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1. 发明申请

US20050124168A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050124168A1
公开(公告)日：2005-06-09
申请号：US10969429
申请日：2004-10-21
申请人： Seiji Nagahara , Kazutoshi Shiba , Nobuaki Hamanaka , Tatsuya Usami , Takashi Yokoyama
发明人： Seiji Nagahara , Kazutoshi Shiba , Nobuaki Hamanaka , Tatsuya Usami , Takashi Yokoyama
IPC分类号： G03F7/38 , H01L21/027 , H01L21/311 , H01L21/768 , H01L21/00 , H01L21/302 , H01L21/461 , H01L21/84
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/31138 , H01L21/76807 , H01L21/76808 , H01L21/76811 , H01L21/76825 , H01L21/76828 , H01L21/76831
摘要： A method of manufacturing a semiconductor device having a damascene structure contains a process of forming a first interlayer insulating film (6) and a second interlayer insulating film (4) formed of a low dielectric-constant film on a substrate, forming via holes (9) by using a first resist pattern (1a) formed on the second interlayer insulating film, conducting an organic peeling treatment using organic peeling liquid containing amine components and then forming a second resist pattern (1b) on the second interlayer insulating film. After the wet treatment, before a second antireflection coating (2b) is coated so as to be located below the second resist pattern is coated, at least one of an annealing treatment, a plasma treatment, a UV treatment and an organic solvent treatment is carried out to remove amine components which inhibit the catalysis reaction of acid occurring in the resist at the light exposure, thereby preventing degradation of the resolution of the second resist pattern (1b).
摘要翻译：一种制造具有镶嵌结构的半导体器件的方法包括在衬底上形成第一层间绝缘膜（6）和由低介电常数膜形成的第二层间绝缘膜（4）的工艺，形成通孔（9 ）通过使用形成在第二层间绝缘膜上的第一抗蚀剂图案（1a），使用含有胺成分的有机剥离液进行有机剥离处理，然后在第二层间绝缘膜上形成第二抗蚀剂图案（1b）。在湿处理之后，涂覆第二抗反射涂层（2b）以便位于第二抗蚀图案下方的涂层，退火处理，等离子体处理，UV处理和有机溶剂处理中的至少一个是进行以除去抑制在曝光时在抗蚀剂中发生的酸的催化反应的胺成分，从而防止第二抗蚀剂图案（1b）的分辨率的劣化。

2. 发明授权

US06479407B2 Semiconductor device and process for producing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06479407B2
公开(公告)日：2002-11-12
申请号：US09770114
申请日：2001-01-23
申请人： Takashi Yokoyama , Tatsuya Usami
发明人： Takashi Yokoyama , Tatsuya Usami
IPC分类号： H01L2131
CPC分类号： H01L21/76834 , H01L21/76801 , H01L21/76802 , H01L21/76814 , H01L21/76826 , H01L21/76828 , H01L21/76831 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An interlayer insulation film containing a dielectric component represented by a chemical formula having a Si—E bond or a Si—CH3 bond is formed on a substrate. Next, a photoresist is formed on the interlayer insulation film. The photoresist is then formed into a form of a contact hole. Thereafter, dry-etching of the interlayer insulation film is conducted by use of the photoresist as a mask. Subsequently, the photoresist is removed, and the interlayer insulation film is exposed to nitrogen plasma and hydrogen plasma, for example.
摘要翻译：在基板上形成含有由具有Si-E键或Si-CH3键的化学式表示的电介质成分的层间绝缘膜。接着，在层间绝缘膜上形成光致抗蚀剂。然后将光致抗蚀剂形成为接触孔的形式。此后，通过使用光致抗蚀剂作为掩模进行层间绝缘膜的干法蚀刻。随后，除去光致抗蚀剂，并且例如将层间绝缘膜暴露于氮等离子体和氢等离子体。

3. 发明授权

US06255732B1 Semiconductor device and process for producing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06255732B1
公开(公告)日：2001-07-03
申请号：US09366517
申请日：1999-08-03
申请人： Takashi Yokoyama , Tatsuya Usami
发明人： Takashi Yokoyama , Tatsuya Usami
IPC分类号： H01L2348
CPC分类号： H01L21/76834 , H01L21/76801 , H01L21/76802 , H01L21/76814 , H01L21/76826 , H01L21/76828 , H01L21/76831 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An interlayer insulation film containing a dielectric component represented by a chemical formula having a Si—H bond or a Si—CH3 bond is formed on a substrate. Next, a photoresist is formed on the interlayer insulation film. The photoresist is then formed into a form of a contact hole. Thereafter, dry-etching of the interlayer insulation film is conducted by use of the photoresist as a mask. Subsequently, the photoresist is removed, and the interlayer insulation film is exposed to nitrogen plasma and hydrogen plasma, for example.
摘要翻译：在基板上形成含有由Si-H键或Si-CH3键形成的化学式表示的介电成分的层间绝缘膜。接着，在层间绝缘膜上形成光致抗蚀剂。然后将光致抗蚀剂形成为接触孔的形式。此后，通过使用光致抗蚀剂作为掩模进行层间绝缘膜的干法蚀刻。随后，除去光致抗蚀剂，并且例如将层间绝缘膜暴露于氮等离子体和氢等离子体。

4. 发明授权

US07217654B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07217654B2
公开(公告)日：2007-05-15
申请号：US10969429
申请日：2004-10-21
申请人： Seiji Nagahara , Kazutoshi Shiba , Nobuaki Hamanaka , Tatsuya Usami , Takashi Yokoyama
发明人： Seiji Nagahara , Kazutoshi Shiba , Nobuaki Hamanaka , Tatsuya Usami , Takashi Yokoyama
IPC分类号： H01L21/4763
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/31138 , H01L21/76807 , H01L21/76808 , H01L21/76811 , H01L21/76825 , H01L21/76828 , H01L21/76831
摘要： A method of manufacturing a semiconductor device having a damascene structure contains a process of forming a first interlayer insulating film (6) and a second interlayer insulating film (4) formed of a low dielectric-constant film on a substrate, forming via holes (9) by using a first resist pattern (1a) formed on the second interlayer insulating film, conducting an organic peeling treatment using organic peeling liquid containing amine components and then forming a second resist pattern (1b) on the second interlayer insulating film. After the wet treatment, before a second antireflection coating (2b) is coated so as to be located below the second resist pattern is coated, at least one of an annealing treatment, a plasma treatment, a UV treatment and an organic solvent treatment is carried out to remove amine components which inhibit the catalysis reaction of acid occurring in the resist at the light exposure, thereby preventing degradation of the resolution of the second resist pattern (1b).
摘要翻译：一种制造具有镶嵌结构的半导体器件的方法包括在衬底上形成第一层间绝缘膜（6）和由低介电常数膜形成的第二层间绝缘膜（4）的工艺，形成通孔（9 ）通过使用形成在第二层间绝缘膜上的第一抗蚀剂图案（1a），使用含有胺成分的有机剥离液进行有机剥离处理，然后在第二层间绝缘膜上形成第二抗蚀剂图案（1b）。在湿处理之后，涂覆第二抗反射涂层（2b）以便位于第二抗蚀图案下方的涂层，退火处理，等离子体处理，UV处理和有机溶剂处理中的至少一个是进行以除去抑制在曝光时在抗蚀剂中发生的酸的催化反应的胺成分，从而防止第二抗蚀剂图案（1b）的分辨率的劣化。

5. 发明申请

US20070096331A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070096331A1
公开(公告)日：2007-05-03
申请号：US11640349
申请日：2006-12-18
申请人： Seiji Nagahara , Kazutoshi Shiba , Nobuaki Hamanaka , Tatsuya Usami , Takashi Yokoyama
发明人： Seiji Nagahara , Kazutoshi Shiba , Nobuaki Hamanaka , Tatsuya Usami , Takashi Yokoyama
IPC分类号： H01L23/48
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/31138 , H01L21/76807 , H01L21/76808 , H01L21/76811 , H01L21/76825 , H01L21/76828 , H01L21/76831
摘要： A method of manufacturing a semiconductor device having a damascene structure contains a process of forming a first interlayer insulating film and a second interlayer insulating film formed of a low dielectric constant film on a substrate, forming via holes by using a first resist pattern formed on the second interlayer insulating film, conducting an organic peeling treatment using organic peeling liquid containing amine components and then forming a second resist pattern on the second interlayer insulating film. After the wet treatment before a second antireflection coating is coated so as to be located below the second resist pattern is coated, at least one of an annealing treatment, a plasma treatment, a UV treatment and an organic solvent treatment is carried out to remove amine components which inhibit the catalysis reaction of acid occurring in the resist at the light exposure, thereby preventing degradation of the resolution of the second resist pattern.
摘要翻译：一种制造具有镶嵌结构的半导体器件的方法包括在基板上形成第一层间绝缘膜和由低介电常数膜形成的第二层间绝缘膜的工艺，通过使用形成在第一层上绝缘膜上的第一抗蚀剂图案形成通孔第二层间绝缘膜，使用含有胺成分的有机剥离液进行有机剥离处理，然后在第二层间绝缘膜上形成第二抗蚀剂图案。在第二抗反射涂层涂布第二抗蚀剂图案之下的湿处理之后，涂覆第二抗蚀图案，进行退火处理，等离子体处理，UV处理和有机溶剂处理中的至少一种以除去胺抑制在曝光时在抗蚀剂中发生的酸的催化反应的成分，从而防止第二抗蚀剂图案的分辨率的劣化。

6. 外观设计

USD974667S1 Baseball glove 有权
公开(公告)号：USD974667S1
公开(公告)日：2023-01-03
申请号：US29824124
申请日：2022-01-21
申请人： Takashi Yokoyama , Naoto Kamitake
设计人： Takashi Yokoyama , Naoto Kamitake

7. 发明授权

US09219077B2 Semiconductor device and fabrication method therefor 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US09219077B2
公开(公告)日：2015-12-22
申请号：US13430212
申请日：2012-03-26
申请人： Takashi Yokoyama
发明人： Takashi Yokoyama
IPC分类号： H01L29/78 , H01L27/12 , H01L21/84 , H01L21/762 , H01L21/8238
CPC分类号： H01L29/7848 , H01L21/76251 , H01L21/823807 , H01L21/823878 , H01L21/84 , H01L23/5226 , H01L23/5227 , H01L23/53214 , H01L23/53228 , H01L23/53257 , H01L25/0657 , H01L27/0924 , H01L27/1203 , H01L29/045 , H01L29/1608 , H01L29/165 , H01L29/4966 , H01L29/518 , H01L29/7843 , H01L2224/9212 , H01L2225/06541 , H01L2225/06558 , H01L2924/0002 , H01L2924/00 , H01L2224/80896 , H01L2224/8203 , H01L2224/821 , H01L2224/80001 , H01L2224/82
摘要： A semiconductor device includes: a first substrate on which a first field effect transistor is provided; and a second substrate on which a second field effect transistor of a second conductive type is provided; the first and second substrates being bonded to each other at the substrate faces thereof on which the first and second field transistors are provided, respectively; the first field effect transistor and the second field effect transistor being electrically connected to each other.
摘要翻译：半导体器件包括：第一衬底，其上设置有第一场效应晶体管; 以及第二基板，其上设置有第二导电类型的第二场效应晶体管; 第一和第二基板分别在其上设置有第一和第二场晶体管的基板面彼此接合; 第一场效应晶体管和第二场效应晶体管彼此电连接。

8. 发明申请

US20130064616A1 TOOL RADIUS ADJUSTING METHOD IN MACHINE TOOL AND MACHINE TOOL FOR PRACTICING THE METHOD 有权
标题翻译：用于实施方法的机床工具和机床的工具半径调整方法
公开(公告)号：US20130064616A1
公开(公告)日：2013-03-14
申请号：US13509911
申请日：2010-11-10
申请人： Eiji Nakamura , Akihiko Kadota , Takashi Yokoyama , Yasuhiro Komai , Harumi Sawaki , Shun Sawaki , Aya Sawaki , Taku Sawaki
发明人： Eiji Nakamura , Norikazu Sawaki , Akihiko Kadota , Takashi Yokoyama , Yasuhiro Komai
IPC分类号： B23B47/22 , B23B35/00
CPC分类号： B23B29/03403 , B23B29/03421 , B23B29/03425 , B23B29/03489 , B23B35/00 , B23B2250/04 , B23B2270/025 , B23B2270/027 , B23B2270/48 , Y10T82/10 , Y10T408/03 , Y10T408/175 , Y10T408/85 , Y10T408/858
摘要： At a contact step in a tool radius adjusting method, a reference portion of a movable body provided radially movably on a housing of a boring tool and a position adjusting reference member fixed on a machine tool are brought into contact by sliding the movable body relative to the housing so that the position of a cutting blade comes to a predetermined position in a direction to go away from a rotational axis. Then, at an adjusting step, the position of the cutting blade relative to the rotational axis is adjusted by changing the relative position between a tool spindle holding the boring tool and the position adjusting reference member in a direction to come close to each other by drive mechanisms of the machine tool used for positioning a spindle head with the tool spindle relative to a workpiece in machining the workpiece with the cutting blade.
摘要翻译：在工具半径调整方法的接触步骤中，通过使可移动体相对于所述移动体相对于所述可移动体相对于所述移动体相对于所述移动体相对于所述移动体相对于所述移动体所述壳体使得切割刀片的位置在远离旋转轴线的方向上到达预定位置。然后，在调整步骤中，通过在保持钻孔工具的工具主轴与位置调整基准构件之间的相对位置通过驱动方向彼此靠近的方向来改变切割刀片相对于旋转轴线的位置机床用于在与切割刀片一起加工工件时，将主轴头与工具主轴相对于工件定位。

9. 发明申请

US20120058871A1 MACHINE TOOL INCLUDING TOOL RADIUS ADJUSTING DEVICE 有权
标题翻译：机器工具包括工具RADIUS调整设备
公开(公告)号：US20120058871A1
公开(公告)日：2012-03-08
申请号：US13217555
申请日：2011-08-25
申请人： Eiji NAKAMURA , Akihiko Kadota , Takashi Yokoyama
发明人： Eiji NAKAMURA , Akihiko Kadota , Takashi Yokoyama
IPC分类号： B23Q3/157
CPC分类号： B23Q3/15713 , B23B29/03421 , B23B29/03425 , B23B29/03432 , B23Q3/1574 , Y10T408/76 , Y10T408/856 , Y10T408/85843 , Y10T483/12 , Y10T483/13 , Y10T483/15 , Y10T483/1738
摘要： A tool radius adjusting device executes an operation for adjusting the tool radius of a boring holder in parallel with execution of a machining program for executing an operation of a spindle head and an operation of a tool changer. A carrier control unit determines whether the tool changer is executing a tool changing process. When the tool changing process is not being executed, the carrier control unit allows the carrier device to execute an operation for picking the boring holder out from the tool magazine and an operation for returning the boring holder, of which the tool radius has been adjusted, to the tool magazine.
摘要翻译：刀具半径调节装置执行与执行用于执行主轴头的操作的加工程序和刀具更换器的操作并行地调整镗刀架的刀具半径的操作。载体控制单元确定换刀器是否正在执行换刀过程。当不执行换刀过程时，承运人控制单元允许承运人装置执行从工具仓中取出镗刀架的操作和用于使已经调整了刀具半径的镗刀架返回的操作，到工具杂志。

10. 发明申请

US20110022400A1 AUDIO RESUME PLAYBACK DEVICE AND AUDIO RESUME PLAYBACK METHOD 审中-公开
标题翻译：音频恢复播放设备和音频恢复播放方法
公开(公告)号：US20110022400A1
公开(公告)日：2011-01-27
申请号：US12847701
申请日：2010-07-30
申请人： Yukihiko KIMURA , Takashi Yokoyama , Tetsuya Oooka
发明人： Yukihiko KIMURA , Takashi Yokoyama , Tetsuya Oooka
IPC分类号： G10L19/00 , G06F17/00
CPC分类号： G10L19/167
摘要： An audio playback device includes an interruption-information storage memory which holds frame information at the time of an interruption of playback, a compressed-stream control section which calculates a start position of reading the compressed stream from a recording medium, and reads the compressed stream accordingly, a compressed-stream decode section which decodes the compressed audio stream and transmits decoding information on the frame to the compressed-stream control section as additional resume information, and an output control section which outputs a decoding result. When playback is restarted after an interruption, playback can be restarted without any section not played back in terms of time and without any frequency range not played back, by calculating the start position of reading the compressed stream based on both the additional resume information and the frame information at the time of the interruption, and by reading the compressed stream accordingly.
摘要翻译：音频播放装置包括：中断信息存储存储器，其在重放中断时保存帧信息;压缩流控制部分，其计算从记录介质读取压缩流的开始位置，并读取压缩流因此，压缩流解码部分对压缩音频流进行解码，并将该帧上的解码信息作为附加恢复信息发送到压缩流控制部分，以及输出控制部分，其输出解码结果。当在中断之后重新开始播放时，可以重新开始播放，而不会在时间上没有播放的部分，而没有任何频率范围不被重放，通过计算基于附加的恢复信息和在中断时的帧信息，以及相应地读取压缩流。

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