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    • 1. 发明申请
    • Focused ion beam apparatus
    • 聚焦离子束装置
    • US20110215256A1
    • 2011-09-08
    • US12931987
    • 2011-02-15
    • Takashi OgawaKenichi NishinakaYasuhiko Sugiyama
    • Takashi OgawaKenichi NishinakaYasuhiko Sugiyama
    • H01J3/14H01J3/26
    • H01J3/14H01J3/26
    • A focused ion beam apparatus includes an ion gun unit having an emitter tip, a gas supply unit including an ion source gas nozzle configured to supply gas to the tip and an ion source gas supply source. An extracting electrode ionizes the gas adsorbed onto the surface of the tip and extracts ions by applying a voltage between the extracting electrode and the tip. A cathode electrode accelerates the ions toward a sample, and a gun alignment electrode positioned on the side of the sample with respect to the ion gun unit and adjusts the direction of irradiation of the ion beam ejected from the ion gun unit. A lens system includes a focusing lens electrode and an objective lens electrode to focus the ion beam onto the sample.
    • 聚焦离子束装置包括具有发射极尖端的离子枪单元,气体供给单元,其包括被配置为向尖端供应气体的离子源气体喷嘴和离子源气体供给源。 提取电极通过在提取电极和尖端之间施加电压使吸附在尖端表面上的气体电离并提取离子。 阴极电极将离子朝向样品加速,并且枪对准电极相对于离子枪单元位于样品侧,并调节从离子枪单元喷射的离子束的照射方向。 透镜系统包括聚焦透镜电极和用于将离子束聚焦到样品上的物镜电极。
    • 7. 发明授权
    • Photomask correction method using composite charged particle beam, and device used in the correction method
    • 使用复合带电粒子束的光掩模校正方法,以及在校正方法中使用的装置
    • US07172839B2
    • 2007-02-06
    • US10721522
    • 2003-11-24
    • Yasuhiko SugiyamaJunichi TashiroAnto Yasaka
    • Yasuhiko SugiyamaJunichi TashiroAnto Yasaka
    • G03F9/00C03C15/00G01L21/30
    • G03F1/74
    • The object of the present invention is to provide a method for solving the problem of surface damage due to gallium ion irradiation that poses a problem when carrying out mask repair using currently established FIB techniques, and the problem of residual gallium, and to provide a device realizing this method. The device of the present invention has an electron beam lens barrel that can carry out processing, as well as an FIB lens barrel, provided inside the same sample chamber, which means that a mask repair method of the present invention, in correction processing to remove redundant sections such as a mask opaque defect, phase shift film bump defect or a glass substrate cut remnant defect, comprises a step of coarse correction by etching using a focused ion beam and a step of finishing processing using an electron beam, to remove surface damage due to gallium irradiation, and residual gallium.
    • 本发明的目的是提供一种解决由于镓离子照射引起的表面损伤的问题的方法,当使用当前建立的FIB技术进行掩模修复时存在问题,并且存在残留镓的问题,并提供一种装置 实现这个方法。 本发明的装置具有能够进行处理的电子束透镜镜筒以及设置在同一样品室内的FIB镜筒,这意味着本发明的掩模修复方法在校正处理中去除 冗余部分如掩模不透明缺陷,相移膜凸起缺陷或玻璃衬底切割残余缺陷包括通过使用聚焦离子束的蚀刻进行粗略校正的步骤和使用电子束进行精加工的步骤以去除表面损伤 由于镓照射和残留的镓。
    • 9. 发明授权
    • Method and apparatus for adjusting a charged particle beam of a beam optical system
    • 用于调整光束光学系统的带电粒子束的方法和装置
    • US06437330B1
    • 2002-08-20
    • US09360338
    • 1999-07-26
    • Yasuhiko Sugiyama
    • Yasuhiko Sugiyama
    • H01J3726
    • H01J37/28H01J37/21H01J2237/216
    • A method and apparatus for obtaining an observational image of a sample surface by scanning a charged particle beam to detect secondary charged particles given off from the sample surface. Charged particle beam focusing and astigmatism correction are performed by comparing scanning images: one image obtained from an initial adjusting value, and other images obtained from a ±&Dgr; of the initial adjusting value, wherein &Dgr; is a known predetermined selected value. The clearest image of the images is selected, and the adjusting value of the clearest image is then set as the new initial adjusting value. The entire scanning, comparison, and adjusting process is repeated until an optimal satisfactory image is obtained.
    • 一种用于通过扫描带电粒子束来获得样品表面的观察图像以检测从样品表面排出的二次带电粒子的方法和装置。 通过比较扫描图像来执行带电粒子束聚焦和像散校正:从初始调整值获得的一个图像和从初始调整值的±DELTA获得的其他图像,其中DELTA是已知的预定选择值。 选择图像的最清晰的图像,然后将最清晰的图像的调整值设置为新的初始调整值。 重复整个扫描,比较和调整过程,直到获得最佳令人满意的图像。