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1. 发明授权

US4527356A Cam grinding machine 失效
标题翻译：凸轮磨床
公开(公告)号：US4527356A
公开(公告)日：1985-07-09
申请号：US517036
申请日：1983-07-25
申请人： Takashi Ozone , Shohei Hayakawa , Fusao Nakajima , Keiichi Yamada , Kazuo Araki
发明人： Takashi Ozone , Shohei Hayakawa , Fusao Nakajima , Keiichi Yamada , Kazuo Araki
IPC分类号： B24B19/12 , B24B17/02
CPC分类号： B24B19/12 , Y10T409/301904 , Y10T409/3028
摘要： A cam grinding machine which includes a machine frame, a turning grinding wheel adjacent the frame, a swingable table positioned opposite to the frame, and a turnable work shaft for holding a workpiece mounted on the table. The table is controlled in the swing movement by a touch roller device mounted on the table and a master cam device mounted on the frame. The touch roller device is disposed to face and contact the master cam device so that the workpiece may be ground in correspondence to the master cam device by the grinding wheel provided on the forward side of forward and rearward swing direction of the table. The master cam device includes a driving shaft which is turned synchronously with the turning of the work shaft and is adjustable in its turning phase in relation to the work shaft.
摘要翻译：一种凸轮磨床，包括机架，与框架相邻的转动砂轮，与框架相对设置的摆动台，以及用于保持安装在工作台上的工件的可转动工作轴。通过安装在桌子上的触摸滚筒装置和安装在框架上的主凸轮装置来控制桌子的摆动运动。接触辊装置设置成面对并接触主凸轮装置，使得工件可以通过设置在工作台的向前和向后摆动方向的前侧上的砂轮相对于主凸轮装置而被磨削。主凸轮装置包括与工作轴的转动同步地转动的驱动轴，并且可相对于工作轴在其转动阶段中调节。

2. 再颁专利

USRE35036E Method of making symmetrically controlled implanted regions using rotational angle of the substrate 失效
公开(公告)号：USRE35036E
公开(公告)日：1995-09-12
申请号：US4652
申请日：1993-01-14
申请人： Toshiki Yabu , Michihiro Inoue , Takashi Ozone
发明人： Toshiki Yabu , Michihiro Inoue , Takashi Ozone
IPC分类号： H01L21/265 , H01L21/336 , H01L29/08 , H01L29/10 , H01L29/78
CPC分类号： H01L29/66575 , H01L21/26586 , H01L29/0847 , H01L29/1083 , H01L29/6659 , H01L29/78 , H01L29/7838
摘要： A method of fabricating a field effect transistor, wherein impurity diffusion layers of source and drain are formed by an ion implantation method using the gate electrode as the mask by inclining the semiconductor substrate with respect to the ion beam incident direction so as to prevent the channeling effect and also rotating it in planarity with respect to the ion beam scanning plane. As a result, impurity diffusion layers can be formed symmetrically with respect to the gate electrode.

3. 发明授权

US4771012A Method of making symmetrically controlled implanted regions using rotational angle of the substrate 失效
标题翻译：使用旋转角的对称控制植入区域的方法
公开(公告)号：US4771012A
公开(公告)日：1988-09-13
申请号：US61264
申请日：1987-06-12
申请人： Toshiki Yabu , Michihiro Inoue , Takashi Ozone
发明人： Toshiki Yabu , Michihiro Inoue , Takashi Ozone
IPC分类号： H01L21/265 , H01L21/336 , H01L29/08 , H01L29/10 , H01L29/78
CPC分类号： H01L29/66575 , H01L21/26586 , H01L29/0847 , H01L29/1083 , H01L29/6659 , H01L29/78 , H01L29/7838
摘要： A method of fabricating a field effect transistor, wherein impurity diffusion layers of source and drain are formed by an ion implantation method using the gate electrode as the mask by inclining the semiconductor substrate with respect to the ion beam incident direction so as to prevent the channeling effect and also rotating it in planarity with respect to the ion beam scanning plane. As a result, impurity diffusion layers can be formed symmetrically with respect to the gate electrode.
摘要翻译：一种制造场效应晶体管的方法，其中通过使用栅电极作为掩模的离子注入方法，通过使半导体衬底相对于离子束入射方向倾斜来形成源极和漏极的杂质扩散层，从而防止沟道并且还使其相对于离子束扫描平面的平面旋转。结果，可以相对于栅电极对称地形成杂质扩散层。

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