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    • 8. 发明申请
    • Solid-state image pickup device
    • 固态图像拾取装置
    • US20060042677A1
    • 2006-03-02
    • US11206851
    • 2005-08-19
    • Toshiaki FukunagaDaisuke Yokoyama
    • Toshiaki FukunagaDaisuke Yokoyama
    • H02N6/00
    • H01L31/101H01L27/14623H01L27/14647H01L31/02164
    • The present invention provides a solid state image pickup device, including a silicon substrate and a photoelectric conversion unit which receives external incident light and generates signals in accordance therewith, and which is formed on or above the surface of the silicon substrate, wherein a signal transmission circuit for reading out the signals generated in the photoelectric conversion unit is formed on the silicon substrate; the photoelectric conversion unit includes a photoelectric conversion layer which has a laminated structure of plural compound semiconductor layers, which are different from each other in light wavelength to absorb and are provided with the laminated structure so that the shorter a light absorption wavelength of a compound semiconductor layer is, the closer to a light incident side the compound semiconductor layer resides; and the plural compound semiconductor layers are respectively connected to pixel electrodes formed on the signal transmission circuit.
    • 本发明提供了一种固态摄像装置,其包括硅衬底和光电转换单元,其接收外部入射光并根据其产生信号,并形成在硅衬底的表面上或上方,其中信号传输 在硅衬底上形成用于读出在光电转换单元中产生的信号的电路; 光电转换单元包括具有多个化合物半导体层的叠层结构的光电转换层,它们在光波长上彼此不同以吸收并且具有层叠结构,使得化合物半导体的光吸收波长越短 层越靠近化合物半导体层所在的光入射侧; 并且多个化合物半导体层分别连接到形成在信号传输电路上的像素电极。