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1. 发明授权

US07372245B2 Semiconductor integrated circuit 失效
标题翻译：半导体集成电路
公开(公告)号：US07372245B2
公开(公告)日：2008-05-13
申请号：US11727559
申请日：2007-03-27
申请人： Takayasu Ito , Mitsuru Hiraki , Masashi Horiguchi , Tadashi Kameyama
发明人： Takayasu Ito , Mitsuru Hiraki , Masashi Horiguchi , Tadashi Kameyama
IPC分类号： G05F3/16 , G05F3/20
CPC分类号： G05F3/222
摘要： A difference between both emitter voltages of a first transistor having an emitter through which a first current flows, and at least one second transistor having an emitter through which such a second current as to reach a current density thereof smaller than that of the emitter of the first transistor flows, is applied across a first resistor. A second resistor is provided between the emitter of the second transistor and a circuit's ground potential. A third resistor and a fourth resistor are respectively provided between collectors of the first and second transistors and a power supply voltage. Such an output voltage that a collector voltage of the first transistor and a collector voltage of the second transistor become equal is formed in response to the collector voltage of the first transistor and the collector voltage of the second transistor and supplied to bases of the first and second transistors in common. A temperature sense voltage is formed from a connecting point of the first and second resistors.
摘要翻译：具有第一电流流经的发射极的第一晶体管的两个发射极电压和至少一个具有发射极的第二晶体管之间的差异，通过该发射极，这样的第二电流达到其电流密度小于第一晶体管流过第一电阻器。第二电阻器设置在第二晶体管的发射极和电路的地电位之间。分别在第一和第二晶体管的集电极之间设置第三电阻器和第四电阻器，以及电源电压。响应于第一晶体管的集电极电压和第二晶体管的集电极电压而形成第一晶体管的集电极电压和第二晶体管的集电极电压相等的这种输出电压，并被提供给第一晶体管的基极和第二个晶体管是共同的。温度感测电压由第一和第二电阻器的连接点形成。

2. 发明申请

US20070170907A1 Semiconductor integrated circuit 失效
公开(公告)号：US20070170907A1
公开(公告)日：2007-07-26
申请号：US11727559
申请日：2007-03-27
申请人： Takayasu Ito , Mitsuru Hiraki , Masashi Horiguchi , Tadashi Kameyama
发明人： Takayasu Ito , Mitsuru Hiraki , Masashi Horiguchi , Tadashi Kameyama
IPC分类号： G05F3/20
CPC分类号： G05F3/222
摘要： A difference between both emitter voltages of a first transistor having an emitter through which a first current flows, and at least one second transistor having an emitter through which such a second current as to reach a current density thereof smaller than that of the emitter of the first transistor flows, is applied across a first resistor. A second resistor is provided between the emitter of the second transistor and a circuit's ground potential. A third resistor and a fourth resistor are respectively provided between collectors of the first and second transistors and a power supply voltage. Such an output voltage that a collector voltage of the first transistor and a collector voltage of the second transistor become equal is formed in response to the collector voltage of the first transistor and the collector voltage of the second transistor and supplied to bases of the first and second transistors in common. A temperature sense voltage is formed from a connecting point of the first and second resistors.

3. 发明申请

US20060220634A1 Semiconductor integrated circuit 有权
标题翻译：半导体集成电路
公开(公告)号：US20060220634A1
公开(公告)日：2006-10-05
申请号：US11390276
申请日：2006-03-28
申请人： Takayasu Ito , Mitsuru Hiraki , Masashi Horiguchi , Tadashi Kameyama
发明人： Takayasu Ito , Mitsuru Hiraki , Masashi Horiguchi , Tadashi Kameyama
IPC分类号： G05F3/16
CPC分类号： G05F3/222
摘要： A difference between both emitter voltages of a first transistor having an emitter through which a first current flows, and at least one second transistor having an emitter through which such a second current as to reach a current density thereof smaller than that of the emitter of the first transistor flows, is applied across a first resistor. A second resistor is provided between the emitter of the second transistor and a circuit's ground potential. A third resistor and a fourth resistor are respectively provided between collectors of the first and second transistors and a power supply voltage. Such an output voltage that a collector voltage of the first transistor and a collector voltage of the second transistor become equal is formed in response to the collector voltage of the first transistor and the collector voltage of the second transistor and supplied to bases of the first and second transistors in common. A temperature sense voltage is formed from a connecting point of the first and second resistors.
摘要翻译：具有第一电流流经的发射极的第一晶体管的两个发射极电压和至少一个具有发射极的第二晶体管之间的差异，通过该发射极，这样的第二电流达到其电流密度小于第一晶体管流过第一电阻器。第二电阻器设置在第二晶体管的发射极和电路的地电位之间。分别在第一和第二晶体管的集电极之间设置第三电阻器和第四电阻器，以及电源电压。响应于第一晶体管的集电极电压和第二晶体管的集电极电压而形成第一晶体管的集电极电压和第二晶体管的集电极电压相等的这种输出电压，并被提供给第一晶体管的基极和第二个晶体管是共同的。温度感测电压由第一和第二电阻器的连接点形成。

4. 发明授权

US07205755B2 Semiconductor integrated circuit 有权
标题翻译：半导体集成电路
公开(公告)号：US07205755B2
公开(公告)日：2007-04-17
申请号：US11390276
申请日：2006-03-28
申请人： Takayasu Ito , Mitsuru Hiraki , Masashi Horiguchi , Tadashi Kameyama
发明人： Takayasu Ito , Mitsuru Hiraki , Masashi Horiguchi , Tadashi Kameyama
IPC分类号： G05F3/16
CPC分类号： G05F3/222
摘要： A difference between both emitter voltages of a first transistor having an emitter through which a first current flows, and at least one second transistor having an emitter through which such a second current as to reach a current density thereof smaller than that of the emitter of the first transistor flows, is applied across a first resistor. A second resistor is provided between the emitter of the second transistor and a circuit's ground potential. A third resistor and a fourth resistor are respectively provided between collectors of the first and second transistors and a power supply voltage. Such an output voltage that a collector voltage of the first transistor and a collector voltage of the second transistor become equal is formed in response to the collector voltage of the first transistor and the collector voltage of the second transistor and supplied to bases of the first and second transistors in common. A temperature sense voltage is formed from a connecting point of the first and second resistors.
摘要翻译：具有第一电流流经的发射极的第一晶体管的两个发射极电压和至少一个具有发射极的第二晶体管之间的差异，通过该发射极，这样的第二电流达到其电流密度小于第一晶体管流过第一电阻器。第二电阻器设置在第二晶体管的发射极和电路的地电位之间。分别在第一和第二晶体管的集电极之间设置第三电阻器和第四电阻器，以及电源电压。响应于第一晶体管的集电极电压和第二晶体管的集电极电压而形成第一晶体管的集电极电压和第二晶体管的集电极电压相等的这种输出电压，并被提供给第一晶体管的基极和第二个晶体管是共同的。温度感测电压由第一和第二电阻器的连接点形成。

5. 发明授权

US08073643B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08073643B2
公开(公告)日：2011-12-06
申请号：US12122715
申请日：2008-05-18
申请人： Takayasu Ito , Mitsuru Hiraki , Masashi Horiguchi , Toyohiro Shimogawa
发明人： Takayasu Ito , Mitsuru Hiraki , Masashi Horiguchi , Toyohiro Shimogawa
IPC分类号： G01R21/00
CPC分类号： G06F1/3203 , G06F1/3287 , Y02D10/171
摘要： A semiconductor device which includes a power switch connecting an internal power supply in which power is not shut down and an internal power supply in which power is shut down, and an internal voltage determining circuit for determining the voltage of the internal power supply in which power is shut down. When the power of the internal power supply is interrupted, the power switch is turned off, the regulator circuit is turned off, and an output of the regulator circuit is shorted to a ground potential. When the power of the internal power supply is resumed, the regulator circuit is turned on, shorting is cancelled, the increased voltage of the internal power supply is determined by the internal voltage determining circuit, operation of a circuit block is started, and the switch is turned on.
摘要翻译：一种半导体装置，包括连接未关闭电源的内部电源的电源开关和关闭电力的内部电源;以及内部电压确定电路，其用于确定内部电源的电压，其中，被关闭当内部电源的电源中断时，电源开关关闭，调节器电路关闭，调节器电路的输出短路到地电位。当恢复内部电源的电源时，调节器电路接通，短路被取消，内部电源的增加的电压由内部电压确定电路确定，电路块的操作开始，开关打开

6. 发明申请

US20060235630A1 Semicondustor device 失效
标题翻译：半导体器件
公开(公告)号：US20060235630A1
公开(公告)日：2006-10-19
申请号：US11401977
申请日：2006-04-12
申请人： Takayasu Ito , Mitsuru Hiraki , Masashi Horiguchi , Toyohiro Shimogawa
发明人： Takayasu Ito , Mitsuru Hiraki , Masashi Horiguchi , Toyohiro Shimogawa
IPC分类号： G06F19/00
CPC分类号： G06F1/3203 , G06F1/3287 , Y02D10/171
摘要： The present invention provides a semiconductor device capable of realizing power saving and improvement in reliability or reduction in area. A semiconductor device includes: a power switch connecting an internal power supply in which power is not shut down and an internal power supply in which power is shut down; and an internal voltage determining circuit for determining voltage of the internal power supply in which power is shut down. Voltage of the internal power supply in which power is shut down is generated from voltage of an external power supply by using a regulator circuit. When the power of the internal power supply is interrupted, the power switch is turned off, the regulator circuit is turned off, and an output of the regulator circuit is shorted to a ground potential. When the power of the internal power supply is resumed, the regulator circuit is turned on, shorting is cancelled, the increased voltage of the internal power supply is determined by the internal voltage determining circuit, operation of a circuit block is started, and the switch is turned on.
摘要翻译：本发明提供一种半导体装置，其能够实现节电，提高可靠性或减小面积。一种半导体装置，包括：连接不断电的内部电源的电源开关和断电的内部电源; 以及用于确定电源关闭的内部电源的电压的内部电压确定电路。通过使用调节电路从外部电源的电压产生关闭电源的内部电源的电压。当内部电源的电源中断时，电源开关关闭，调节器电路关闭，调节器电路的输出短路到地电位。当恢复内部电源的电源时，调节器电路接通，短路被取消，内部电源的增加的电压由内部电压确定电路确定，电路块的操作开始，开关打开

7. 发明申请

US20080228414A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080228414A1
公开(公告)日：2008-09-18
申请号：US12122715
申请日：2008-05-18
申请人： Takayasu ITO , Mitsuru Hiraki , Masashi Horiguchi , Toyohiro Shimogawa
发明人： Takayasu ITO , Mitsuru Hiraki , Masashi Horiguchi , Toyohiro Shimogawa
IPC分类号： G06F19/00
CPC分类号： G06F1/3203 , G06F1/3287 , Y02D10/171
摘要： The present invention provides a semiconductor device capable of realizing power saving and improvement in reliability or reduction in area. A semiconductor device includes: a power switch connecting an internal power supply in which power is not shut down and an internal power supply in which power is shut down; and an internal voltage determining circuit for determining voltage of the internal power supply in which power is shut down. Voltage of the internal power supply in which power is shut down is generated from voltage of an external power supply by using a regulator circuit. When the power of the internal power supply is interrupted, the power switch is turned off, the regulator circuit is turned off, and an output of the regulator circuit is shorted to a ground potential. When the power of the internal power supply is resumed, the regulator circuit is turned on, shorting is cancelled, the increased voltage of the internal power supply is determined by the internal voltage determining circuit, operation of a circuit block is started, and the switch is turned on.
摘要翻译：本发明提供一种半导体装置，其能够实现节电，提高可靠性或减小面积。一种半导体装置，包括：连接不断电的内部电源的电源开关和断电的内部电源; 以及用于确定电源关闭的内部电源的电压的内部电压确定电路。通过使用调节电路从外部电源的电压产生关闭电源的内部电源的电压。当内部电源的电源中断时，电源开关关闭，调节器电路关闭，调节器电路的输出短路到地电位。当恢复内部电源的电源时，调节器电路接通，短路被取消，内部电源的增加的电压由内部电压确定电路确定，电路块的操作开始，开关打开

8. 发明授权

US07383138B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07383138B2
公开(公告)日：2008-06-03
申请号：US11401977
申请日：2006-04-12
申请人： Takayasu Ito , Mitsuru Hiraki , Masashi Horiguchi , Toyohiro Shimogawa
发明人： Takayasu Ito , Mitsuru Hiraki , Masashi Horiguchi , Toyohiro Shimogawa
IPC分类号： G01R21/00
CPC分类号： G06F1/3203 , G06F1/3287 , Y02D10/171
摘要： A semiconductor device includes: a power switch connecting an internal power supply in which power is not shut down and an internal power supply in which power is shut down; and an internal voltage determining circuit for determining voltage of the internal power supply in which power is shut down. Voltage of the internal power supply in which power is shut down is generated from external power supply voltage by using a regulator circuit. When the power of the internal power supply is interrupted, the power switch is turned off, the regulator circuit is turned off, and an output of the regulator circuit is shorted to a ground potential. When power of the internal power supply is resumed, the regulator circuit is turned on, shorting is cancelled, increased voltage of the internal power supply is determined, operation of a circuit block is started, and the switch is turned on.
摘要翻译：一种半导体装置，包括：连接不断电的内部电源的电源开关和断电的内部电源; 以及用于确定电源关闭的内部电源的电压的内部电压确定电路。通过使用调节器电路从外部电源电压产生关闭电源的内部电源的电压。当内部电源的电源中断时，电源开关关闭，调节器电路关闭，调节器电路的输出短路到地电位。当内部电源的电源恢复时，调节器电路接通，短路被取消，内部电源的电压升高，电路块的运行开始，开关导通。

9. 发明申请

US20140015504A1 VOLTAGE GENERATING CIRCUIT 有权
标题翻译：电压发生电路
公开(公告)号：US20140015504A1
公开(公告)日：2014-01-16
申请号：US14009715
申请日：2012-04-09
申请人： Shinya Sano , Masashi Horiguchi , Takahiro Miki , Mitsuru Hiraki
发明人： Shinya Sano , Masashi Horiguchi , Takahiro Miki , Mitsuru Hiraki
IPC分类号： H02M3/158
CPC分类号： G05F3/267 , G05F3/20 , G05F3/26 , G05F3/30 , H02M3/158
摘要： A voltage generating circuit, in which the influence of offset of an amplifier on an output voltage is reduced, has first and second bipolar transistors (Q1, Q2) having emitter terminals at the same electric potential. A base terminal of Q1 is disposed on a collector side of Q2. A first resistance element connects the collector side of Q2 with the base side of Q2; and a second resistance element (R1) connects a collector side of Q1 to R2. A third resistance element (R3) connects a base terminal of Q2 with the electric potential of the emitter terminals. An amplifier (A1) outputs a voltage based on a voltage difference between the collector sides of Q1 and Q2; and a voltage-current converting section (MP1, MP2) converts amplifier output into a current supplied to the connection node of R1 and R2. A voltage is then output on the basis of the generated current.
摘要翻译：其中放大器的偏移对输出电压的影响减小的电压产生电路具有在相同电位的发射极端子的第一和第二双极晶体管（Q1，Q2）。 Q1的基极端子设置在Q2的集电极侧。第一电阻元件将Q2的集电极侧与Q2的基极侧连接; 并且第二电阻元件（R1）将Q1的集电极侧连接到R2。第三电阻元件（R3）将Q2的基极端子与发射极端子的电位相连。放大器（A1）输出基于Q1和Q2的集电极侧之间的电压差的电压; 电压电流转换部（MP1，MP2）将放大器输出转换为R1和R2的连接节点的电流。然后基于所产生的电流输出电压。

10. 发明授权

US08085566B2 Semiconductor circuit device and data processing system 有权
公开(公告)号：US08085566B2
公开(公告)日：2011-12-27
申请号：US12926516
申请日：2010-11-23
申请人： Masashi Horiguchi , Mitsuru Hiraki
发明人： Masashi Horiguchi , Mitsuru Hiraki
IPC分类号： H02M1/00 , H02M3/06 , G05F1/40
CPC分类号： G05F3/242 , H01L2224/16145 , H01L2224/32245 , H01L2224/48137 , H01L2224/4826 , H01L2224/73215 , Y10T307/76 , H01L2924/00
摘要： Occurrence of power supply noise arising in connection with a step-down action at the time of turning on power supply is to be restrained. A step-down unit is provided with a switched capacitor type step-down circuit and a series regulator type step-down circuit, and stepped-down voltage output terminals of the step-down circuits are connected in common. The common connection of the stepped-down voltage output terminals of both step-down circuits makes possible parallel driving of both, selective driving of either or consecutive driving of the two. In the consecutive driving, even if the switched capacitor type step-down circuit is driven after driving the series regulator type step-down circuit first to supply a stepped-down voltage to loads, the switched capacitor type step-down circuit will need only to be compensated for a discharge due to the loads, and a peak of a charge current for capacitors can be kept low. When operation of the switched capacitor type step-down circuit is started, no large rush current arises, and occurrence of noise is restrained.

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