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1. 发明申请

US20120247949A1 FILM FORMING METHOD, RESPUTTERING METHOD, AND FILM FORMING APPARATUS 审中-公开
标题翻译：薄膜成型方法，调色方法和薄膜成型装置
公开(公告)号：US20120247949A1
公开(公告)日：2012-10-04
申请号：US13433527
申请日：2012-03-29
申请人： Takashi SAKUMA , Tadahiro Ishizaka , Tatsuo Hatano , Shiro Hayashi , Toshiaki Fujisato , Hiroyuki Yokohara , Hiroyuki Toshima
发明人： Takashi SAKUMA , Tadahiro Ishizaka , Tatsuo Hatano , Shiro Hayashi , Toshiaki Fujisato , Hiroyuki Yokohara , Hiroyuki Toshima
IPC分类号： C23C14/34
CPC分类号： H01L21/2855 , C23C14/046 , C23C14/185 , C23C14/345 , C23C14/5833 , C23C14/5873 , C23C14/5893 , C23C16/509 , H01L21/76843 , H01L21/76865 , H01L21/76873
摘要： A film forming method includes depositing a metal thin film on a target substrate by generating an inductively coupled plasma in a processing chamber while introducing a plasma generating gas in the processing chamber with the substrate disposed on a placing table, by supplying DC power to a metal target from a DC power source, and by applying high-frequency bias to the placing table. A resputtering method includes resputtering the deposited metal thin film by stopping the generating of the inductively coupled plasma, by stopping the power supply from the DC power source, and by applying the high-frequency bias to the placing table while introducing the plasma generating gas in the processing chamber to form a capacitively coupled plasma in the processing chamber and by attracting ions of the plasma generating gas to the target substrate where the metal thin film is deposited.
摘要翻译：一种成膜方法，包括通过在处理室中产生电感耦合等离子体，同时在处理室中引入等离子体产生气体，其中衬底设置在放置台上，通过向金属提供DC电力，在目标衬底上沉积金属薄膜来自直流电源的目标，以及通过对放置台应用高频偏压。再溅射方法包括：通过停止来自直流电源的电力供给，通过停止产生电感耦合等离子体，并将高频偏压施加到放置台，同时将等离子体产生气体引入到所述处理室在所述处理室中形成电容耦合的等离子体，并且通过将所述等离子体产生气体的离子吸附到沉积金属薄膜的目标衬底上。

2. 发明申请

US20120196052A1 METHOD OF FORMING COPPER WIRING AND METHOD AND SYSTEM FOR FORMING COPPER FILM 有权
标题翻译：形成铜线的方法和形成铜膜的方法和系统
公开(公告)号：US20120196052A1
公开(公告)日：2012-08-02
申请号：US13359138
申请日：2012-01-26
申请人： Tadahiro ISHIZAKA , Atsushi GOMI , Takara KATO , Osamu YOKOYAMA , Takashi SAKUMA , Chiaki YASUMURO , Hiroyuki TOSHIMA , Tatsuo HATANO , Yasushi MIZUSAWA , Masamichi HARA , Kenzi SUZUKI
发明人： Tadahiro ISHIZAKA , Atsushi GOMI , Takara KATO , Osamu YOKOYAMA , Takashi SAKUMA , Chiaki YASUMURO , Hiroyuki TOSHIMA , Tatsuo HATANO , Yasushi MIZUSAWA , Masamichi HARA , Kenzi SUZUKI
IPC分类号： B05D5/12 , B05C11/00 , B05D3/02 , C23C16/00 , H05H1/24 , B05D7/22
CPC分类号： H01L21/02104 , C23C14/025 , C23C14/046 , C23C14/345 , C23C14/541 , C23C14/5806 , C23C16/16 , H01J37/32899 , H01J37/34
摘要： A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.
摘要翻译：提供了一种在衬底中形成的沟槽或孔中形成Cu布线的方法。该方法包括在沟槽或孔的表面上形成阻挡膜，在阻挡膜上形成Ru膜，并且通过在使衬底退火的同时在PVD膜上形成Cu膜而将Cu嵌入沟槽或孔中，使得发生铜进入沟槽或孔的迁移。

3. 发明申请

US20120196437A1 METHODS OF FORMING COPPER WIRING AND COPPER FILM, AND FILM FORMING SYSTEM 有权
标题翻译：形成铜线和铜箔的方法和薄膜成型系统
公开(公告)号：US20120196437A1
公开(公告)日：2012-08-02
申请号：US13081172
申请日：2011-04-06
申请人： Tadahiro ISHIZAKA , Atsushi GOMI , Takara KATO , Osamu YOKOYAMA , Takashi SAKUMA , Chiaki YASUMURO , Hiroyuki TOSHIMA , Tatsuo HATANO , Yasushi MIZUSAWA , Masamichi HARA
发明人： Tadahiro ISHIZAKA , Atsushi GOMI , Takara KATO , Osamu YOKOYAMA , Takashi SAKUMA , Chiaki YASUMURO , Hiroyuki TOSHIMA , Tatsuo HATANO , Yasushi MIZUSAWA , Masamichi HARA
IPC分类号： H01L21/768 , C23C16/52 , C23C16/50 , C23C16/46
CPC分类号： C23C16/16 , C23C14/024 , C23C14/025 , C23C14/046 , C23C14/165 , C23C14/345 , C23C14/568 , C23C14/5873 , C23C16/0272 , C23C16/045 , C23C16/54 , C23C16/56 , C23C28/023 , H01L21/2855 , H01L21/28556 , H01L21/76846 , H01L21/76882 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding copper in the trench or hole by forming a Cu film on the Ru film using PVD while heating the substrate such that migration of copper into the trench or hole occurs.
摘要翻译：提供了一种在衬底中形成的沟槽或孔中形成Cu布线的方法。该方法包括在沟槽或孔的表面上形成阻挡膜，在阻挡膜上形成Ru膜，并通过在加热衬底的同时在PVD膜上形成Cu膜，将铜包埋在沟槽或孔中，使得发生铜进入沟槽或孔的迁移。

4. 发明申请

US20090315116A1 SEMICONDUCTOR DEVICE WITH HETERO JUNCTION 有权
标题翻译：具有异位结的半导体器件
公开(公告)号：US20090315116A1
公开(公告)日：2009-12-24
申请号：US12404547
申请日：2009-03-16
申请人： Takashi SAKUMA
发明人： Takashi SAKUMA
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7848 , H01L21/28518 , H01L21/823412 , H01L21/823425 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/6653 , H01L29/6659 , H01L29/66636 , H01L29/7834
摘要： A semiconductor device includes: a semiconductor substrate made of first semiconductor having a first lattice constant; an isolation region formed in the semiconductor substrate and defining active regions; a gate electrode structure formed above each of the active regions; dummy gate electrode structures disposed above a substrate surface and covering borders between one of the active regions on both sides of the gate electrode structure and the isolation region; recesses formed by etching the active regions between the gate electrode structure and dummy gate electrode structures; and semiconductor layers epitaxially grown on the recesses and made of second semiconductor having a second lattice constant different from the first lattice constant.
摘要翻译：半导体器件包括：由具有第一晶格常数的第一半导体制成的半导体衬底; 形成在所述半导体衬底中并限定有源区的隔离区; 在每个有源区上形成的栅电极结构; 伪栅极电极结构，设置在衬底表面上方并覆盖栅电极结构两侧的有源区之一和隔离区之间的边界; 通过蚀刻栅电极结构和虚拟栅电极结构之间的有源区形成的凹陷; 以及在所述凹部上外延生长并由具有不同于所述第一晶格常数的第二晶格常数的第二半导体制成的半导体层。

5. 发明申请

US20110229752A1 BATTERY SEPARATOR AND SECONDARY BATTERY 审中-公开
标题翻译：电池分离器和二次电池
公开(公告)号：US20110229752A1
公开(公告)日：2011-09-22
申请号：US13050115
申请日：2011-03-17
申请人： Takashi SAKUMA , Masahiko Ueta , Kohei Nishizaka , Masatoshi Sashika , Yasuhisa Yamasaki
发明人： Takashi SAKUMA , Masahiko Ueta , Kohei Nishizaka , Masatoshi Sashika , Yasuhisa Yamasaki
IPC分类号： H01M2/16 , B05D5/12
CPC分类号： H01M2/145 , H01M2/14 , H01M2/162 , H01M2/1653 , H01M2/1666 , H01M10/34
摘要： A polyethylene resin surface is formed on a surface of a nonwoven fabric, which is made of polypropylene resin as a main component material and structured with bonded pieces of the polypropylene resin. The polyethylene resin surface is then subjected to a hydrophilization treatment, such as a radical reaction treatment or a sulfonation treatment. As a result, a secondary battery separator having a high mechanical strength along with a high hydrophilic nature, and a secondary battery using that secondary battery separator are provided.
摘要翻译：在由聚丙烯树脂作为主要成分材料制成并由聚丙烯树脂的粘合片构成的无纺织物的表面上形成聚乙烯树脂表面。然后对聚乙烯树脂表面进行亲水处理，例如自由基反应处理或磺化处理。结果，提供了具有高机械强度和高亲水性的二次电池隔膜和使用该二次电池隔板的二次电池。

6. 发明申请

US20080211031A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080211031A1
公开(公告)日：2008-09-04
申请号：US12040426
申请日：2008-02-29
申请人： Takashi SAKUMA
发明人： Takashi SAKUMA
IPC分类号： H01L21/314 , H01L21/8236
CPC分类号： H01L21/823412 , H01L21/3145
摘要： A device isolation film is formed in a semiconductor substrate at a border portion between a first region and a second region for defining a first active region in the first region and a second active region in the second region. A gate insulating film and a gate electrode is formed over the semiconductor substrate in the first region. A first photoresist film covering the second region and having an opening exposing the first active region and having an edge on the border portion of the opening positioned nearer the second active region than a middle of the device isolation film is formed over the semiconductor substrate with the gate electrode. Impurity ions are implanted from a direction tilted from a normal direction of the semiconductor substrate with the first photoresist film and the gate electrode as a mask to form pocket regions in the semiconductor substrate on both sides of the gate electrodes.
摘要翻译：器件隔离膜形成在第一区域和第二区域之间的边界部分的半导体衬底中，用于限定第一区域中的第一有源区和第二区域中的第二有源区。在第一区域中的半导体衬底上形成栅极绝缘膜和栅电极。第一光致抗蚀剂膜覆盖第二区域并且具有暴露第一有源区并且在位于第二有源区的位于第二有源区的边界的边界部分上的边缘的开口形成在半导体衬底的上方，栅电极。从第一光致抗蚀剂膜和栅极电极作为掩模从从半导体衬底的法线方向倾斜的方向注入杂质离子，以在栅极两侧的半导体衬底中形成袋区。

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