawa , Mayumi Kimura , Hironori Mizuta , Ichiro Hayashida
IPC分类号： C11D1/00
CPC分类号： H01L21/02074 , C11D7/265 , C11D7/3209 , C11D7/3245 , C11D7/3272 , C11D7/34 , C11D11/0047 , C23G1/20 , H01L21/76877
摘要： A semiconductor surface cleaning agent containing a compound the molecule of which has a nitrogen atom having an unshared electron pair and used for cleaning the surface of a semiconductor on which copper wiring is provided, and a method for cleaning the surface of a semiconductor characterized by treating the surface of a semiconductor on which copper wiring is provided with such a cleaning agent. The cleaning agent does not corrode the copper wiring (copper thin film) on the semiconductor and SiO2 of the interlayer insulating film, does not impair the flatness of the surface, and is effective in removing CuO and particles adhering to the surface of the Cu-CMP step.
摘要翻译：一种半导体表面清洁剂，其含有其分子具有具有未共享电子对的氮原子并用于清洁其上提供铜布线的半导体的表面的化合物，以及用于清洁半导体表面的方法，其特征在于，铜布线上设置有这种清洁剂的半导体的表面。清洗剂不腐蚀半导体上的铜布线（铜薄膜）和层间绝缘膜的SiO 2层，不会损害表面的平坦度，有效地除去CuO和颗粒粘附在Cu-CMP步骤的表面上。

6. 发明授权

US08900371B2 Cleaning agent for substrate and cleaning method 有权
标题翻译：基材清洗剂及清洗方法
公开(公告)号：US08900371B2
公开(公告)日：2014-12-02
申请号：US13232369
申请日：2011-09-14
申请人： Hironori Mizuta , Masahiko Kakizawa , Ichiro Hayashida
发明人： Hironori Mizuta , Masahiko Kakizawa , Ichiro Hayashida
IPC分类号： B08B3/04 , C11D7/36 , C11D7/50 , C11D7/32 , C11D7/26 , C23G5/02 , C23G5/032 , C11D11/00 , H01L21/02
CPC分类号： H01L21/02052 , C11D7/261 , C11D7/262 , C11D7/263 , C11D7/264 , C11D7/3245 , C11D7/36 , C11D11/0047 , C23G5/02 , C23G5/032
摘要： The present invention provides a cleaning agent for a substrate and a cleaning method thereof, which can effectively remove fine particles (particles) present on a surface of substrate or impurities derived from various kinds of metals (metallic impurities), without causing roughness surface of a substrate, in particular, a semiconductor substrate, and without causing corrosion or oxidation of metal wirings, in particular, copper wirings, provided on a surface of substrate, and can further remove at the same time a carbon defect present on a surface of substrate, without removing a metal corrosion inhibitor—Cu film, in particular, a Cu-BTA film.The present invention provides a cleaning agent for a substrate comprising [I] an organic acid having at least one carboxyl group and/or [II] a complexing agent, and [III] an organic solvent selected from the group consisting of (1) monohydric alcohols, (2) alkoxyalcohols, (3) glycols, (4) glycol ethers, (5) ketones and (6) nitriles, and a cleaning method for a surface of substrate, which comprises the surface of substrate is treated with said cleaning agent.
摘要翻译：本发明提供了一种基板用清洗剂及其清洗方法，其能够有效地除去存在于基板表面的微粒（微粒）或来自各种金属（金属杂质）的杂质，而不产生粗糙度的表面基板，特别是半导体基板，并且不会引起设置在基板表面上的金属布线，特别是铜布线的腐蚀或氧化，并且可以进一步同时去除存在于基板表面上的碳缺陷，而不去除金属腐蚀抑制剂Cu膜，特别是Cu-BTA膜。本发明提供了一种用于底物的清洁剂，其包含[I]具有至少一个羧基的有机酸和/或[II]络合剂，和[III]有机溶剂，其选自（1）一元醇，（2）烷氧基醇，（3）二醇类，（4）二醇醚类，（5）酮类和（6）腈类，以及包含基材表面的基材表面的清洗方法用所述清洗剂。

7. 发明申请

US20120000485A1 CLEANING AGENT FOR SUBSTRATE AND CLEANING METHOD 有权
标题翻译：清洗剂和清洗方法
公开(公告)号：US20120000485A1
公开(公告)日：2012-01-05
申请号：US13232369
申请日：2011-09-14
申请人： Hironori Mizuta , Masahiko Kakizawa , Ichiro Hayashida
发明人： Hironori Mizuta , Masahiko Kakizawa , Ichiro Hayashida
IPC分类号： C23G1/02 , B08B3/08
CPC分类号： H01L21/02052 , C11D7/261 , C11D7/262 , C11D7/263 , C11D7/264 , C11D7/3245 , C11D7/36 , C11D11/0047 , C23G5/02 , C23G5/032
摘要： The present invention provides a cleaning agent for a substrate and a cleaning method thereof, which can effectively remove fine particles (particles) present on a surface of substrate or impurities derived from various kinds of metals (metallic impurities), without causing roughness surface of a substrate, in particular, a semiconductor substrate, and without causing corrosion or oxidation of metal wirings, in particular, copper wirings, provided on a surface of substrate, and can further remove at the same time a carbon defect present on a surface of substrate, without removing a metal corrosion inhibitor—Cu film, in particular, a Cu-BTA film.The present invention provides a cleaning agent for a substrate comprising [I] an organic acid having at least one carboxyl group and/or [II] a complexing agent, and [III] an organic solvent selected from the group consisting of (1) monohydric alcohols, (2) alkoxyalcohols, (3) glycols, (4) glycol ethers, (5) ketones and (6) nitriles, and a cleaning method for a surface of substrate, which comprises the surface of substrate is treated with said cleaning agent.
摘要翻译：本发明提供了一种基板用清洗剂及其清洗方法，其能够有效地除去存在于基板表面的微粒（微粒）或来自各种金属（金属杂质）的杂质，而不产生粗糙度的表面基板，特别是半导体基板，并且不会引起设置在基板表面上的金属布线，特别是铜布线的腐蚀或氧化，并且可以进一步同时去除存在于基板表面上的碳缺陷，而不去除金属腐蚀抑制剂Cu膜，特别是Cu-BTA膜。本发明提供了一种用于底物的清洁剂，其包含[I]具有至少一个羧基的有机酸和/或[II]络合剂，和[III]有机溶剂，其选自（1）一元醇，（2）烷氧基醇，（3）二醇类，（4）二醇醚类，（5）酮类和（6）腈类，以及包含基材表面的基材表面的清洗方法用所述清洗剂。

8. 发明申请

US20070235061A1 Cleaning Agent for Substrate and Cleaning Method 审中-公开
标题翻译：基材清洗剂和清洗方法
公开(公告)号：US20070235061A1
公开(公告)日：2007-10-11
申请号：US10577129
申请日：2004-10-13
申请人： Hironori Mizuta , Masahiko Kakizawa , Ichiro Hayashida
发明人： Hironori Mizuta , Masahiko Kakizawa , Ichiro Hayashida
IPC分类号： C11D1/68
CPC分类号： H01L21/02052 , C11D7/261 , C11D7/262 , C11D7/263 , C11D7/264 , C11D7/3245 , C11D7/36 , C11D11/0047 , C23G5/02 , C23G5/032
摘要： The present invention provides a cleaning agent for a substrate and a cleaning method thereof, which can effectively remove fine particles (particles) present on a surface of substrate or impurities derived from various kinds of metals (metallic impurities), without causing roughness surface of a substrate, in particular, a semiconductor substrate, and without causing corrosion or oxidation of metal wirings, in particular, copper wirings, provided on a surface of substrate, and can further remove at the same time a carbon defect present on a surface of substrate, without removing a metal corrosion inhibitor—Cu film, in particular, a Cu-BTA film. The present invention provides a cleaning agent for a substrate comprising [I] an organic acid having at least one carboxyl group and/or [II] a complexing agent, and [III] an organic solvent selected from the group consisting of (1) monohydric alcohols, (2) alkoxyalcohols, (3) glycols, (4) glycol ethers, (5) ketones and (6) nitriles, and a cleaning method for a surface of substrate, which comprises the surface of substrate is treated with said cleaning agent.
摘要翻译：本发明提供了一种基板用清洗剂及其清洗方法，其能够有效地除去存在于基板表面的微粒（微粒）或来自各种金属（金属杂质）的杂质，而不产生粗糙度的表面基板，特别是半导体基板，并且不会引起设置在基板表面上的金属布线，特别是铜布线的腐蚀或氧化，并且可以进一步同时去除存在于基板表面上的碳缺陷，而不去除金属腐蚀抑制剂Cu膜，特别是Cu-BTA膜。本发明提供了一种用于底物的清洁剂，其包含[I]具有至少一个羧基的有机酸和/或[II]络合剂，和[III]有机溶剂，其选自（1）一元醇，（2）烷氧基醇，（3）二醇类，（4）二醇醚类，（5）酮类和（6）腈类，以及包含基材表面的基材表面的清洗方法用所述清洗剂。

9. 发明授权

US06534458B1 Cleaning agent for a semi-conductor substrate 失效
标题翻译：半导体基板用清洁剂
公开(公告)号：US06534458B1
公开(公告)日：2003-03-18
申请号：US09712904
申请日：2000-11-16
申请人： Masahiko Kakizawa , Ken-ichi Umekita , Ichiro Hayashida
发明人： Masahiko Kakizawa , Ken-ichi Umekita , Ichiro Hayashida
IPC分类号： C11D166
CPC分类号： H01L21/02074 , C11D1/62 , C11D1/72 , C11D1/722 , C11D1/835 , C11D11/0047
摘要： This invention relates to a cleaning agent for a semi-conductor substrate, particularly, one having copper wirings on its surface, comprising a nonionic surfactant and a method for cleaning the same. The said cleaning agent and the method have made it possible to control a speed of etching on silicone oxide so as to remove impurities adsorbed on copper wirings and silicone oxide on a surface of a semi-conductor substrate having copper wirings on its surface, such as copper oxides and particles, without causing corrosion or oxidation of copper wirings nor causing roughness on the surface.
摘要翻译：本发明涉及一种用于半导体衬底的清洁剂，特别是其表面上具有铜布线的清洁剂，其包含非离子表面活性剂及其清洁方法。所述清洁剂和方法使得可以控制在氧化硅上蚀刻的速度，以便除去铜表面上铜线布线的半导体衬底表面上的铜布线和氧化硅上的杂质，例如铜氧化物和颗粒，而不会引起铜线的腐蚀或氧化，也不会造成表面粗糙。

10. 发明授权

US06514921B1 Cleaning agent 有权
公开(公告)号：US06514921B1
公开(公告)日：2003-02-04
申请号：US09658926
申请日：2000-09-11
申请人： Masahiko Kakizawa , Osamu Ichikawa , Ichiro Hayashida
发明人： Masahiko Kakizawa , Osamu Ichikawa , Ichiro Hayashida
IPC分类号： C11D166
CPC分类号： H01L21/02052 , C11D7/264 , C11D7/265 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D11/0047
摘要： Removing particles and metallic contaminants without corrosing the metallized wirings and without giving adverse effect of planarization on the semiconductor substrate surface can be effectively achieved by use of a cleaning agent which comprises an organic acid having at least one carboxyl group and a complexing agent having chelating ability.

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