专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06445002B1 SRAM-based semiconductor integrated circuit testing element 失效
标题翻译：基于SRAM的半导体集成电路测试元件
公开(公告)号：US06445002B1
公开(公告)日：2002-09-03
申请号：US09621452
申请日：2000-07-21
申请人： Takehiro Hashimoto , Yutaka Tanaka , Tetsuya Asami , Youichi Satou , Noriaki Okumiya
发明人： Takehiro Hashimoto , Yutaka Tanaka , Tetsuya Asami , Youichi Satou , Noriaki Okumiya
IPC分类号： H01L2358
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： In a method for setting appropriate initial-failure screening conditions when mass-producing semiconductor devices of multiple types, devices of each type being manufactured in a small number, the step of subjecting products of every type to an acceleration test is excluded, and instead, the failure ratio on the market of semiconductor devices of each type is estimated using a testing semiconductor device. Specifically, {circle around (1)} first, all types of semiconductor devices to be developed and mass-produced are classified into several groups. {circle around (2)} A test semiconductor device is developed which has the same number of elements, the same gate area, the same multi-layer wiring length and the same number of contact holes as the average number of elements, the average gate area, the average wiring length and the average number of contact holes of the semiconductor devices included in one of the type groups, respectively. The testing semiconductor device has main features (design rules, MOSFET structure, wiring structure, etc.) common to the types included in its corresponding type group, and a failed portion thereof, if any, can be easily detected by an analysis using a tester.
摘要翻译：在批量生产多种类型的半导体器件的情况下设置适当的初始故障筛选条件的方法中，每种类型的器件被少量制造，不考虑每种类型的产品进行加速度测试的步骤，使用测试半导体器件来估计每种类型的半导体器件市场的故障率。具体来说，首先，围绕（1）圆）将要开发和批量生产的所有类型的半导体器件分为几组。 {circle around（2）}开发了一种测试半导体器件，其具有与元件的平均数目相同数量的元件，相同的栅极面积，相同的多层布线长度和相同数量的接触孔，平均栅极面积，平均布线长度和包括在一个类型组中的半导体器件的接触孔的平均数量。测试半导体器件具有与其对应类型组中包括的类型相同的主要特征（设计规则，MOSFET结构，布线结构等），并且其故障部分（如果有的话）可以通过使用测试仪的分析容易地检测。

2. 发明授权

US06223097B1 Semiconductor integrated circuit device, method of estimating failure ratio of such devices on the market, and method of manufacturing the devices 失效
标题翻译：半导体集成电路器件，市场上这种器件的故障率的估计方法以及器件的制造方法
公开(公告)号：US06223097B1
公开(公告)日：2001-04-24
申请号：US09265876
申请日：1999-03-11
申请人： Takehiro Hashimoto , Yutaka Tanaka , Tetsuya Asami , Youichi Satou , Noriaki Okumiya
发明人： Takehiro Hashimoto , Yutaka Tanaka , Tetsuya Asami , Youichi Satou , Noriaki Okumiya
IPC分类号： B07C1700
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： In a method for setting appropriate initial-failure screening conditions when mass-producing semiconductor devices of multiple types, devices of each type being manufactured in a small number, the step of subjecting products of every type to an acceleration test is excluded, and instead, the failure ratio on the market of semiconductor devices of each type is estimated using a testing semiconductor device. Specifically, {circle around (1)} first, all types of semiconductor devices to be developed and mass-produced are classified into several groups. {circle around (2)} A test semiconductor device is developed which has the same number of elements, the same gate area, the same multi-layer wiring length and the same number of contact holes as the average number of elements, the average gate area, the average wiring length and the average number of contact holes of the semiconductor devices included in one of the type groups, respectively. The testing semiconductor device has main features (design rules, MOSFET structure, wiring structure, etc.) common to the types included in its corresponding type group, and a failed portion thereof, if any, can be easily detected by an analysis using a tester.
摘要翻译：在批量生产多种类型的半导体器件的情况下设置适当的初始故障筛选条件的方法中，每种类型的器件被少量制造，不考虑每种类型的产品进行加速度测试的步骤，使用测试半导体器件来估计每种类型的半导体器件市场的故障率。具体来说，首先，围绕（1）圆）将要开发和批量生产的所有类型的半导体器件分为几组。 {circle around（2）}开发了一种测试半导体器件，其具有与元件的平均数目相同数量的元件，相同的栅极面积，相同的多层布线长度和相同数量的接触孔，平均栅极面积，平均布线长度和包括在一个类型组中的半导体器件的接触孔的平均数量。测试半导体器件具有与其对应类型组中包括的类型相同的主要特征（设计规则，MOSFET结构，布线结构等），并且其故障部分（如果有的话）可以通过使用测试仪的分析容易地检测。

3. 发明授权

US5726522A Device for generating high voltage 失效
标题翻译：用于产生高电压的装置
公开(公告)号：US5726522A
公开(公告)日：1998-03-10
申请号：US599180
申请日：1996-02-09
申请人： Takehiro Hashimoto
发明人： Takehiro Hashimoto
IPC分类号： F23Q3/00 , H01L41/113 , H01L41/08
CPC分类号： H02N2/183 , F23Q3/002
摘要： A piezoelectric high voltage device has a high voltage lead line and a fixed container fixedly maintained without using an adhesive agent. A connecting portion between the lead line and a terminal plate is fixed by filling an adhesive agent thereupon. Kinetic energy caused by the hitting of a hammer can be changed into electric energy without any loss by use of Polytetrafluoroethylene.
摘要翻译：压电高压装置具有高电压引线和固定容器，固定地保持不使用粘合剂。通过在其上填充粘合剂来固定引线与端子板之间的连接部分。锤击锤引起的动能可以通过使用聚四氟乙烯变成电能而没有任何损失。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式