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1. 发明申请

US20050146277A1 Method for suppressing charging of component in vacuum processing chamber of plasma processing system and plasma processing system 失效
标题翻译：用于等离子体处理系统和等离子体处理系统的真空处理室中的组分的充电抑制方法
公开(公告)号：US20050146277A1
公开(公告)日：2005-07-07
申请号：US10509338
申请日：2003-03-27
申请人： Takehiro Ueda , Katsuyuki Koizumi , Kouki Suzuki
发明人： Takehiro Ueda , Katsuyuki Koizumi , Kouki Suzuki
IPC分类号： H05H1/46 , H01J37/32 , H01L21/205 , H01L21/3065 , H01J7/24
CPC分类号： H01J37/32431 , H01J2237/0206
摘要： When the state of the vacuum processing chamber is switched to an idle state in which an insulating fluid is circulated while a semiconductor wafer W is not placed in the vacuum processing chamber and no plasma is generated in the vacuum processing chamber, nitrogen gas purging (N2 purging) of the inside of the vacuum processing chamber is started, and the pressure in the vacuum processing chamber is controlled to a predetermined level, for example, about 27 Pa (200 mTorr). This makes it possible to prevent a component in the vacuum processing chamber of a plasma processor from being charged to high voltage, so that an insulative material can be protected against breakdown caused by electric discharge or the like.
摘要翻译：当真空处理室的状态切换到绝缘流体循环的空闲状态，而半导体晶片W未放置在真空处理室中并且在真空处理室中不产生等离子体时，氮气吹扫（N 开始真空处理室内部的清洗），并将真空处理室中的压力控制在预定水平，例如约27Pa（200mTorr）。这使得可以防止等离子体处理器的真空处理室中的部件被充电到高电压，使得可以保护绝缘材料免受由放电等引起的击穿。

2. 发明授权

US07592261B2 Method for suppressing charging of component in vacuum processing chamber of plasma processing system and plasma processing system 失效
标题翻译：用于等离子体处理系统和等离子体处理系统的真空处理室中的组分的充电抑制方法
公开(公告)号：US07592261B2
公开(公告)日：2009-09-22
申请号：US10509338
申请日：2003-03-27
申请人： Takehiro Ueda , Katsuyuki Koizumi , Kouki Suzuki
发明人： Takehiro Ueda , Katsuyuki Koizumi , Kouki Suzuki
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01J37/32431 , H01J2237/0206
摘要： When the state of the vacuum processing chamber is switched to an idle state in which an insulating fluid is circulated while a semiconductor wafer W is not placed in the vacuum processing chamber and no plasma is generated in the vacuum processing chamber, nitrogen gas purging (N2 purging) of the inside of the vacuum processing chamber is started, and the pressure in the vacuum processing chamber is controlled to a predetermined level, for example, about 27 Pa (200 mTorr). This makes it possible to prevent a component in the vacuum processing chamber of a plasma processor from being charged to high voltage, so that an insulative material can be protected against breakdown caused by electric discharge or the like.
摘要翻译：当真空处理室的状态切换到绝缘流体循环的空闲状态，而半导体晶片W未放置在真空处理室中并且在真空处理室中不产生等离子体时，氮气吹扫（N2 清洗）真空处理室的内部，并且将真空处理室中的压力控制在预定水平，例如约27Pa（200mTorr）。这使得可以防止等离子体处理器的真空处理室中的部件被充电到高电压，使得可以保护绝缘材料免受由放电等引起的击穿。

3. 发明授权

US08362524B2 Semiconductor device having a fuse element 有权
公开(公告)号：US08362524B2
公开(公告)日：2013-01-29
申请号：US13180050
申请日：2011-07-11
申请人： Takehiro Ueda
发明人： Takehiro Ueda
IPC分类号： H01L27/10
CPC分类号： H01L23/5256 , H01L23/345 , H01L23/525 , H01L23/528 , H01L23/53228 , H01L2924/0002 , H01L2924/00
摘要： A portion-to-be-melted of a fuse is surrounded by plates, so that heat to be generated in a meltdown portion of the fuse under current supply can be confined or accumulated in the vicinity of the meltdown portion of the fuse. This makes it possible to facilitate meltdown of the fuse. The meltdown portion of the fuse in a folded form, rather than in a single here a fuse composed of a straight-line form, is more successful in readily concentrating the heat generated in the fuse under current supply into the meltdown portion, and in further facilitating the meltdown of the fuse.

4. 发明申请

US20110250735A1 METHOD FOR CUTTING AN ELECTRIC FUSE 有权
标题翻译：切割电熔丝的方法
公开(公告)号：US20110250735A1
公开(公告)日：2011-10-13
申请号：US13167429
申请日：2011-06-23
申请人： Takehiro Ueda
发明人： Takehiro Ueda
IPC分类号： H01L21/479
CPC分类号： G11C17/16 , G11C17/18 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： An electric fuse includes: a first interconnect and a second interconnect, formed on a semiconductor substrate; a fuse link, formed on the semiconductor substrate and provided so that an end thereof is coupled to the first interconnect, the fuse link being capable of electrically cutting the second interconnect from the first interconnect; and an electric current inflow terminal and an electric current drain terminal for cutting the fuse link, formed on the semiconductor substrate and provided in one end and another end of the first interconnect, respectively.
摘要翻译：电熔丝包括：形成在半导体衬底上的第一互连和第二互连; 熔丝连接件，形成在半导体衬底上并且设置成使其一端连接到第一互连，熔丝链可以从第一互连电切割第二互连; 以及形成在半导体基板上并分别设置在第一互连的一端和另一端的熔断体的电流流入端子和漏电端子。

5. 发明授权

US07998798B2 Method of cutting electrical fuse 有权
标题翻译：切断电熔丝的方法
公开(公告)号：US07998798B2
公开(公告)日：2011-08-16
申请号：US12715625
申请日：2010-03-02
申请人： Takehiro Ueda
发明人： Takehiro Ueda
IPC分类号： H01L21/82
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A method of cutting an electrical fuse including a first conductor and a second conductor, the first conductor including a first cutting target region, the second conductor branched from the first conductor and connected to the first conductor and including a second cutting target region, which are formed on a semiconductor substrate, the method includes flowing a current in the first conductor, causing material of the first conductor to flow outward near a coupling portion connecting the first conductor to the second conductor, and cutting the first cutting target region and the second cutting target region.
摘要翻译：一种切割包括第一导体和第二导体的电熔丝的方法，所述第一导体包括第一切割目标区域，所述第二导体从所述第一导体分支并连接到所述第一导体并且包括第二切割目标区域，所述第二切割目标区域是形成在半导体衬底上，该方法包括使第一导体中的电流流动，使得第一导体的材料在连接第一导体与第二导体的耦合部分附近向外流动，以及切割第一切割目标区域和第二切割目标区域。

6. 发明授权

US07835211B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07835211B2
公开(公告)日：2010-11-16
申请号：US12379917
申请日：2009-03-04
申请人： Takehiro Ueda
发明人： Takehiro Ueda
IPC分类号： G11C17/18 , G11C5/06
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is provided including a first fuse link having a copper-containing metal film, a second fuse link having a polysilicon film, a semiconductor substrate, and a field insulating film formed on the semiconductor substrate. The second fuse link is formed on the field insulating film. An interlayer insulating film is provided between the first fuse link and the second fuse link. The first fuse link is electrically connected to the second fuse link via a first plug formed in the interlayer insulating film.
摘要翻译：提供了一种半导体器件，包括：具有含铜金属膜的第一熔丝链，具有多晶硅膜的第二熔丝，半导体衬底和形成在半导体衬底上的场绝缘膜。第二熔断体形成在场绝缘膜上。在第一熔断体与第二熔断体之间设置层间绝缘膜。第一熔断体通过形成在层间绝缘膜中的第一插塞电连接到第二熔断体。

7. 发明授权

US07795699B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07795699B2
公开(公告)日：2010-09-14
申请号：US10865796
申请日：2004-06-14
申请人： Takehiro Ueda
发明人： Takehiro Ueda
IPC分类号： H01L29/00
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device of the present invention comprises a semiconductor substrate; and a conductive element formed on the semiconductor substrate and capable of being opened when a predetermined current flows, wherein the conductive element turns plurality of times.
摘要翻译：本发明的半导体器件包括半导体衬底; 以及导电元件，其形成在所述半导体基板上，并且当预定电流流动时能够打开，其中所述导电元件多次转动。

8. 发明授权

US07529147B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07529147B2
公开(公告)日：2009-05-05
申请号：US11591573
申请日：2006-11-02
申请人： Takehiro Ueda
发明人： Takehiro Ueda
IPC分类号： G11C17/18 , G11C5/06
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device has a semiconductor substrate; an electric fuse provided on the semiconductor substrate, and having a first fuse link and a second fuse link connected in series; and a terminal provided between the first fuse link and the second fuse link, wherein the first fuse link and the second fuse link are configured as being different from each other in current value necessary for blowing.
摘要翻译：半导体器件具有半导体衬底; 设置在所述半导体基板上的电熔丝，并且具有串联连接的第一熔断体和第二熔断体; 以及设置在第一熔丝链和第二熔丝链之间的端子，其中第一熔丝链和第二熔丝链构造为在吹塑所需的电流值中彼此不同。

9. 发明授权

US07489230B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07489230B2
公开(公告)日：2009-02-10
申请号：US11514144
申请日：2006-09-01
申请人： Takehiro Ueda
发明人： Takehiro Ueda
IPC分类号： H01H85/044 , H01H85/046 , H01L27/10
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first insulating layer, which is formed on a semiconductor substrate (not shown), and formed with a concave portion, and an electric fuse which has a conductive member, a first terminal provided on one end and a second terminal provided on the other end of the conductive member, and which is provided on the first insulating layer. The first insulating layer is embedded with the conductive member. The conductive member has a flowing-out region in which a material forming the conductive member flows out to the outside of the concave portion, and is cut at a location different from the flowing-out region.
摘要翻译：半导体器件包括形成在半导体衬底（未示出）上并形成有凹部的第一绝缘层和具有导电构件的电熔丝，设置在一端的第一端子和设置在其上的第二端子在导电构件的另一端上，并且设置在第一绝缘层上。第一绝缘层嵌入导电构件。导电构件具有流出区域，其中形成导电构件的材料流出到凹部的外侧，并且在不同于流出区域的位置处被切割。

10. 发明申请

US20080106842A1 MOUNTING DEVICE, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：安装装置，等离子体处理装置和等离子体处理方法
公开(公告)号：US20080106842A1
公开(公告)日：2008-05-08
申请号：US11934313
申请日：2007-11-02
申请人： Hiroharu ITO , Kenichi Kato , Takehiro Ueda
发明人： Hiroharu ITO , Kenichi Kato , Takehiro Ueda
IPC分类号： H01L21/683 , B44C1/22 , C23C16/00 , H01L21/306
CPC分类号： H01L21/6831 , H01L21/67028 , H01L21/68757
摘要： A mounting device includes a mounting body for sustaining a target object to be processed thereon; an electrostatic chuck disposed on the mounting body and having an electrode layer interposed between insulating layers, and the electrostatic chuck serving to electrostatically attract and hold the target object on a surface of the insulating layer by a electrostatic force generated between the electrode layer and the target object by a voltage applied to the electrode layer. Herein, an electrostatic chuck layer, which is one of the insulating layers on the side of a top surface of the electrode layer, is made of a plasma spray coating of yttrium oxide, which is formed by a plasma spraying, having a thickness of about 200 μm to 280 μm, and the electrostatic chuck layer has a surface roughness dependent on a particle diameter of the yttrium oxide used in the plasma spraying.
摘要翻译：安装装置包括用于维持要处理的目标物体的安装体; 设置在所述安装体上并具有介于绝缘层之间的电极层的静电吸盘，并且所述静电吸盘用于通过在所述电极层和所述靶材之间产生的静电力将所述目标物体静电吸引并保持在所述绝缘层的表面上通过施加到电极层的电压来对象。这里，作为电极层顶面一侧的绝缘层之一的静电吸盘层由等离子体喷涂等离子体喷涂法制成，其通过等离子喷涂形成，其厚度为约 200μm至280μm，并且静电吸盘层具有取决于等离子体喷涂中使用的氧化钇的粒径的表面粗糙度。

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