专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 外观设计

USD331624S Fin for use in a fin and tube heat exchanger in an air conditioner 失效
公开(公告)号：USD331624S
公开(公告)日：1992-12-08
申请号：US314838
申请日：1989-02-24
申请人： Takayuki Yoshida , Tomohumi Tezuka , Masao Huzii
设计人： Takayuki Yoshida , Tomohumi Tezuka , Masao Huzii

2. 外观设计

USD330760S Fin for use in a fin and tube heating exchanger in an air conditioner 失效
公开(公告)号：USD330760S
公开(公告)日：1992-11-03
申请号：US314840
申请日：1989-02-24
申请人： Takayuki Yoshida , Tomohumi Tezuka , Masao Huzii
设计人： Takayuki Yoshida , Tomohumi Tezuka , Masao Huzii

3. 外观设计

USD329281S Fin for use in a fin and tube heat exchanger in an air conditioner 失效
公开(公告)号：USD329281S
公开(公告)日：1992-09-08
申请号：US313810
申请日：1989-02-23
申请人： Takayuki Yoshida , Tomohumi Tezuka , Masao Huzii
设计人： Takayuki Yoshida , Tomohumi Tezuka , Masao Huzii

4. 发明授权

US5109919A Heat exchanger 失效
标题翻译：热交换器
公开(公告)号：US5109919A
公开(公告)日：1992-05-05
申请号：US671645
申请日：1991-03-20
申请人： Kiyoshi Sakuma , Takayuki Yoshida , Tomohumi Tezuka , Katsuyuki Aoki , Makoto Yamada , Masao Hujii , Ken Morinushi
发明人： Kiyoshi Sakuma , Takayuki Yoshida , Tomohumi Tezuka , Katsuyuki Aoki , Makoto Yamada , Masao Hujii , Ken Morinushi
IPC分类号： F28F1/32
CPC分类号： F28F1/325 , Y10S165/502
摘要： A fin-and-tube heat exchanger comprises a fin plate, a heat exchanger tube having portions extending through the fin plate, a plurality of fin collars formed in the plate, wherein louvers are provided so as to surround the tube portions except areas nearest to the collars, the louvers are in parallel with one another and project from alternately both surfaces of the plate, the louver which is located at the trailing edge side and at a position near to a central line of the tube bank is longitudinally extended so as to be along the collars and has opposite rising ends extending from the plate slanted toward the corresponding tube portions at an angle of 35 deg or below to the flow direction of the fluid, and the louver which is located at a position nearer to the trailing edge is also longitudinally extended and has opposite rising ends extending from the plate slanted toward the corresponding tube portions at an angle of 35 deg or above to the flow direction of the fluid so that the angle between the rising ends slanted at an angle of 35 deg or above and the rising ends slanted at an angle of 35 or below is 35 deg or below.
摘要翻译：翅片管热交换器包括翅片板，具有延伸穿过鳍板的部分的热交换器管，形成在板中的多个翅片环，其中设置百叶窗以围绕管部分，除了最靠近所述套环彼此平行并且从所述板的交替的两个表面突出，位于所述后缘侧的所述百叶窗和靠近所述管堤的中心线的位置纵向延伸，以便沿着轴环并且具有相对于流体的流动方向以35度或更小的角度从板向相应的管部分延伸的相对的上升端，并且位于更靠近后缘的位置的百叶窗是也纵向延伸并且具有相对于流体的流动方向以35度或更大的角度从板向相应的管部分倾斜延伸的相对的上升端，使得在以35度或以上的角度倾斜的上升端和以35度以下的角度倾斜的上升端之间的距离为35度以下。

5. 发明授权

US08835443B2 Pyrimidine compound and medical use thereof 有权
标题翻译：嘧啶化合物及其医疗用途
公开(公告)号：US08835443B2
公开(公告)日：2014-09-16
申请号：US12626443
申请日：2009-11-25
申请人： Hisashi Kawasaki , Hiroyuki Abe , Kazuhide Hayakawa , Tetsuya Iida , Shinichi Kikuchi , Takayuki Yamaguchi , Toyomichi Nanayama , Hironori Kurachi , Masahiro Tamaru , Yoshikazu Hori , Mitsuru Takahashi , Takayuki Yoshida , Toshiyuki Sakai
发明人： Hisashi Kawasaki , Hiroyuki Abe , Kazuhide Hayakawa , Tetsuya Iida , Shinichi Kikuchi , Takayuki Yamaguchi , Toyomichi Nanayama , Hironori Kurachi , Masahiro Tamaru , Yoshikazu Hori , Mitsuru Takahashi , Takayuki Yoshida , Toshiyuki Sakai
IPC分类号： A61K31/519 , C07D239/545 , C07D471/04 , C07D487/04
CPC分类号： C07D471/04 , A61K31/519 , C07C275/30 , C07C275/50 , C07C2601/16 , C07D239/545 , C07D239/553 , C07D239/62 , C07D471/16 , C07D487/04 , C07F9/53
摘要： The present invention relates to a pyrimidine compound or a pharmaceutically acceptable salt thereof represented by the following formula [I] wherein each symbol is as defined in the specification and a method of therapeutically or prophylactically treating an undesirable cell proliferation, comprising administering such a compound. The compound of the present invention has superior activity in suppressing undesirable cell proliferation, particularly, an antitumor activity, and is useful as an antitumor agent for the prophylaxis or treatment of cancer, rheumatism, and the like. In addition, the compound of the present invention can be a more effective antitumor agent when used in combination with other antitumor agents such as an alkylating agent or metabolism antagonist.
摘要翻译：本发明涉及由下式[I]表示的嘧啶化合物或其药学上可接受的盐，其中每个符号如说明书中所定义，以及治疗或预防性治疗不期望的细胞增殖的方法，包括施用这种化合物。本发明的化合物在抑制不期望的细胞增殖，特别是抗肿瘤活性方面具有优异的活性，可用作预防或治疗癌症，风湿病等的抗肿瘤剂。此外，当与其它抗肿瘤剂如烷化剂或代谢拮抗剂组合使用时，本发明的化合物可以是更有效的抗肿瘤剂。

6. 发明授权

US08330188B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08330188B2
公开(公告)日：2012-12-11
申请号：US13067721
申请日：2011-06-22
申请人： Takayuki Yoshida , Kimihito Kuwabara , Takuma Motofuji , Toshiyuki Fukuda
发明人： Takayuki Yoshida , Kimihito Kuwabara , Takuma Motofuji , Toshiyuki Fukuda
IPC分类号： H01L27/10 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/823807 , H01L21/823871 , H01L24/10 , H01L29/7842 , H01L2224/05001 , H01L2224/05023 , H01L2224/05026 , H01L2224/05548 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/13091 , H01L2924/00 , H01L2224/05599 , H01L2224/05099
摘要： A semiconductor device 20 formed on a semiconductor chip substrate 30 has a plurality of circuit blocks made up of circuits each containing at least a metal oxide semiconductor (MOS) transistor 36, the circuit blocks being covered on top with a protective film 41 to protect the circuits. A plurality of bumps 23a, 23b, 23c are formed, at least via the protective film 41, only on circuit blocks whose current-carrying ability and threshold voltage do not satisfy predetermined values and which are in need of performance enhancement. The bumps 23a, 23b, 23c impose stresses on the MOS transistors 36, increasing the mobility of the MOS transistors 36 and thereby improving the performance of the semiconductor device 20.
摘要翻译：形成在半导体芯片基板30上的半导体装置20具有由至少包含金属氧化物半导体（MOS）晶体管36的电路构成的多个电路块，电路块由保护膜41覆盖在顶部，以保护电路。至少通过保护膜41仅形成多个凸起23a，23b，23c，其电流承载能力和阈值电压不满足预定值并且需要性能提高的电路块。凸起23a，23b，23c在MOS晶体管36上施加应力，增加MOS晶体管36的迁移率，从而提高半导体器件20的性能。

7. 发明授权

US07985988B2 Semiconductor device having circuit blocks in a single crystal layer, and bumps on certain blocks 有权
标题翻译：具有单晶层中的电路块的半导体器件和某些块上的凸块
公开(公告)号：US07985988B2
公开(公告)日：2011-07-26
申请号：US11898305
申请日：2007-09-11
申请人： Takayuki Yoshida , Kimihito Kuwabara , Takuma Motofuji , Toshiyuki Fukuda
发明人： Takayuki Yoshida , Kimihito Kuwabara , Takuma Motofuji , Toshiyuki Fukuda
IPC分类号： H01L27/10 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/823807 , H01L21/823871 , H01L24/10 , H01L29/7842 , H01L2224/05001 , H01L2224/05023 , H01L2224/05026 , H01L2224/05548 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/13091 , H01L2924/00 , H01L2224/05599 , H01L2224/05099
摘要： A semiconductor device 20 formed on a semiconductor chip substrate 30 has a plurality of circuit blocks made up of circuits each containing at least a metal oxide semiconductor (MOS) transistor 36, the circuit blocks being covered on top with a protective film 41 to protect the circuits. A plurality of bumps 23a, 23b, 23c are formed, at least via the protective film 41, only on circuit blocks whose current-carrying ability and threshold voltage do not satisfy predetermined values and which are in need of performance enhancement. The bumps 23a, 23b, 23c impose stresses on the MOS transistors 36, increasing the mobility of the MOS transistors 36 and thereby improving the performance of the semiconductor device 20.
摘要翻译：形成在半导体芯片基板30上的半导体装置20具有由至少包含金属氧化物半导体（MOS）晶体管36的电路构成的多个电路块，电路块由保护膜41覆盖在顶部，以保护电路。至少通过保护膜41仅形成多个凸起23a，23b，23c，其电流承载能力和阈值电压不满足预定值并且需要性能提高的电路块。凸起23a，23b，23c在MOS晶体管36上施加应力，增加MOS晶体管36的迁移率，从而提高半导体器件20的性能。

8. 发明申请

US20090294960A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20090294960A1
公开(公告)日：2009-12-03
申请号：US12368763
申请日：2009-02-10
申请人： Takayuki Yoshida
发明人： Takayuki Yoshida
IPC分类号： H01L23/485 , H01L23/48
CPC分类号： H01L24/73 , H01L23/49816 , H01L23/50 , H01L24/12 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0657 , H01L2223/6611 , H01L2224/05554 , H01L2224/16145 , H01L2224/32145 , H01L2224/451 , H01L2224/48091 , H01L2224/48095 , H01L2224/48227 , H01L2224/49171 , H01L2224/49175 , H01L2225/0651 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06555 , H01L2225/06562 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01033 , H01L2924/01082 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/00 , H01L2224/45099 , H01L2924/00015 , H01L2224/05599 , H01L2924/00012
摘要： A semiconductor device, including: a substrate having an upper face on which a first ground pad, a first power supply pad, a first signal pad, and a second signal pad are formed; a first substrate formed on the substrate and having an upper face on which a third signal pad connected to the first signal pad and a first circuit are formed; and a semiconductor element including a second substrate having a reverse face on which a bump electrode connected to the first circuit and a second circuit are formed and an upper face on which a fourth signal pad connected to the second signal pad is formed, with a signal through via connected to the second circuit and the fourth signal pad being buried in the second substrate.
摘要翻译：一种半导体器件，包括：具有上表面的衬底，其上形成有第一接地焊盘，第一电源焊盘，第一信号焊盘和第二信号焊盘; 形成在所述基板上并具有上表面的第一基板，形成有连接到所述第一信号焊盘的第三信号焊盘和第一电路; 以及半导体元件，包括具有反面的第二基板，其上形成有连接到第一电路的凸起电极和第二电路，以及形成有与第二信号焊盘连接的第四信号焊盘的上表面，具有信号通孔连接到第二电路，第四信号焊盘被埋在第二衬底中。

9. 发明申请

US20090206463A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC EQUIPMENT USING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法以及使用其的电子设备
公开(公告)号：US20090206463A1
公开(公告)日：2009-08-20
申请号：US12343936
申请日：2008-12-24
申请人： Takayuki Yoshida
发明人： Takayuki Yoshida
IPC分类号： H01L23/28 , H01L21/56 , H05K1/11
CPC分类号： H05K3/284 , H01L21/565 , H01L23/3128 , H01L25/105 , H01L2224/48227 , H01L2225/1023 , H01L2225/1058 , H01L2924/15311 , H01L2924/15331 , H05K1/117 , H05K2203/095 , H05K2203/1316
摘要： A semiconductor device includes a substrate 2, a semiconductor element 3, a molding resin portion 4, and a plurality of connection terminals 5 arranged on a surface of the substrate around the outer periphery of the molding resin portion 4. In a region B corresponding to a resin passage used to form the molding resin portion 4, a plurality of metal planes 18 and 19 as resin peel-off portions exhibiting a low adhesive strength to the molding resin are arranged in a direction along the resin passage at appropriate intervals. At least one connection terminal 5 is located between the metal planes 18 and 19.
摘要翻译：半导体器件包括基板2，半导体元件3，模制树脂部分4和布置在模制树脂部分4的外周周围的基板的表面上的多个连接端子5.在对应于用于形成模制树脂部分4的树脂通道，作为树脂剥离部分的多个金属平面18和19被布置在沿着树脂通道的适当间隔的方向上。至少一个连接端子5位于金属平面18和19之间。

10. 发明授权

US07497079B2 Exhaust manifold 有权
标题翻译：排气歧管
公开(公告)号：US07497079B2
公开(公告)日：2009-03-03
申请号：US11564389
申请日：2006-11-29
申请人： Takayuki Yoshida , Fuyuki Ito
发明人： Takayuki Yoshida , Fuyuki Ito
IPC分类号： F01N7/10
CPC分类号： F01N13/10
摘要： An exhaust manifold is provided with a plurality of branch pipe parts and a collecting pipe part. The plurality of branch pipe parts are respectively connected to a plurality of exhaust ports of a multicylinder internal combustion engine. The collecting pipe part is formed by merging the plurality of branch pipe parts. The plurality of branch pipe parts and the collecting pipe part are formed by an upper shell member and a lower shell member superposed on each other. A partition plate is attached to at least one of the upper shell member and the lower shell member. The partition plate separates between exhaust gases flowing into the collecting pipe part from two of the branch pipe parts respectively connected to adjacent two of the plurality of exhaust ports.
摘要翻译：排气歧管设有多个支管部分和收集管部分。多个支管部分分别连接到多缸内燃机的多个排气口。收集管部通过使多个支管部分合并而形成。多个分支管部和收集管部由彼此重叠的上壳部件和下壳部件形成。分隔板附接到上壳体构件和下壳体构件中的至少一个。分隔板从分别连接到多个排气口中的相邻两个排气口的两个分支管部分分离流入收集管部分的废气。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式