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1. 发明授权

US07854049B2 Method of manufacturing a piezoelectric thin film device 有权
标题翻译：制造压电薄膜器件的方法
公开(公告)号：US07854049B2
公开(公告)日：2010-12-21
申请号：US11675677
申请日：2007-02-16
申请人： Takashi Yoshino , Shoichiro Yamaguchi , Yuichi Iwata , Akira Hamajima , Kengo Suzuki
发明人： Takashi Yoshino , Shoichiro Yamaguchi , Yuichi Iwata , Akira Hamajima , Kengo Suzuki
IPC分类号： H04R17/10
CPC分类号： H03H3/02 , H03H9/02023 , H03H9/02031 , H03H9/02039 , H03H9/02055 , H03H9/02133 , H03H9/173 , H03H9/564 , H03H9/568 , H03H2003/021 , Y10T29/42 , Y10T29/435 , Y10T29/49005
摘要： In a piezoelectric thin film device of the present invention, the degree of flexibility is enhanced in selection of a piezoelectric material constituting a piezoelectric thin film and the crystal orientation in the piezoelectric thin film. A piezoelectric thin film filter, including four film bulk acoustic resonators, has a configuration where a filter section for providing a filter function of the piezoelectric thin film filter is bonded with a flat base substrate mechanically supporting the filter section via an adhesive layer. In manufacturing of the piezoelectric thin film filter, a piezoelectric thin film is obtained by performing removal processing on a piezoelectric substrate, but the piezoelectric thin film obtained by removal processing cannot independently stand up under its own weight. For this reason, a prescribed member including the piezoelectric substrate is previously bonded to the base substrate as a support prior to the removal processing.
摘要翻译：在本发明的压电薄膜器件中，在构成压电薄膜的压电材料和压电薄膜中的晶体取向的选择方面，柔性程度提高。包括四个膜体声波谐振器的压电薄膜滤波器具有其中用于提供压电薄膜滤波器的滤波器功能的滤波器部分通过经由粘合剂层机械地支撑滤波器部分的平坦基底基板结合的构造。在压电薄膜滤波器的制造中，通过对压电基板进行去除处理，获得了压电薄膜，但是通过去除处理获得的压电薄膜不能独立地在其自重下立起。因此，在去除处理之前，预先将包括压电基板的规定构件作为支撑体接合到基底基板。

2. 发明申请

US20070200459A1 PIEZOELECTRIC THIN FILM DEVICE 审中-公开
标题翻译：压电薄膜器件
公开(公告)号：US20070200459A1
公开(公告)日：2007-08-30
申请号：US11675682
申请日：2007-02-16
申请人： Takashi Yoshino , Shoichiro Yamaguchi , Yuichi Iwata , Akira Hamajima , Kengo Suzuki
发明人： Takashi Yoshino , Shoichiro Yamaguchi , Yuichi Iwata , Akira Hamajima , Kengo Suzuki
IPC分类号： H01L41/08
CPC分类号： H03H3/02 , H03H9/02023 , H03H9/02031 , H03H9/02039 , H03H9/02055 , H03H9/02133 , H03H9/173 , H03H9/564 , H03H2003/021
摘要： The present invention is directed to preventing characteristic variations and damage caused by a difference in thermal expansion coefficient. A piezoelectric thin film filter, including four film bulk acoustic resonators, has a configuration where a filter section for providing a filter function of the piezoelectric thin film filter is bonded with a flat base substrate mechanically supporting the filter section via an adhesive layer. In manufacturing of the piezoelectric thin film filter, a piezoelectric thin film is obtained by performing removal processing on a piezoelectric substrate that can individually stand up under its own weight, but substrates made of one kind of single crystal material are adopted as the base substrate and the piezoelectric substrate, to make the respective thermal expansion coefficients of the piezoelectric thin film and the base substrate coincident with each other.
摘要翻译：本发明旨在防止由热膨胀系数差引起的特性变化和损坏。包括四个膜体声波谐振器的压电薄膜滤波器具有其中用于提供压电薄膜滤波器的滤波器功能的滤波器部分通过经由粘合剂层机械地支撑滤波器部分的平坦基底基板结合的构造。在压电薄膜滤波器的制造中，通过在能够单独自重地承受其自重的压电基板上进行去除处理而获得压电薄膜，但采用由一种单晶材料制成的基板作为基底，压电基板，以使压电薄膜和基底基板的各自的热膨胀系数相互一致。

3. 发明申请

US20070200458A1 PIEZOELECTRIC THIN FILM DEVICE 审中-公开
标题翻译：压电薄膜器件
公开(公告)号：US20070200458A1
公开(公告)日：2007-08-30
申请号：US11675671
申请日：2007-02-16
申请人： Takashi Yoshino , Shoichiro Yamaguchi , Yuichi Iwata , Akira Hamajima , Kengo Suzuki
发明人： Takashi Yoshino , Shoichiro Yamaguchi , Yuichi Iwata , Akira Hamajima , Kengo Suzuki
IPC分类号： H01L41/08
CPC分类号： H03H3/02 , H03H9/02023 , H03H9/02031 , H03H9/02039 , H03H9/02055 , H03H9/02133 , H03H9/173 , H03H9/564 , H03H2003/021
摘要： The present invention is directed to improving characteristics of a piezoelectric thin film device. A piezoelectric thin film filter including four film bulk acoustic resonators has a configuration where a filter section and a base substrate are bonded to each other via an adhesive layer, the filter section including a piezoelectric thin film which cannot stand up individually under its own weight, the flat base substrate mechanically supporting the filter section. As a piezoelectric material constructing the piezoelectric thin film, it is desirable to use a single-crystal material including no grain boundary, selected from crystal, lithium niobate, lithium tantalite, lithium tetraborate, zinc oxide, potassium niobate, and langasite.
摘要翻译：本发明旨在改善压电薄膜器件的特性。包括四个膜体声波谐振器的压电薄膜滤波器具有滤波器部分和基底基板经由粘合剂层彼此接合的构造，该滤波器部分包括不能在其自重下单独承受的压电薄膜，平底基底机械地支撑过滤器部分。作为构成压电薄膜的压电材料，优选使用选自晶体，铌酸锂，钽酸锂，四硼酸锂，氧化锌，铌酸钾，镧系元素等不含晶界的单晶材料。

4. 发明申请

US20070199186A1 PIEZOELECTRIC THIN FILM DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：压电薄膜装置及其制造方法
公开(公告)号：US20070199186A1
公开(公告)日：2007-08-30
申请号：US11675677
申请日：2007-02-16
申请人： Takashi Yoshino , Shoichiro Yamaguchi , Yuichi Iwata , Akira Hamajima , Kengo Suzuki
发明人： Takashi Yoshino , Shoichiro Yamaguchi , Yuichi Iwata , Akira Hamajima , Kengo Suzuki
IPC分类号： H04R17/00
CPC分类号： H03H3/02 , H03H9/02023 , H03H9/02031 , H03H9/02039 , H03H9/02055 , H03H9/02133 , H03H9/173 , H03H9/564 , H03H9/568 , H03H2003/021 , Y10T29/42 , Y10T29/435 , Y10T29/49005
摘要： In a piezoelectric thin film device of the present invention, the degree of flexibility is enhanced in selection of a piezoelectric material constituting a piezoelectric thin film and the crystal orientation in the piezoelectric thin film. A piezoelectric thin film filter, including four film bulk acoustic resonators, has a configuration where a filter section for providing a filter function of the piezoelectric thin film filter is bonded with a flat base substrate mechanically supporting the filter section via an adhesive layer. In manufacturing of the piezoelectric thin film filter, a piezoelectric thin film is obtained by performing removal processing on a piezoelectric substrate, but the piezoelectric thin film obtained by removal processing cannot independently stand up under its own weight. For this reason, a prescribed member including the piezoelectric substrate is previously bonded to the base substrate as a support prior to the removal processing.
摘要翻译：在本发明的压电薄膜器件中，在构成压电薄膜的压电材料和压电薄膜中的晶体取向的选择方面，柔性程度提高。包括四个膜体声波谐振器的压电薄膜滤波器具有其中用于提供压电薄膜滤波器的滤波器功能的滤波器部分通过经由粘合剂层机械地支撑滤波器部分的平坦基底基板结合的构造。在压电薄膜滤波器的制造中，通过对压电基板进行去除处理，获得了压电薄膜，但是通过去除处理获得的压电薄膜不能独立地在其自重下立起。因此，在去除处理之前，预先将包括压电基板的规定构件作为支撑体接合到基底基板。

5. 发明授权

US08002998B2 Method of producing a slab type two-dimensional photonic crystal structure 失效
标题翻译：板状二维光子晶体结构的制造方法
公开(公告)号：US08002998B2
公开(公告)日：2011-08-23
申请号：US11842277
申请日：2007-08-21
申请人： Yuichi Iwata , Osamu Mitomi , Jungo Kondo , Kenji Aoki , Takashi Yoshino , Akira Hamajima
发明人： Yuichi Iwata , Osamu Mitomi , Jungo Kondo , Kenji Aoki , Takashi Yoshino , Akira Hamajima
IPC分类号： B29D11/00
CPC分类号： G02B6/1225 , B82Y20/00 , G02B6/12
摘要： A first main face of a substrate of a dielectric single crystal is etched to form recesses in the substrate. A second main face of the substrate is mechanically processed to form a slab, so that the recesses pass through the substrate to form through holes.
摘要翻译：蚀刻电介质单晶的衬底的第一主面以在衬底中形成凹陷。基板的第二主面被机械加工以形成板坯，使得凹槽穿过基板以形成通孔。

6. 发明申请

US20070092979A1 production method for polarization inversion unit 有权
标题翻译：极化反转单元的制作方法
公开(公告)号：US20070092979A1
公开(公告)日：2007-04-26
申请号：US11636232
申请日：2006-12-08
申请人： Shoichiro Yamaguchi , Yuichi Iwata , Kengo Suzuki
发明人： Shoichiro Yamaguchi , Yuichi Iwata , Kengo Suzuki
IPC分类号： H01L21/00 , H01L29/94 , H01L27/108 , H01L29/76 , H01L31/119
CPC分类号： G02F1/3558
摘要： It is provided a novel method of producing polarization inversion parts by electric field polling process wherein the polarization inversion part extends to a deeper point from the surface of a substrate. The polarization inversion part is produced by electric field polling process using a comb electrode having a plurality of electrode portions 5 and a feeding portion 1. Each electrode portion 5 has a base portion 6 extending from the feeding portion 1 and a plurality of conductive portions 5a, 5b and 5c separated from the base portions 6, and the conductive portions have an average length “d” of 4 μm or longer and 9 μm or shorter. Alternatively, each electrode portion 5 has a base portion 6 extending from the feeding portion 1 and a plurality of conductive portions 5a, 5b and 5c separated from the base portion 6, and the conductive portion 5b at the tip end of the electrode portion has a length “db” smaller than the length “da” of the conductive portion 5b nearest to the base portion.
摘要翻译：提供了一种通过电场轮询过程产生极化反转部分的新方法，其中极化反转部分延伸到从衬底表面的较深点。通过使用具有多个电极部分5和馈电部分1的梳状电极的电场轮询处理产生极化反转部分。每个电极部分5具有从馈电部分1延伸的基部6和与基部6分离的多个导电部分5a，5b和5c，并且导电部分的平均长度“d”为4μm 或更长，9个月或更短。或者，每个电极部分5具有从馈电部分1延伸的基部6和与基部6分离的多个导电部分5a，5b和5c以及在基部6的尖端处的导电部分5b 电极部分的长度“db”小于最接近基部的导电部分5b的长度“da”。

7. 发明授权

US07668410B2 Production method for polarization inversion unit 有权
标题翻译：极化反转单元的制作方法
公开(公告)号：US07668410B2
公开(公告)日：2010-02-23
申请号：US11636232
申请日：2006-12-08
申请人： Shoichiro Yamaguchi , Yuichi Iwata , Kengo Suzuki
发明人： Shoichiro Yamaguchi , Yuichi Iwata , Kengo Suzuki
IPC分类号： G02B6/00 , G02F2/02
CPC分类号： G02F1/3558
摘要： It is provided a novel method of producing polarization inversion parts by electric field polling process wherein the polarization inversion part extends to a deeper point from the surface of a substrate. The polarization inversion part is produced by electric field polling process using a comb electrode having a plurality of electrode portions 5 and a feeding portion 1. Each electrode portion 5 has a base portion 6 extending from the feeding portion 1 and a plurality of conductive portions 5a, 5b and 5c separated from the base portions 6, and the conductive portions have an average length “d” of 4 μm or longer and 9 μm or shorter. Alternatively, each electrode portion 5 has a base portion 6 extending from the feeding portion 1 and a plurality of conductive portions 5a, 5b and 5c separated from the base portion 6, and the conductive portion 5b at the tip end of the electrode portion has a length “db” smaller than the length “da” of the conductive portion 5b nearest to the base portion.
摘要翻译：提供了一种通过电场轮询过程产生极化反转部分的新方法，其中极化反转部分延伸到从衬底表面的较深点。通过使用具有多个电极部分5和馈电部分1的梳状电极的电场轮询处理产生极化反转部分。每个电极部分5具有从馈送部分1延伸的基部6和多个导电部分5a 5b，5c与基部6分离，导电部的平均长度d为4μm以上且9μm以下。或者，各电极部5具有从供电部1延伸的基部6和与基部6分离的多个导电部5a，5b，5c，电极部的前端的导电部5b具有长度“db”小于最靠近基部的导电部分5b的长度“da”。

8. 发明授权

US07522791B2 Method for fabricating polarization reversal structure and reversal structure 有权
标题翻译：制造极化反转结构和反转结构的方法
公开(公告)号：US07522791B2
公开(公告)日：2009-04-21
申请号：US11713238
申请日：2007-03-01
申请人： Shoichiro Yamaguchi , Yuichi Iwata , Kengo Suzuki
发明人： Shoichiro Yamaguchi , Yuichi Iwata , Kengo Suzuki
IPC分类号： G02B6/26 , G02B6/10 , G02F1/35
CPC分类号： G02F1/3558
摘要： When a domain inversion part is produced by means of electric field polling process, damage in the vicinity of the forward end of a comb electrode and deviation of width of each domain inversion part are to be reduced. A polarization domain inversion structure has polarization domain inversion parts is produced by electric field poling process using a comb electrode formed on one surface of a substrate of a ferroelectric single crystal and of a single domain, and the comb electrode has a plurality of electrode portions and feeding portion. Each of the electrode portions corresponds with each domain inversion part of the domain inversion structure. The electrode portion has a plurality of low resistance pieces arranged in a direction “F” intersecting the longitudinal direction “E” of the electrode portion and spaced apart with each other.
摘要翻译：当通过电场轮询处理产生畴反转部分时，将减少梳状电极前端附近的损伤和每个畴反转部分的宽度偏差。偏振域反转结构具有偏振域反转部分，其通过使用形成在铁电单晶体的单个表面上的梳状电极和单个畴的电场极化处理产生，并且梳状电极具有多个电极部分和进料部分。每个电极部分对应于畴反转结构的每个畴反转部分。电极部具有与电极部的长度方向“E”交叉的方向“F”排列并彼此间隔开的多个低电阻片。

9. 发明申请

US20070258131A1 Method for fabricating polarization reversal structure and reversal structure 有权
标题翻译：制造极化反转结构和反转结构的方法
公开(公告)号：US20070258131A1
公开(公告)日：2007-11-08
申请号：US11713238
申请日：2007-03-01
申请人： Shoichiro Yamaguchi , Yuichi Iwata , Kengo Suzuki
发明人： Shoichiro Yamaguchi , Yuichi Iwata , Kengo Suzuki
IPC分类号： G02F1/35
CPC分类号： G02F1/3558
摘要： When a domain inversion part is produced by means of electric field polling process, damage in the vicinity of the forward end of a comb electrode and deviation of width of each domain inversion part are to be reduced. A polarization domain inversion structure has polarization domain inversion parts is produced by electric field poling process using a comb electrode formed on one surface of a substrate of a ferroelectric single crystal and of a single domain, and the comb electrode has a plurality of electrode portions and feeding portion. Each of the electrode portions corresponds with each domain inversion part of the domain inversion structure. The electrode portion has a plurality of low resistance pieces arranged in a direction “F” intersecting the longitudinal direction “E” of the electrode portion and spaced apart with each other.
摘要翻译：当通过电场轮询处理产生畴反转部分时，将减少梳状电极前端附近的损伤和每个畴反转部分的宽度偏差。偏振域反转结构具有偏振域反转部分，其通过使用形成在铁电单晶体的单个表面上的梳状电极和单个畴的电场极化处理产生，并且梳状电极具有多个电极部分和进料部分。每个电极部分对应于畴反转结构的每个畴反转部分。电极部具有与电极部的长度方向“E”交叉的方向“F”排列并彼此间隔开的多个低电阻片。

10. 发明授权

US07453625B2 Method of producing domain inversion parts and optical devices 有权
标题翻译：产生域反转部分和光学器件的方法
公开(公告)号：US07453625B2
公开(公告)日：2008-11-18
申请号：US11336308
申请日：2006-01-20
申请人： Shoichiro Yamaguchi , Makoto Iwai , Yuichi Iwata
发明人： Shoichiro Yamaguchi , Makoto Iwai , Yuichi Iwata
IPC分类号： G02F1/00 , G02F1/35
CPC分类号： G02F1/3558 , G02F1/3775
摘要： A comb electrode 3 is provided on a first main face 2a and a uniform electrode 4 is provided on a second main face 2b of a substrate made of a ferroelectric single crystal of a single domain, and a voltage is applied on the comb electrode 3 and the uniform electrode 4 to produce domain inversion part. It is laminated, on the substrate, an underlying substrate comprising a main body 5, a first conductive film 6 provided on a first main face 5a and a second conductive film 7 provided on a second main face 5b of the main body 5. The uniform electrode 4 is electrically conducted with the first conductive film 6 and a voltage is applied on the comb electrode 3 and the second conductive film 7 to form a domain inversion part in the substrate 2.
摘要翻译：梳状电极3设置在第一主面2a上，并且均匀电极4设置在由单畴的铁电单晶构成的基板的第二主面2b上，并且电压施加在梳状电极 3和均匀电极4产生畴反转部分。在基板上层叠下面的基板，该基板包括主体5，设置在第一主面5a上的第一导电膜6和设置在主体5的第二主表面5b上的第二导电膜7。均匀电极4与第一导电膜6导电，并且在梳电极3和第二导电膜7上施加电压，以在基板2中形成畴反转部分。

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