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1. 发明授权

US06228457B1 Optical data storage medium 有权
标题翻译：光学数据存储介质
公开(公告)号：US06228457B1
公开(公告)日：2001-05-08
申请号：US09399108
申请日：1999-09-20
申请人： Takashi Ueno , Keiichiro Jinushi , Katsuhisa Aratani , Masaaki Iwasaki , Ryohei Miyake
发明人： Takashi Ueno , Keiichiro Jinushi , Katsuhisa Aratani , Masaaki Iwasaki , Ryohei Miyake
IPC分类号： B32B300
CPC分类号： G11B7/258 , C23C14/185 , G11B7/24 , G11B7/243 , G11B7/2534 , G11B7/2542 , G11B7/256 , G11B7/2585 , Y10S428/913 , Y10S430/146 , Y10T428/21
摘要： There is disclosed an optical data storage medium in which the weather resistance of the semitransparent reflective film is improved and the adhesive property between the semitransparent reflective film and a substrate is enhanced, and which has a higher reliability. In an optical data storage medium (6), on the side on which a reproduction light (8) is incident, a first information layer (9) is located while on the side opposite to the side on which the reproduction light (8) is incident, a second information layer (10) is located. A semitransparent reflective film (3) of first information layer (9) is AgPdCu alloy thin films containing 0.5 to 3.0 weight % Pd and 0.1 to 3.0 weight % Cu or AgPdTi alloy thin films containing 0.5 to 3.0 weight % Pd and 0.1 to 3.0 weight % Ti. At the wavelength 650 nm, the optimum film thickness of AgPdCu alloy thin film is 5 to 18 nm and the optimum film thickness of AgPdTi alloy thin film is 10 to 25 nm. At the wavelength 450 nm, the optimum film thickness of AgPdCu alloy thin film is 10 to 25 nm, and the optimum film thickness of AgPdTi alloy thin film is 15 to 25 nm.
摘要翻译：公开了一种光学数据存储介质，其中半透明反射膜的耐候性得到改善，并且半透明反射膜和基板之间的粘合性提高，并且其具有更高的可靠性。在光学数据存储介质（6）中，在再现光（8）入射的一侧上，第一信息层（9）位于与再现光（8）所在的一侧相反的一侧事件中，定位第二信息层（10）。第一信息层（9）的半透明反射膜（3）是包含0.5〜3.0重量％的Pd和0.1〜3.0重量％的含有0.5〜3.0重量％的Pd和0.1〜3.0重量％的Cu或AgPdTi合金薄膜的AgPdCu合金薄膜％Ti。在波长650nm处，AgPdCu合金薄膜的最佳膜厚为5〜18nm，AgPdTi合金薄膜的最佳膜厚为10〜25nm。在波长450nm处，AgPdCu合金薄膜的最佳膜厚为10〜25nm，AgPdTi合金薄膜的最佳膜厚为15〜25nm。

2. 发明授权

US06972076B1 Thin film formation use sputtering target material, thin film formed using same, and optical recording medium 有权
标题翻译：薄膜形成使用溅射靶材料，使用其形成的薄膜和光学记录介质
公开(公告)号：US06972076B1
公开(公告)日：2005-12-06
申请号：US09429719
申请日：1999-10-29
申请人： Katsuhisa Aratani , Takashi Ueno
发明人： Katsuhisa Aratani , Takashi Ueno
IPC分类号： C22C5/06 , C22C5/08 , C23C14/14 , C23C14/34 , G11B7/258 , G11B7/26
CPC分类号： C22C5/06 , C22C5/08 , C23C14/14 , C23C14/3414 , G11B7/258 , G11B7/259 , G11B7/26
摘要： An alloy material, a thin film and an optical recording medium to achieve various tasks such as maintenance of a high reflectivity, improved corrosion resistance, simplified production of the alloy, and realization of stability and simplicity/easiness of a sputtering process when being used as a sputtering target. An AgPd alloy including Ag as a main component and Pd in the range of 0.5 to 4.9 atomic % is used as a thin film formation use sputtering target material, with the target material a thin film, that is a reflecting film, constituting an optical recording medium is formed and the optical recording medium containing the reflecting film as a constituent is produced.
摘要翻译：合金材料，薄膜和光学记录介质，以实现各种任务，例如维持高反射率，改进的耐腐蚀性，简化合金的生产，并且当用作为溅射工艺时的稳定性和简单性/易于使用的溅射工艺溅射靶。使用包含Ag作为主要成分的AgPd合金和0.5至4.9原子％的Pd，作为薄膜形成用溅射靶材料，其中目标材料是构成光学记录的薄膜，即反射膜形成介质，并且制备含有反射膜作为组分的光学记录介质。

3. 发明申请

US20050129900A1 Thin film formation use sputtering target material, thin film formed using same, and optical recording medium 有权
公开(公告)号：US20050129900A1
公开(公告)日：2005-06-16
申请号：US11051281
申请日：2005-02-04
申请人： Katsuhisa Aratani , Takashi Ueno
发明人： Katsuhisa Aratani , Takashi Ueno
IPC分类号： C22C5/06 , C22C5/08 , C23C14/14 , C23C14/34 , G11B7/258 , G11B7/26 , B32B3/02
CPC分类号： C22C5/06 , C22C5/08 , C23C14/14 , C23C14/3414 , G11B7/258 , G11B7/259 , G11B7/26
摘要： An alloy material, a thin film and an optical recording medium to achieve various tasks such as maintenance of a high reflectivity, improved corrosion resistance, simplified production of the alloy, and realization of stability and simplicity/easiness of a sputtering process when being used as a sputtering target. An AgPd alloy including Ag as a main component and Pd in the range of 0.5 to 4.9 atomic % is used as a thin film formation use sputtering target material, with the target material a thin film, that is a reflecting film, constituting an optical recording medium is formed and the optical recording medium containing the reflecting film as a constituent is produced.

4. 发明授权

US06723281B1 Metal material for electronic parts, electronic parts, electronic apparatuses, and method of processing metal materials 有权
标题翻译：用于电子零件，电子零件，电子设备的金属材料和金属材料的加工方法
公开(公告)号：US06723281B1
公开(公告)日：2004-04-20
申请号：US09613892
申请日：2000-07-11
申请人： Takashi Ueno , Katsuhisa Aratani
发明人： Takashi Ueno , Katsuhisa Aratani
IPC分类号： C22C506
CPC分类号： G02F1/133553 , C22C5/06 , H01L23/53242 , H01L23/53247 , H01L23/53252 , H01L2924/0002 , H05K1/09 , H01L2924/00
摘要： The present invention relates to a metal material for electronic parts, electronic parts, electronic apparatuses, a method of processing metal materials, and electro-optical parts. For example, the present invention is applied to liquid crystal display panels, various semiconductor devices, wiring boards, chip parts, and the like. The present invention proposes a metal material for electronic parts which is characterized by lower resistivity, higher stability, and more excellent processability than the prior art. The present invention also proposes electronic parts and electronic apparatuses which use this metal material. An applicable metal material is an alloy containing Ag as a main component, 0.1 to 3 wt % of Pd, and 0.1 to 3 wt % in total of elements such as Al.
摘要翻译：本发明涉及电子部件用金属材料，电子部件，电子设备，金属材料的加工方法以及电光部件。例如，本发明适用于液晶显示面板，各种半导体装置，配线基板，芯片部件等。本发明提出了一种电子部件用金属材料，其特征在于比现有技术更低的电阻率，更高的稳定性和更优异的加工性能。本发明还提出了使用这种金属材料的电子部件和电子设备。适用的金属材料是以Ag为主要成分，0.1〜3重量％的Pd和0.1〜3重量％的Al等元素的合金。

5. 发明授权

US07198700B2 Thin film formation use sputtering target material, thin film formed using same, and optical recording medium 有权
标题翻译：薄膜形成使用溅射靶材料，使用其形成的薄膜和光学记录介质
公开(公告)号：US07198700B2
公开(公告)日：2007-04-03
申请号：US11051281
申请日：2005-02-04
申请人： Katsuhisa Aratani , Takashi Ueno
发明人： Katsuhisa Aratani , Takashi Ueno
IPC分类号： C23C14/34
CPC分类号： C22C5/06 , C22C5/08 , C23C14/14 , C23C14/3414 , G11B7/258 , G11B7/259 , G11B7/26
摘要： An alloy material, a thin film and an optical recording medium to achieve various tasks such as maintenance of a high reflectivity, improved corrosion resistance, simplified production of the alloy, and realization of stability and simplicity/easiness of a sputtering process when being used as a sputtering target. An AgPd alloy including Ag as a main component and Pd in the range of 0.5 to 4.9 atomic % is used as a thin film formation use sputtering target material, with the target material a thin film, that is a reflecting film, constituting an optical recording medium is formed and the optical recording medium containing the reflecting film as a constituent is produced.
摘要翻译：合金材料，薄膜和光学记录介质，以实现各种任务，例如维持高反射率，改进的耐腐蚀性，简化合金的生产，并且当用作为溅射工艺时的稳定性和简单性/易于使用的溅射工艺溅射靶。使用包含Ag作为主要成分的AgPd合金和0.5至4.9原子％的Pd，作为薄膜形成用溅射靶材料，其中目标材料是构成光学记录的薄膜，即反射膜形成介质，并且制备含有反射膜作为组分的光学记录介质。

6. 发明授权

US08614403B2 Electrostatic capacitance type input device 失效
标题翻译：静电电容式输入装置
公开(公告)号：US08614403B2
公开(公告)日：2013-12-24
申请号：US13322052
申请日：2010-05-26
申请人： Hiroshi Tanaka , Takashi Ueno
发明人： Hiroshi Tanaka , Takashi Ueno
IPC分类号： H03K17/975
CPC分类号： G06F3/044 , G06F2203/04111 , H03K17/9622 , H03K2217/96042 , H03K2217/960755
摘要： An electrostatic capacitance type input device is provided which has a structure in which translucent electrodes are aligned on the same layer in two axial directions, and has features that jumpers for connecting among the translucent electrodes in one of the two axial directions can be prevented from becoming conspicuous, and disconnection is less likely to occur. Jumpers 8 formed of an electrically conductive material are formed on a surface of a substrate 2, and thereafter an insulating film 6 is provided so as to cover the jumpers 8 and the substrate 2, and first translucent electrodes 3 and second translucent electrodes 4 are provided on the insulating film 6 so as to form a matrix. The first translucent electrodes 3 aligned in the leftward/rightward direction in the drawings are electrically connected to each other by the jumpers 8 via through holes 7 formed in the insulating film 6. On the other hand, the second translucent electrodes 4 aligned in the direction orthogonal to the surface of a sheet are connected to each other by connecting portions 5 which are formed by patterning so as to be integrated with the second translucent electrodes 4. Since the jumpers 8 for connecting among the first translucent electrodes 3 are formed on the substrate 2, the jumper 8 can be prevented from becoming conspicuous as viewed from the surface side.
摘要翻译：提供了一种静电电容型输入装置，其具有半透明电极沿两个轴向对准在同一层上的结构，并且具有能够防止在两个轴向中的一个方向上连接透光性电极的跳线变成显眼，断线不太可能发生。在基板2的表面上形成由导电材料形成的跳线8，然后设置绝缘膜6以覆盖跳线8和基板2，并且设置第一透光性电极3和第二透光性电极4 在绝缘膜6上形成矩阵。在图中左右方向排列的第一透光性电极3通过形成在绝缘膜6上的通孔7由跳线8电连接。另一方面，第二透光性电极4在方向通过图案形成的连接部分5与片材的表面正交地连接，以便与第二透光电极4一体化。由于用于连接第一透光性电极3的跳线8形成在基板上如图2所示，当从表面侧观察时，可以防止跳线8变得显眼。

7. 发明授权

US08267499B2 Head cap having air communicating channel, and liquid droplets ejection head recovering mechanism and liquid droplets ejection printer therefor 有权
标题翻译：头盖具有空气连通通道，液滴喷射头回收机构和液滴喷射打印机
公开(公告)号：US08267499B2
公开(公告)日：2012-09-18
申请号：US12542782
申请日：2009-08-18
申请人： Takashi Ueno
发明人： Takashi Ueno
IPC分类号： B41J2/165 , B41J2/155
CPC分类号： B41J2/16588 , B41J2/16547
摘要： A head cap, including: a cap including (a) a bottom plate portion and (b) a projecting portion which functions as a side wall, which extends from the bottom plate portion so as to define a recessed portion with the bottom plate portion, and whose distal end contacts with a surrounding of a liquid-droplets ejecting area formed in a liquid-droplets ejecting surface of a liquid-droplets ejecting head so as to enclose the liquid-droplets ejecting area; a holder configured to support the cap; a groove formed in at least one of a first surface of the bottom plate portion which is opposed to the holder and a second surface of the holder which is opposed to the bottom plate portion so as to partly constitute an air communicating channel that communicates the recessed portion and an outside with each other; and a channel wall provided between the first surface and the second surface so as to enclose the groove as seen in a direction perpendicular to one of the first surface and the second surface by contacting with at least one of the first surface and the second surface.
摘要翻译：一种头盖，包括：盖，包括（a）底板部分和（b）用作侧壁的突出部分，其从底板部分延伸以限定具有底板部分的凹陷部分，并且其远端与形成在液滴喷射头的液滴喷射表面中的液滴喷射区域的周围接触，以便包围液滴喷射区域; 保持器，其构造成支撑所述盖; 形成在所述底板部的与所述保持件相对的第一表面和与所述底板部相对的所述保持件的第二表面中的至少一个中的槽，以部分地构成连通所述凹部部分和外部彼此; 以及设置在所述第一表面和所述第二表面之间的通道壁，以便通过与所述第一表面和所述第二表面中的至少一个接触而在垂直于所述第一表面和所述第二表面中的一个方向的方向上包围所述凹槽。

8. 发明申请

US20120228757A1 COOLING STRUCTURE OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件的冷却结构
公开(公告)号：US20120228757A1
公开(公告)日：2012-09-13
申请号：US13511305
申请日：2009-11-25
申请人： Akio Kitami , Takashi Ueno
发明人： Akio Kitami , Takashi Ueno
IPC分类号： H01L23/36
CPC分类号： H01L23/427 , F28D15/0266 , H01L23/36 , H01L25/074 , H01L2224/32245 , H01L2224/33181 , H01L2924/1305 , H01L2924/13055 , H01L2924/00
摘要： A cooling structure of a semiconductor device includes an output electrode, a semiconductor element and a semiconductor element disposed to face each other with the output electrode interposed therebetween, a radiator disposed for the semiconductor element on a side opposite to the output electrode, and a radiator disposed for the semiconductor element on the side opposite to the output electrode. The output electrode includes an element mounting portion and a heat transport portion. The element mounting portion is electrically connected to the semiconductor element and the semiconductor element, and is formed of a conductive material. The heat transport portion is disposed to extend from the element mounting portion toward the radiator and the radiator. With this structure, a cooling structure of a semiconductor device with which excellent cooling efficiency is realized can be provided.
摘要翻译：半导体器件的冷却结构包括输出电极，半导体元件和半导体元件，半导体元件和半导体元件设置成彼此相对，输出电极介于其间;散热器，设置在半导体元件的与输出电极相对的一侧，散热器设置在与输出电极相对的一侧上的半导体元件。输出电极包括元件安装部分和热传输部分。元件安装部分电连接到半导体元件和半导体元件，并且由导电材料形成。热传输部分从元件安装部分朝向散热器和散热器设置。利用这种结构，可以提供实现优异的冷却效率的半导体器件的冷却结构。

9. 发明授权

US07076863B2 Apparatus for folding flat cable 失效
标题翻译：扁平电缆折叠装置
公开(公告)号：US07076863B2
公开(公告)日：2006-07-18
申请号：US10373071
申请日：2003-02-26
申请人： Isao Mori , Masanori Kato , Hiroshi Adachi , Kunihiro Mizui , Takashi Ueno
发明人： Isao Mori , Masanori Kato , Hiroshi Adachi , Kunihiro Mizui , Takashi Ueno
IPC分类号： B23P19/00
CPC分类号： B60R16/0207 , H01R12/772 , H01R2201/26 , Y10T29/53209 , Y10T29/53213 , Y10T29/53243
摘要： A connector holder holds a connector of a flat cable. Cable-folding members are provided on an arrangement path for the flat cable having the connector. The cable-folding member is provided at each of the folding positions of the flat cable that are specified on the arrangement path. The cable-folding member includes a positioning section for disposing the flat cable on the arrangement path and a direction-defining section for specifying a folding angle of the flat cable F in association with the positioning section. A successive folding apparatus and a successive folding method can enhance accuracies in dimension and operation in a successive folding process of a flat cable F.
摘要翻译：连接器支架固定扁平电缆的连接器。电缆折叠构件设置在具有连接器的扁平电缆的布置路径上。电缆折叠构件设置在在布置路径上指定的扁平电缆的每个折叠位置处。电缆折叠构件包括用于将扁平电缆布置在布置路径上的定位部分和用于指定与定位部分相关联的扁平电缆F的折叠角度的方向限定部分。连续折叠装置和连续折叠方法可以在扁平电缆F的连续折叠过程中提高尺寸和操作的精度。

10. 发明授权

US06949623B2 Method for gene transfer into target cells with retrovirus 失效
标题翻译：用逆转录病毒将基因转移入靶细胞的方法
公开(公告)号：US06949623B2
公开(公告)日：2005-09-27
申请号：US09775964
申请日：2001-02-02
申请人： Kiyozo Asada , Takashi Uemori , Takashi Ueno , Nobuto Koyama , Kimikazu Hashino , Ikunoshin Kato
发明人： Kiyozo Asada , Takashi Uemori , Takashi Ueno , Nobuto Koyama , Kimikazu Hashino , Ikunoshin Kato
IPC分类号： A61K48/00 , C07K14/505 , C07K14/78 , C12N9/10 , C12N15/12 , C12N15/867 , C07K1/00
CPC分类号： C12N15/86 , A61K48/00 , C07K14/505 , C07K14/78 , C07K2319/00 , C12N9/1088 , C12N2740/13043 , C12N2740/13045
摘要： The present invention provides a method for increasing the efficiency of gene transfer into target cells with a retrovirus. The transduction is affected by infecting target cells with a retrovirus in the presence of a mixture of a functional material having a retrovirus binding domain, and a second functional material having target cell binding domain. The target cells may be selected from the group of unintentional hematopoietic progenitor cells and erythrocyte precursor, specifically pluripotent stem cells or embryopalstic stem cells.
摘要翻译：本发明提供了用逆转录病毒提高基因转移到靶细胞的效率的方法。在具有逆转录病毒结合域的功能材料和具有靶细胞结合结构域的第二功能材料的混合物存在下，用逆转录病毒感染靶细胞影响转导。靶细胞可以选自无意造血祖细胞和红细胞前体，特别是多能干细胞或胚胎干细胞。

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