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    • 1. 发明申请
    • Flat belt
    • 平带
    • US20060234820A1
    • 2006-10-19
    • US11393870
    • 2006-03-31
    • Takashi YamamotoTatsuya Nozaki
    • Takashi YamamotoTatsuya Nozaki
    • F16G1/04
    • B65G15/34B65G2201/022F16G1/16F16G3/16
    • A flat belt has a longitudinal reinforcement fabric to reinforce the flat belt along the longitudinal direction. A first thermoplastic resin layer is laminated on an upper side of the longitudinal reinforcement fabric. A second thermoplastic resin layer is laminated on a lower side of the longitudinal reinforcement fabric. A first lateral reinforcement fabric is laminated on an upper side of the first thermoplastic resin layer to reinforce the flat belt along the lateral direction. A second lateral reinforcement fabric is laminated on a lower side of the second thermoplastic resin layer to reinforce the flat belt along the lateral direction. A first friction layer is provided above an upper side of the first lateral reinforcement fabric, and is formed with a conveyor surface for conveying a subject.
    • 扁平带具有纵向加强织物,以沿纵向方向加强扁平带。 第一热塑性树脂层层压在纵向加强织物的上侧。 第二热塑性树脂层层压在纵向加强织物的下侧。 第一横向加强织物层叠在第一热塑性树脂层的上侧,以沿着横向加强扁平带。 第二横向加强织物层压在第二热塑性树脂层的下侧,以沿横向加强扁平带。 第一摩擦层设置在第一侧向加强织物的上侧上方,并且形成有用于输送被检体的输送面。
    • 5. 发明申请
    • SEMICONDUCTOR EPITAXIAL SUBSTRATE
    • 半导体外延基片
    • US20130001645A1
    • 2013-01-03
    • US13582365
    • 2011-03-01
    • Koji KakutaTatsuya NozakiSusumu Kanai
    • Koji KakutaTatsuya NozakiSusumu Kanai
    • H01L29/02H01L21/66
    • H01L21/02546H01L21/02392H01L21/02433H01L21/02461H01L21/02463H01L21/02502H01L21/0251H01L21/02609H01L21/0262
    • Provided is a semiconductor epitaxial substrate which has low semiconductor layer mosaicity and is suitable for the production of a semiconductor device. Specifically provided is a semiconductor epitaxial substrate formed by epitaxially growing a graded buffer layer which is compositionally graded such that the lattice constant increases in stages within a range from a first lattice constant to a second lattice constant larger than the first lattice constant, and a semiconductor layer produced from a semiconductor crystal having the second lattice constant on a semiconductor substrate having the first lattice constant. The angle formed by the (mnn) plane (m and n are integers except m=n=0) of the semiconductor layer and the (mnn) plane of the semiconductor substrate is set to +0.05° or more when the direction that rotates clockwise from the [100] direction to the [011] direction is positive.
    • 本发明提供一种具有低半导体层的马赛克并适用于制造半导体器件的半导体外延基片。 具体提供的是通过外延生长梯度缓冲层而形成的半导体外延衬底,其被组成分级,使得晶格常数在从第一晶格常数到比第一晶格常数大的第二晶格常数的范围内逐级增加,半导体 在具有第一晶格常数的半导体衬底上由具有第二晶格常数的半导体晶体产生的层。 当半导体衬底的半导体层和(mnn)面的(mnn)面(m和n除了m = n = 0以外的整数)形成的角度被设定为+ 0.05°以上, 从[100]方向到[011]方向是正的。
    • 8. 发明授权
    • Method of manufacturing compound semiconductor single crystal
    • 制造化合物半导体单晶的方法
    • US06334897B1
    • 2002-01-01
    • US09424794
    • 1999-11-30
    • Toshiaki AsahiKeiji KainoshoTatsuya NozakiKenji Sato
    • Toshiaki AsahiKeiji KainoshoTatsuya NozakiKenji Sato
    • C30B1314
    • C30B29/46C30B11/00C30B11/002C30B11/003C30B29/40C30B29/48
    • A method for producing a compound semiconductor single crystal, comprises the steps of: using a crucible having a bottom, a cylindrical shape, a diameter increasing portion having a reversed conical shape in a lower end side of the crucible, and a set portion for a seed crystal in a center of the bottom of the diameter increasing portion; setting a seed crystal in the seed crystal set portion of the crucible; putting a raw material of the compound semiconductor and an encapsulating material into the crucible; enclosing the crucible in an inner container; thereafter setting the inner container in a vertical type furnace; heating the raw material and the encapsulating material by a heating means to melt; and solidifying the obtained raw material melt from the seed crystal toward an upper side with annealing the raw material melt from a lower side to grow a single crystal of the compound semiconductor; wherein a rate of crystal growth at the diameter increasing portion of the crucible is made not less than 20 mm/hr during the crystal is grown.
    • 一种制备化合物半导体单晶的方法,包括以下步骤:使用具有底部,圆筒形状的坩埚,在坩埚的下端侧具有倒锥形的直径增加部分,以及用于 种子晶体在直径增加部分的底部的中心; 将晶种设置在坩埚的晶种组合部分中; 将化合物半导体的原料和封装材料放入坩埚中; 将坩埚封闭在内部容器中; 然后将内容器设置在立式炉中; 通过加热装置加热原料和包封材料以熔化; 并且通过从下侧退火原料熔体而将获得的原料熔体从晶种固化到上侧,以生长化合物半导体的单晶; 其中在晶体生长期间,在坩埚的直径增加部分处的晶体生长速率不小于20mm / hr。