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1. 发明授权

US07569875B2 Semiconductor device and a method for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07569875B2
公开(公告)日：2009-08-04
申请号：US11717790
申请日：2007-03-14
申请人： Takashi Suzuki , Sachiko Tanaka , Masayasu Ishiko , Jun Saito , Tsuyoshi Nishiwaki , Yukihiro Hisanaga , Hidehiro Nakagawa , Hirokazu Saito
发明人： Takashi Suzuki , Sachiko Tanaka , Masayasu Ishiko , Jun Saito , Tsuyoshi Nishiwaki , Yukihiro Hisanaga , Hidehiro Nakagawa , Hirokazu Saito
IPC分类号： H01L29/80
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0661 , H01L29/402 , H01L29/41741 , H01L29/66136 , H01L29/7397 , H01L29/7813 , H01L29/861 , H01L29/868
摘要： A semiconductor device having a substrate; an emitter electrode or source electrode formed on the top surface side of the substrate; a gate electrode formed on the top surface side of the substrate; and a collector electrode or drain electrode formed on the bottom surface side of the substrate. The device includes an insulating region formed so as to surround a device-forming region provided on the top surface side of the substrate; and a drift region of the device-forming region, the drift region being in contact with the insulating region, is formed of a semiconductor layer having the same conduction type as that of a channel formed through application of an electric potential to the gate electrode. The gate electrode is a trench gate. An outer peripheral portion of the emitter electrode or source electrode extends in a width of 20 μm or more over the top surface of the insulating region. The insulating region includes, in its interior, a dielectric region having a relative dielectric constant lower than that of the insulating region.
摘要翻译：一种具有基板的半导体器件; 形成在所述基板的上表面侧的发射电极或源电极; 形成在所述基板的上表面侧的栅电极; 以及形成在基板的底面侧的集电极电极或漏电极。该器件包括形成为围绕设置在衬底的顶表面侧上的器件形成区域的绝缘区域; 并且与绝缘区域接触的器件形成区域的漂移区域由与通过向栅电极施加电位形成的沟道相同的导电类型的半导体层形成。栅电极是沟槽栅极。发射电极或源电极的外周部分在绝缘区域的上表面上延伸20μm以上的宽度。绝缘区域在其内部包括具有低于绝缘区域的相对介电常数的介电区域。

2. 发明申请

US20070221950A1 Semiconductor device and a method for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070221950A1
公开(公告)日：2007-09-27
申请号：US11717790
申请日：2007-03-14
申请人： Takashi Suzuki , Sachiko Tanaka , Masayasu Ishiko , Jun Saito , Tsuyoshi Nishiwaki , Yukihiro Hisanaga , Hidehiro Nakagawa , Hirokazu Saito
发明人： Takashi Suzuki , Sachiko Tanaka , Masayasu Ishiko , Jun Saito , Tsuyoshi Nishiwaki , Yukihiro Hisanaga , Hidehiro Nakagawa , Hirokazu Saito
IPC分类号： H01L29/74
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0661 , H01L29/402 , H01L29/41741 , H01L29/66136 , H01L29/7397 , H01L29/7813 , H01L29/861 , H01L29/868
摘要： A semiconductor device having a substrate; an emitter electrode or source electrode formed on the top surface side of the substrate; a gate electrode formed on the top surface side of the substrate; and a collector electrode or drain electrode formed on the bottom surface side of the substrate. The device includes an insulating region formed so as to surround a device-forming region provided on the top surface side of the substrate; and a drift region of the device-forming region, the drift region being in contact with the insulating region, is formed of a semiconductor layer having the same conduction type as that of a channel formed through application of an electric potential to the gate electrode. The gate electrode is a trench gate. An outer peripheral portion of the emitter electrode or source electrode extends in a width of 20 μm or more over the top surface of the insulating region. The insulating region includes, in its interior, a dielectric region having a relative dielectric constant lower than that of the insulating region.
摘要翻译：一种具有基板的半导体器件; 形成在所述基板的上表面侧的发射电极或源电极; 形成在所述基板的上表面侧的栅电极; 以及形成在基板的底面侧的集电极电极或漏电极。该器件包括形成为围绕设置在衬底的顶表面侧上的器件形成区域的绝缘区域; 并且与绝缘区域接触的器件形成区域的漂移区域由与通过向栅电极施加电位形成的沟道相同的导电类型的半导体层形成。栅电极是沟槽栅极。发射电极或源电极的外周部分在绝缘区域的上表面上延伸20μm以上的宽度。绝缘区域在其内部包括具有低于绝缘区域的相对介电常数的介电区域。

3. 发明授权

US06803500B1 Genes encoding proteins regulating the pH of vacuoles 失效
标题翻译：编码调节空泡pH值的蛋白质的基因
公开(公告)号：US06803500B1
公开(公告)日：2004-10-12
申请号：US09830123
申请日：2001-04-24
申请人： Shigeru Iida , Sachiko Tanaka , Yoshishige Inagaki
发明人： Shigeru Iida , Sachiko Tanaka , Yoshishige Inagaki
IPC分类号： C12N1529
CPC分类号： C12N15/8243 , C07K14/415 , C12N15/825
摘要： There is provided a gene encoding a protein that has an activity of regulating the pH of vacuoles, for example a gene derived from morning glory encoding a protein that has the amino acid sequence as set forth in SEQ ID NO: 2. By introducing this gene into a plant, the flower color can be regulated via the control of the pH of vacuoles.
摘要翻译：提供编码具有调节空泡pH的活性的蛋白质的基因，例如编码具有SEQ ID NO：2所示的氨基酸序列的蛋白质的来自牵牛花的基因。通过引入该基因进入植物，可以通过控制空泡pH调节花色。

4. 发明授权

US5882701A Poultry egg with improved flavor and method of producing 失效
标题翻译：禽蛋具有改善的风味和生产方法
公开(公告)号：US5882701A
公开(公告)日：1999-03-16
申请号：US701498
申请日：1996-08-01
申请人： Yukihiro Motozono , Shuging Li , Noboru Ishihara , Nobuyuki Arai , Ryozo Nakahara , Yoshihiro Kochi , Sachiko Tanaka , Akiko Kami
发明人： Yukihiro Motozono , Shuging Li , Noboru Ishihara , Nobuyuki Arai , Ryozo Nakahara , Yoshihiro Kochi , Sachiko Tanaka , Akiko Kami
IPC分类号： A23K1/16 , A23K1/18 , A23L1/32 , A23K1/24
CPC分类号： A23K50/75 , A23K20/10 , A23L15/00 , Y10S426/807
摘要： In a method for producing eggs with improved flavor, hen poultry are fed a feed containing nutmeg and/or cinnamon. Eggs obtained from the poultry and foods produced from the eggs have an improved taste.
摘要翻译：在生产具有改善风味的鸡蛋的方法中，喂养含有肉豆蔻和/或肉桂的饲料。从鸡肉获得的鸡蛋和鸡蛋产生的食物味道有所改善。

5. 发明授权

US07133656B2 Direct conversion receiver 有权
标题翻译：直接转换接收机
公开(公告)号：US07133656B2
公开(公告)日：2006-11-07
申请号：US10921523
申请日：2004-08-19
申请人： Sachiko Tanaka
发明人： Sachiko Tanaka
IPC分类号： H04B1/10
CPC分类号： H04B1/30 , H03D2200/0047 , H03D2200/009
摘要： A direct conversion receiver is disclosed wherein a received RF signal is mixed in a mixer with a local oscillation signal having a frequency the same as a desired central frequency, and is down-converted to a base band signal. The receiver comprises a divider for dividing the received RF signal; an adder provided at a received RF signal input side of the mixer; a phase shifter provided before the input of the mixer, for shifting a phase of the divided signal of the received RF signal; and a gain adjustable amplifier provided after the divider, and before or after the phase shifter, for amplifying the divided signal to supply the phase-shifted and amplified signal to the adder. Accordingly a DC offset due to the direct conversion can be removed and an adverse effect due to transient response when the DC offset changes can be prevented.
摘要翻译：公开了一种直接转换接收机，其中接收的RF信号在混频器中与具有与所需中心频率相同的频率的本地振荡信号混合，并被下变频为基带信号。接收机包括用于分割所接收的RF信号的分频器; 设置在混频器的接收RF信号输入侧的加法器; 设置在所述混频器输入之前的移相器，用于移位所接收的RF信号的分频信号的相位; 以及在分频器之后和移相器之前或之后提供的增益可调放大器，用于放大分频信号以将相移和放大的信号提供给加法器。因此，可以消除由于直接转换引起的DC偏移，并且可以防止当DC偏移改变时由于瞬态响应引起的不利影响。

6. 发明申请

US20050020230A1 Direct conversion receiver 有权
标题翻译：直接转换接收机
公开(公告)号：US20050020230A1
公开(公告)日：2005-01-27
申请号：US10921523
申请日：2004-08-19
申请人： Sachiko Tanaka
发明人： Sachiko Tanaka
IPC分类号： H03D3/00 , H04B1/30 , H04B1/06 , H04B1/16 , H04B1/26 , H04B7/00 , H04B15/00
CPC分类号： H04B1/30 , H03D2200/0047 , H03D2200/009
摘要： A direct conversion receiver is disclosed wherein a received RF signal is mixed in a mixer with a local oscillation signal having a frequency the same as a desired central frequency, and is down-converted to a base band signal. The receiver comprises a divider for dividing the received RF signal; an adder provided at a received RF signal input side of the mixer; a phase shifter provided before the input of the mixer, for shifting a phase of the divided signal of the received RF signal; and a gain adjustable amplifier provided after the divider, and before or after the phase shifter, for amplifying the divided signal to supply the phase-shifted and amplified signal to the adder. Accordingly a DC offset due to the direct conversion can be removed and an adverse effect due to transient response when the DC offset changes can be prevented.
摘要翻译：公开了一种直接转换接收机，其中接收的RF信号在混频器中与具有与所需中心频率相同的频率的本地振荡信号混合，并被下变频为基带信号。接收机包括用于分割所接收的RF信号的分频器; 设置在混频器的接收RF信号输入侧的加法器; 设置在所述混频器输入之前的移相器，用于移位所接收的RF信号的分频信号的相位; 以及在分频器之后和移相器之前或之后提供的增益可调放大器，用于放大分频信号以将相移和放大的信号提供给加法器。因此，可以消除由于直接转换引起的DC偏移，并且可以防止当DC偏移改变时由于瞬态响应引起的不利影响。

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