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    • 3. 发明授权
    • Multi-layer semiconductor photovoltaic device
    • 多层半导体光电器件
    • US4015280A
    • 1977-03-29
    • US622500
    • 1975-10-15
    • Takeshi MatsushitaTakayoshi Mamine
    • Takeshi MatsushitaTakayoshi Mamine
    • H01L31/04H01L31/068H01L31/0687H01L31/10
    • H01L31/0687Y02E10/544
    • A semiconductor photovoltaic device is comprised of 2n layers of alternating p-type and n-type material having respective PN junctions between adjacent layers, wherein n is an integer greater than 1. Each layer has a thickness which is less than the diffusion length of a minority carrier therein. The PN junctions are excited by light which is incident on the device to thereby cause majority carriers to be accumulated in the respective layers so as to forward bias all of the PN junctions. As a result of this forward biasing, minority carriers are injected across a first PN junction fr0m one layer into an adjacent layer and then traverse the next PN junction into the next succeeding layer. The photovoltaic device thus is adapted to supply a voltage and a current to a load.
    • 半导体光伏器件由2n层交替的p型和n型材料构成,在相邻层之间具有相应的PN结,其中n是大于1的整数。每个层的厚度小于a的扩散长度 少数载体。 PN结被入射到器件上的光激发,从而使多数载流子累积在各层中,以便对所有PN结进行正向偏置。 作为这种向前偏置的结果,少数载流子跨越第一PN结fr0m注入相邻层中,然后穿过下一个PN结进入下一个后续层。 因此,光伏器件适于向负载提供电压和电流。