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    • 3. 发明申请
    • PROGRAM FOR GAME APPARATUS, GAME APPARATUS, AND RECORDING MEDIUM STORING PROGRAM FOR GAME APPARATUS
    • 游戏装置程序,游戏装置和记录游戏装置的中档存储程序
    • US20080303790A1
    • 2008-12-11
    • US12044669
    • 2008-03-07
    • Kenjiro MORIMOTOTakashi Yuda
    • Kenjiro MORIMOTOTakashi Yuda
    • G09G5/08
    • A63F13/577A63F13/10A63F13/573A63F13/803A63F13/807A63F2300/64A63F2300/646A63F2300/8017A63F2300/8041
    • An object is to provide a program for a game apparatus for making a plurality of moving objects including a moving object operated by a player to compete in virtual space against each other, in which players are capable of fully using the stage effects specific to a virtual game to enjoy a heated racing game even when they vary in skill. In a program for a game apparatus comprising moving-object operating means, image-information generating means, and image-information outputting means, the program causes a computer to perform a step of producing land-configuration information, a step of monitoring movement information regarding a plurality of moving objects, a step of producing a special area object when results of monitoring meet predetermined requirements, a step of displaying the special area object in such a manner as to be viewable for the player, and a step of allowing another moving object to ride therein.
    • 本发明的目的是提供一种游戏装置的程序,用于制造包括由玩家操作的运动对象的多个移动对象的游戏装置,以相互竞争虚拟空间,其中玩家能够充分利用特定于虚拟的舞台效果 游戏即使在技能不一样的时候也可以享受加热的赛车游戏。 在包括移动物体操作装置,图像信息产生装置和图像信息输出装置的游戏装置的程序中,程序使计算机执行产生陆地配置信息的步骤,监视关于 多个移动物体,当监视结果满足预定要求时产生特殊区域物体的步骤,以特定区域物体显示为使玩家能够观看的步骤,以及允许另一移动物体 骑在里面
    • 5. 发明申请
    • Semiconductor device and Manufacturing method thereof
    • 半导体装置及其制造方法
    • US20070228483A1
    • 2007-10-04
    • US11693408
    • 2007-03-29
    • Takashi Yuda
    • Takashi Yuda
    • H01L29/94
    • H01L29/7923H01L21/28282H01L27/115H01L27/11568H01L29/4234
    • The present invention provides a semiconductor device which includes a gate electrode shaped in the form of an approximately quadrangular prism, including a laminated body of a gate oxide layer, a gate polysilicon layer and a gate silicon nitride layer provided in a first conduction type substrate, a second conduction type implantation region provided in a region outside the gate electrode, a sidewall that exposes a top face of the gate electrode and is formed by laminating a sidewall mask oxide layer covering side surfaces, an electron storage nitride layer and a sidewall silicon oxide layer, and a source/drain diffusion layer provided in the first conduction type substrate exposed from the gate electrode and the sidewall.
    • 本发明提供了一种半导体器件,其包括形成为大致四棱镜形式的栅电极,其包括设置在第一导电型衬底中的栅极氧化物层的层叠体,栅极多晶硅层和栅极氮化硅层, 设置在栅电极外的区域中的第二导电型注入区,暴露栅电极顶面的侧壁,并且通过层叠覆盖侧面的侧壁掩模氧化物层,电子存储氮化物层和侧壁氧化硅 层,以及设置在从栅电极和侧壁露出的第一导电型基板中的源极/漏极扩散层。
    • 8. 发明申请
    • SEMICONDUCTOR NON-VOLATILE MEMORY, CHARGE ACCUMULATING METHOD FOR SEMICONDUCTOR NON-VOLATILE MEMORY, CHARGE ACCUMULATING PROGRAM STORAGE MEDIUM
    • 半导体非易失性存储器的充电累积方法,充电累积程序存储介质的半导体非易失性存储器
    • US20100238734A1
    • 2010-09-23
    • US12724666
    • 2010-03-16
    • Takashi Yuda
    • Takashi Yuda
    • G11C16/04
    • G11C16/3404G11C11/5621
    • There is provided a semiconductor non-volatile memory including: plural memory sections, a voltage application section, and a control section that controls the voltage application section wherein the control section controlling voltage application such that, based on a value of current detected by a current detection section, in a region where the current flowing in a channel region is greater than a predetermined target value at which a amount of charge accumulated has become a specific value in at least one of a first charge accumulating section or a second charge accumulating section, when a value of current flowing in the channel region approaches a target value, a rate of increase in the charge accumulating amount per time is decreased at least once.
    • 提供了一种半导体非易失性存储器,包括:多个存储器部分,电压施加部分和控制部分,其控制电压施加部分,其中控制部分控制电压施加使得基于由电流检测到的电流值 检测部,在流过所述沟道区域的电流大于在第一电荷累积部或第二电荷累积部中的至少一个中累积的电荷量成为特定值的规定目标值的区域中, 当在通道区域中流动的电流值接近目标值时,每时间的电荷累积量的增加率至少减少一次。
    • 10. 发明授权
    • Non-volatile semiconductor memory device, drive method and manufacturing method
    • 非易失性半导体存储器件,驱动方法及制造方法
    • US07531866B2
    • 2009-05-12
    • US11294442
    • 2005-12-06
    • Takashi Yuda
    • Takashi Yuda
    • H01L29/792
    • G11C16/0475H01L21/28282H01L27/115H01L27/11568H01L29/66833H01L29/7923
    • A MONOS type non-volatile semiconductor memory device has a memory cell array. The memory cell array includes a plurality of pairs of bit line and control line. These bit line-control line pairs are parallel to the channel on the substrate. The memory cell array also includes a plurality of memory cells. Each memory cell has a two-transistor configuration. A certain number of memory cells are disposed between the bit line and control line of each pair. These memory cells are connected in series, and connected with the bit line and control line alternately. The first gate electrode and second gate electrode in the memory cell are formed in strips in a direction perpendicular to the channel.
    • MONOS型非易失性半导体存储器件具有存储单元阵列。 存储单元阵列包括多对位线和控制线。 这些位线控制线对与衬底上的通道平行。 存储单元阵列还包括多个存储单元。 每个存储单元具有双晶体管配置。 在每对的位线和控制线之间设置一定数量的存储单元。 这些存储单元串联连接,并与位线和控制线交替连接。 存储单元中的第一栅极电极和第二栅电极在垂直于沟道的方向上形成带状。