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1. 发明申请

US20060181213A1 Flat display device 有权
公开(公告)号：US20060181213A1
公开(公告)日：2006-08-17
申请号：US11404023
申请日：2006-04-14
申请人： Takatoshi Hirota , Hideo Kimura , Kazuo Imaoka , Satoshi Yokoyama , Mitsuharu Sato , Shiro Naoi , Takaaki Onoe
发明人： Takatoshi Hirota , Hideo Kimura , Kazuo Imaoka , Satoshi Yokoyama , Mitsuharu Sato , Shiro Naoi , Takaaki Onoe
IPC分类号： H01J17/49
CPC分类号： H01J29/868 , H01J5/16 , H01J29/898 , H01J2211/442 , H01J2329/89
摘要： In a flat display device having a pair of substrates for defining a gas discharge space in which a gas used to generate discharge luminance is sealed, means for absorbing or reflecting near infrared rays is included.

2. 发明授权

US07088042B2 Flat display device 有权
公开(公告)号：US07088042B2
公开(公告)日：2006-08-08
申请号：US10674476
申请日：2003-10-01
申请人： Takatoshi Hirota , Hideo Kimura , Kazuo Imaoka , Satoshi Yokoyama , Mitsuharu Sato , Shiro Naoi , Takaaki Onoe
发明人： Takatoshi Hirota , Hideo Kimura , Kazuo Imaoka , Satoshi Yokoyama , Mitsuharu Sato , Shiro Naoi , Takaaki Onoe
IPC分类号： H01J17/49
CPC分类号： H01J11/12 , H01J5/16 , H01J11/44 , H01J29/88 , H01J2211/44 , H01J2211/448
摘要： In a flat display device having a pair of substrates for defining a gas discharge space in which a gas used to generate discharge luminance is sealed, means for absorbing or reflecting near infrared rays is included.

3. 发明授权

US07196471B2 Flat display device 有权
标题翻译：平板显示设备
公开(公告)号：US07196471B2
公开(公告)日：2007-03-27
申请号：US11404023
申请日：2006-04-14
申请人： Takatoshi Hirota , Hideo Kimura , Kazuo Imaoka , Satoshi Yokoyama , Mitsuharu Sato , Shiro Naoi , Takaaki Onoe
发明人： Takatoshi Hirota , Hideo Kimura , Kazuo Imaoka , Satoshi Yokoyama , Mitsuharu Sato , Shiro Naoi , Takaaki Onoe
IPC分类号： H01J17/49
CPC分类号： H01J29/868 , H01J5/16 , H01J29/898 , H01J2211/442 , H01J2329/89
摘要： In a flat display device having a pair of substrates for defining a gas discharge space in which a gas used to generate discharge luminance is sealed, means for absorbing or reflecting near infrared rays is included.
摘要翻译：在具有用于限定用于产生放电亮度的气体的气体放电空间的一对基板的平板显示装置中，包括用于吸收或反射近红外线的装置。

4. 发明授权

US06630789B2 Flat display device 失效
标题翻译：平板显示设备
公开(公告)号：US06630789B2
公开(公告)日：2003-10-07
申请号：US09819983
申请日：2001-03-29
申请人： Takatoshi Hirota , Hideo Kimura , Kazuo Imaoka , Satoshi Yokoyama , Mitsuharu Sato , Shiro Naoi , Takaaki Onoe
发明人： Takatoshi Hirota , Hideo Kimura , Kazuo Imaoka , Satoshi Yokoyama , Mitsuharu Sato , Shiro Naoi , Takaaki Onoe
IPC分类号： H01J1749
CPC分类号： H01J11/12 , H01J5/16 , H01J11/44 , H01J29/88 , H01J2211/44 , H01J2211/448
摘要： In a flat display device having a pair of substrates for defining a gas discharge space in which a gas used to generate discharge luminance is sealed, means for absorbing or reflecting near infrared rays is included.
摘要翻译：在具有用于限定用于产生放电亮度的气体的气体放电空间的一对基板的平板显示装置中，包括用于吸收或反射近红外线的装置。

5. 发明授权

US07339319B2 Flat display device 失效
标题翻译：平板显示设备
公开(公告)号：US07339319B2
公开(公告)日：2008-03-04
申请号：US11670853
申请日：2007-02-02
申请人： Takatoshi Hirota , Hideo Kimura , Kazuo Imaoka , Satoshi Yokoyama , Mitsuharu Sato , Shiro Naoi , Takaaki Onoe
发明人： Takatoshi Hirota , Hideo Kimura , Kazuo Imaoka , Satoshi Yokoyama , Mitsuharu Sato , Shiro Naoi , Takaaki Onoe
IPC分类号： H01J17/49
CPC分类号： H01J29/868 , H01J5/16 , H01J29/898 , H01J2211/442 , H01J2329/89
摘要： In a flat display device having a pair of substrates for defining a gas discharge space in which a gas used to generate discharge luminance is sealed, means for absorbing or reflecting near infrared rays is included.
摘要翻译：在具有用于限定用于产生放电亮度的气体的气体放电空间的一对基板的平板显示装置中，包括用于吸收或反射近红外线的装置。

6. 发明授权

US06297582B1 Flat display device 失效
标题翻译：平板显示设备
公开(公告)号：US06297582B1
公开(公告)日：2001-10-02
申请号：US08867846
申请日：1997-06-03
申请人： Takatoshi Hirota , Hideo Kimura , Kazuo Imaoka , Satoshi Yokoyama , Mitsuharu Sato , Shiro Naoi , Takaaki Onoe
发明人： Takatoshi Hirota , Hideo Kimura , Kazuo Imaoka , Satoshi Yokoyama , Mitsuharu Sato , Shiro Naoi , Takaaki Onoe
IPC分类号： H01J1500
CPC分类号： H01J11/12 , H01J5/16 , H01J11/44 , H01J29/88 , H01J2211/44 , H01J2211/448
摘要： In a flat display device having a pair of substrates for defining a gas discharge space in which a gas used to generate discharge luminance is sealed, means for absorbing or reflecting near infrared rays is included.
摘要翻译：在具有用于限定用于产生放电亮度的气体的气体放电空间的一对基板的平板显示装置中，包括用于吸收或反射近红外线的装置。

7. 发明申请

US20060152127A1 Display filter 审中-公开
标题翻译：显示过滤器
公开(公告)号：US20060152127A1
公开(公告)日：2006-07-13
申请号：US11237667
申请日：2005-09-29
申请人： Yoshimi Kawanami , Takatoshi Hirota , Nobuyuki Hori
发明人： Yoshimi Kawanami , Takatoshi Hirota , Nobuyuki Hori
IPC分类号： H01J5/16
CPC分类号： H01J11/10 , G02B5/204 , G02B5/208 , G02B5/223 , G02B5/281 , H01J11/44 , H01J2211/446 , H05K9/0096
摘要： A display filter is provided that can realize price reduction without lowering electromagnetic wave shielding ability and near infrared rays shielding ability. A conductive mesh is used for shielding electromagnetic waves. A multilayered film and a coloring layer are used for shielding near infrared rays. The multilayered film reflects near infrared rays selectively and the coloring layer absorbs near infrared rays selectively. The use of the multilayered film significantly reduces near infrared rays absorption ability that is required for the coloring layer compared to the case where no multilayered film is used.
摘要翻译：提供了一种可以实现价格降低而不降低电磁波屏蔽能力和近红外线屏蔽能力的显示滤光片。导电网用于屏蔽电磁波。多层膜和着色层用于屏蔽近红外线。多层膜选择性地反射近红外线，着色层选择性地吸收近红外线。与不使用多层膜的情况相比，使用多层膜显着降低着色层所需的近红外线吸收能力。

8. 发明授权

US5578166A Method of reactive ion etching of a thin copper film 失效
标题翻译：薄铜膜的反应离子蚀刻方法
公开(公告)号：US5578166A
公开(公告)日：1996-11-26
申请号：US449340
申请日：1995-05-24
申请人： Takatoshi Hirota
发明人： Takatoshi Hirota
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/3213 , H01L23/52 , H01L21/28
CPC分类号： H01L21/32136
摘要： The method to etch an electrically conductive film comprises the steps of: forming a metal conductor film comprising copper or copper alloy, upon a substrate; and forming a mask pattern upon the metal conductor film; and etching an exposed part of the metal conductor film by the use of the mask pattern and a reactive ion-etching (RIE) employing a plasma of a gas mixture comprising a silicon tetra-chloride (SiCl.sub.4) gas, a nitrogen (N.sub.2) gas and a carbon compound gas, so that the exposed part of the metal conductor film is removed so as to leave the masked part. The metal conductor film may further comprise a diffusion protection layer formed of a refractory metal or its alloy upon and/or underneath the copper/mainly-copper layer. The mask pattern may be typically formed of silicon dioxide (SiO.sub.2). The substrate may further comprise an insulating layer thereon, typically formed of silicon dioxide (SiO.sub.2), for contacting said metal conductor film. The carbon compound gas may typically be a carbon tetra-chloride (CCl.sub.4), methane (CH.sub.4), ethane (C.sub.2 H.sub.6) or propane (C.sub.3 H.sub.8) and so on. When SiCl.sub.4 is employed the content may typically be 6.6 to 15% by volume in the gas mixture. When methane (CH.sub.4) gas is employed the content may typically be 8 to 18% by volume in the gas mixture. The etching step may preferably performed at a substrate temperature higher than 250.degree. C.
摘要翻译：蚀刻导电膜的方法包括以下步骤：在基底上形成包含铜或铜合金的金属导体膜; 并在所述金属导体膜上形成掩模图案; 以及通过使用掩模图案和使用包含四氯化硅（SiCl 4），氮（N 2）气体的气体混合物的等离子体的反应离子蚀刻（RIE）来蚀刻金属导体膜的暴露部分和碳化合物气体，从而去除金属导体膜的暴露部分，以便离开掩模部分。金属导体膜还可以包括由铜/主要铜层上和/或之下的难熔金属或其合金形成的扩散保护层。掩模图案通常可以由二氧化硅（SiO 2）形成。衬底还可包括其上通常由二氧化硅（SiO 2）形成的绝缘层，用于接触所述金属导体膜。碳化合物气体通常可以是四氯化碳（CCl4），甲烷（CH4），乙烷（C2H6）或丙烷（C3H8）等。当使用SiCl 4时，气体混合物中的含量通常可以为6.6至15体积％。当使用甲烷（CH 4）气体时，气体混合物中的含量通常可以为8至18体积％。蚀刻步骤可优选在高于250℃的衬底温度下进行。

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