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    • 3. 发明授权
    • Method of forming a functional film
    • 形成功能膜的方法
    • US5587260A
    • 1996-12-24
    • US304950
    • 1994-09-13
    • Susumu MiyazakiTsuyoshi NakanoNobuya NiizakiJunichi YasukawaMiki Matsumura
    • Susumu MiyazakiTsuyoshi NakanoNobuya NiizakiJunichi YasukawaMiki Matsumura
    • G02B5/20G02F1/1335G03F7/00G03F9/00
    • G03F7/00G02F1/133512
    • There is provided a method of forming a micro-patterned functional film with a high precision on a substrate comprising:(a) a step of forming a positive or negative-type photoresist film on the entire surface of a substrate having a conductive layer thereon;(b) an exposure step of irradiating light to the surface of the already formed positive or negative-type photoresist film through overlapped photo-masks having patterns that makes the film cover the substrate except for the predetermined part for forming a functional film in the next developing step;(c) a developing step of removing the photoresist film of the predetermined part for forming a functional film;(d) a step of forming a functional film on the substrate in the part where said photoresist film is removed, by electrodeposition with said conductive layer as one electrode; and(e) a step of removing the positive or negative-type photoresist film remaining after the step (c).Especially a functional film having such lattice-like or stripe-like micro-patterns as being less than about 200 .mu.m in shortest spatial width can be formed.
    • 提供了一种在衬底上高精度地形成微图形化功能膜的方法,包括:(a)在其上具有导电层的衬底的整个表面上形成正或负型光致抗蚀剂膜的步骤; (b)曝光步骤,通过具有图案的重叠光掩模将光照射到已经形成的正型或负型光致抗蚀剂膜的表面上,所述图案使膜覆盖除了用于形成下一个功能膜的预定部分之外的基板 发展步伐 (c)去除用于形成功能膜的预定部分的光致抗蚀剂膜的显影步骤; (d)通过将所述导电层作为一个电极进行电沉积,在除去所述光致抗蚀剂膜的部分的基板上形成功能膜的步骤; 和(e)除去在步骤(c)之后残留的正型或负型光致抗蚀剂膜的步骤。 特别地,可以形成具有在最短空间宽度上小于约200μm的格状或条状微图案的功能膜。