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1. 发明申请

US20110176370A1 NONVOLATILE SEMICONDUCTOR MEMORY 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US20110176370A1
公开(公告)日：2011-07-21
申请号：US12885796
申请日：2010-09-20
申请人： Takatomi IZUMI , Jin Kashiwagi
发明人： Takatomi IZUMI , Jin Kashiwagi
IPC分类号： G11C16/30
CPC分类号： G11C16/08 , G11C16/30
摘要： A nonvolatile semiconductor memory comprises a memory cell array in which a plurality of memory cell transistors capable of storing data according to a threshold voltage; a row decoder having a plurality of transfer MOS transistors connected at first ends to a plurality of word lines which are respectively connected to control gate electrodes of the plurality of memory cell transistors; and a word line driver which selects supplied voltages and supplies the selected voltages to second ends of the plurality of transfer MOS transistors. The nonvolatile semiconductor memory further comprises a voltage generation circuit which supplies voltages to the word line driver; and a control circuit which controls operation of the row decoder, the word line driver and the voltage generation circuit.
摘要翻译：非易失性半导体存储器包括存储单元阵列，其中能够根据阈值电压存储数据的多个存储单元晶体管; 行解码器，其具有在第一端连接到分别连接到所述多个存储单元晶体管的控制栅电极的多个字线的多个传输MOS晶体管; 以及字线驱动器，其选择提供的电压并将所选择的电压提供给多个传输MOS晶体管的第二端。非易失性半导体存储器还包括向字线驱动器提供电压的电压产生电路; 以及控制行解码器，字线驱动器和电压产生电路的操作的控制电路。

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