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1. 发明申请

US20080111168A1 TRANSISTOR AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：晶体管及其制造方法
公开(公告)号：US20080111168A1
公开(公告)日：2008-05-15
申请号：US11936106
申请日：2007-11-07
申请人： Takayoshi ANDOU , Kenya KOBAYASHI
发明人： Takayoshi ANDOU , Kenya KOBAYASHI
IPC分类号： H01L29/78 , H01L21/04
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/086 , H01L29/0869 , H01L29/456 , H01L29/66734
摘要： An improved coupling stability between the source region and the source electrode of the transistor is achieved. In the method for manufacturing the MOSFET, the p-type base region is formed in a semiconductor layer, and after the p-type base region is formed in the surface portion of the n+ type source region, the higher concentration source region extending from the side edge of the n+ type source region to the lateral side of the n+ type source region is formed in the surface portion of the p-type base region. Then, the source electrode coupled to the higher concentration source region is formed. This allows providing an improved coupling stability between the source electrode and the source region when a misalignment is occurred in the location for forming the source electrode during the formation of the source electrode to be coupled to the first source region.
摘要翻译：实现了晶体管的源极区域和源极之间的耦合稳定性的改善。在MOSFET的制造方法中，在半导体层中形成p型基极区域，在n +型源极区域的表面部分形成p型基极区域后，从在p型基极区域的表面部分形成有n +型源极区域的侧面与n +型源极区域的侧面。然后，形成耦合到较高浓度源极区的源电极。这允许当在要耦合到第一源极区域的源电极的形成期间在用于形成源电极的位置中发生未对准时，在源电极和源极区域之间提供改进的耦合稳定性。

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