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1. 发明授权

US08133566B2 Information recording medium, its manufacturing method, and sputtering target 失效
标题翻译：信息记录介质，其制造方法和溅射靶
公开(公告)号：US08133566B2
公开(公告)日：2012-03-13
申请号：US12376507
申请日：2007-06-05
申请人： Takashi Nishihara , Rie Kojima , Noboru Yamada , Toshiyuki Matsunaga
发明人： Takashi Nishihara , Rie Kojima , Noboru Yamada , Toshiyuki Matsunaga
IPC分类号： B32B3/02
CPC分类号： G11B7/243 , G11B7/24038 , G11B7/2433 , G11B7/2531 , G11B7/2533 , G11B7/259 , G11B7/266 , G11B2007/24304 , G11B2007/24312 , G11B2007/24314 , G11B2007/24328 , Y10T428/21
摘要： An information recording medium is provided that has high recording sensitivity and high erasability, even when a recording layer thereof is as thin as about 3 nm. An information recording medium 15 on which information can be recorded by applying light or electrical energy has at least a recording layer 104 that undergoes phase change, while the recording layer 104 contains at least one element selected from among Zn, Si and C, and Sb in total proportion of 85 atomic % or more and has a composition preferably represented by the formula Sb100-a1M1a1 (atomic %) (wherein M1 represents at least one element selected from among Zn, Si and C, and a1 is a proportion in terms of atomic % that satisfies a relationship of 0
摘要翻译：提供了具有高记录灵敏度和高可擦除性的信息记录介质，即使其记录层薄到约3nm。通过施加光或电能可以记录信息的信息记录介质15至少具有经历相变的记录层104，而记录层104包含从Zn，Si和C中选出的至少一种元素，Sb 总原子量为85原子％以上，具有式Sb100-a1M1a1（原子％）优选的组成（其中，M1表示选自Zn，Si，C中的至少一种元素，a1相对于原子％满足0

2. 发明申请

US20100047504A1 INFORMATION RECORDING MEDIUM, ITS MANUFACTURING METHOD, AND SPUTTERING TARGET 失效
标题翻译：信息记录介质，其制造方法和溅射目标
公开(公告)号：US20100047504A1
公开(公告)日：2010-02-25
申请号：US12376507
申请日：2007-06-05
申请人： Takashi Nishihara , Rie Kojima , Noboru Yamada , Toshiyuki Matsunaga
发明人： Takashi Nishihara , Rie Kojima , Noboru Yamada , Toshiyuki Matsunaga
IPC分类号： B32B3/02 , C23C14/34
CPC分类号： G11B7/243 , G11B7/24038 , G11B7/2433 , G11B7/2531 , G11B7/2533 , G11B7/259 , G11B7/266 , G11B2007/24304 , G11B2007/24312 , G11B2007/24314 , G11B2007/24328 , Y10T428/21
摘要： An information recording medium is provided that has high recording sensitivity and high erasability, even when a recording layer thereof is as thin as about 3 nm. An information recording medium 15 on which information can be recorded by applying light or electrical energy has at least a recording layer 104 that undergoes phase change, while the recording layer 104 contains at least one element selected from among Zn, Si and C, and Sb in total proportion of 85 atomic % or more and has composition preferably represented by the formula Sb100-a1M1a (atomic %) (wherein M1 represents at least one element selected from among Zn, Si and C, and al is a proportion in term of atomic % that satisfies a relationship of 0
摘要翻译：提供了具有高记录灵敏度和高可擦除性的信息记录介质，即使其记录层薄到约3nm。通过施加光或电能可以记录信息的信息记录介质15至少具有经历相变的记录层104，而记录层104含有选自Zn，Si和C中的至少一种元素，Sb 总成分为85原子％以上，组成优选以式Sb100-a1M1a（原子％）表示（其中M1表示选自Zn，Si和C中的至少一种元素，a1为原子比例％满足0

3. 发明申请

US20050119123A1 Information recording medium and method for manufacturing the same 审中-公开
公开(公告)号：US20050119123A1
公开(公告)日：2005-06-02
申请号：US11030038
申请日：2005-01-04
申请人： Noboru Yamada , Rie Kojima , Toshiyuki Matsunaga , Katsumi Kawahara
发明人： Noboru Yamada , Rie Kojima , Toshiyuki Matsunaga , Katsumi Kawahara
IPC分类号： G11B7/2433 , G03G5/02 , G11B7/26 , G11B9/00 , G11B9/04 , G11B9/08 , G11B11/00 , G11B11/08 , G11B11/12 , G11B13/00 , G11C16/02 , H01L45/00 , B41M5/20
CPC分类号： G11B13/00 , G03G5/02 , G11B7/243 , G11B7/2433 , G11B7/2585 , G11B7/26 , G11B7/266 , G11B9/00 , G11B9/04 , G11B9/08 , G11B11/00 , G11B11/08 , G11B11/12 , G11B2007/24306 , G11B2007/24308 , G11B2007/2431 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/24322 , G11B2007/2571 , G11B2007/25713 , G11C13/0004 , G11C13/04 , G11C2029/0403 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , H01L45/1683 , Y10T428/21
摘要： An information recording medium having such a recording material layer on a substrate where reversible phase change between electrically or optically detectable states can be caused by electric energy or electromagnetic energy. The recording material forming the recording layer is either a material having a crystal structure including lattice defects in one phase of the reversible phase change or a material having a complex phase composed of a crystal portion including a lattice defect in one phase of the reversible phase change and an amorphous portion. Both portions contain a common element. A part of the lattice defects are filled with an element other than the element constituting the crystal structure. The recording medium having a recording thin film exhibits little variation of the recording and reproduction characteristics even after repetition of recording and reproduction, excellent weatherability, strong resistance against composition variation, and easily controllable characteristics.

4. 发明授权

US06858277B1 Information recording medium and method for manufacturing the same 有权
公开(公告)号：US06858277B1
公开(公告)日：2005-02-22
申请号：US09936601
申请日：2000-03-10
申请人： Noboru Yamada , Rie Kojima , Toshiyuki Matsunaga , Katsumi Kawahara
发明人： Noboru Yamada , Rie Kojima , Toshiyuki Matsunaga , Katsumi Kawahara
IPC分类号： G11B7/2433 , G03G5/02 , G11B7/26 , G11B9/00 , G11B9/04 , G11B9/08 , G11B11/00 , G11B11/08 , G11B11/12 , G11B13/00 , G11C16/02 , H01L45/00 , B32B3/02 , G11B7/24
CPC分类号： G11B13/00 , G03G5/02 , G11B7/243 , G11B7/2433 , G11B7/2585 , G11B7/26 , G11B7/266 , G11B9/00 , G11B9/04 , G11B9/08 , G11B11/00 , G11B11/08 , G11B11/12 , G11B2007/24306 , G11B2007/24308 , G11B2007/2431 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/24322 , G11B2007/2571 , G11B2007/25713 , G11C13/0004 , G11C13/04 , G11C2029/0403 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , H01L45/1683 , Y10T428/21
摘要： An information recording medium having such a recording material layer on a substrate where reversible phase change between electrically or optically detectable states can be caused by electric energy or electromagnetic energy. The recording material forming the recording layer is either a material having a crystal structure including lattice defects in one phase of the reversible phase change or a material having a complex phase composed of a crystal portion including a lattice defect in one phase of the reversible phase change and an amorphous portion. Both portions contain a common element. A part of the lattice defects are filled with an element other than the element constituting the crystal structure. The recording medium having a recording thin film exhibits little variation of the recording and reproduction characteristics even after repetition of recording and reproduction, excellent weatherability, strong resistance against composition variation, and easily controllable characteristics.

5. 发明申请

US20050058941A1 Information recording medium and method for manufacturing the same 审中-公开
标题翻译：信息记录介质及其制造方法
公开(公告)号：US20050058941A1
公开(公告)日：2005-03-17
申请号：US10948832
申请日：2004-09-22
申请人： Noboru Yamada , Rie Kojima , Toshiyuki Matsunaga , Katsumi Kawahara
发明人： Noboru Yamada , Rie Kojima , Toshiyuki Matsunaga , Katsumi Kawahara
IPC分类号： G11B7/2433 , G03G5/02 , G11B7/26 , G11B9/00 , G11B9/04 , G11B9/08 , G11B11/00 , G11B11/08 , G11B11/12 , G11B13/00 , G11C16/02 , H01L45/00 , G11B7/24
CPC分类号： G11B13/00 , G03G5/02 , G11B7/243 , G11B7/2433 , G11B7/2585 , G11B7/26 , G11B7/266 , G11B9/00 , G11B9/04 , G11B9/08 , G11B11/00 , G11B11/08 , G11B11/12 , G11B2007/24306 , G11B2007/24308 , G11B2007/2431 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/24322 , G11B2007/2571 , G11B2007/25713 , G11C13/0004 , G11C13/04 , G11C2029/0403 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , H01L45/1683 , Y10T428/21
摘要： An information recording medium having such a recording material layer on a substrate where reversible phase change between electrically or optically detectable states can be caused by electric energy or electromagnetic energy. The recording material forming the recording layer is either a material having a crystal structure including lattice defects in one phase of the reversible phase change or a material having a complex phase composed of a crystal portion including a lattice defect in one phase of the reversible phase change and an amorphous portion. Both portions contain a common element. A part of the lattice defects are filled with an element other than the element constituting the crystal structure. The recording medium having a recording thin film exhibits little variation of the recording and reproduction characteristics even after repetition of recording and reproduction, excellent weatherability, strong resistance against composition variation, and easily controllable characteristics.
摘要翻译：在基板上具有这样的记录材料层的信息记录介质，其可以由电能或电磁能引起电或光可检测状态之间的可逆相位变化。形成记录层的记录材料是具有在可逆相变的一相中包括晶格缺陷的晶体结构的材料或具有由可逆相变的一相中包括晶格缺陷的晶体部分组成的复相的材料和无定形部分。两个部分都包含一个共同的元素。晶格缺陷的一部分用构成晶体结构的元素以外的元素填充。具有记录薄膜的记录介质即使在重复记录和再现之后也表现出很小的记录和再现特性的变化，优异的耐候性，对组合物变化的强抗性以及容易控制的特性。

6. 发明授权

US07288877B2 Piezoelectric film device, and driving method of the same 有权
标题翻译：压电薄膜器件及其驱动方法
公开(公告)号：US07288877B2
公开(公告)日：2007-10-30
申请号：US11013994
申请日：2004-12-16
申请人： Hiroyuki Kita , Hirokazu Uchiyama , Toshiyuki Matsunaga , Fumiyo Tojo
发明人： Hiroyuki Kita , Hirokazu Uchiyama , Toshiyuki Matsunaga , Fumiyo Tojo
IPC分类号： H01L41/04 , H01L41/08
CPC分类号： H01L41/0933 , B25J7/00 , B25J15/12 , G02B6/3512 , G02B6/352 , G02B6/3578 , G02B6/359 , G02B26/0825 , G02B26/0858 , H01L41/094 , H01L41/0986
摘要： A piezoelectric film device has a piezoelectric film element and a power supply circuit. The piezoelectric film element is formed of a first electrode, a second electrode, and a piezoelectric film that is sandwiched between the first electrode and second electrode and has a polarization vector in the film thickness direction. The polarization vector is inverted by application of a predetermined voltage or higher through the first electrode and second electrode. The power supply circuit supplies voltage for inverting the polarization vector. The piezoelectric film has each different lattice constant depending on the direction of the polarization vector. The piezoelectric film device keeps a different displacement position corresponding to the direction of the polarization vector even when the voltage application is stopped.
摘要翻译：压电薄膜器件具有压电薄膜元件和电源电路。压电膜元件由夹在第一电极和第二电极之间并具有膜厚度方向的偏振矢量的第一电极，第二电极和压电膜形成。通过施加通过第一电极和第二电极的预定电压而使极化矢量反转。电源电路提供用于反转偏振矢量的电压。压电膜根据极化矢量的方向具有不同的晶格常数。即使在施加电压停止时，压电膜装置保持与极化矢量的方向对应的不同位移位置。

7. 发明授权

US08539203B2 Multi-thread processor selecting threads on different schedule pattern for interrupt processing and normal operation 有权
标题翻译：多线程处理器在不同的调度模式下选择线程进行中断处理和正常运行
公开(公告)号：US08539203B2
公开(公告)日：2013-09-17
申请号：US12585737
申请日：2009-09-23
申请人： Koji Adachi , Toshiyuki Matsunaga
发明人： Koji Adachi , Toshiyuki Matsunaga
IPC分类号： G06F9/46
CPC分类号： G06F9/3851 , G06F9/3836 , G06F9/3867 , G06F9/4893 , Y02D10/24
摘要： In an exemplary aspect, the present invention provides a multi-thread processor including a plurality of hardware threads each of which generates an independent instruction flow, a thread scheduler that outputs a thread selection signal in accordance with a first or second schedule, the thread selection signal designating a hardware thread to be executed in a next execution cycle among the plurality of hardware threads, a first selector that selects one of the plurality of hardware threads according to the thread selection signal and outputs an instruction generated by the selected hardware thread, and an execution pipeline that executes an instruction output from the first selector, wherein when the multi-thread processor is in a first state, the thread scheduler selects the first schedule, and when the multi-thread processor is in a second state, the thread scheduler selects the second schedule.
摘要翻译：在一个示例性方面，本发明提供一种多线程处理器，包括多个硬件线程，每个硬件线程生成独立的指令流，线程调度器，其根据第一或第二调度输出线程选择信号，线程选择指定要在所述多个硬件线程中的下一个执行周期中执行的硬件线程;第一选择器，其根据所述线程选择信号选择所述多个硬件线程中的一个，并输出由所选择的硬件线程生成的指令;以及执行从第一选择器输出的指令的执行管线，其中当所述多线程处理器处于第一状态时，所述线程调度器选择所述第一调度，并且当所述多线程处理器处于第二状态时，所述线程调度器选择第二个时间表。

8. 发明申请

US20100082944A1 Multi-thread processor 有权
标题翻译：多线程处理器
公开(公告)号：US20100082944A1
公开(公告)日：2010-04-01
申请号：US12585737
申请日：2009-09-23
申请人： Koji Adachi , Toshiyuki Matsunaga
发明人： Koji Adachi , Toshiyuki Matsunaga
IPC分类号： G06F9/38
CPC分类号： G06F9/3851 , G06F9/3836 , G06F9/3867 , G06F9/4893 , Y02D10/24
摘要： In an exemplary aspect, the present invention provides a multi-thread processor including a plurality of hardware threads each of which generates an independent instruction flow, a thread scheduler that outputs a thread selection signal in accordance with a first or second schedule, the thread selection signal designating a hardware thread to be executed in a next execution cycle among the plurality of hardware threads, a first selector that selects one of the plurality of hardware threads according to the thread selection signal and outputs an instruction generated by the selected hardware thread, and an execution pipeline that executes an instruction output from the first selector, wherein when the multi-thread processor is in a first state, the thread scheduler selects the first schedule, and when the multi-thread processor is in a second state, the thread scheduler selects the second schedule.
摘要翻译：在一个示例性方面，本发明提供一种多线程处理器，包括多个硬件线程，每个硬件线程生成独立的指令流，线程调度器，其根据第一或第二调度输出线程选择信号，线程选择指定要在所述多个硬件线程中的下一个执行周期中执行的硬件线程;第一选择器，其根据所述线程选择信号选择所述多个硬件线程中的一个，并输出由所选择的硬件线程生成的指令;以及执行从第一选择器输出的指令的执行管线，其中当所述多线程处理器处于第一状态时，所述线程调度器选择所述第一调度，并且当所述多线程处理器处于第二状态时，所述线程调度器选择第二个时间表。

9. 发明授权

US07048360B2 Piezoelectric body, manufacturing method thereof, piezoelectric element having the piezoelectric body, inject head, and inject type recording device 有权
标题翻译：压电体及其制造方法，具有压电体，注射头和注射型记录装置的压电元件
公开(公告)号：US07048360B2
公开(公告)日：2006-05-23
申请号：US10478567
申请日：2003-02-19
申请人： Isaku Kanno , Toshiyuki Matsunaga , Takeshi Kamada , Shintaro Hara
发明人： Isaku Kanno , Toshiyuki Matsunaga , Takeshi Kamada , Shintaro Hara
IPC分类号： B41J2/45 , H01L41/08 , C04B35/00
CPC分类号： C23C14/088 , B41J2/161 , B41J2/1628 , B41J2/1631 , B41J2/1645 , B41J2/1646 , C01G21/00 , C01G25/006 , C01P2002/34 , C01P2006/40 , C04B35/491 , C04B2235/3213 , C04B2235/3227 , C04B2235/3296 , C04B2235/768 , C04B2235/787 , C04B2235/79 , H01L41/0973 , H01L41/187
摘要： In a piezoelectric element comprising a first electrode 2 provided on a substrate 1, a piezoelectric material 3 provided on the first electrode 2 and a second electrode 4 provided on the piezoelectric material 3, the piezoelectric material 3 is configured so as to have a perovskite type crystal structure which is represented by a formula ABO3 and in which the main component for the A site is Pb and the main components for the B site are Zr, Ti and Pb, and configured so that a ratio of Pb atoms to all atoms in the B site is more than 3% and not more than 30%. Namely, the piezoelectric material 3 is formed so as to contain Pb excessively and the excess Pb atoms are activated to be Pb4+ during formation of the piezoelectric material 3 and then introduced into the B site.
摘要翻译：在包括设置在基板1上的第一电极2，设置在第一电极2上的压电材料3和设置在压电材料3上的第二电极4的压电元件中，压电材料3被构造成具有钙钛矿型由式ABO 3 3表示的晶体结构，其中A位的主成分为Pb，B位的主要成分为Zr，Ti，Pb，构成为的Pb原子对B位点中的所有原子大于3％且不超过30％。即，压电材料3形成为在形成压电材料3期间过量地含有Pb并且过量的Pb原子被激活为Pb 4+，然后引入B位点。

10. 发明授权

US07902844B2 Voltage drop measurement circuit 失效
标题翻译：电压降测量电路
公开(公告)号：US07902844B2
公开(公告)日：2011-03-08
申请号：US11759375
申请日：2007-06-07
申请人： Toshiyuki Matsunaga
发明人： Toshiyuki Matsunaga
IPC分类号： G01R27/08
CPC分类号： G01R31/31721 , G01R19/16528 , G01R19/16552 , G01R31/3004 , G01R31/31701
摘要： A voltage drop measurement circuit includes a voltage drop circuit to generate an output voltage and fluctuate the output voltage according to a fluctuation in a power supply voltage, where the output voltage being the power supply voltage dropped by a predetermined amount and a flip-flop to retain a flag indicating a drop in the power supply voltage according to the output voltage.
摘要翻译：电压降测量电路包括：电压降电路，用于产生输出电压，并根据电源电压的波动波动输出电压，其中电源电压的输出电压下降预定量，触发器变为保持指示根据输出电压降低电源电压的标志。

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