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    • 7. 发明授权
    • Low profile magnetic transducer assembly with negative pressure slider
    • 低压磁传感器组件带负压滑块
    • US5235484A
    • 1993-08-10
    • US666077
    • 1991-03-07
    • Takao Maruyama
    • Takao Maruyama
    • G11B21/21G11B5/60
    • G11B5/6005
    • In a magnetic transducer assembly for magnetic recording disks, a magnetic slider body has two laterally spaced apart longitudinal rails each having a floating surface and a groove formed between them. A thin-film magnetic core assembly is mounted on an end wall of each of the rails and a magnetic gap is formed on each floating surface. A suspension element has one end secured to the bottom surface of the groove for maintaining the slider assembly in a constant position with respect to the surface of the disk. Preferably, the longitudinal rails are bridged bya laterally extending block to create negative pressure between the rails by relative movement between the assembly and the surface of the disk, and the suspension element exerts pressure in a direction away from the surface of the disk.
    • 在用于磁记录盘的磁换能器组件中,磁性滑块体具有两个横向间隔开的纵向轨道,每个纵向轨道具有浮动表面和在它们之间形成的凹槽。 薄膜磁芯组件安装在每个轨道的端壁上,并且在每个浮动表面上形成磁隙。 悬挂元件的一端固定到凹槽的底表面,用于将滑块组件相对于盘的表面保持在恒定位置。 优选地,纵向轨道由横向延伸的块桥接,以通过组件和盘表面之间的相对运动在轨道之间产生负压,并且悬挂元件沿远离盘表面的方向施加压力。
    • 8. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08304856B2
    • 2012-11-06
    • US12880764
    • 2010-09-13
    • Keiji MitaYasuhiro TamadaMasao TakahashiTakao Maruyama
    • Keiji MitaYasuhiro TamadaMasao TakahashiTakao Maruyama
    • H01L27/02
    • H01L29/8611H01L27/0814
    • A serially-connected diode pair made of diodes having a high withstand voltage and a low on-resistance is formed based on a high withstand voltage vertical PNP bipolar transistor process technology. Two of the diode pairs are connected in parallel to form a bridge so that there is formed a high-efficiency full-wave rectifier circuit that is free from a leakage current due to a parasitic transistor. The serially-connected diode pair is formed by connecting a diode composed of a P type semiconductor substrate, that makes an anode, and an N type buried layer, that makes a cathode, and a diode composed of a P+ type conductive layer, that makes an anode, and an N type epitaxial layer, that makes a cathode, in series with an electrode AC1. An N+ type buried layer and an N+ type conductive layer are formed to prevent an electric potential at the N+ type buried layer from becoming lower than an electric potential at a P+ type buried layer even when a large positive voltage is applied to the electrode AC1, so as to prevent a parasitic PNP transistor composed of the P+ type buried layer, the N+ type buried layer and the P type semiconductor substrate, that make an emitter, a base and a collector, respectively, from turning on.
    • 基于高耐压垂直PNP双极晶体管工艺技术,形成具有高耐受电压和低导通电阻的二极管串联二极管对。 两个二极管对并联连接形成桥,从而形成一个高效全波整流电路,该电路由于寄生晶体管而没有漏电流。 串联连接的二极管对通过连接由构成阳极的P型半导体衬底和形成阴极的N型掩埋层构成的二极管和由P +型导电层构成的二极管来形成, 阳极和N型外延层,其形成与电极AC1串联的阴极。 形成N +型掩埋层和N +型导电层,以防止N +型掩埋层的电位变得低于P +型掩埋层的电位,即使对电极AC1施加大的正电压, 以防止分别形成发射极,基极和集电极的由P +型掩埋层,N +型掩埋层和P型半导体基板构成的寄生PNP晶体管导通。