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1. 发明授权

US07833957B2 Removing solution 有权
标题翻译：清除解决方案
公开(公告)号：US07833957B2
公开(公告)日：2010-11-16
申请号：US10525249
申请日：2003-08-21
申请人： Mitsushi Itano , Takashi Kanemura , Shingo Nakamura , Fumihiro Kamiya , Takehiko Kezuka
发明人： Mitsushi Itano , Takashi Kanemura , Shingo Nakamura , Fumihiro Kamiya , Takehiko Kezuka
IPC分类号： C11D7/50
CPC分类号： H01L21/02063 , C11D7/08 , C11D7/24 , C11D7/263 , C11D7/264 , C11D7/265 , C11D7/28 , C11D7/32 , C11D7/3263 , C11D7/34 , C11D11/0047 , G03F7/42 , G03F7/422 , G03F7/423 , G03F7/425 , G03F7/426 , G03F7/428 , H01L21/02071 , H01L21/31133 , H01L21/31138 , H01L21/76802 , H01L21/76838 , H05K3/26
摘要： The present invention provides a resist-removing solution for low-k film and a cleaning solution for via holes or capacitors, the solutions comprising hydrogen fluoride (HF) and at least one member selected from the group consisting of organic acids and organic solvents. The invention also provides a method of removing resist and a method of cleaning via holes or capacitors by the use of the solutions.
摘要翻译：本发明提供了一种用于低k膜的抗蚀剂去除溶液和用于通孔或电容器的清洗溶液，所述溶液包含氟化氢（HF）和选自有机酸和有机溶剂中的至少一种。本发明还提供一种通过使用溶液去除抗蚀剂的方法和清洁通孔或电容器的方法。

2. 发明申请

US20100112821A1 ETCHING SOLUTION 有权
标题翻译：蚀刻解决方案
公开(公告)号：US20100112821A1
公开(公告)日：2010-05-06
申请号：US12595424
申请日：2008-04-08
申请人： Mitsushi Itano , Shingo Nakamura , Takehiko Kezuka , Daisuke Watanabe
发明人： Mitsushi Itano , Shingo Nakamura , Takehiko Kezuka , Daisuke Watanabe
IPC分类号： H01L21/306 , C09K13/08
CPC分类号： C09K13/08 , C09K13/00 , C09K13/06 , C09K15/00 , H01L21/02052 , H01L21/02063 , H01L21/30604 , H01L21/31053 , H01L21/31105 , H01L21/31111 , H01L21/31133 , H01L21/32134 , H01L21/76814
摘要： The present invention provides an etching solution in which a change in the composition due to the evaporation of the chemical solution or the like is small, thus reducing the frequency with which the chemical solution must be replaced, and in which the time-dependent change in etch rate is also small, thus allowing uniform etching of a silicon oxide film. Specifically, the present invention relates to an etching solution, a process of producing the same, and an etching process using the same, in which the etching solution includes hydrofluoric acid (a), ammonium fluoride (b), and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia; the concentration of ammonium fluoride (b) is not higher than 8.2 mol/kg, and the total amount of ammonium fluoride (b) and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia is not less than 9.5 mol/kg.
摘要翻译：本发明提供了一种蚀刻溶液，其中由于化学溶液等的蒸发而导致的组成变化小，从而降低了化学溶液必须被更换的频率，并且其中时间依赖性变化蚀刻速率也很小，从而允许均匀蚀刻氧化硅膜。具体地说，本发明涉及一种蚀刻溶液及其制造方法及使用该方法的蚀刻方法，其中蚀刻溶液包括氢氟酸（a），氟化铵（b）和形成的盐（c）在氟化氢和沸点高于氨的沸点之间; 氟化铵（b）的浓度不高于8.2mol / kg，氟化氢和沸点高于氨的碱之间形成的氟化铵（b）和盐（c）的总量不是小于9.5mol / kg。

3. 发明申请

US20050054549A1 Detergent composition 审中-公开
标题翻译：洗涤剂组成
公开(公告)号：US20050054549A1
公开(公告)日：2005-03-10
申请号：US10948306
申请日：2004-09-24
申请人： Takehiko Kezuka , Mitsushi Itano
发明人： Takehiko Kezuka , Mitsushi Itano
IPC分类号： C11D3/02 , C11D3/43 , C11D7/10 , C11D7/50 , C11D11/00 , G03F7/42 , H01L21/306 , C11D17/00
CPC分类号： G03F7/423 , C11D3/042 , C11D3/43 , C11D7/10 , C11D7/5004 , C11D11/0047 , G03F7/422 , H01L21/02063
摘要： A cleaning composition comprising (1) at least one of fluoride salts and hydrogendifluoride salts; (2) an organic solvent having a hetero atom or atoms; and (3) water; a method of cleaning metal gate, contact hole, via hole and capacitor using the composition; a method of cleaning a residual polymer derived from a resist using the composition; and a method of cleaning after CMP using the composition.
摘要翻译：一种清洁组合物，其包含（1）氟化物盐和二氢
化甘油醚盐中的至少一种; （2）具有杂原子或原子的有机溶剂; 和（3）水; 使用该组合物清洗金属栅极，接触孔，通孔和电容器的方法; 使用该组合物清洗源自抗蚀剂的残留聚合物的方法; 以及使用该组合物在CMP之后进行清洗的方法。

4. 发明授权

US6159865A Wafer treating solution and method for preparing the same 失效
标题翻译：晶圆处理液及其制备方法
公开(公告)号：US6159865A
公开(公告)日：2000-12-12
申请号：US523216
申请日：2000-03-10
申请人： Takehiko Kezuka , Makoto Suyama , Fumihiro Kamiya , Mitsushi Itano
发明人： Takehiko Kezuka , Makoto Suyama , Fumihiro Kamiya , Mitsushi Itano
IPC分类号： C11D1/22 , C11D1/24 , C11D1/29 , C11D3/02 , C11D3/39 , C11D7/08 , C11D11/00 , H01L21/306 , H01L21/302 , C09K13/00 , C09K13/04 , C09K13/06 , C09K13/08
CPC分类号： H01L21/02052 , C11D1/24 , C11D1/29 , C11D3/042 , C11D3/3947 , C11D7/08 , C11D11/0047
摘要： The present invention provides a wafer treating solution in which at least one of C.sub.n H.sub.2n+1 ph(SO.sub.3 M)Oph(SO.sub.3 M) wherein ph is a phenylene group, n is 5 to 20, and M is a hydrogen or salt; C.sub.n H.sub.2n+1 phO(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein ph is a phenylene group, n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt; and C.sub.n H.sub.2n+1 O(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt, is dissolved in 0.1 to 1000 ppm into a 20 to 60 wt % of hydrogen fluoride (HF), and the remainder is water (100 wt % in total), and a method for preparing a low concentration of wafer treating solution by adding water, H.sub.2 O.sub.2, HNO.sub.3, CH.sub.3 COOH, NH.sub.4 F or the like, into the above solution. The present invention also provides a wafer treating solution in which at least one of surfactants represented by C.sub.n H.sub.2n+1 ph(SO.sub.3 M)Oph(SO.sub.3 M) wherein ph is a phenylene group, n is 5 to 20, and M is a hydrogen or salt; C.sub.n H.sub.2n+1 phO(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein ph is a phenylene group, n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt; and C.sub.n H.sub.2n+1 O(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt, is dissolved in 0.01 to 1000 ppm in at least one of HF, H.sub.2 O.sub.2, HNO.sub.3, CH.sub.3 COOH, NH.sub.4 F, HCl, H.sub.3 PO.sub.4 and an ammonium hydroxide represented by a formula:[(R.sub.1)(R.sub.2)(R.sub.3)(R.sub.4)N].sup.+ OH.sup.-wherein R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are an alkyl group of 1 to 6 carbon atoms which may have a hydroxyl group as a substitutent, and the remainder is water (100 wt % in total).
摘要翻译：本发明提供一种晶片处理溶液，其中ph为亚苯基，n为5〜20，M为氢或盐的CnH2n + 1ph（SO3M）Oph（SO3M）中的至少一种; C n H 2n + 1phO（CH 2 CH 2 O）m SO 3 M，其中ph为亚苯基，n为5至20，m为0至20，M为氢或盐; 和C n H 2n + 10（CH 2 CH 2 O）m SO 3 M，其中n为5至20，m为0至20，M为氢或盐，溶解在20至60重量％的氟化氢（HF）中，为0.1至1000ppm，其余为水（总计100重量％），以及通过向上述溶液中加入水，H 2 O 2，HNO 3，CH 3 COOH，NH 4 F等制备低浓度晶片处理溶液的方法。本发明还提供一种晶片处理溶液，其中至少一种由CnH2n + 1ph（SO3M）Oph（SO3M）表示的表面活性剂，其中ph为亚苯基，n为5至20，M为氢或盐; C n H 2n + 1phO（CH 2 CH 2 O）m SO 3 M，其中ph为亚苯基，n为5至20，m为0至20，M为氢或盐; 和C n H 2n + 10（CH 2 CH 2 O）m SO 3 M，其中n为5至20，m为0至20，M为氢或盐，在HF，H 2 O 2，HNO 3，CH 3 COOH，NH 4 F中的至少一种中溶解于0.01至1000ppm ，HCl，H 3 PO 4和由式[R 1）（R 2）（R 3）（R 4）N] + OH表示的氢氧化铵，其中R 1，R 2，R 3和R 4是1至6个碳原子的烷基，可以具有羟基作为取代基，其余为水（总共100重量％）。

5. 发明申请

US20060138399A1 Removing solution 有权
标题翻译：清除解决方案
公开(公告)号：US20060138399A1
公开(公告)日：2006-06-29
申请号：US10525249
申请日：2003-08-21
申请人： Mitsushi Itano , Takashi Kanemura , Shingo Nakamura , Fumihiro Kamiya , Takehiko Kezuka
发明人： Mitsushi Itano , Takashi Kanemura , Shingo Nakamura , Fumihiro Kamiya , Takehiko Kezuka
IPC分类号： H01L29/08 , C11D11/00
CPC分类号： H01L21/02063 , C11D7/08 , C11D7/24 , C11D7/263 , C11D7/264 , C11D7/265 , C11D7/28 , C11D7/32 , C11D7/3263 , C11D7/34 , C11D11/0047 , G03F7/42 , G03F7/422 , G03F7/423 , G03F7/425 , G03F7/426 , G03F7/428 , H01L21/02071 , H01L21/31133 , H01L21/31138 , H01L21/76802 , H01L21/76838 , H05K3/26
摘要： The present invention provides a resist-removing solution for low-k film and a cleaning solution for via holes or capacitors, the solutions comprising hydrogen fluoride (HF) and at least one member selected from the group consisting of organic acids and organic solvents. The invention also provides a method of removing resist and a method of cleaning via holes or capacitors by the use of the solutions.
摘要翻译：本发明提供了一种用于低k膜的抗蚀剂去除溶液和用于通孔或电容器的清洗溶液，所述溶液包含氟化氢（HF）和选自有机酸和有机溶剂中的至少一种。本发明还提供一种通过使用溶液去除抗蚀剂的方法和清洁通孔或电容器的方法。

6. 发明授权

US6068788A Wafer-cleaning solution and process for the production thereof 失效
标题翻译：晶圆清洗液及其生产方法
公开(公告)号：US6068788A
公开(公告)日：2000-05-30
申请号：US51492
申请日：1998-04-22
申请人： Takehiko Kezuka , Makoto Suyama , Fumihiro Kamiya , Mitsushi Itano
发明人： Takehiko Kezuka , Makoto Suyama , Fumihiro Kamiya , Mitsushi Itano
IPC分类号： C11D1/22 , C11D1/24 , C11D1/29 , C11D3/02 , C11D3/39 , C11D7/08 , C11D11/00 , H01L21/306 , C09K13/04 , C09K13/06
CPC分类号： H01L21/02052 , C11D1/24 , C11D1/29 , C11D11/0047 , C11D3/042 , C11D3/3947 , C11D7/08
摘要： The present invention provides a wafer treating solution in which at least one of C.sub.n H.sub.2n+1 ph(SO.sub.3 M)Oph(SO.sub.3 M) wherein ph is a phenylene group, n is 5 to 20, and M is a hydrogen or salt; C.sub.n H.sub.2n+1 phO(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein ph is a phenylene group, n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt; and C.sub.n H.sub.2n+1 O(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt, is dissolved in 0.1 to 1000 ppm into a 20 to 60 wt % of hydrogen fluoride (HF), and the remainder is water (100 wt % in total), and a method for preparing a low concentration of wafer treating solution by adding water, H.sub.2 O.sub.2, HNO.sub.3, CH.sub.3 COOH, NH.sub.4 F or the like, into the above solution. The present invention also provides a wafer treating solution in which at least one of surfactants represented by C.sub.n H.sub.2n+1 ph(SO.sub.3 M)Oph(SO.sub.3 M) wherein ph is a phenylene group, n is 5 to 20, and M is a hydrogen or salt; C.sub.n H.sub.2n+1 ph(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein ph is a phenylene group, n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt; and C.sub.n H.sub.2n+1 O(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt, is dissolved in 0.01 to 1000 ppm in at least one of HF, H.sub.2 O.sub.2, HNO.sub.3, CH.sub.3 COOH, NH.sub.4 F, HCl, H.sub.3 PO.sub.4 and an ammonium hydroxide represented by a formula:[(R.sub.1)(R.sub.2)(R.sub.3)(R.sub.4)N].sup.+ OH.sup.-wherein R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are an alkyl group of 1 to 6 carbon atoms which may have a hydroxyl group as a substitutent, and the remainder is water (100 wt % in total).
摘要翻译： PCT No.PCT / JP96 / 03313。 371日期：1998年4月22日 102（e）1998年4月22日PCT PCT 1996年11月11日PCT公布。第WO97 / 18582号公报日期：1997年5月22日本发明提供一种晶片处理溶液，其中ph为亚苯基，n为5〜20，M为氢或盐的CnH2n + 1ph（SO3M）Oph（SO3M）中的至少一种; C n H 2n + 1phO（CH 2 CH 2 O）m SO 3 M，其中ph为亚苯基，n为5至20，m为0至20，M为氢或盐; 和C n H 2n + 10（CH 2 CH 2 O）m SO 3 M，其中n为5至20，m为0至20，M为氢或盐，溶解在20至60重量％的氟化氢（HF）中，为0.1至1000ppm，其余为水（总计100重量％），以及通过向上述溶液中加入水，H 2 O 2，HNO 3，CH 3 COOH，NH 4 F等制备低浓度晶片处理溶液的方法。本发明还提供一种晶片处理溶液，其中至少一种由CnH2n + 1ph（SO3M）Oph（SO3M）表示的表面活性剂，其中ph为亚苯基，n为5至20，M为氢或盐; C n H 2n + 1ph（CH 2 CH 2 O）m SO 3 M，其中ph为亚苯基，n为5至20，m为0至20，M为氢或盐; 和C n H 2n + 10（CH 2 CH 2 O）m SO 3 M，其中n为5至20，m为0至20，M为氢或盐，在HF，H 2 O 2，HNO 3，CH 3 COOH，NH 4 F中的至少一种中溶解于0.01至1000ppm ，HCl，H 3 PO 4和由式[R 1）（R 2）（R 3）（R 4）N] + OH表示的氢氧化铵，其中R 1，R 2，R 3和R 4是1至6个碳原子的烷基，可以具有羟基作为取代基，其余为水（总共100重量％）。

7. 发明授权

US5763375A Cleaning agents and cleaning method 失效
标题翻译：清洁剂和清洁方法
公开(公告)号：US5763375A
公开(公告)日：1998-06-09
申请号：US682590
申请日：1996-07-24
申请人： Takehiko Kezuka , Mitsushi Itano , Motonobu Kubo
发明人： Takehiko Kezuka , Mitsushi Itano , Motonobu Kubo
IPC分类号： C11D1/04 , C11D1/00 , C11D1/72 , C11D3/02 , C11D7/08 , C11D11/00 , C23G1/02 , H01L21/304 , H01L21/306 , H01L21/308 , C11D7/28 , C11D7/32
CPC分类号： H01L21/02052 , C11D1/004 , C11D11/0047 , C11D3/042 , C11D7/08
摘要： A cleaning agent characterized in that the agent comprises 0.1 to 4 wt. % of hydrofluoric acid, a surfactant of the following formula (1) in a concentration of 50 to 1500 ppm or a surfactant of the following formula (2) or (3) in a concentration of 50 to 100000 ppm, and the balance water, and a cleaning method of the surfaces of silicon wafers and the like using the agent RfCOONH.sub.4 (1) wherein Rf is a fluorine-containing hydrocarbon group having 5 to 9 carbon atoms Rf'O(CH.sub.2 CH.sub.2 O)nR (2) Rf'(CH.sub.2 CH.sub.2 O)nR (3) wherein Rf' is a fluorine-containing hydrocarbon group having 5 to 15 carbon atoms, R is hydrogen or alkyl having 1 to 4 carbon atoms, and n is 5 to 20.
摘要翻译： PCT No.PCT / JP95 / 00086 Sec。 371日期：1996年7月24日 102（e）日期1996年7月24日PCT 1995年1月25日PCT PCT。 WO95 / 20642 PCT出版物日期1995年8月3日一种清洗剂，其特征在于，所述试剂含有0.1〜4重量％％的氢氟酸，浓度为50〜1500ppm的下述式（1）的表面活性剂或下述式（2）或（3）的表面活性剂的浓度为50〜100000ppm，余量为水，以及使用其中Rf是具有5至9个碳原子的含氟烃基的化合物R fCOONH 4（1）的硅晶片表面的清洁方法R 10'（CH 2 CH 2 O）n R（2）R f'（CH 2 CH 2 O）n R 3）其中，Rf'为碳原子数5〜15的含氟烃基，R为氢或碳原子数为1〜4的烷基，n为5〜20。

8. 发明申请

US20060178282A1 Process for production of etching or cleaning fluids 审中-公开
标题翻译：蚀刻或清洗液生产工艺
公开(公告)号：US20060178282A1
公开(公告)日：2006-08-10
申请号：US10549181
申请日：2004-03-10
申请人： Makoto Suyama , Takehiko Kezuka , Mitsushi Itano
发明人： Makoto Suyama , Takehiko Kezuka , Mitsushi Itano
IPC分类号： C11D7/32
CPC分类号： C11D7/10 , C11D7/06 , C11D7/08 , C11D7/3209 , C11D11/0047 , H01L21/02052
摘要： A method for producing an etching or cleaning solution comprising (1) at least one member selected from the group consisting of fluoride salts and bifluoride salts formed from at least one member selected from the group consisting of ammonia, hydroxylamines, aliphatic amines, aromatic amines, aliphatic quaternary ammoniums and aromatic quaternary ammoniums with hydrofluoric acid; (2) at least one heteroatom-containing organic solvent; and (3) water, the method comprising the steps of: Step 1: mixing an aqueous hydrofluoric acid solution with at least one heteroatom-containing organic solvent, and Step 2: mixing the mixture obtained in Step 1 with at least one member selected from the group consisting of ammonia, hydroxylamines, aliphatic amines, aromatic amines, aliphatic quaternary ammoniums, aromatic quaternary ammoniums, and fluorides thereof.
摘要翻译：一种蚀刻或清洗溶液的制造方法，其特征在于，含有（1）选自由氨，羟胺，脂肪族胺，芳香族胺等中的至少一种构成的氟化物盐和氟化氢中的至少1种以上的成分，脂肪族季铵和芳族季铵与氢氟酸; （2）至少一个含杂原子的有机溶剂; 和（3）水，所述方法包括步骤1：将含氟氢酸水溶液与至少一种含杂原子的有机溶剂混合，步骤2：将步骤1中获得的混合物与至少一种选自由氨，羟胺，脂族胺，芳族胺，脂族季铵，芳族季铵及其氟化物组成的组。

9. 发明授权

US07052627B1 Etching solution, etched article and method for etched article 失效
标题翻译：蚀刻溶液，蚀刻制品和蚀刻制品的方法
公开(公告)号：US07052627B1
公开(公告)日：2006-05-30
申请号：US09856361
申请日：1999-11-22
申请人： Takehiko Kezuka , Makoto Suyama , Mitsushi Itano
发明人： Takehiko Kezuka , Makoto Suyama , Mitsushi Itano
IPC分类号： C09K13/00
CPC分类号： H01L21/31111 , C09K13/08
摘要： An etching solution which exhibits etching rates for both of a thermally oxidized film (THOX) and a boron-phosphorus-glass film (BPSG) of 100 Å/min or less at 25° C., and an etching rate ratio: etching rate for BPSG/etching rate for a thermally oxidized film (THOX) of 1.5 or less.
摘要翻译：在25℃下表现出热氧化膜（THOX）和硼磷玻璃膜（BPSG）的蚀刻速率为100 / min以下的蚀刻溶液，蚀刻速率比：蚀刻速度热氧化膜（THOX）的BPSG /蚀刻速率为1.5以下。

10. 发明申请

US20060091355A1 Solution and method for removing ashing residue in Cu/low-k multilevel interconnection structure 审中-公开
标题翻译：在Cu / low-k多层互连结构中去除灰渣的方法和方法
公开(公告)号：US20060091355A1
公开(公告)日：2006-05-04
申请号：US11259128
申请日：2005-10-27
申请人： Mitsushi Itano , Takehiko Kezuka , Takashi Kanemura
发明人： Mitsushi Itano , Takehiko Kezuka , Takashi Kanemura
IPC分类号： C09K13/00 , B44C1/22 , H01L29/00 , H01L21/302
CPC分类号： H01L21/76814 , H01L21/02063
摘要： The present invention relates to a removing solution for removing ashing residue formed by dry etching and/or ashing on a Cu/low-k multilevel interconnection structure, wherein the removing solution comprises 0.007 to 0.04 mol/kg of acid, a nonmetallic fluoride salt whose concentration is at least 20 times as great as that of the acid, and water.
摘要翻译：本发明涉及一种用于去除在Cu / low-k多层互连结构上通过干蚀刻和/或灰化形成的灰化残留物的去除溶液，其中除去溶液包含0.007至0.04mol / kg酸，非金属氟化物盐，其为浓度至少是酸和水的20倍。

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