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    • 1. 发明申请
    • VEHICLE DOOR FRAME AND METHOD OF PRODUCING THE SAME
    • 车门门框及其制造方法
    • US20110308171A1
    • 2011-12-22
    • US12870915
    • 2010-08-30
    • Takayuki OkadaKenji ShimizuGo YamaneMasaki Koyama
    • Takayuki OkadaKenji ShimizuGo YamaneMasaki Koyama
    • B60J5/04
    • B60J5/0402
    • A vehicle door frame includes first and second door frame members which are positioned end-to-end to be butt-welded to each other, wherein each of the first and second door frame members includes a design part, an enclosed section provided on a vehicle interior side, a connecting part which connects an inner surface of the design part with the enclosed section; and first and second dam protrusions which project from the inner surface of the design part and are positioned on opposite sides of the connecting part, respectively. Molten metal is present in the first and second spaces after the molten metal has melted and passed through the inner surface of the design part from the outer surface thereof upon butted ends of the first and second door frame members being butt-welded to each other from the outer surface of the design part.
    • 车门框架包括端对端定位成彼此对接焊接的第一和第二门框架构件,其中第一和第二门框架构件中的每一个包括设计部分,设置在车辆上的封闭部分 内侧,连接部,其将设计部的内表面与封闭部连接; 以及分别从设计部分的内表面突出并且分别位于连接部分的相对侧上的第一和第二坝突起。 熔融金属在第一和第二空间中存在于熔融金属熔化之后,从第二和第二空间的外表面通过设计部件的内表面,将第一和第二门框架构件的对接端彼此对接焊接 设计部分的外表面。
    • 2. 发明授权
    • Vehicle door frame and method of producing the same
    • 车门框及其制造方法
    • US08172125B2
    • 2012-05-08
    • US12870915
    • 2010-08-30
    • Takayuki OkadaKenji ShimizuGo YamaneMasaki Koyama
    • Takayuki OkadaKenji ShimizuGo YamaneMasaki Koyama
    • B23K31/02B60J5/04E06B3/00
    • B60J5/0402
    • A vehicle door frame includes first and second door frame members which are positioned end-to-end to be butt-welded to each other, wherein each of the first and second door frame members includes a design part, an enclosed section provided on a vehicle interior side, a connecting part which connects an inner surface of the design part with the enclosed section; and first and second dam protrusions which project from the inner surface of the design part and are positioned on opposite sides of the connecting part, respectively. Molten metal is present in the first and second spaces after the molten metal has melted and passed through the inner surface of the design part from the outer surface thereof upon butted ends of the first and second door frame members being butt-welded to each other from the outer surface of the design part.
    • 车门框架包括端对端定位成彼此对接焊接的第一和第二门框架构件,其中第一和第二门框架构件中的每一个包括设计部分,设置在车辆上的封闭部分 内侧,连接部,其将设计部的内表面与封闭部连接; 以及分别从设计部分的内表面突出并且分别位于连接部分的相对侧上的第一和第二坝突起。 熔融金属在第一和第二空间中存在于熔融金属熔化之后,从第二和第二空间的外表面通过设计部件的内表面,将第一和第二门框架构件的对接端彼此对接焊接 设计部分的外表面。
    • 5. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08421184B2
    • 2013-04-16
    • US13129980
    • 2010-05-17
    • Masaki KoyamaYoshiko FukudaYuji FukudaMika Ootsuki
    • Masaki KoyamaYutaka Fukuda
    • H01L31/058H03K17/78
    • H01L29/7391H01L24/73H01L29/0834H01L29/7397H01L2224/48472H01L2924/12036H01L2924/13055H01L2924/13091H01L2924/30107H01L2924/00
    • A semiconductor device includes: a semiconductor substrate having a first semiconductor layer and a second semiconductor layer formed on a first surface; a diode having a first electrode and a second electrode; a control pad; a control electrode electrically coupled with the control pad; and an insulation member. The first electrode is formed on a second surface of the first semiconductor layer. The second electrode is formed on the first surface. Current flows between the first electrode and the second electrode. The control pad is arranged on the first surface so that the pad inputs a control signal for controlling an injection amount of a carrier into the first semiconductor layer. The insulation member insulates between the control electrode and the second electrode and between the control electrode and the semiconductor substrate.
    • 半导体器件包括:具有形成在第一表面上的第一半导体层和第二半导体层的半导体衬底; 具有第一电极和第二电极的二极管; 控制板 与所述控制板电耦合的控制电极; 和绝缘构件。 第一电极形成在第一半导体层的第二表面上。 第二电极形成在第一表面上。 电流在第一电极和第二电极之间流动。 控制焊盘设置在第一表面上,使得焊盘输入用于控制载体进入第一半导体层的注入量的控制信号。 绝缘构件在控制电极和第二电极之间以及控制电极和半导体衬底之间绝缘。
    • 6. 发明授权
    • Method for manufacturing semiconductor substrate by using monitor substrate to obtain optimal energy density for laser irradiation of single crystal semiconductor layers
    • 通过使用监视器基板来获得用于单晶半导体层的激光照射的最佳能量密度的半导体衬底的制造方法
    • US07932164B2
    • 2011-04-26
    • US12402518
    • 2009-03-12
    • Akihisa ShimomuraMasaki KoyamaMotoki Nakashima
    • Akihisa ShimomuraMasaki KoyamaMotoki Nakashima
    • H01L21/30H01L21/301H01L21/46
    • H01L27/1266H01L21/76254H01L27/1214H01L29/66772
    • Methods for manufacturing a semiconductor substrate and a semiconductor device by which a high-performance semiconductor element can be formed are provided. A single crystal semiconductor substrate including an embrittlement layer and a base substrate are bonded to each other with an insulating layer interposed therebetween, and the single crystal semiconductor substrate is separated along the embrittlement layer by heat treatment to fix a single crystal semiconductor layer over the base substrate. Next, a plurality of regions of a monitor substrate are irradiated with laser light under conditions of different energy densities, and carbon concentration distribution and hydrogen concentration distribution in a depth direction of each region of the single crystal semiconductor layer which has been irradiated with the laser light is measured. Optimal irradiation intensity of laser light is irradiation intensity with which a local maximum of the carbon concentration and a shoulder peak of the hydrogen concentration are observed. A single crystal semiconductor layer is irradiated with optimal laser light at energy density detected by using the monitor substrate, whereby a semiconductor substrate is manufactured.
    • 提供了可以形成高性能半导体元件的半导体衬底和半导体器件的制造方法。 将包含脆化层和基底基板的单晶半导体基板通过绝缘层彼此接合,通过热处理将单晶半导体基板沿着脆化层分离,将单晶半导体层固定在基板上 基质。 接下来,在能量密度不同的条件下,用激光照射监视器基板的多个区域,并且已经照射了激光的单晶半导体层的各区域的深度方向上的碳浓度分布和氢浓度分布 测光。 激光的最佳照射强度是观察到碳浓度的局部最大值和氢浓度的肩峰值的照射强度。 通过使用监视器基板检测到的能量密度的最佳激光照射单晶半导体层,由此制造半导体衬底。